公开(公告)号：US5741837A

公开(公告)日：1998-04-21

申请号：US825235

申请日：1997-03-27

申请人： Chung-Jen Wu ,  Chien-Ming Chen ,  Hsien-Ming Chen ,  Hurng-Rern Lee

发明人： Chung-Jen Wu ,  Chien-Ming Chen ,  Hsien-Ming Chen ,  Hurng-Rern Lee

IPC分类号： C08K5/00 ,  C08K5/03 ,  C08K5/3447 ,  C08K5/34

CPC分类号： C08K5/03 ,  C08K5/0083 ,  C08K5/3447

摘要： A syndiotactic polystyrene composition is improved which exhibits improved crystallization rate. The improved syndiotactic polystyrene composition contains (a) a syndiotactic polystyrene; and (b) a nucleating agent which is selected from the group consisting of two types of compounds represented by the following formulas, respectively: ##STR1## In Formulas I and II, the radicals R.sub.1 and R.sub.2, which can be the same of different, are C.sub.1 to C.sub.5 alkyl groups, X is a halogen group, preferably a bromide group, and n is an integer from 1 to 5. In the present invention, the nucleating agent is provided at 0.01 to 5 part, by weight, per 100 parts, also by weight, of the syndiotactic polystyrene resin. An example of Formula I compound is 2-hydroxybenimidiazole, and an example of the Formula II compound is bis(phenylbromide) methane.

摘要翻译： 改进了间同立构聚苯乙烯组合物，其表现出改善的结晶速率。 改进的间同立构聚苯乙烯组合物包含（a）间同立构聚苯乙烯; 和（b）选自由下式表示的两种类型的化合物的成核剂：在式I和II中，基团R 1和R 2可以相同， 是C1至C5烷基，X是卤素基团，优选溴化物基团，n是1至5的整数。在本发明中，成核剂以每100份0.01至5份重量 ，同样重量的间规聚苯乙烯树脂。 式I化合物的实例是2-羟基苯二胺，并且式II化合物的实例是双（苯基溴）甲烷。

公开(公告)号：US08736373B2

公开(公告)日：2014-05-27

申请号：US13435340

申请日：2012-03-30

申请人： Chien-Ming Chen ,  Yann-Hsiung Liang ,  Hui-Wen Miao ,  Ko-Yang Tso

发明人： Chien-Ming Chen ,  Yann-Hsiung Liang ,  Hui-Wen Miao ,  Ko-Yang Tso

IPC分类号： H03F3/45 ,  G06F3/038

CPC分类号： H03F3/45183 ,  G09G3/3674 ,  G09G2310/0291

摘要： An output buffer of a source driver is disclosed. The output buffer includes a buffer input, a buffer output, a differential input stage, a bias current source, an output stage, a compensation capacitor, and a comparator. The output stage and the comparator are both operated between an analog supply voltage (AVDD) and a ground voltage (AGND). The comparator compares an input voltage and an output voltage and outputs a control signal to the bias current source according to the compared result to control a bias current outputted by the bias current source to enhance the slew rate of the output buffer.

摘要翻译： 公开了一种源驱动器的输出缓冲器。 输出缓冲器包括缓冲器输入，缓冲器输出，差分输入级，偏置电流源，输出级，补偿电容和比较器。 输出级和比较器均在模拟电源电压（AVDD）和接地电压（AGND）之间运行。 比较器比较输入电压和输出电压，并根据比较结果向偏置电流源输出控制信号，以控制偏置电流源输出的偏置电流，以提高输出缓冲器的转换速率。

公开(公告)号：US20120249245A1

公开(公告)日：2012-10-04

申请号：US13435340

申请日：2012-03-30

申请人： Chien-Ming Chen ,  Yann-Hsiung Liang ,  Hui-Wen Miao ,  Ko-Yang Tso

发明人： Chien-Ming Chen ,  Yann-Hsiung Liang ,  Hui-Wen Miao ,  Ko-Yang Tso

IPC分类号： H03F3/45

CPC分类号： H03F3/45183 ,  G09G3/3674 ,  G09G2310/0291

摘要： An output buffer of a source driver is disclosed. The output buffer includes a buffer input, a buffer output, a differential input stage, a bias current source, an output stage, a compensation capacitor, and a comparator. The output stage and the comparator are both operated between an analog supply voltage (AVDD) and a ground voltage (AGND). The comparator compares an input voltage and an output voltage and outputs a control signal to the bias current source according to the compared result to control a bias current outputted by the bias current source to enhance the slew rate of the output buffer.

摘要翻译： 公开了一种源驱动器的输出缓冲器。 输出缓冲器包括缓冲器输入，缓冲器输出，差分输入级，偏置电流源，输出级，补偿电容和比较器。 输出级和比较器均在模拟电源电压（AVDD）和接地电压（AGND）之间运行。 比较器比较输入电压和输出电压，并根据比较结果向偏置电流源输出控制信号，以控制偏置电流源输出的偏置电流，以提高输出缓冲器的转换速率。

公开(公告)号：US08063492B2

公开(公告)日：2011-11-22

申请号：US12430608

申请日：2009-04-27

申请人： Ting-Feng Su ,  Chien-Ming Chen

发明人： Ting-Feng Su ,  Chien-Ming Chen

IPC分类号： H01L29/40

CPC分类号： H01L25/0657 ,  H01L23/49816 ,  H01L24/29 ,  H01L24/32 ,  H01L24/45 ,  H01L24/48 ,  H01L24/73 ,  H01L24/91 ,  H01L25/50 ,  H01L2224/05624 ,  H01L2224/05647 ,  H01L2224/29101 ,  H01L2224/2919 ,  H01L2224/32014 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/45144 ,  H01L2224/48095 ,  H01L2224/48227 ,  H01L2224/484 ,  H01L2224/48599 ,  H01L2224/4899 ,  H01L2224/73265 ,  H01L2224/83856 ,  H01L2224/85203 ,  H01L2224/85207 ,  H01L2224/92247 ,  H01L2225/0651 ,  H01L2225/06575 ,  H01L2225/06593 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/0665 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/00012

摘要： A multi-chip stacked package primarily comprises a chip carrier, a first chip disposed on the chip carrier, a plurality of die-attaching bars, a second chip stacked on the first chip by the adhesion of the die-attaching bars, and a plurality of bonding wires electrically connecting the first chip to the chip carrier. The die-attaching bars are formed on the first chip in a specific pattern and have an adhesive surface away from the first chip for adhering the second chip. The bonding wires have a loop height lower than the adhesive surface in a manner that specific sections of the bonding wires are embedded in the corresponding die-attaching bar from the adhesive surface. Accordingly, the die-attaching bars can modify and fasten the bonding wires in advance to avoid collapse and deformation of the bonding wires during stacking of the second chip and encapsulating processes.

摘要翻译： 多芯片堆叠封装主要包括芯片载体，设置在芯片载体上的第一芯片，多个芯片连接杆，通过模具附接杆的粘附堆叠在第一芯片上的第二芯片，以及多个芯片 的电线将第一芯片电连接到芯片载体上。 模具安装杆以特定图案形成在第一芯片上，并且具有远离第一芯片的粘合表面，用于粘附第二芯片。 接合线具有低于粘合剂表面的环高度，使得接合线的特定部分从粘合剂表面嵌入相应的模具附接杆中。 因此，模具安装杆可以预先修改并固定接合线，以避免在第二芯片堆叠和封装过程期间接合线的塌陷和变形。

公开(公告)号：US07935388B2

公开(公告)日：2011-05-03

申请号：US12494706

申请日：2009-06-30

申请人： Hsueh-Shih Chen ,  Dai-Luon Lo ,  Gwo-Yang Chang ,  Chien-Ming Chen

发明人： Hsueh-Shih Chen ,  Dai-Luon Lo ,  Gwo-Yang Chang ,  Chien-Ming Chen

IPC分类号： H01L21/00

CPC分类号： H01L29/0665 ,  B82Y10/00 ,  H01L29/0673 ,  H01L33/08

摘要： A method for manufacturing a quantum-dot element utilizes a reaction chamber for evaporating or sputtering at least one electrode layer or at least one buffer layer on a substrate. A substrate-supporting base is located inside the reaction chamber for fixing the substrate. An atomizer has a gas inlet and a sample inlet. More specifically, the gas inlet and the sample inlet feed the atomizer respectively with a gas and a precursor solution having a plurality of functionalized quantum dots, and thereby form a quantum-dot layer on the substrate. The method for manufacturing a quantum-dot element forms a quantum dot layer with uniformly distributed quantum dots and integrates the processes for forming the quantum-dot layer, the buffer layer, and the electrode layer together in the same chamber.

摘要翻译： 用于制造量子点元件的方法利用反应室来蒸发或溅射基板上的至少一个电极层或至少一个缓冲层。 基板支撑基座位于反应室内部，用于固定基板。 雾化器具有气体入口和样品入口。 更具体地，气体入口和样品入口分别向雾化器供给具有多个官能化量子点的气体和前体溶液，从而在衬底上形成量子点层。 量子点元件的制造方法形成了具有均匀分布的量子点的量子点层，并且将同时形成量子点层，缓冲层和电极层的工序集成在一起。

公开(公告)号：US07907888B2

公开(公告)日：2011-03-15

申请号：US12111229

申请日：2008-04-29

申请人： Hung-Min Sun ,  Shih-Pu Hsu ,  Chien-Ming Chen

发明人： Hung-Min Sun ,  Shih-Pu Hsu ,  Chien-Ming Chen

IPC分类号： H04K3/00

CPC分类号： H04K3/41 ,  H04K3/222 ,  H04K3/224 ,  H04K3/226 ,  H04K3/45 ,  H04K2203/18

摘要： The present invention relates to a mobile jamming attack method applied in a wireless sensor network (WSN) and method defending the same. The mobile jamming attack method is a power exhaustion denial-of-service attack, possesses mobility and self-learning capability and is unable to be defended with existing defending scheme due to its attack to the routing layer of the WSN; the mobile jamming defending method employs multi-topologies scheme to defend the mobile jamming attack so that the affected area is reduced, the base station can still receive reply packets under the attack, and the jammed area can be roughly located and the track of the mobile jammer can be traced.

摘要翻译： 本发明涉及应用于无线传感器网络（WSN）的移动干扰攻击方法及其保护方法。 移动干扰攻击方式是一种耗电拒绝服务攻击，具有移动性和自学习能力，由于对WSN的路由层的攻击，无法针对现有的防御方案进行辩护; 移动干扰防御方法采用多拓扑方案来捍卫移动干扰攻击，使受影响的区域减少，基站仍然可以在攻击的情况下接收应答分组，并且卡塞区域可以大致定位，移动台的轨道 可以追踪干扰。

公开(公告)号：US07303937B2

公开(公告)日：2007-12-04

申请号：US11187829

申请日：2005-07-25

申请人： Hsueh-Shih Chen ,  Dai-Luon Lo ,  Gwo-Yang Chang ,  Chien-Ming Chen

发明人： Hsueh-Shih Chen ,  Dai-Luon Lo ,  Gwo-Yang Chang ,  Chien-Ming Chen

IPC分类号： H01L21/00

CPC分类号： H01L29/0665 ,  B82Y10/00 ,  H01L29/0673 ,  H01L33/08

摘要： A method for manufacturing a quantum-dot element is disclosed. The method includes the following steps. First, a deposition chamber having at least one atomizer and a substrate-supporting base is provided. The atomizer is connected to a gas inlet and a sample inlet. Afterwards, a sample solution is prepared composed of a plurality of functionalized quantum dots dispersed in a solvent. Simultaneously, a substrate is placed on the substrate-supporting base in the deposition chamber. Finally, the sample solution and a gas are transferred into the atomizer through the sample inlet and the gas inlet respectively for generating quantum-dot droplets, which subsequently deposit on the substrate in the deposition chamber. The quantum-dot element manufactured by the present invention has a uniform distribution of quantum dots that have a small size and, therefore, the quality of the quantum-dot element can be substantially improved.

摘要翻译： 公开了一种制造量子点元件的方法。 该方法包括以下步骤。 首先，提供具有至少一个雾化器和基板支撑基底的沉积室。 雾化器连接到气体入口和样品入口。 然后，制备由分散在溶剂中的多个官能化量子点构成的样品溶液。 同时，将基板放置在沉积室中的基板支撑基底上。 最后，样品溶液和气体分别通过样品入口和气体入口转移到雾化器中，用于产生量子点液滴，其随后沉积在沉积室中的基底上。 由本发明制造的量子点元件具有尺寸小的量子点的均匀分布，因此量子点元件的质量可以显着提高。

公开(公告)号：US07256862B2

公开(公告)日：2007-08-14

申请号：US10711035

申请日：2004-08-19

申请人： Chien-Ming Chen ,  Kei-Hsiung Yang

发明人： Chien-Ming Chen ,  Kei-Hsiung Yang

IPC分类号： G02F1/13 ,  G02F1/1339 ,  G02F1/1341

CPC分类号： G02F1/1341 ,  G02F1/1309

摘要： A repairing method of a liquid crystal display panel having a gravity defect includes steps of removing the sealant outside the liquid crystal injection hole and providing a first pressure to the liquid crystal display panel. Next, a second pressure is continuously provided to the liquid crystal display panel, and the sealant in the liquid crystal injection hole is removed. Then, a third pressure is continuously provided to the liquid crystal display panel for pressing the liquid crystal out through the injection hole, and the flowed liquid crystal is cleaned out. After that, the liquid crystal injection hole is sealed with a fresh sealant and a fourth pressure is continuously provided to the liquid crystal display panel. Finally, the fresh sealant is cured and the fourth pressure is removed.

摘要翻译： 具有重力缺陷的液晶显示面板的修复方法包括在液晶注入孔外部去除密封剂并向液晶显示面板提供第一压力的步骤。 接下来，向液晶显示面板连续地设置第二压力，并且去除液晶注入孔中的密封剂。 然后，向液晶显示面板连续地提供第三压力，用于通过注入孔将液晶挤出，并且流出的液晶被清除。 之后，用新鲜的密封剂密封液晶注入孔，向液晶显示面板连续提供第四压力。 最后，将新鲜的密封剂固化并除去第四压力。

公开(公告)号：US06801484B2

公开(公告)日：2004-10-05

申请号：US09949748

申请日：2001-09-12

申请人： Ying-Tzung Wang ,  Chien-Ming Chen

发明人： Ying-Tzung Wang ,  Chien-Ming Chen

IPC分类号： G11B700

CPC分类号： G11B27/24 ,  G11B7/005 ,  G11B7/007 ,  G11B7/00718 ,  G11B2220/216 ,  G11B2220/2575

摘要： A method for generating header and transition flags using the DPD technology and an optical device using the same are disclosed. The method first sets a first and a second threshold levels. Then, the method generates a phase difference signal, i.e. starting a phase detection function to generate a phase difference signal. The method generates a first transition flag signal and a second transition flag signal, wherein the first transition flag signal is enable if the phase difference signal is greater than a first threshold level and the second transition flag signal is enable if the phase difference signal is smaller than the second threshold level. The method then generates a first header flag signal and a second header flag signal according to the transition flag signal. The first header flag signal is enable if the first transition flag signal becomes enable before the second transition flag does, and the second header flag signal is enable if the second transition flag signal becomes enable before the first transition flag does.

摘要翻译： 公开了一种使用DPD技术产生报头和转换标志的方法以及使用其的光学装置。 该方法首先设置第一和第二阈值水平。 然后，该方法产生相位差信号，即开始相位检测功能以产生相位差信号。 该方法产生第一转变标志信号和第二转变标志信号，其中如果相位差信号大于第一阈值电平，则第一转变标志信号被使能，并且如果相位差信号较小则第二转变标志信号被使能 比第二阈值水平高。 该方法然后根据转换标志信号产生第一标题标志信号和第二标题标志信号。 如果第一转变标志信号在第二转变标志执行之前变为使能，则第一标题标志信号被使能，并且如果第二转变标志信号在第一转换标志有效之前变为使能，则第二报头标志信号被使能。

公开(公告)号：US09123924B2

公开(公告)日：2015-09-01

申请号：US13596299

申请日：2012-08-28

申请人： Ming-Lung Chen ,  Chien-Ming Chen ,  Ching-Chou Yu ,  Sheng-Fu Wen

发明人： Ming-Lung Chen ,  Chien-Ming Chen ,  Ching-Chou Yu ,  Sheng-Fu Wen

IPC分类号： H01M4/64 ,  H01M4/04 ,  H01M10/04

CPC分类号： H01M4/0404 ,  H01M10/0431 ,  Y10T29/49208

摘要： A battery core and a method of manufacturing the same are disclosed herein. The battery core includes a first electrode plate and a second electrode plate. The first electrode plate includes a substrate and a first active material. A first portion of the first active material is formed on a first area of the substrate, and a second portion of the first active material is formed on a second area of the substrate. The second electrode plate includes first and second substrates disconnected from each other, and a second active material. The first and second substrates are positioned corresponding to the first and second first areas respectively. A first portion of the second active material is formed on the first substrate, and a second portion of the second active material is formed on the second substrate.

摘要翻译： 本文公开了电池芯及其制造方法。 电池芯包括第一电极板和第二电极板。 第一电极板包括基板和第一活性材料。 第一活性材料的第一部分形成在衬底的第一区域上，并且第一活性材料的第二部分形成在衬底的第二区域上。 第二电极板包括彼此分离的第一和第二基板和第二活性材料。 第一和第二基板分别对应于第一和第二区域定位。 第二活性物质的第一部分形成在第一衬底上，第二活性材料的第二部分形成在第二衬底上。