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    Saw filter manufacturing method and saw filter
    2.
    发明授权
    Saw filter manufacturing method and saw filter 有权

    公开(公告)号：US11088674B2

    公开(公告)日：2021-08-10

    申请号：US16840729

    申请日：2020-04-06

    Applicant: DISCO CORPORATION

    Inventor： Jun Abatake ,  Keiji Nomaru

    IPC: H03H9/02 ,  H03H9/64 ,  H01L41/332 ,  H01L41/33

    Abstract: There is provided a SAW filter manufacturing method for manufacturing a SAW filter from a piezoelectric substrate having planned dividing lines set on a top surface of the piezoelectric substrate, and having a device including comb-shaped electrodes in regions demarcated by the planned dividing lines. The method includes a structure forming step of forming a structure having projections and depressions on an undersurface side of the piezoelectric substrate by irradiating the piezoelectric substrate with a laser beam of a wavelength absorbable by the piezoelectric substrate from the undersurface side of the piezoelectric substrate, and a dividing step of dividing the piezoelectric substrate along the planned dividing lines after the structure forming step.

    METHOD OF MANUFACTURING SUBSTRATE FOR ACOUSTIC WAVE DEVICE
    3.
    发明申请
    METHOD OF MANUFACTURING SUBSTRATE FOR ACOUSTIC WAVE DEVICE 审中-公开

    公开(公告)号：US20190044494A1

    公开(公告)日：2019-02-07

    申请号：US16042097

    申请日：2018-07-23

    Applicant: DISCO CORPORATION

    Inventor： Jun Abatake ,  Kenya Kai ,  Kentaro Shiraga ,  Keiji Nomaru

    IPC: H03H9/02 ,  H01L41/337 ,  G01B11/06 ,  B23K26/57

    Abstract: A method of manufacturing a substrate for an acoustic wave device includes: a substrate joining step of joining a piezoelectric material layer to a surface on one side of a support substrate; a grinding step of grinding the piezoelectric material layer; a removal amount map forming step of measuring in-plane thickness of the piezoelectric material layer by an optical thickness meter, and calculating a removal amount for the piezoelectric material layer for adjusting thickness variability of the piezoelectric material layer to or below a threshold on the basis of each coordinate in the plane, to form a removal amount map; a laser processing step of applying a pulsed laser beam of such a wavelength as to be absorbed in the piezoelectric material layer, to selectively remove the piezoelectric material layer, based on the removal amount map; and a polishing step of polishing the surface of the piezoelectric material layer.

    BAW DEVICE AND METHOD OF MANUFACTURING BAW DEVICE
    6.
    发明申请
    BAW DEVICE AND METHOD OF MANUFACTURING BAW DEVICE 审中-公开
    BAW装置和制造装置的方法

    公开(公告)号：US20170063334A1

    公开(公告)日：2017-03-02

    申请号：US15238323

    申请日：2016-08-16

    Applicant: DISCO CORPORATION

    Inventor： Jun Abatake

    IPC: H03H9/54 ,  H03H3/02

    CPC classification number: H03H9/02047 ,  H03H3/02 ,  H03H9/0211 ,  H03H9/0504 ,  H03H9/09 ,  H03H9/54

    Abstract: A BAW device includes a substrate and a piezoelectric element formed on a surface of the substrate. The substrate has a plurality of elastic wave diffusing regions disposed therein for diffusing an elastic wave, the elastic wave diffusing regions being formed by modifying the inside of the substrate with a laser beam.

    Abstract translation: BAW装置包括形成在基板的表面上的基板和压电元件。 基板具有多个布置在其中的用于扩散弹性波的弹性波扩散区域，弹性波扩散区域通过用激光束修改基板的内部而形成。

    SAW DEVICE MANUFACTURING METHOD
    7.
    发明申请
    SAW DEVICE MANUFACTURING METHOD 审中-公开
    SAW器件制造方法

    公开(公告)号：US20160380605A1

    公开(公告)日：2016-12-29

    申请号：US15188418

    申请日：2016-06-21

    Applicant: DISCO CORPORATION

    Inventor： Hirokazu Matsumoto ,  Jun Abatake

    IPC: H03H3/08 ,  B23K26/53 ,  H03H9/145 ,  B23K26/402 ,  B23K26/06 ,  B23K26/00 ,  B23K26/364

    CPC classification number: H03H3/08 ,  B23K26/0006 ,  B23K26/0622 ,  B23K26/0853 ,  B23K26/364 ,  B23K26/402 ,  B23K26/53 ,  B23K2101/40 ,  B23K2103/42 ,  B23K2103/50 ,  B23K2103/54 ,  B23K2103/56

    Abstract: A SAW device wafer has a crystal substrate having a front side partitioned into a plurality of regions by a plurality of crossing division lines, a pair of comblike electrodes formed in each region defined on the front side of the crystal substrate by the division lines, and a cover layer formed of resin for covering the whole of the front side of the crystal substrate. The SAW device is manufactured by forming a laser processed groove on the cover layer along each division line, the laser processed groove having a depth not reaching the crystal substrate, forming a modified layer inside the crystal substrate along each division line, and applying an external force to the SAW device wafer, thereby dividing the SAW device wafer along each division line to obtain the plural SAW devices.

    Abstract translation: SAW器件晶片具有通过多个交叉分割线将前侧分隔成多个区域的晶体基板，通过划分线形成在形成在晶体基板的前侧的每个区域中的一对梳状电极，以及 由树脂形成的覆盖层，用于覆盖晶体基板的整个前侧。 SAW器件通过沿着分割线在覆盖层上形成激光加工槽而形成，激光加工槽的深度未到达晶体基板，沿着分割线在晶体基板的内部形成改性层，并施加外部 施加到SAW器件晶片，从而沿着每个分割线分割SAW器件晶片，以获得多个SAW器件。

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