公开(公告)号：US10777545B2

公开(公告)日：2020-09-15

申请号：US16377563

申请日：2019-04-08

Applicant: DENSO CORPORATION

Inventor： Akira Yamada ,  Shinya Sakurai ,  Takashi Nakano ,  Yosuke Kondo ,  Mutsuya Motojima

IPC: H01L27/02 ,  H01L29/78 ,  H01L29/06 ,  H01L29/10 ,  H01L21/8234 ,  H01L21/8222 ,  H01L27/08 ,  H01L21/822 ,  H01L27/06 ,  H01L27/04 ,  H01L27/088

Abstract: A semiconductor device configures a protection element that protects a protection target element connected between a cathode electrode and an anode electrode when a parasitic transistor configured by a cathode region, a first conductivity type well layer, and a second conductivity type well is turned on and electrical continuity is established between the cathode electrode and the anode electrode. The semiconductor device includes a plurality of body regions in one cell of the protection element, and the plurality of body regions is brought in contact with the cathode electrode.

公开(公告)号：US09741846B2

公开(公告)日：2017-08-22

申请号：US15039564

申请日：2014-12-17

Applicant: DENSO CORPORATION

Inventor： Hiroshi Kameoka ,  Shigeki Takahashi ,  Akira Yamada ,  Atsushi Kasahara

IPC: H01L29/66 ,  H01L29/78 ,  H01L21/84 ,  H01L27/092 ,  H01L27/12 ,  H01L29/40 ,  H01L29/06 ,  H01L29/08 ,  H01L29/10 ,  H01L29/423

CPC classification number: H01L29/7824 ,  H01L21/84 ,  H01L27/0922 ,  H01L27/1203 ,  H01L29/0692 ,  H01L29/0878 ,  H01L29/1095 ,  H01L29/402 ,  H01L29/42368 ,  H01L29/66681

Abstract: A semiconductor device includes a lateral transistor having: a semiconductor substrate including a drift layer; a first impurity layer in the drift layer; a channel layer in the drift layer; a second impurity layer in the channel layer; a separation insulation film on the drift layer between the channel layer and the first impurity layer; a gate insulation film on a channel region between the second impurity layer and the drift layer connected with the separation insulation film; a gate electrode on the gate insulation film and the separation insulation film; a first electrode connected with the first impurity layer; a second electrode connected with the second impurity layer and the channel layer; and a field plate on the separation insulation film between the gate electrode and the first electrode and connected with the first electrode. The field plate is larger than the gate electrode in a current direction.