公开(公告)号：US11610816B2

公开(公告)日：2023-03-21

申请号：US17171138

申请日：2021-02-09

申请人： DISCO CORPORATION

发明人： Yuki Ikku ,  Shuichiro Tsukiji ,  Satoshi Kobayashi

IPC分类号： H01L21/78 ,  H01L21/268 ,  B23K26/00 ,  B23K26/0622 ,  B23K26/53 ,  B23K26/03 ,  B23K101/40

摘要： A processing method of a wafer in which a modified layer is formed inside the wafer. In the processing method, irradiation with a first laser beam is executed from a back surface side of the wafer and the modified layer is formed inside the wafer. Then, irradiation with a second laser beam is executed with the focal point thereof positioned to the inside or the front surface of the wafer and reflected light is imaged by an imaging unit. Furthermore, a processing state of the wafer is determined on the basis of a taken image. The second laser beam is shaped in such a manner that a sectional shape thereof in a surface perpendicular to a traveling direction thereof becomes asymmetric across the modified layer.

公开(公告)号：US10557704B2

公开(公告)日：2020-02-11

申请号：US16265353

申请日：2019-02-01

申请人： DISCO CORPORATION

发明人： Shuichiro Tsukiji ,  Yuki Ikku ,  Keiji Nomaru ,  Satoshi Kobayashi

IPC分类号： G01B11/22

摘要： A non-destructive detection method includes, after carrying out a preparation step of preparing an inspection apparatus, an image acquisition step of intermittently moving an objective lens by a predetermined distance in a Z-axis direction orthogonal to an X-Y plane to be made closer to a first surface, positioning a focal point to a Z-axis coordinate value where a distance of the focal point extends by a refractive index of a workpiece, acquiring an X-Y plane image of an inside of the workpiece for each of a plurality of Z-axis coordinate values, and then, recording the acquired images in a recording unit, and a modified layer detecting step of detecting a state of a modified layer from the X-Y plane image for each of the plurality of Z-axis coordinate values recorded in the recording unit.

公开(公告)号：US11417570B2

公开(公告)日：2022-08-16

申请号：US17172325

申请日：2021-02-10

申请人： DISCO CORPORATION

发明人： Shunsuke Teranishi ,  Shuichiro Tsukiji ,  Yuki Ikku

IPC分类号： H01L21/78 ,  H01L21/268 ,  H01L23/544 ,  H01L21/66

摘要： A wafer processing method for forming a modified layer within a wafer along planned dividing lines forms the modified layer within the wafer, positions a condensing point within the wafer or at the top surface of the wafer and applies a second laser beam while moving the condensing point in a thickness direction of the wafer, images reflected light, and determines the processed state of the wafer on the basis of a photographed image. The second laser beam is formed such that the sectional shape of the second laser beam in a plane perpendicular to the traveling direction of the second laser beam is asymmetric with respect to the modified layer.

公开(公告)号：US11935863B2

公开(公告)日：2024-03-19

申请号：US17123318

申请日：2020-12-16

申请人： DISCO CORPORATION

发明人： Satoshi Kobayashi ,  Youngsuk Kim ,  Nobuyuki Kimura ,  Yuki Ikku ,  Zhiwen Chen

IPC分类号： H01L23/00 ,  B23K1/00 ,  B23K1/005 ,  B23K3/08 ,  B23K26/03 ,  B23K26/06 ,  B23K101/40 ,  G02B19/00 ,  G02B27/30

CPC分类号： H01L24/75 ,  B23K1/0016 ,  B23K1/0056 ,  B23K3/08 ,  B23K26/034 ,  B23K26/0608 ,  B23K26/0648 ,  B23K26/0665 ,  G02B19/0009 ,  G02B19/0047 ,  H01L24/81 ,  B23K2101/40 ,  G02B27/30 ,  H01L2224/75253 ,  H01L2224/75263 ,  H01L2224/7555 ,  H01L2224/81224 ,  H01L2224/81815 ,  H01L2924/3511

摘要： A laser reflow apparatus reflows solder bumps disposed on a side of a semiconductor chip in a workpiece and included in an irradiation range on the workpiece by applying a laser beam to an opposite side of the semiconductor chip. The laser reflow apparatus includes a spatial beam modulation unit including a laser power density setting function to locally set the laser power density in the irradiation range of a laser beam emitted from a laser beam source, and an image focusing unit including an image focusing function to focus the laser beam emitted from the laser beam source and apply the focused laser beam to the irradiation range on the workpiece.

公开(公告)号：US11456260B2

公开(公告)日：2022-09-27

申请号：US17171213

申请日：2021-02-09

申请人： DISCO CORPORATION

发明人： Shunsuke Teranishi ,  Shigefumi Okada ,  Shuichiro Tsukiji ,  Yuki Ikku

IPC分类号： H01L21/78 ,  H01L21/66 ,  H01L23/544 ,  H01L21/268

摘要： A wafer processing method for forming a modified layer within a wafer along planned dividing lines forms the modified layer within the wafer, positions a condensing point within the wafer or at a top surface of the wafer and applies a second laser beam while moving the condensing point, images reflected light, and determines a processed state of the wafer on the basis of an imaged image. The second laser beam is formed such that a sectional shape of the second laser beam in a plane perpendicular to a traveling direction of the second laser beam is not axisymmetric with respect to an axis along the planned dividing lines.