公开(公告)号：US20220139704A1

公开(公告)日：2022-05-05

申请号：US17572509

申请日：2022-01-10

申请人： DNF CO., LTD.

发明人： Sung Gi KIM ,  Jeong Joo PARK ,  Joong Jin PARK ,  Se Jin JANG ,  Byeong-il YANG ,  Sang-Do LEE ,  Sam Dong LEE ,  Sang Ick LEE ,  Myong Woon KIM

IPC分类号： H01L21/02 ,  C23C16/32 ,  C01B33/18 ,  C01B21/068 ,  C07F7/10 ,  C23C16/455 ,  C23C16/50 ,  C23C16/40 ,  C23C16/34 ,  C23C16/30 ,  C23C16/36 ,  C09D1/00

摘要： Provided are a composition for depositing a silicon-containing thin film containing a bis(aminosilyl)alkylamine compound and a method for manufacturing a silicon-containing thin film using the same, and more particularly, a composition for depositing a silicon-containing thin film, containing the bis(aminosilyl)alkylamine compound capable of being usefully used as a precursor of the silicon-containing thin film, and a method for manufacturing a silicon-containing thin film using the same.

公开(公告)号：US20220181578A1

公开(公告)日：2022-06-09

申请号：US17435350

申请日：2020-03-06

申请人： DNF CO., LTD

发明人： Myoung Woon KIM ,  Sang Ick LEE ,  Se Jin JANG ,  Sung Gi KIM ,  Jeong Joo PARK ,  Won Mook CHAE ,  A Ra CHO ,  Byeong il YANG ,  Joong Jin PARK ,  Gun Joo PARK ,  Sam Dong LEE ,  Haeng don LIM ,  Sang Yong JEON

IPC分类号： H01L51/52 ,  C23C16/455 ,  C23C16/40 ,  H01L51/56 ,  C23C16/56

摘要： The present invention relates to a silicon oxide encapsulation film comprising a metal or a metal oxide, and a manufacturing method therefor. The silicon metal oxide encapsulation film according to the present invention has a high thin film growth rate and low moisture and oxygen permeabilities, thereby exhibiting a very excellent sealing effect even at a low thickness, and the stress strength and refractive index thereof can be controlled, thereby enabling a high-quality silicon metal oxide encapsulation film that is applicable to a flexible display to be readily manufactured.

公开(公告)号：US20210147451A1

公开(公告)日：2021-05-20

申请号：US16606168

申请日：2018-04-19

申请人： DNF CO., LTD

发明人： Sung Gi KIM ,  Se Jin JANG ,  Byeong-il YANG ,  Joong Jin PARK ,  Sang-Do LEE ,  Jeong Joo PARK ,  Sam Dong LEE ,  Gun-Joo PARK ,  Sang Ick LEE ,  Myong Woon KIM

IPC分类号： C07F7/10 ,  C23C16/40 ,  C23C16/455 ,  C23C16/50

摘要： Provided are a novel disilylamine compound, a method for preparing same, and a composition for depositing a silicon-containing thin film including the same. A disilylamine compound of the present invention has excellent reactivity, is thermally stable, and has high volatility, and thus, is used as a silicon-containing precursor, thereby manufacturing a high-quality silicon-containing thin film.

公开(公告)号：US20230089296A1

公开(公告)日：2023-03-23

申请号：US17653217

申请日：2022-03-02

申请人： DNF CO., LTD.

发明人： Sung Gi KIM ,  Jeong Joo PARK ,  Joong Jin PARK ,  Se Jin JANG ,  Byeong-il YANG ,  Sang-Do LEE ,  Sam Dong LEE ,  Sang Ick LEE ,  Myong Woon KIM

IPC分类号： H01L21/02 ,  C01B33/12 ,  C01B21/068 ,  C07F7/10 ,  C23C16/50 ,  C23C16/455 ,  C23C16/40 ,  C23C16/34

摘要： Provided is a composition containing a silylamine compound and a method for manufacturing a silicon-containing thin film using the same, and more particularly, a composition for depositing a silicon-containing thin film, containing a silylamine compound capable of forming a silicon-containing thin film having a significantly excellent water vapor transmission rate to thereby be usefully used as a precursor of the silicon-containing thin film and an encapsulant of a display, and a method for manufacturing a silicon-containing thin film using the same.

公开(公告)号：US20210222294A1

公开(公告)日：2021-07-22

申请号：US16093905

申请日：2018-04-26

申请人： DNF CO., LTD.

发明人： Myong Woon KIM ,  Sang Ick LEE ,  Sang Jun YIM ,  Won Mook CHAE ,  Jeong Hyeon PARK ,  Kang Yong LEE ,  A Ra CHO ,  Joong Jin PARK ,  Heang Don LIM

IPC分类号： C23C16/34 ,  C07F7/28 ,  C07F7/00 ,  C07F11/00 ,  C07F9/00 ,  C07F5/00 ,  C23C16/04 ,  C23C16/40 ,  C23C16/455 ,  C23C16/50

摘要： Provided are a novel metal triamine compound, a method for preparing the same, a composition for depositing a metal-containing thin film including the same, and a method for preparing a metal-containing thin film using the same. The metal triamine compound of the present invention has excellent reactivity, is thermally stable, has high volatility, and has high storage stability, and thus, it may be used as a metal-containing precursor to easily prepare a high-purity metal-containing thin film having high density.

公开(公告)号：US20190249296A1

公开(公告)日：2019-08-15

申请号：US16319452

申请日：2017-07-19

申请人： DNF CO., LTD.

发明人： Se Jin JANG ,  Sang-Do LEE ,  Joong Jin PARK ,  Sung Gi KIM ,  Byeong-il YANG ,  Gun-Joo PARK ,  Jeong Joo PARK ,  Jang Hyeon SEOK ,  Sang Ick LEE ,  Myong Woon KIM

IPC分类号： C23C16/34 ,  C23C16/455 ,  H01L21/02

CPC分类号： C23C16/345 ,  C07F7/025 ,  C07F7/10 ,  C07F7/21 ,  C23C16/45536 ,  C23C16/45553 ,  H01L21/0217 ,  H01L21/02274 ,  H01L21/0228

摘要： The present invention relates to a method for manufacturing a high-purity silicon nitride thin film using plasma atomic layer deposition. More specifically, the present invention can realize improved thin film efficiency and a step coverage by performing a two-stage plasma excitation step and can provide a high-purity silicon nitride thin film with an improved deposition rate despite a low film-forming temperature.