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1.发明申请ETCHANT, METHOD OF MANUFACTURING METAL WIRING AND THIN FILM TRANSISTOR SUBSTRATE USING THE ETCHANT 有权蚀刻剂，使用蚀刻剂制造金属接线和薄膜晶体管基板的方法公开(公告)号：US20150004758A1
公开(公告)日：2015-01-01
申请号：US14100124
申请日：2013-12-09
发明人： Jong-Hyun Choung , In-Bae Kim , Jae-Woo Jeong , Hong-Sick Park , In-Seol Kuk , Gi-Yong Nam , Young-Chul Park , In-Ho Yu , Young-Jin Yoon , Suck-Jun Lee
IPC分类号： H01L21/306 , H01L29/66 , C09K13/08
CPC分类号： H01L29/66742 , C09K13/08 , C23F1/02 , C23F1/18 , C23F1/26 , H01L21/32134 , H01L27/3276 , H01L29/458 , H01L29/4908
摘要： An etchant composition includes about 0.5 weight % to about 20 weight % of persulfate, about 0.01 weight % to about 2 weight % of a fluoride compound, about 1 weight % to about 10 weight % of an inorganic acid, about 0.5 weight % to about 5 weight % of a cyclic amine compound, about 0.1 weight % to about 10.0 weight % of a compound having an amino group and a sulfonic acid, about 0.1 weight % to about 15.0 weight % of an organic acid or a salt thereof, and water to 100 weight % of the etchant composition.
摘要翻译： 蚀刻剂组合物包括约0.5重量％至约20重量％的过硫酸盐，约0.01重量％至约2重量％的氟化物，约1重量％至约10重量％的无机酸，约0.5重量％至约 5重量％的环胺化合物，约0.1重量％至约10.0重量％的具有氨基和磺酸的化合物，约0.1重量％至约15.0重量％的有机酸或其盐，和水 至100重量％的蚀刻剂组成。
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公开(公告)号：US09347125B2
公开(公告)日：2016-05-24
申请号：US14725849
申请日：2015-05-29
发明人： In-Bae Kim , Jong-Hyun Choung , Seon-Il Kim , Hong-Sick Park , Wang Woo Lee , Jae-Woo Jeong , In Seol Kuk , Sang-Tae Kim , Young-Chul Park , Keyong Bo Shim , In-Ho Yu , Young-Jin Yoon , Suck-Jun Lee , Joon-Woo Lee , Sang-Hoon Jang , Young-Jun Jin
IPC分类号： C23F1/18 , C22F1/18 , H01L21/28 , C23F1/26 , H01L27/12 , H01L21/3213 , C09K13/00 , C09K13/04 , C09K13/06 , C09K13/08 , C23F1/14 , C23F1/44 , H01L21/32 , H05K3/06
CPC分类号： C22F1/18 , C09K13/00 , C09K13/04 , C09K13/06 , C09K13/08 , C23F1/14 , C23F1/18 , C23F1/26 , C23F1/44 , H01L21/28008 , H01L21/32 , H01L21/32134 , H01L27/124 , H01L27/1288 , H05K3/067
摘要： A etchant composition that includes, based on a total weight of the etchant composition, about 0.5 wt % to about 20 wt % of a persulfate, about 0.5 wt % to about 0.9 wt % of an ammonium fluoride, about 1 wt % to about 10 wt % of an inorganic acid, about 0.5 wt % to about 5 wt % of a cyclic amine compound, about 0.1 wt % to about 10.0 wt % of a sulfonic acid, about 5 wt % to about 10 wt % of an organic acid or a salt thereof, and a remainder of water. The etchant composition may be configured to etch a metal layer including copper and titanium, to form a metal wire that may be included in a thin film transistor array panel of a display device.
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公开(公告)号：US20230140373A1
公开(公告)日：2023-05-04
申请号：US17980258
申请日：2022-11-03
发明人： Seung-June Park , Jong-Min Kim , Joon-Ha Park , Gyeong-Min Seok , Jae-Woo Jeong
IPC分类号： C03C17/00
摘要： The present disclosure relates to an ultrathin glass comprising a coating layer, wherein the coating layer comprises a top surface coating layer formed on the top surface of the ultrathin glass and a side surface coating layer that is connected to the top surface coating layer and covers the side surface of the ultrathin glass, and a method for preparing the same.
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4.发明授权Etchant composition and method of manufacturing metal wiring and thin film transistor substrate using the etchant 有权使用蚀刻剂制造金属布线和薄膜晶体管基板的蚀刻剂组成和方法公开(公告)号：US09293565B2
公开(公告)日：2016-03-22
申请号：US14100124
申请日：2013-12-09
发明人： Jong-Hyun Choung , In-Bae Kim , Jae-Woo Jeong , Hong-Sick Park , In-Seol Kuk , Gi-Yong Nam , Young-Chul Park , In-Ho Yu , Young-Jin Yoon , Suck-Jun Lee
IPC分类号： H01L29/66 , C09K13/08 , H01L21/3213 , C23F1/02 , C23F1/18 , C23F1/26 , H01L29/45 , H01L29/49 , H01L27/32
CPC分类号： H01L29/66742 , C09K13/08 , C23F1/02 , C23F1/18 , C23F1/26 , H01L21/32134 , H01L27/3276 , H01L29/458 , H01L29/4908
摘要： An etchant composition includes about 0.5 weight % to about 20 weight % of persulfate, about 0.01 weight % to about 2 weight % of a fluoride compound, about 1 weight % to about 10 weight % of an inorganic acid, about 0.5 weight % to about 5 weight % of a cyclic amine compound, about 0.1 weight % to about 10.0 weight % of a compound having an amino group and a sulfonic acid, about 0.1 weight % to about 15.0 weight % of an organic acid or a salt thereof, and water to 100 weight % of the etchant composition.
摘要翻译： 蚀刻剂组合物包括约0.5重量％至约20重量％的过硫酸盐，约0.01重量％至约2重量％的氟化物，约1重量％至约10重量％的无机酸，约0.5重量％至约 5重量％的环胺化合物，约0.1重量％至约10.0重量％的具有氨基和磺酸的化合物，约0.1重量％至约15.0重量％的有机酸或其盐，和水 至100重量％的蚀刻剂组成。
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5.发明授权Etchant composition and method of forming metal wire and thin film transistor array panel using the same 有权蚀刻剂组成和形成金属线和薄膜晶体管阵列面板的方法使用相同公开(公告)号：US09045833B2
公开(公告)日：2015-06-02
申请号：US13718557
申请日：2012-12-18
发明人： In-Bae Kim , Jong-Hyun Choung , Seon-Il Kim , Hong-Sick Park , Wang Woo Lee , Jae-Woo Jeong , In Seol Kuk , Sang-Tae Kim , Young-Chul Park , Keyong Bo Shim , In-Ho Yu , Young-Jin Yoon , Suck-Jun Lee , Joon-Woo Lee , Sang-Hoon Jang , Young-Jun Jin
CPC分类号： C22F1/18 , C09K13/00 , C09K13/04 , C09K13/06 , C09K13/08 , C23F1/14 , C23F1/18 , C23F1/26 , C23F1/44 , H01L21/28008 , H01L21/32 , H01L21/32134 , H01L27/124 , H01L27/1288 , H05K3/067
摘要： A etchant composition that includes, based on a total weight of the etchant composition, about 0.5 wt % to about 20 wt % of a persulfate, about 0.5 wt % to about 0.9 wt % of an ammonium fluoride, about 1 wt % to about 10 wt % of an inorganic acid, about 0.5 wt % to about 5 wt % of a cyclic amine compound, about 0.1 wt % to about 10.0 wt % of a sulfonic acid, about 5 wt % to about 10 wt % of an organic acid or a salt thereof, and a remainder of water. The etchant composition may be configured to etch a metal layer including copper and titanium, to form a metal wire that may be included in a thin film transistor array panel of a display device.
摘要翻译： 一种蚀刻剂组合物，其包含基于蚀刻剂组合物的总重量为约0.5重量％至约20重量％的过硫酸盐，约0.5重量％至约0.9重量％的氟化铵，约1重量％至约10重量％ 无机酸的重量百分比，约0.5重量％至约5重量％的环胺化合物，约0.1重量％至约10.0重量％的磺酸，约5重量％至约10重量％的有机酸，或 其盐，剩余的水。 蚀刻剂组合物可以被配置为蚀刻包括铜和钛的金属层，以形成可以包括在显示装置的薄膜晶体管阵列面板中的金属线。
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