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    Flash memory devices and systems
    2.
    发明授权
    Flash memory devices and systems 有权
    闪存设备和系统

    公开(公告)号：US08570809B2

    公开(公告)日：2013-10-29

    申请号：US13340091

    申请日：2011-12-29

    申请人： Ryan T. Hirose ,  Bogdan Georgescu ,  Ashish Amonkar ,  Sean Mulholland ,  Vijay Raghavan ,  Cristinel Zonte

    发明人： Ryan T. Hirose ,  Bogdan Georgescu ,  Ashish Amonkar ,  Sean Mulholland ,  Vijay Raghavan ,  Cristinel Zonte

    IPC分类号： G11C16/04

    CPC分类号： G11C16/0466 ,  G11C16/06 ,  G11C16/30 ,  G11C16/3418 ,  H01L29/792

    摘要： Flash memory devices and systems are provided. One flash memory device includes an n-channel metal oxide semiconductor field-effect transistor (nMOSFET), a silicon-oxide-nitride-oxide silicon (SONOS) transistor coupled to the nMOSFET, and an isolated p-well coupled to the nMOSFET and the SONOS transistor. A flash memory system includes an array of memory devices divided into a plurality of paired sectors, a global bit line (GBL) configured to provide high voltage to each respective sector during erase and program operations coupled to each of the plurality of sectors, and a plurality of sense amplifiers coupled between a respective pair of sectors. Methods for operating a flash memory are also provided. One method includes providing high voltage, via the GBL, to the paired sectors during erase and program operations and providing low voltage, via a local bit line, to each memory device during read operations.

    摘要翻译： 提供了闪存设备和系统。 一个闪速存储器件包括n沟道金属氧化物半导体场效应晶体管（nMOSFET），耦合到nMOSFET的氧化硅 - 氧化物 - 氧化物硅（SONOS）晶体管和耦合到nMOSFET的隔离p阱，以及 SONOS晶体管。 闪速存储器系统包括划分成多个成对扇区的存储器件阵列，全局位线（GBL）被配置为在擦除期间向每个相应的扇区提供高电压，并且耦合到多个扇区中的每一个扇区，以及 耦合在相应的一对扇区之间的多个读出放大器。 还提供了操作闪速存储器的方法。 一种方法包括在擦除和编程操作期间通过GBL向配对的扇区提供高电压，并且在读取操作期间通过局部位线向每个存储器件提供低电压。

    Systems and methods for sensing in memory devices
    5.
    发明授权
    Systems and methods for sensing in memory devices 有权
    用于在存储器件中感测的系统和方法

    公开(公告)号：US08773913B1

    公开(公告)日：2014-07-08

    申请号：US13340362

    申请日：2011-12-29

    申请人： Cristinel Zonte ,  Vijay Raghavan

    发明人： Cristinel Zonte ,  Vijay Raghavan

    IPC分类号： G11C16/06

    CPC分类号： G11C16/06 ,  G11C7/14 ,  G11C11/5642 ,  G11C16/28

    摘要： Memory circuits and systems are provided. One memory circuit includes an active memory device, an inactive memory device, and a sense amplifier coupled between the active memory device and the inactive memory device. A reference current is coupled between the inactive memory device and the sense amplifier. The active memory device and the inactive memory device are the same type of memory device and the inactive memory device is a reference device with respect to the active memory device's current. A memory system includes a plurality of the above memory circuit coupled to one another. Methods for sensing current in a memory circuit are also provided. One method includes supplying power to a first memory device and comparing the amount of current in the first memory device and a reference current coupled to a second memory device that is the same type of memory device as the first memory device.

    摘要翻译： 提供存储器电路和系统。 一个存储器电路包括有源存储器件，非活动存储器件和耦合在有源存储器件与非活性存储器件之间的读出放大器。 参考电流耦合在非活动存储器件和读出放大器之间。 有源存储器件和非活动存储器件是相同类型的存储器件，而非活动存储器件是相对于有效存储器件电流的参考器件。 存储器系统包括彼此耦合的多个上述存储器电路。 还提供了用于感测存储器电路中的电流的方法。 一种方法包括向第一存储设备供电并比较第一存储设备中的电流量和耦合到作为与第一存储器设备相同类型的存储设备的第二存储设备的参考电流。

    Circuit for a current having a programmable temperature slope
    6.
    发明授权
    Circuit for a current having a programmable temperature slope 有权
    具有可编程温度斜率的电流的电路

    公开(公告)号：US08531235B1

    公开(公告)日：2013-09-10

    申请号：US13326773

    申请日：2011-12-15

    申请人： Cristinel Zonte

    发明人： Cristinel Zonte

    IPC分类号： H01L35/00

    CPC分类号： G05F3/30

    摘要： A current reference circuit configured to generate a reference current with a programmable temperature slope is disclosed. The current reference circuit includes a resistor. The current reference circuit includes a bandgap voltage circuit configured to generate a bandgap voltage and coupled to the resistor. The current reference circuit includes a bias voltage circuit configured to generate a variable-polarity bias voltage and coupled to the bandgap voltage circuit. The bandgap voltage circuit is configured to add the variable-polarity bias voltage to the bandgap voltage to generate the reference current through the resistor.

    摘要翻译： 公开了一种被配置为产生具有可编程温度斜率的参考电流的电流参考电路。 电流参考电路包括一个电阻器。 电流参考电路包括带隙电压电路，其被配置为产生带隙电压并耦合到电阻器。 电流参考电路包括被配置为产生可变极性偏置电压并耦合到带隙电压电路的偏置电压电路。 带隙电压电路被配置为将可变极性偏置电压添加到带隙电压以产生通过电阻器的参考电流。

    System to adjust a reference current
    7.
    发明授权
    System to adjust a reference current 有权
    系统调整参考电流

    公开(公告)号：US07808842B1

    公开(公告)日：2010-10-05

    申请号：US12207104

    申请日：2008-09-09

    申请人： Vijay Kumar Srinivasa Raghavan ,  Cristinel Zonte

    发明人： Vijay Kumar Srinivasa Raghavan ,  Cristinel Zonte

    IPC分类号： G11C16/04

    CPC分类号： G11C16/28 ,  G11C16/30

    摘要： System and methods to adjust a reference current are disclosed. A current reference circuit generates an adjustable reference current. A microprocessor-based feedback circuit adjusts the reference current, wherein the adjustment is based on read and write parameters attributed to a memory cell.

    摘要翻译： 公开了调整参考电流的系统和方法。 电流参考电路产生可调参考电流。 基于微处理器的反馈电路调整参考电流，其中调整基于归因于存储器单元的读和写参数。

    High precision current reference using offset PTAT correction
    9.
    发明授权
    High precision current reference using offset PTAT correction 有权
    使用偏移PTAT校正的高精度电流参考

    公开(公告)号：US08217713B1

    公开(公告)日：2012-07-10

    申请号：US11975967

    申请日：2007-10-22

    申请人： Vijay Kumar Srinivasa Raghavan ,  Cristinel Zonte

    发明人： Vijay Kumar Srinivasa Raghavan ,  Cristinel Zonte

    IPC分类号： G05F1/10

    CPC分类号： G05F3/30

    摘要： A device for providing a high precision current reference comprising a PTAT generator circuit for supplying a voltage, a high precision current reference offset generator circuit for generating a high precision current offset to compensate for variation in a resistance component due to variation in temperature, and a current adding circuit for aggregating the current from the PTAT generator circuit and the current from the high precision current reference offset generator circuit. In one embodiment, a high precision current reference generated is substantially independent of temperature. On-chip resistors may be used to design a high precision current reference. Accordingly, high precision current reference generated maintains high precision with zero temperature co-efficient using on-chip resistors that are substantially cheaper than off-chip resistors.

    摘要翻译： 一种用于提供高精度电流基准的装置，包括用于提供电压的PTAT发生器电路，用于产生高精度电流偏移以补偿由于温度变化引起的电阻分量变化的高精度电流基准偏移发生器电路，以及 用于聚集来自PTAT发生器电路的电流的电流加法电路和来自高精度电流基准偏移发生器电路的电流。 在一个实施例中，产生的高精度电流基准基本上与温度无关。 片上电阻可用于设计高精度电流基准。 因此，产生的高精度电流基准通过使用比芯片外电阻器实质上便宜的片上电阻器的零温度系数来保持高精度。