Germanium photodetector coupled to a waveguide

    公开(公告)号:US10914892B2

    公开(公告)日:2021-02-09

    申请号:US16164695

    申请日:2018-10-18

    Abstract: A photonic device can include an optical detector (e.g., a photodetector) coupled to silicon waveguides. Unlike silicon, germanium is an efficient detector at the wavelength of optical signals typically used for data communication. Instead of directly coupling the waveguide to the germanium, in one embodiment, the waveguide extends below the germanium but is spaced sufficiently away from the germanium so that the optical signal is not transferred. Instead, an optical transfer structure (e.g., a tapered waveguide or an optical grating) is disposed between the germanium and the waveguide. The waveguide first transfers the optical signal into the optical transfer structure which then transfers the optical signal into the germanium.

    Germanium photodetector with extended responsivity

    公开(公告)号:US11183603B2

    公开(公告)日:2021-11-23

    申请号:US16550054

    申请日:2019-08-23

    Abstract: Embodiments herein describe photonic systems that include a germanium photodetector thermally coupled to a resistive element. Current flowing through the resistive element increases the temperature of the resistive element. Heat from the resistive element increases the temperature of the thermally coupled photodetector. Increasing the temperature of the photodetector increases the responsivity of the photodetector. The bias voltage of the photodetector can be increased to increase the bandwidth of the photodetector. In various embodiments, the photodetector includes at least one waveguide to receive light into the photodetector. Other embodiments include multiple resistive elements thermally coupled to the photodetector.

    Germanium photodetector with extended responsivity

    公开(公告)号:US10446699B2

    公开(公告)日:2019-10-15

    申请号:US15663556

    申请日:2017-07-28

    Abstract: Embodiments herein describe photonic systems that include a germanium photodetector thermally coupled to a resistive element. Current flowing through the resistive element increases the temperature of the resistive element. Heat from the resistive element increases the temperature of the thermally coupled photodetector. Increasing the temperature of the photodetector increases the responsivity of the photodetector. The bias voltage of the photodetector can be increased to increase the bandwidth of the photodetector. In various embodiments, the photodetector includes at least one waveguide to receive light into the photodetector. Other embodiments include multiple resistive elements thermally coupled to the photodetector.

    Germanium multi-directional detector

    公开(公告)号:US09978890B1

    公开(公告)日:2018-05-22

    申请号:US15440209

    申请日:2017-02-23

    Abstract: Embodiments herein describe a photonic device that includes a germanium photodetector coupled to multiple silicon waveguides. In one embodiment, the silicon waveguides optically couple to a layer of germanium material. In one embodiment, if the germanium material forms a polygon, then a respective silicon waveguide optically couple to each of the corners of the polygon. Each of the plurality of input silicon waveguides may be arranged to transmit light in a direction under the germanium that is offset relative to both sides of the germanium forming the respective corner. In another example, the germanium material may be a circle or ellipse in which case the silicon waveguides terminate at or close to a non-straight, curved surface of the germanium material. As described below, optically coupling the silicon waveguides at a non-straight surface can reduce the distance charge carriers have to travel in the optical detector which can improve bandwidth.

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