Indicia for light emitting diode chips

    公开(公告)号:US11145689B2

    公开(公告)日:2021-10-12

    申请号:US16203709

    申请日:2018-11-29

    申请人: Cree, Inc.

    摘要: Solid-state lighting devices including light-emitting diodes (LEDs) and more particularly LED chips and related methods are disclosed. LED chips are provided that include an indicia arranged between a primary light-emitting face and a mounting face of the LED chip. The indicia may include at least one of a logo, one or more alphanumeric characters, or a symbol, among others that are configured to convey information. Arrangements of at least one of an n-contact, a p-contact, or a reflector layer of the LED chip may form the indicia. LED chips are also provided where at least a portion of an indicia is arranged on a mounting face of the LED chip. Indicia are provided that may be visible through primary light-emitting faces when LED chips are electrically activated or electrically deactivated. In this regard, the indicia may be embedded within LED chips while still being able to convey information.

    Phosphor-converted light emitting device

    公开(公告)号:US10283681B2

    公开(公告)日:2019-05-07

    申请号:US14120297

    申请日:2014-05-14

    申请人: Cree, Inc.

    IPC分类号: H01L33/00 H01L33/50 H01L33/44

    摘要: A phosphor-converted light emitting device includes a light emitting diode (LED) on a substrate, where the LED comprises a stack of epitaxial layers comprising a p-n junction. A wavelength conversion material is in optical communication with the LED. According to one embodiment of the phosphor-converted light emitting device, a selective filter is adjacent to the wavelength conversion material, and the selective filter comprises a plurality of nanoparticles for absorbing light from the LED not down-converted by the wavelength conversion material. According to another embodiment of the phosphor-converted light emitting device, a perpendicular distance between a perimeter of the LED on the substrate and an edge of the substrate is at least about 24 microns. According to another embodiment of the phosphor-converted light emitting device, the LED comprises a mirror layer on one or more sidewalls thereof for reducing light leakage through the sidewalls.

    INDICIA FOR LIGHT EMITTING DIODE CHIPS
    3.
    发明申请

    公开(公告)号:US20200176507A1

    公开(公告)日:2020-06-04

    申请号:US16203709

    申请日:2018-11-29

    申请人: Cree, Inc.

    摘要: Solid-state lighting devices including light-emitting diodes (LEDs) and more particularly LED chips and related methods are disclosed. LED chips are provided that include an indicia arranged between a primary light-emitting face and a mounting face of the LED chip. The indicia may include at least one of a logo, one or more alphanumeric characters, or a symbol, among others that are configured to convey information. Arrangements of at least one of an n-contact, a p-contact, or a reflector layer of the LED chip may form the indicia. LED chips are also provided where at least a portion of an indicia is arranged on a mounting face of the LED chip. Indicia are provided that may be visible through primary light-emitting faces when LED chips are electrically activated or electrically deactivated. In this regard, the indicia may be embedded within LED chips while still being able to convey information.

    Phosphor-converted light emitting device
    4.
    发明申请
    Phosphor-converted light emitting device 审中-公开
    磷光转换发光器件

    公开(公告)号:US20150069430A1

    公开(公告)日:2015-03-12

    申请号:US14120297

    申请日:2014-05-14

    申请人: Cree, Inc.

    IPC分类号: H01L33/50 H01L27/15

    CPC分类号: H01L33/50 H01L33/44

    摘要: A phosphor-converted light emitting device includes a light emitting diode (LED) on a substrate, where the LED comprises a stack of epitaxial layers comprising a p-n junction. A wavelength conversion material is in optical communication with the LED. According to one embodiment of the phosphor-converted light emitting device, a selective filter is adjacent to the wavelength conversion material, and the selective filter comprises a plurality of nanoparticles for absorbing light from the LED not down-converted by the wavelength conversion material. According to another embodiment of the phosphor-converted light emitting device, a perpendicular distance between a perimeter of the LED on the substrate and an edge of the substrate is at least about 24 microns. According to another embodiment of the phosphor-converted light emitting device, the LED comprises a mirror layer on one or more sidewalls thereof for reducing light leakage through the sidewalls.

    摘要翻译: 磷光体转换发光器件包括在衬底上的发光二极管(LED),其中LED包括一叠包括p-n结的外延层。 波长转换材料与LED光学通信。 根据荧光体转换发光器件的一个实施例,选择滤光器与波长转换材料相邻,并且选择滤光器包括多个纳米颗粒,用于吸收未被波长转换材料下转换的LED的光。 根据磷光体转换发光器件的另一实施例,衬底上LED的周边与衬底的边缘之间的垂直距离为至少约24微米。 根据荧光体转换发光器件的另一实施例,LED包括在其一个或多个侧壁上的镜层,用于减少通过侧壁的光泄漏。