公开(公告)号：US20150069430A1

公开(公告)日：2015-03-12

申请号：US14120297

申请日：2014-05-14

Applicant: Cree, Inc.

Inventor： Brian T. Collins ,  Matthew Donofrio ,  Kevin W. Haberern ,  Bennett Langsdorf ,  Anoop Mathew ,  Harry A. Seibel ,  Iliya Todorov ,  Bradley E. Williams

IPC: H01L33/50 ,  H01L27/15

CPC classification number: H01L33/50 ,  H01L33/44

Abstract: A phosphor-converted light emitting device includes a light emitting diode (LED) on a substrate, where the LED comprises a stack of epitaxial layers comprising a p-n junction. A wavelength conversion material is in optical communication with the LED. According to one embodiment of the phosphor-converted light emitting device, a selective filter is adjacent to the wavelength conversion material, and the selective filter comprises a plurality of nanoparticles for absorbing light from the LED not down-converted by the wavelength conversion material. According to another embodiment of the phosphor-converted light emitting device, a perpendicular distance between a perimeter of the LED on the substrate and an edge of the substrate is at least about 24 microns. According to another embodiment of the phosphor-converted light emitting device, the LED comprises a mirror layer on one or more sidewalls thereof for reducing light leakage through the sidewalls.

Abstract translation: 磷光体转换发光器件包括在衬底上的发光二极管（LED），其中LED包括一叠包括p-n结的外延层。 波长转换材料与LED光学通信。 根据荧光体转换发光器件的一个实施例，选择滤光器与波长转换材料相邻，并且选择滤光器包括多个纳米颗粒，用于吸收未被波长转换材料下转换的LED的光。 根据磷光体转换发光器件的另一实施例，衬底上LED的周边与衬底的边缘之间的垂直距离为至少约24微米。 根据荧光体转换发光器件的另一实施例，LED包括在其一个或多个侧壁上的镜层，用于减少通过侧壁的光泄漏。

公开(公告)号：US20160115384A1

公开(公告)日：2016-04-28

申请号：US14525551

申请日：2014-10-28

Applicant: Cree, Inc.

Inventor： Iliya Todorov ,  Harry A. Seibel ,  David M. Clatterbuck

IPC: C09K11/77 ,  H05B33/12

CPC classification number: C09K11/7734 ,  H05B33/12

Abstract: A light emitting diode (LED) component comprises an LED comprising a dominant wavelength in a range of from about 425 nm to about 475 nm, and a phosphor composition in optical communication with the LED. The phosphor composition comprises a primary phase and one or more additional phases. An emission spectrum of the phosphor composition has a peak emission wavelength of between about 640 nm and about 670 nm and a FWHM of between about 40 nm and 65 nm. An x-ray diffraction pattern of the phosphor composition comprises a first intensity peak corresponding to the one or more additional phases at a 2-theta value of from about 26.5° to about 26.8°.

Abstract translation: 发光二极管（LED）组件包括包含在大约425nm至大约475nm范围内的主波长的LED和与LED光学通信的荧光体组合物。 磷光体组合物包含主相和一个或多个附加相。 荧光体组合物的发射光谱具有在约640nm和约670nm之间的峰值发射波长和在约40nm和65nm之间的FWHM。 荧光体组合物的x射线衍射图包括对应于在约26.5°至约26.8°的2θ值处的一个或多个附加相的第一强度峰。

公开(公告)号：US20140339593A1

公开(公告)日：2014-11-20

申请号：US14453878

申请日：2014-08-07

Applicant: Cree, Inc.

Inventor： David M. Clatterbuck ,  Harry A. Seibel ,  Douglas E. Kinkenon

IPC: H01L33/50 ,  C09K11/77 ,  H01L33/56

CPC classification number: H01L33/502 ,  C09K11/7774 ,  H01L33/504

Abstract: A light emitting diode (LED) component comprises an LED having a dominant wavelength in a range of from about 425 nm to less than 460 nm and a phosphor in optical communication with the LED. The phosphor includes a host lattice comprising yttrium aluminum garnet (YAG), and may include an activator comprising Ce and a substitutional dopant comprising Ga incorporated in the host lattice. An emission spectrum of the phosphor has a maximum intensity in a wavelength range of from about 540 nm to about 570 nm, and an excitation spectrum of the phosphor comprises an intensity at 440 nm equivalent to at least about 85% of a maximum intensity of the excitation spectrum.

Abstract translation: 发光二极管（LED）组件包括具有在大约425nm至小于460nm的范围内的主波长的LED和与LED光学通信的荧光体。 磷光体包括包含钇铝石榴石（YAG）的主晶格，并且可以包括包含Ce的活化剂和包含在主晶格中的Ga的取代掺杂剂。 荧光体的发射光谱在约540nm至约570nm的波长范围内具有最大强度，并且荧光体的激发光谱包括在440nm处的强度，相当于最大强度的至少约85％ 激发光谱。

公开(公告)号：US10283681B2

公开(公告)日：2019-05-07

申请号：US14120297

申请日：2014-05-14

Applicant: Cree, Inc.

Inventor： Brian T. Collins ,  Matthew Donofrio ,  Kevin W. Haberern ,  Bennett Langsdorf ,  Anoop Mathew ,  Harry A. Seibel ,  Iliya Todorov ,  Bradley E. Williams

IPC: H01L33/00 ,  H01L33/50 ,  H01L33/44

Abstract: A phosphor-converted light emitting device includes a light emitting diode (LED) on a substrate, where the LED comprises a stack of epitaxial layers comprising a p-n junction. A wavelength conversion material is in optical communication with the LED. According to one embodiment of the phosphor-converted light emitting device, a selective filter is adjacent to the wavelength conversion material, and the selective filter comprises a plurality of nanoparticles for absorbing light from the LED not down-converted by the wavelength conversion material. According to another embodiment of the phosphor-converted light emitting device, a perpendicular distance between a perimeter of the LED on the substrate and an edge of the substrate is at least about 24 microns. According to another embodiment of the phosphor-converted light emitting device, the LED comprises a mirror layer on one or more sidewalls thereof for reducing light leakage through the sidewalls.

公开(公告)号：US09437788B2

公开(公告)日：2016-09-06

申请号：US14453878

申请日：2014-08-07

Applicant: Cree, Inc.

Inventor： David M. Clatterbuck ,  Harry A. Seibel ,  Douglas E. Kinkenon

IPC: H01L33/50 ,  H01L33/56 ,  C09K11/77

CPC classification number: H01L33/502 ,  C09K11/7774 ,  H01L33/504

Abstract: A light emitting diode (LED) component comprises an LED having a dominant wavelength in a range of from about 425 nm to less than 460 nm and a phosphor in optical communication with the LED. The phosphor includes a host lattice comprising yttrium aluminum garnet (YAG), and may include an activator comprising Ce and a substitutional dopant comprising Ga incorporated in the host lattice. An emission spectrum of the phosphor has a maximum intensity in a wavelength range of from about 540 nm to about 570 nm, and an excitation spectrum of the phosphor comprises an intensity at 440 nm equivalent to at least about 85% of a maximum intensity of the excitation spectrum.

Abstract translation: 发光二极管（LED）组件包括具有在大约425nm至小于460nm的范围内的主波长的LED和与LED光学通信的荧光体。 磷光体包括包含钇铝石榴石（YAG）的主晶格，并且可以包括包含Ce的活化剂和包含在主晶格中的Ga的取代掺杂剂。 荧光体的发射光谱在约540nm至约570nm的波长范围内具有最大强度，并且荧光体的激发光谱包括在440nm处的强度，相当于最大强度的至少约85％ 激发光谱。