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公开(公告)号：US07118783B2
公开(公告)日：2006-10-10
申请号：US10183250
申请日：2002-06-26
IPC分类号： C23C16/02
CPC分类号： C23C16/4481
摘要： CVD, ALD, and other vapor processes used in processing semiconductor workpieces often require volatilizing a liquid or solid precursor. Certain embodiments of the invention provide improved and/or more consistent volatilization rates by moving a reaction vessel. In one exemplary embodiment, a reaction vessel is rotated about a rotation axis which is disposed at an angle with respect to vertical. This deposits a quantity of the reaction precursor on an interior surface of the vessel's sidewall which is exposed to the headspace as the vessel rotates. Other embodiments employ drivers adapted to move the reaction vessel in other manners, such as a pendulum arm to oscillate the vessel along an arcuate path or a mechanical linkage which moves the vessel along an elliptical path.
摘要翻译： 用于处理半导体工件中的CVD，ALD和其它蒸气方法通常需要挥发液体或固体前体。 本发明的某些实施方案通过移动反应容器提供改进的和/或更一致的挥发速率。 在一个示例性实施例中，反应容器围绕相对于垂直方向以一定角度设置的旋转轴线旋转。 这将一定数量的反应前体沉积在容器侧壁的内表面上，该容器的侧壁在容器旋转时暴露于顶部空间。 其他实施例使用适于以其他方式移动反应容器的驱动器，例如摆臂，以沿着沿着椭圆形路径移动容器的弓形路径或机械连杆摆动容器。
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公开(公告)号：US06797337B2
公开(公告)日：2004-09-28
申请号：US10223175
申请日：2002-08-19
IPC分类号： B05D300
CPC分类号： C23C16/4481
摘要： A method and apparatus for delivering precursors to a chemical vapor deposition or atomic layer deposition chamber is provided. The apparatus includes a temperature-controlled vessel containing a precursor. An energy source is used to vaporize the precursor at its surface such that substantially no thermal decomposition of the remaining precursor occurs. The energy source may include a carrier gas, a radio frequency coupling device, or an infrared irradiation source. After the precursor is exposed to the energy source, the vaporized portion of the precursor is transported via a temperature-controlled conduit to a chemical vapor deposition or atomic deposition chamber for further processing.
摘要翻译： 提供了用于将前体输送到化学气相沉积或原子层沉积室的方法和装置。 该装置包括含有前体的温度控制容器。 使用能源在其表面蒸发前体，使得基本上不会发生剩余前体的热分解。 能量源可以包括载气，射频耦合装置或红外辐射源。 在前体暴露于能量源之后，前体的蒸发部分通过温度控制的导管输送到化学气相沉积或原子沉积室，用于进一步处理。
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公开(公告)号：US06821347B2
公开(公告)日：2004-11-23
申请号：US10191889
申请日：2002-07-08
申请人： Craig M. Carpenter , Allen P. Mardian , Ross S. Dando , Kimberly R. Tschepen , Garo J. Derderian
发明人： Craig M. Carpenter , Allen P. Mardian , Ross S. Dando , Kimberly R. Tschepen , Garo J. Derderian
IPC分类号： B05C318
CPC分类号： C23C16/45544 , C23C16/45565
摘要： Reactors for vapor deposition of materials onto a microelectronic workpiece, systems that include such reactors, and methods for depositing materials onto microelectronic workpieces. In one embodiment, a reactor for vapor deposition of a material comprises a reaction chamber and a gas distributor. The reaction chamber can include an inlet and an outlet. The gas distributor is positioned in the reaction chamber. The gas distributor has a compartment coupled to the inlet to receive a gas flow and a distributor plate including a first surface facing the compartment, a second surface facing the reaction chamber, and a plurality of passageways. The passageways extend through the distributor plate from the first surface to the second surface. Additionally, at least one of the passageways has at least a partially occluded flow path through the plate. For example, the occluded passageway can be canted at an oblique angle relative to the first surface of the distributor plate so that gas flowing through the canted passageway changes direction as it passes through the distributor plate.
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4.发明授权公开(公告)号：US07387685B2
公开(公告)日：2008-06-17
申请号：US10933604
申请日：2004-09-02
申请人： Craig M. Carpenter , Allen P. Mardian , Ross S. Dando , Kimberly R. Tschepen , Garo J. Derderian
发明人： Craig M. Carpenter , Allen P. Mardian , Ross S. Dando , Kimberly R. Tschepen , Garo J. Derderian
IPC分类号： C23C16/455 , C23C16/00 , H01L21/3065
CPC分类号： C23C16/45544 , C23C16/45565
摘要： Reactors for vapor deposition of materials onto a microelectronic workpiece, systems that include such reactors, and methods for depositing materials onto microelectronic workpieces. In one embodiment, a reactor for vapor deposition of a material comprises a reaction chamber and a gas distributor. The reaction chamber can include an inlet and an outlet. The gas distributor is positioned in the reaction chamber. The gas distributor has a compartment coupled to the inlet to receive a gas flow and a distributor plate including a first surface facing the compartment, a second surface facing the reaction chamber, and a plurality of passageways. The passageways extend through the distributor plate from the first surface to the second surface. Additionally, at least one of the passageways has at least a partially occluded flow path through the plate. For example, the occluded passageway can be canted at an oblique angle relative to the first surface of the distributor plate so that gas flowing through the canted passageway changes direction as it passes through the distributor plate.
摘要翻译： 用于将材料气相沉积到微电子工件上的反应器，包括这种反应器的系统以及将材料沉积到微电子工件上的方法。 在一个实施方案中，用于气相沉积材料的反应器包括反应室和气体分配器。 反应室可以包括入口和出口。 气体分配器位于反应室中。 气体分配器具有联接到入口以接收气流的隔室和分布板，分配器板包括面向隔室的第一表面，面对反应室的第二表面和多个通道。 通道从第一表面延伸穿过分配器板到第二表面。 此外，至少一个通道具有穿过板的至少一部分闭塞的流动路径。 例如，封闭通道可以相对于分配器板的第一表面倾斜地倾斜，使得流过倾斜通道的气体在通过分配器板时改变方向。
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公开(公告)号：US07311947B2
公开(公告)日：2007-12-25
申请号：US10683806
申请日：2003-10-10
IPC分类号： C23C14/28
CPC分类号： H01L21/02271 , C23C16/45523 , C23C16/483 , H01L21/0228 , H01L21/3141 , H01L29/78
摘要： A method of forming a film on a substrate includes activating a gas precursor to form a material on the substrate by irradiating the gas precursor with electromagnetic energy at a frequency tuned to an absorption frequency of the gas precursor.
摘要翻译： 在衬底上形成膜的方法包括通过用调谐到气体前体的吸收频率的频率的电磁能照射气体前体来激活气体前体以在衬底上形成材料。
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6.发明授权Apparatus for controlling gas pulsing in processes for depositing materials onto micro-device workpieces 失效用于在将材料沉积到微器件工件上的过程中控制气体脉动的装置公开(公告)号：US07481887B2
公开(公告)日：2009-01-27
申请号：US11027809
申请日：2004-12-29
CPC分类号： C23C16/45525 , C23C16/52
摘要： An apparatus for depositing materials onto a micro-device workpiece includes a gas source system configured to provide a first precursor, a second precursor, and a purge gas. The apparatus can also include a valve assembly coupled to the gas source system. The valve assembly is configured to control a flow of the first precursor, a flow the second precursor, and a flow of the purge gas. Another component of the apparatus is a reaction chamber including an inlet coupled to the valve assembly, a workpiece holder in the reaction chamber, and an outlet downstream from the workpiece holder. The apparatus also includes a monitoring system and a controller. The monitoring system comprises a radiation source that directs a selected radiation through the reaction chamber and a detector that senses a parameter of the radiation directed through the reaction chamber. The controller is operatively coupled to the monitoring system and the valve assembly. The controller contains computer operable instructions to terminate the flow of the first precursor, the flow of the second precursor and/or the flow of the purge gas based on the parameter sensed by the monitoring system in real-time during a deposition cycle of a workpiece.
摘要翻译： 用于将材料沉积到微器件工件上的装置包括构造成提供第一前体，第二前体和吹扫气体的气体源系统。 该装置还可以包括联接到气源系统的阀组件。 阀组件被配置为控制第一前体的流动，第二前体的流动和净化气体的流动。 该装置的另一部件是反应室，其包括联接到阀组件的入口，反应室中的工件保持器和工件保持器下游的出口。 该装置还包括监视系统和控制器。 监测系统包括将选定的辐射引导通过反应室的辐射源和感测通过反应室引导的辐射的参数的检测器。 控制器可操作地耦合到监视系统和阀组件。 控制器包含计算机可操作的指令，以在工件的沉积循环期间实时地基于由监测系统感测的参数终止第一前体的流动，第二前体的流动和/或吹扫气体的流动 。
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公开(公告)号：US06858264B2
公开(公告)日：2005-02-22
申请号：US10132003
申请日：2002-04-24
CPC分类号： C23C16/4405 , C23C16/4412
摘要： A chemical vapor deposition chamber has a vacuum exhaust line extending therefrom. Material is deposited over a first plurality of substrates within the deposition chamber under conditions effective to deposit effluent product over internal walls of the vacuum exhaust line. At least a portion of the vacuum exhaust line is isolated from the deposition chamber. While isolating, a cleaning fluid is flowed to the vacuum exhaust line effective to at least reduce thickness of the effluent product over the internal walls within the vacuum exhaust line from what it was prior to initiating said flowing. After said flowing, the portion of the vacuum exhaust line and the deposition chamber are provided in fluid communication with one another and material is deposited over a second plurality of substrates within the deposition chamber under conditions effective to deposit effluent product over internal walls of the vacuum exhaust line.
摘要翻译： 化学气相沉积室具有从其延伸的真空排气管。 在有效地将流出物产物沉积在真空排气管的内壁上的条件下，材料沉积在沉积室内的第一组多个衬底上。 真空排气管线的至少一部分与沉积室隔离。 在分离时，清洁流体流到真空排气管线，有效地至少将真空排气管内的内壁上的流出物的厚度从起始流动之前的厚度减小到最小。 在所述流动之后，真空排气管线和沉积室的部分设置成彼此流体连通，并且在有效地将流出物产物沉积在真空内壁上的条件下，在沉积室内的第二多个基板上沉积材料 排气管路。
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8.发明授权公开(公告)号：US06800172B2
公开(公告)日：2004-10-05
申请号：US10082599
申请日：2002-02-22
申请人： Craig M. Carpenter , Ross S. Dando , Allen P. Mardian , Kevin T. Hamer , Raynald B. Cantin , Philip H. Campbell , Kimberly R. Tschepen , Randy W. Mercil
发明人： Craig M. Carpenter , Ross S. Dando , Allen P. Mardian , Kevin T. Hamer , Raynald B. Cantin , Philip H. Campbell , Kimberly R. Tschepen , Randy W. Mercil
IPC分类号： C23F100
CPC分类号： H01L21/67126 , C23C16/4409 , C23C16/54 , Y10S414/139
摘要： A semiconductor substrate processor includes a substrate transfer chamber and a plurality of substrate processing chambers connected therewith. An interfacial structure is received between at least one of the processing chambers and the transfer chamber. The interfacial structure includes a substantially non-metallic, thermally insulative mass of material interposed between the one processing chamber and the transfer chamber. The mass is of sufficient volume to effectively reduce heat transfer from the processing chamber to the transfer chamber than would otherwise occur in the absence of said mass of material. An interfacial structure includes a body having a substrate passageway extending therethrough. The passageway includes walls at least a portion of which are substantially metallic. The body includes material peripheral of the walls which is substantially non-metallic and thermally insulative. The substantially non-metallic material has mounting openings extending at least partially therein.
摘要翻译： 半导体衬底处理器包括衬底传送室和与之连接的多个衬底处理室。 在至少一个处理室和传送室之间接收界面结构。 界面结构包括插入在一个处理室和传送室之间的基本上非金属的绝热材料块。 质量足够的体积以有效地减少从处理室到传送室的传热比否则不存在所述材料块的情况。 界面结构包括具有延伸穿过其中的基底通道的主体。 该通道包括其至少一部分基本上是金属的壁。 主体包括基本上非金属和热绝缘的壁的材料周边。 基本上非金属材料具有其中至少部分延伸的安装开口。
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9.发明授权Method of replacing at least a portion of semiconductor substrate deposition process kit hardware, and method of depositing materials over a plurality of semiconductor substrates 失效替代半导体衬底沉积工艺组件硬件的至少一部分的方法以及在多个半导体衬底上沉积材料的方法公开(公告)号：US06787373B2
公开(公告)日：2004-09-07
申请号：US10396268
申请日：2003-03-24
IPC分类号： H01L2100
CPC分类号： C23C16/4401 , C23C16/54 , Y10S414/137
摘要： The invention includes an engagement mechanism for semiconductor substrate deposition process kit hardware, including a body having a distal portion and a proximal portion. The body is sized for movement through a passageway of a semiconductor substrate deposition chamber through which semiconductor substrates pass into and out of the chamber for deposition processing. At least engager is mounted to the distal portion of the body The engager is sized for movement through said passageway with the body. The engager is configured to releasably engage a component of process kit hardware received within said chamber. The invention includes methods of replacing at least a portion of semiconductor substrate deposition process kit hardware. The invention includes methods of depositing materials over a plurality of semiconductor substrates. Other implementations are contemplated.
摘要翻译： 本发明包括用于半导体衬底沉积工艺组件硬件的接合机构，包括具有远端部分和近端部分的本体。 本体的尺寸适于通过半导体衬底沉积室的通道移动，半导体衬底通过该通道进入和离开用于沉积处理的腔室。 至少该夹具安装到身体的远端部分。 接合器的尺寸适合于通过身体的所述通道移动。 接合器构造成可释放地接合在所述室内容纳的处理套件硬件的部件。 本发明包括替换半导体衬底沉积工艺组件硬件的至少一部分的方法。 本发明包括在多个半导体衬底上沉积材料的方法。 考虑其他实现。
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10.发明授权Methods for controlling gas pulsing in processes for depositing materials onto micro-device workpieces 失效用于在将材料沉积到微器件工件上的过程中控制气体脉动的方法公开(公告)号：US06838114B2
公开(公告)日：2005-01-04
申请号：US10155547
申请日：2002-05-24
IPC分类号： C23C16/44 , C23C16/455 , C23C16/52 , C23C16/00
CPC分类号： C23C16/45525 , C23C16/52
摘要： Methods for depositing materials onto micro-device workpieces in a reaction chamber. One embodiment of such a method comprises providing a flow of a first precursor through the reaction chamber to deposit the first precursor onto the micro-device workpiece in the reaction chamber, and providing a flow of a purge gas through the reaction chamber to purge excess amounts of the first precursor. The method continues by monitoring a parameter correlated to a quantity of the first precursor and/or the purge gas in the reaction chamber as the first precursor and/or the purge gas flows through the reaction chamber. An additional aspect of this method is terminating the flow of the first precursor and/or the flow of the purge gas based on the monitored parameter of the quantity of the first precursor and/or the purge gas. The procedure of monitoring a parameter correlated to a quantity of the first precursor and/or the purge gas can comprise determining a concentration of the first precursor and/or the purge gas in the reaction chamber using a selected radiation.
摘要翻译： 在反应室中将材料沉积到微器件工件上的方法。 这种方法的一个实施方案包括提供通过反应室的第一前体的流动，以将第一前体沉积在反应室中的微器件工件上，并且提供净化气体流过反应室以净化过量 的第一个前体。 当第一前体和/或吹扫气体流过反应室时，通过监测与反应室中的第一前体和/或吹扫气体的量相关的参数来继续该方法。 该方法的另一方面是基于所监测的第一前体和/或吹扫气体的量的参数来终止第一前体和/或吹扫气体的流动。 监测与第一前体和/或吹扫气体的量相关的参数的程序可以包括使用所选择的辐射确定反应室中的第一前体和/或吹扫气体的浓度。
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