公开(公告)号：US20180145048A1

公开(公告)日：2018-05-24

申请号：US15875335

申请日：2018-01-19

申请人： EV GROUP E. THALLNER GMBH

发明人： Markus WIMPLINGER

IPC分类号： H01L23/00 ,  B81C3/00

CPC分类号： H01L24/83 ,  B81C3/001 ,  B81C2203/036 ,  H01L24/29 ,  H01L24/32 ,  H01L2224/29082 ,  H01L2224/291 ,  H01L2224/29105 ,  H01L2224/29111 ,  H01L2224/29116 ,  H01L2224/29117 ,  H01L2224/29118 ,  H01L2224/29123 ,  H01L2224/29124 ,  H01L2224/29139 ,  H01L2224/29144 ,  H01L2224/29147 ,  H01L2224/29155 ,  H01L2224/29157 ,  H01L2224/2916 ,  H01L2224/29166 ,  H01L2224/29169 ,  H01L2224/29171 ,  H01L2224/29184 ,  H01L2224/32145 ,  H01L2224/32507 ,  H01L2224/8302 ,  H01L2224/83022 ,  H01L2224/8381 ,  H01L2224/83894 ,  H01L2924/01003 ,  H01L2924/01005 ,  H01L2924/01011 ,  H01L2924/01012 ,  H01L2924/01019 ,  H01L2924/0102 ,  H01L2924/01034 ,  H01L2924/01037 ,  H01L2924/01038 ,  H01L2924/0105 ,  H01L2924/01052 ,  H01L2924/01055 ,  H01L2924/01056 ,  H01L2924/01322 ,  H01L2924/10251 ,  H01L2924/10252 ,  H01L2924/10253 ,  H01L2924/1026 ,  H01L2924/10271 ,  H01L2924/10272 ,  H01L2924/10323 ,  H01L2924/10328 ,  H01L2924/10329 ,  H01L2924/1033 ,  H01L2924/10331 ,  H01L2924/10332 ,  H01L2924/10333 ,  H01L2924/10334 ,  H01L2924/10335 ,  H01L2924/10336 ,  H01L2924/10346 ,  H01L2924/1037 ,  H01L2924/10371 ,  H01L2924/10372 ,  H01L2924/10373 ,  H01L2924/10375 ,  H01L2924/10376 ,  H01L2924/10377 ,  H01L2924/10821 ,  H01L2924/10823 ,  H01L2924/10831 ,  H01L2924/00 ,  H01L2924/00014 ,  H01L2924/01032 ,  H01L2924/01013 ,  H01L2924/01031 ,  H01L2924/0103

摘要： A method for applying a bonding layer that is comprised of a basic layer and a protective layer on a substrate with the following method steps: application of an oxidizable basic material as a basic layer on a bonding side of the substrate, at least partial covering of the basic layer with a protective material that is at least partially dissolvable in the basic material as a protective layer. In addition, the invention relates to a corresponding substrate.

公开(公告)号：US09911713B2

公开(公告)日：2018-03-06

申请号：US15441741

申请日：2017-02-24

申请人： EV GROUP E. THALLNER GMBH

发明人： Markus Wimplinger

IPC分类号： H01L23/00 ,  B81C3/00

CPC分类号： H01L24/83 ,  B81C3/001 ,  B81C2203/036 ,  H01L24/29 ,  H01L24/32 ,  H01L2224/29082 ,  H01L2224/291 ,  H01L2224/29105 ,  H01L2224/29111 ,  H01L2224/29116 ,  H01L2224/29117 ,  H01L2224/29118 ,  H01L2224/29123 ,  H01L2224/29124 ,  H01L2224/29139 ,  H01L2224/29144 ,  H01L2224/29147 ,  H01L2224/29155 ,  H01L2224/29157 ,  H01L2224/2916 ,  H01L2224/29166 ,  H01L2224/29169 ,  H01L2224/29171 ,  H01L2224/29184 ,  H01L2224/32145 ,  H01L2224/32507 ,  H01L2224/8302 ,  H01L2224/83022 ,  H01L2224/8381 ,  H01L2224/83894 ,  H01L2924/01003 ,  H01L2924/01005 ,  H01L2924/01011 ,  H01L2924/01012 ,  H01L2924/01019 ,  H01L2924/0102 ,  H01L2924/01034 ,  H01L2924/01037 ,  H01L2924/01038 ,  H01L2924/0105 ,  H01L2924/01052 ,  H01L2924/01055 ,  H01L2924/01056 ,  H01L2924/01322 ,  H01L2924/10251 ,  H01L2924/10252 ,  H01L2924/10253 ,  H01L2924/1026 ,  H01L2924/10271 ,  H01L2924/10272 ,  H01L2924/10323 ,  H01L2924/10328 ,  H01L2924/10329 ,  H01L2924/1033 ,  H01L2924/10331 ,  H01L2924/10332 ,  H01L2924/10333 ,  H01L2924/10334 ,  H01L2924/10335 ,  H01L2924/10336 ,  H01L2924/10346 ,  H01L2924/1037 ,  H01L2924/10371 ,  H01L2924/10372 ,  H01L2924/10373 ,  H01L2924/10375 ,  H01L2924/10376 ,  H01L2924/10377 ,  H01L2924/10821 ,  H01L2924/10823 ,  H01L2924/10831 ,  H01L2924/00 ,  H01L2924/00014 ,  H01L2924/01032 ,  H01L2924/01013 ,  H01L2924/01031 ,  H01L2924/0103

摘要： A method for applying a bonding layer that is comprised of a basic layer and a protective layer on a substrate with the following method steps: application of an oxidizable basic material as a basic layer on a bonding side of the substrate, at least partial covering of the basic layer with a protective material that is at least partially dissolvable in the basic material as a protective layer. In addition, the invention relates to a corresponding substrate.

公开(公告)号：US09768360B2

公开(公告)日：2017-09-19

申请号：US15265487

申请日：2016-09-14

申请人： OSRAM Opto Semiconductors GmbH

发明人： Michael Fehrer ,  Alfred Lell ,  Martin Müller ,  Tilman Schlenker ,  Sönke Tautz ,  Uwe Strauβ

IPC分类号： H01L33/44 ,  H01L23/00 ,  H01L33/00 ,  H01L31/02 ,  H01L31/0203 ,  H01L31/0216 ,  H01L31/18 ,  H01L33/56 ,  H01L33/62 ,  H01S5/02 ,  H01S5/20 ,  H01S5/028

CPC分类号： H01L33/44 ,  H01L24/24 ,  H01L24/48 ,  H01L24/82 ,  H01L31/02019 ,  H01L31/0203 ,  H01L31/02161 ,  H01L31/186 ,  H01L33/0095 ,  H01L33/56 ,  H01L33/62 ,  H01L2224/24145 ,  H01L2224/24226 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/484 ,  H01L2224/8592 ,  H01L2924/00014 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01012 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/0102 ,  H01L2924/01023 ,  H01L2924/01031 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/01038 ,  H01L2924/0104 ,  H01L2924/01058 ,  H01L2924/01068 ,  H01L2924/01072 ,  H01L2924/01073 ,  H01L2924/01078 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/10329 ,  H01L2924/10336 ,  H01L2924/12036 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/12043 ,  H01L2924/181 ,  H01L2924/3025 ,  H01L2933/0025 ,  H01L2933/005 ,  H01S5/02 ,  H01S5/028 ,  H01S5/20 ,  H01S2301/176 ,  H01L2924/00 ,  H01L2224/45099 ,  H01L2924/00012 ,  H01L2224/85399 ,  H01L2224/05599

摘要： An optoelectronic component includes at least one inorganic optoelectronically active semiconductor component having an active region that emits or receives light during operation, and a sealing material directly applied by atomic layer deposition, wherein the semiconductor component is applied on a carrier, the carrier includes electrical connection layers, the semiconductor component electrically connects to one of the electrical connection layers via an electrical contact element, and the sealing material completely covers in a hermetically impermeable manner and directly contacts all exposed surfaces including sidewall and bottom surfaces of the semiconductor component and the electrical contact element and all exposed surfaces of the carrier apart from an electrical connection region of the carrier.

公开(公告)号：US20170229423A1

公开(公告)日：2017-08-10

申请号：US15499011

申请日：2017-04-27

申请人： EV GROUP E. THALLNER GmbH

发明人： Thomas Plach ,  Kurt Hingerl ,  Markus Wimplinger ,  Christoph Flotgen

IPC分类号： H01L23/00

CPC分类号： H01L24/83 ,  H01L21/0223 ,  H01L21/02255 ,  H01L21/187 ,  H01L21/2007 ,  H01L21/3105 ,  H01L21/76251 ,  H01L24/27 ,  H01L24/29 ,  H01L24/32 ,  H01L2224/27444 ,  H01L2224/278 ,  H01L2224/29188 ,  H01L2224/32145 ,  H01L2224/8309 ,  H01L2224/83896 ,  H01L2924/01013 ,  H01L2924/10252 ,  H01L2924/1032 ,  H01L2924/10328 ,  H01L2924/10329 ,  H01L2924/1033 ,  H01L2924/10331 ,  H01L2924/10332 ,  H01L2924/10333 ,  H01L2924/10334 ,  H01L2924/10335 ,  H01L2924/10336 ,  H01L2924/10346 ,  H01L2924/1082 ,  H01L2924/10821 ,  H01L2924/10823 ,  H01L2924/20106

摘要： This invention relates to a method for bonding of a first contact surface of a first substrate to a second contact surface of a second substrate with the following steps, especially the following sequence: forming a first reservoir in a surface layer on the first contact surface and a second reservoir in a surface layer on the second contact surface, the surface layers of the first and second contact surfaces being comprised of respective native oxide materials of one or more second educts respectively contained in reaction layers of the first and second substrates, partially filling the first and second reservoirs with one or more first educts; and reacting the first educts filled in the first reservoir with the second educts contained in the reaction layer of the second substrate to at least partially strengthen a permanent bond formed between the first and second contact surfaces.

公开(公告)号：US20160181213A1

公开(公告)日：2016-06-23

申请号：US14577141

申请日：2014-12-19

申请人： TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

发明人： Yueh-Chuan LEE ,  Chia-Chan CHEN

IPC分类号： H01L23/00 ,  H01L21/78 ,  H01L21/306 ,  H01L23/58

CPC分类号： H01L24/06 ,  H01L21/30604 ,  H01L21/78 ,  H01L23/585 ,  H01L24/03 ,  H01L24/94 ,  H01L33/0095 ,  H01L2224/05016 ,  H01L2224/06179 ,  H01L2924/10252 ,  H01L2924/10253 ,  H01L2924/10271 ,  H01L2924/10329 ,  H01L2924/1033 ,  H01L2924/10331 ,  H01L2924/10335 ,  H01L2924/10336 ,  H01L2924/10338 ,  H01L2924/10342 ,  H01L2924/10346 ,  H01L2924/2064

摘要： The semiconductor die includes a base body, protruding portions and bonding pads. The base body has sidewalls. The protruding portions are laterally protruding from the sidewalls respectively. The bonding pads are disposed on the protruding portions respectively. The wafer dicing method includes following operations. Chips are formed on a semiconductor wafer. Bonding pads are formed on a border line between every two of the adjacent chips. A scribe line is formed and disposed along the bonding pads. A photolithographic pattern is formed on a top surface of the semiconductor wafer to expose the scribe line. The scribe line is etched to a depth in the semiconductor wafer substantially below the top surface layer to form an etched pattern. A back surface of the semiconductor wafer is thinned until the etched pattern in the wafer substrate is exposed.

摘要翻译： 半导体管芯包括基体，突出部分和接合焊盘。 基体具有侧壁。 突出部分分别从侧壁侧向突出。 接合焊盘分别设置在突出部分上。 晶片切割方法包括以下操作。 在半导体晶片上形成芯片。 接合焊盘形成在每两个相邻芯片之间的边界线上。 沿着焊盘形成并布置划线。 在半导体晶片的顶表面上形成光刻图案以暴露刻划线。 将划刻线蚀刻到基本上在顶表面层下方的半导体晶片的深度，以形成蚀刻图形。 半导体晶片的背面变薄，直到晶片衬底中的蚀刻图案露出。

公开(公告)号：US20140017877A1

公开(公告)日：2014-01-16

申请号：US14007999

申请日：2011-04-08

申请人： Thomas Plach ,  Kurt Hingerl ,  Markus Wimplinger ,  Christoph Flötgen

发明人： Thomas Plach ,  Kurt Hingerl ,  Markus Wimplinger ,  Christoph Flötgen

IPC分类号： H01L21/18

CPC分类号： H01L24/83 ,  H01L21/0223 ,  H01L21/02255 ,  H01L21/187 ,  H01L21/2007 ,  H01L21/3105 ,  H01L21/76251 ,  H01L24/27 ,  H01L24/29 ,  H01L24/32 ,  H01L2224/27444 ,  H01L2224/278 ,  H01L2224/29188 ,  H01L2224/32145 ,  H01L2224/8309 ,  H01L2224/83896 ,  H01L2924/01013 ,  H01L2924/10252 ,  H01L2924/1032 ,  H01L2924/10328 ,  H01L2924/10329 ,  H01L2924/1033 ,  H01L2924/10331 ,  H01L2924/10332 ,  H01L2924/10333 ,  H01L2924/10334 ,  H01L2924/10335 ,  H01L2924/10336 ,  H01L2924/10346 ,  H01L2924/1082 ,  H01L2924/10821 ,  H01L2924/10823 ,  H01L2924/20106

摘要： This invention relates to a method for bonding of a first contact surface of a first substrate to a second contact surface of a second substrate with the following steps, especially the following sequence: forming a reservoir in a surface layer on the first contact surface, the first surface layer consisting at least largely of a native oxide material, at least partial filling of the reservoir with a first educt or a first group of educts, the first contact surface making contact with the second contact surface for formation of a prebond connection, forming a permanent bond between the first and second contact surface, at least partially strengthened by the reaction of the first educt with a second educt contained in a reaction layer of the second substrate.

摘要翻译： 本发明涉及以下步骤将第一衬底的第一接触表面与第二衬底的第二接触表面接合的方法，特别是以下顺序：在第一接触表面上的表面层中形成储存器， 至少主要由天然氧化物材料组成的第一表面层，至少部分填充具有第一喷射或第一组离子的储存器，所述第一接触表面与第二接触表面接触以形成预结合连接，形成 所述第一和第二接触表面之间的永久性接合，至少部分地通过所述第一离子与所述第二基底的反应层中包含的第二离子的反应而被强化。

公开(公告)号：US20130193467A1

公开(公告)日：2013-08-01

申请号：US13711444

申请日：2012-12-11

申请人： Nichia Corporation

发明人： Takeshi KUSUSE ,  Takahiko Sakamoto

IPC分类号： H01L33/60

CPC分类号： H01L33/60 ,  H01L24/06 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L27/156 ,  H01L33/08 ,  H01L33/20 ,  H01L33/32 ,  H01L33/385 ,  H01L33/62 ,  H01L2224/04042 ,  H01L2224/0603 ,  H01L2224/32245 ,  H01L2224/45015 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/45169 ,  H01L2224/48091 ,  H01L2224/48139 ,  H01L2224/48247 ,  H01L2224/48257 ,  H01L2224/48465 ,  H01L2224/48472 ,  H01L2224/49113 ,  H01L2224/73265 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01012 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01019 ,  H01L2924/0102 ,  H01L2924/01021 ,  H01L2924/01023 ,  H01L2924/01027 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/01038 ,  H01L2924/0104 ,  H01L2924/01041 ,  H01L2924/01042 ,  H01L2924/01044 ,  H01L2924/01045 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/0105 ,  H01L2924/01051 ,  H01L2924/01056 ,  H01L2924/01057 ,  H01L2924/01058 ,  H01L2924/01059 ,  H01L2924/0106 ,  H01L2924/01063 ,  H01L2924/01065 ,  H01L2924/01066 ,  H01L2924/01067 ,  H01L2924/01068 ,  H01L2924/0107 ,  H01L2924/01072 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01076 ,  H01L2924/01077 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01322 ,  H01L2924/014 ,  H01L2924/09701 ,  H01L2924/10329 ,  H01L2924/10336 ,  H01L2924/12036 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/181 ,  H01L2924/3025 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/20751 ,  H01L2924/20752 ,  H01L2924/20753 ,  H01L2924/20754 ,  H01L2924/20755 ,  H01L2924/20756 ,  H01L2924/20757 ,  H01L2924/00012

摘要： A nitride semiconductor light-emitting device includes a layered portion emitting light on a substrate. The layered portion includes an n-type semiconductor layer, an active layer, and a p-type semiconductor layer. The periphery of the layered portion is inclined, and the surface of the n-type semiconductor layer is exposed at the periphery. An n electrode is disposed on the exposed surface of the n-type semiconductor layer. This device structure can enhance the emission efficiency and the light extraction efficiency.

摘要翻译： 氮化物半导体发光器件包括在衬底上发光的层状部分。 分层部分包括n型半导体层，有源层和p型半导体层。 层叠部的周边倾斜，并且n型半导体层的表面在周边露出。 n电极设置在n型半导体层的暴露表面上。 该器件结构可以提高发光效率和光提取效率。

公开(公告)号：US08330179B2

公开(公告)日：2012-12-11

申请号：US13271100

申请日：2011-10-11

申请人： Takeshi Kususe ,  Takahiko Sakamoto

发明人： Takeshi Kususe ,  Takahiko Sakamoto

IPC分类号： H01L33/60

CPC分类号： H01L33/60 ,  H01L24/06 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L27/156 ,  H01L33/08 ,  H01L33/20 ,  H01L33/32 ,  H01L33/385 ,  H01L33/62 ,  H01L2224/04042 ,  H01L2224/0603 ,  H01L2224/32245 ,  H01L2224/45015 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/45169 ,  H01L2224/48091 ,  H01L2224/48139 ,  H01L2224/48247 ,  H01L2224/48257 ,  H01L2224/48465 ,  H01L2224/48472 ,  H01L2224/49113 ,  H01L2224/73265 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01012 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01019 ,  H01L2924/0102 ,  H01L2924/01021 ,  H01L2924/01023 ,  H01L2924/01027 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/01038 ,  H01L2924/0104 ,  H01L2924/01041 ,  H01L2924/01042 ,  H01L2924/01044 ,  H01L2924/01045 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/0105 ,  H01L2924/01051 ,  H01L2924/01056 ,  H01L2924/01057 ,  H01L2924/01058 ,  H01L2924/01059 ,  H01L2924/0106 ,  H01L2924/01063 ,  H01L2924/01065 ,  H01L2924/01066 ,  H01L2924/01067 ,  H01L2924/01068 ,  H01L2924/0107 ,  H01L2924/01072 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01076 ,  H01L2924/01077 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01322 ,  H01L2924/014 ,  H01L2924/09701 ,  H01L2924/10329 ,  H01L2924/10336 ,  H01L2924/12036 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/181 ,  H01L2924/3025 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/20751 ,  H01L2924/20752 ,  H01L2924/20753 ,  H01L2924/20754 ,  H01L2924/20755 ,  H01L2924/20756 ,  H01L2924/20757 ,  H01L2924/00012

摘要： A nitride semiconductor light-emitting device includes a layered portion emitting light on a substrate. The layered portion includes an n-type semiconductor layer, an active layer, and a p-type semiconductor layer. The periphery of the layered portion is inclined, and the surface of the n-type semiconductor layer is exposed at the periphery. An n electrode is disposed on the exposed surface of the n-type semiconductor layer. This device structure can enhance the emission efficiency and the light extraction efficiency.

摘要翻译： 氮化物半导体发光器件包括在衬底上发光的层状部分。 分层部分包括n型半导体层，有源层和p型半导体层。 层叠部的周边倾斜，并且n型半导体层的表面在周边露出。 n电极设置在n型半导体层的暴露表面上。 该器件结构可以提高发光效率和光提取效率。

公开(公告)号：US20120273974A1

公开(公告)日：2012-11-01

申请号：US13494474

申请日：2012-06-12

申请人： Shigeki Katogi ,  Hiroyuki Izawa ,  Houko Sutou ,  Masami Yusa ,  Tohru Fujinawa

发明人： Shigeki Katogi ,  Hiroyuki Izawa ,  Houko Sutou ,  Masami Yusa ,  Tohru Fujinawa

IPC分类号： C09J175/14 ,  H05K1/11 ,  H01L23/535 ,  H01B1/12

CPC分类号： C08G18/672 ,  C08G18/3212 ,  C08G18/44 ,  C08G18/73 ,  C08L75/16 ,  C08L2666/20 ,  C09J133/066 ,  C09J133/14 ,  C09J175/16 ,  H01L24/29 ,  H01L24/83 ,  H01L2224/29101 ,  H01L2224/2919 ,  H01L2224/293 ,  H01L2224/29386 ,  H01L2224/294 ,  H01L2224/32225 ,  H01L2224/83101 ,  H01L2224/83851 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01012 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01019 ,  H01L2924/01023 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/01045 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/0105 ,  H01L2924/01067 ,  H01L2924/01077 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/0665 ,  H01L2924/07802 ,  H01L2924/0781 ,  H01L2924/07811 ,  H01L2924/09701 ,  H01L2924/10329 ,  H01L2924/10336 ,  H01L2924/10349 ,  H01L2924/15788 ,  H01L2924/19042 ,  H05K3/323 ,  H05K2201/0129 ,  C08G18/664 ,  C08G18/6674 ,  C08G18/6607 ,  C08G18/48 ,  H01L2924/00

摘要： The adhesive composition of the invention comprises a radical generator, a thermoplastic resin and a urethane (meth)acrylate having two or more radical-polymerizing groups in the molecule and a weight-average molecular weight of 3000-30,000.

摘要翻译： 本发明的粘合剂组合物包括自由基发生剂，热塑性树脂和分子中具有两个或更多个自由基聚合基团的聚氨酯（甲基）丙烯酸酯，重均分子量为3000-3000。

公开(公告)号：US20120261799A1

公开(公告)日：2012-10-18

申请号：US13538121

申请日：2012-06-29

申请人： Satoshi SASAKI ,  Yasunari UMEMOTO ,  Yasuo OSONE ,  Tsutomu KOBORI ,  Chushiro KUSANO ,  Isao OHBU ,  Kenji SASAKI

发明人： Satoshi SASAKI ,  Yasunari UMEMOTO ,  Yasuo OSONE ,  Tsutomu KOBORI ,  Chushiro KUSANO ,  Isao OHBU ,  Kenji SASAKI

IPC分类号： H01L27/04

CPC分类号： H01L29/7304 ,  H01L23/66 ,  H01L24/48 ,  H01L24/49 ,  H01L25/042 ,  H01L27/0605 ,  H01L27/067 ,  H01L28/40 ,  H01L29/0808 ,  H01L29/7371 ,  H01L2223/6627 ,  H01L2223/6644 ,  H01L2224/05553 ,  H01L2224/05554 ,  H01L2224/32225 ,  H01L2224/48091 ,  H01L2224/48095 ,  H01L2224/48137 ,  H01L2224/48227 ,  H01L2224/48235 ,  H01L2224/49113 ,  H01L2224/49171 ,  H01L2224/73265 ,  H01L2924/00014 ,  H01L2924/01002 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01007 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/0102 ,  H01L2924/01022 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01031 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/01037 ,  H01L2924/01041 ,  H01L2924/01042 ,  H01L2924/01049 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/10329 ,  H01L2924/10336 ,  H01L2924/1305 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/1423 ,  H01L2924/19032 ,  H01L2924/19041 ,  H01L2924/19042 ,  H01L2924/19043 ,  H01L2924/19105 ,  H01L2924/30105 ,  H01L2924/3011 ,  H01L2924/30111 ,  H01L2924/00 ,  H01L2224/45099

摘要： A technology which allows a reduction in the thermal resistance of a semiconductor device used in a radio communication device, and the miniaturization thereof is provided. For example, the semiconductor device can include a plurality of unit transistors Q, transistor formation regions 3a, 3b, and 3e each having a first number (e.g., seven) of the unit transistors Q, and transistor formation regions 3c and 3d each having a second number (e.g., four) of the unit transistors Q. The transistor formation regions 3c and 3d are located between the transistor formation regions 3a, 3b, 3e, and 3f, and the first number is larger than the second number.

摘要翻译： 提供了允许降低无线电通信装置中使用的半导体装置的热阻的技术及其小型化。 例如，半导体器件可以包括多个单位晶体管Q，具有单位晶体管Q的第一数量（例如7个）的晶体管形成区域3a，3b和3e以及每个具有单位晶体管Q的晶体管形成区域3c和3d 晶体管形成区域3c和3d位于晶体管形成区域3a，3b，3e和3f之间，第一数量大于第二数量。