公开(公告)号：US08152598B2

公开(公告)日：2012-04-10

申请号：US12266069

申请日：2008-11-06

申请人： Dai Fukushima ,  Atsushi Shigeta

发明人： Dai Fukushima ,  Atsushi Shigeta

IPC分类号： B24B41/00

CPC分类号： B24B9/065 ,  B24B21/002

摘要： A substrate treating method includes rotating a substrate in a circumferential direction and polishing a peripheral portion of the substrate by pressing a polishing member to it using a pressing mechanism having a pressing pad. An angle of at least a part of the pressing pad with respect to an axial direction, in which the pressing mechanism makes the pressing pad press the peripheral portion of the substrate, is changed by an angle displacement mechanism which actively displaces the angle so that the polishing is performed depending on a surface to be polished in the peripheral portion.

摘要翻译： 基板处理方法包括：使用具有按压垫的按压机构，将基板沿周向旋转并且对基板的周边部分进行冲压研磨部件。 按压垫的至少一部分相对于轴向的角度，其中按压机构使按压垫按压基板的周边部分，由角度位移机构改变，该角度位移机构主动地移动角度，使得 根据周边部分中要抛光的表面进行抛光。

公开(公告)号：US20080113590A1

公开(公告)日：2008-05-15

申请号：US11984057

申请日：2007-11-13

申请人： Takeo Kubota ,  Atsushi Shigeta ,  Dai Fukushima

发明人： Takeo Kubota ,  Atsushi Shigeta ,  Dai Fukushima

IPC分类号： B24B7/04 ,  B24B41/06

CPC分类号： B24B9/065

摘要： A polishing method for a semiconductor wafer having a polishing target surface at a periphery portion thereof is disclosed. The method includes pressing a polishing member against the polishing target surface along a circumference of the semiconductor wafer by a plurality of pressing portions while rotating the semiconductor wafer in a circumferential direction, thereby polishing the polishing target surface of the semiconductor wafer.

摘要翻译： 公开了一种在其周边部分具有抛光对象表面的半导体晶片的抛光方法。 该方法包括：在半导体晶片沿圆周方向旋转的同时，通过多个按压部沿着半导体晶片的圆周将抛光构件压靠在抛光对象表面上，从而研磨半导体晶片的抛光对象表面。

公开(公告)号：US08506362B2

公开(公告)日：2013-08-13

申请号：US12667891

申请日：2008-07-08

申请人： Dai Fukushima ,  Atsushi Shigeta ,  Tamami Takahashi ,  Kenya Ito ,  Masaya Seki ,  Hiroaki Kusa

发明人： Dai Fukushima ,  Atsushi Shigeta ,  Tamami Takahashi ,  Kenya Ito ,  Masaya Seki ,  Hiroaki Kusa

IPC分类号： B24B7/26

CPC分类号： B24B21/002 ,  B24B9/065 ,  H01L21/02021

摘要： A polishing apparatus includes a substrate holder configured to hold and rotate a substrate, a press pad configured to press a polishing tape having a polishing surface against a bevel portion of the substrate held by the substrate holder, and a feeding mechanism configured to cause the polishing tape to travel in its longitudinal direction. The press pad includes a hard member having a pressing surface for pressing the bevel portion of the substrate through the polishing tape, and at least one elastic member for pressing the hard member against the bevel portion of the substrate through the belt-shaped polishing tool.

摘要翻译： 抛光装置包括：基板保持器，其构造成保持和旋转基板;压垫，其构造成将具有抛光表面的抛光带压靠在由基板保持器保持的基板的斜面部分上;以及馈送机构，其构造成使抛光 胶带沿其纵向行进。 压垫包括具有用于通过研磨带挤压基板的斜面部分的按压表面的硬质部件和用于通过带状抛光工具将硬质部件压靠在基板的斜面部分上的至少一个弹性部件。

公开(公告)号：US20110003537A1

公开(公告)日：2011-01-06

申请号：US12667891

申请日：2008-07-08

申请人： Dai Fukushima ,  Atsushi Shigeta ,  Tamami Takahashi ,  Kenya Ito ,  Masaya Seki ,  Hiroaki Kusa

发明人： Dai Fukushima ,  Atsushi Shigeta ,  Tamami Takahashi ,  Kenya Ito ,  Masaya Seki ,  Hiroaki Kusa

IPC分类号： B24B21/16 ,  B24B21/22

CPC分类号： B24B21/002 ,  B24B9/065 ,  H01L21/02021

摘要： A polishing apparatus according to the present invention includes a substrate holder (32) configured to hold and rotate a substrate (W), a press pad (50) configured to press a polishing tape (41) having a polishing surface against a bevel portion of the substrate held by the substrate holder, and a feeding mechanism (45) configured to cause the polishing tape to travel in its longitudinal direction. The press pad (50) includes a hard member (51) having a pressing surface (51a) for pressing the bevel portion of the substrate through the polishing tape, and at least one elastic member (53) for pressing the hard member against the bevel portion of the substrate through the belt-shaped polishing tool.

摘要翻译： 根据本发明的抛光装置包括：衬底保持器（32），其被构造成保持和旋转衬底（W），压垫（50）被构造成将具有抛光表面的抛光带（41）压靠在衬底 由基板保持器保持的基板和构造成使研磨带沿其纵向方向行进的进给机构（45）。 压垫（50）包括具有用于通过研磨带挤压基板的斜面部分的按压表面（51a）的硬质构件（51）和用于将硬构件压靠在斜面上的至少一个弹性构件（53） 通过带状抛光工具的基底部分。

公开(公告)号：US20080254719A1

公开(公告)日：2008-10-16

申请号：US12100450

申请日：2008-04-10

申请人： Atsushi SHIGETA ,  Dai Fukushima ,  Hiroyuki Yano

发明人： Atsushi SHIGETA ,  Dai Fukushima ,  Hiroyuki Yano

IPC分类号： B24B1/00

CPC分类号： B24B9/065 ,  B24B21/002

摘要： In a substrate processing method of polishing a periphery of a substrate, in a state where a first polishing surface to which abrasive grains that include particles having a chemical effect on an oxide-silicon-series or nitride-silicon-series film as a main component have been fixed is brought into contact with the periphery of a semiconductor substrate, polishing the periphery of the substrate by sliding the substrate and the first polishing surface. Moreover, in a state where a second polishing surface to which abrasive grains mainly having a mechanical effect have been fixed is brought into contact with the periphery of the substrate, polishing the periphery of the substrate by sliding the substrate and the second polishing surface.

摘要翻译： 在对基板的周边进行研磨的基板处理方法中，在将包含对氧化物硅系或氮系硅系列膜具有化学作用的粒子的磨粒作为主要成分的第一研磨面进行研磨的状态下， 已经被固定的部分与半导体衬底的周边接触，通过滑动衬底和第一抛光表面来抛光衬底的周边。 此外，在固定有主要具有机械作用的磨粒的第二研磨面与基板的周边接触的状态下，通过滑动基板和第二研磨面来研磨基板的周围。

公开(公告)号：US08778802B2

公开(公告)日：2014-07-15

申请号：US11802532

申请日：2007-05-23

申请人： Dai Fukushima ,  Gaku Minamihaba ,  Hiroyuki Yano

发明人： Dai Fukushima ,  Gaku Minamihaba ,  Hiroyuki Yano

IPC分类号： C03C15/00 ,  C03C25/68 ,  H01L21/302 ,  H01L21/461

CPC分类号： H01L21/3212 ,  B24B37/04 ,  B24B57/02 ,  H01L21/02074 ,  H01L21/31053

摘要： A polishing method includes causing a polishing pad arranged on a turn table to rotate together with the turn table, and polishing a surface of a substrate by using the rotating polishing pad while supplying a chemical fluid to a surface of the polishing pad on a fore side of the substrate from an oblique direction with respect to the surface of the polishing pad.

摘要翻译： 抛光方法包括：使设置在转台上的抛光垫与转台一起旋转，并且通过使用旋转的抛光垫来抛光衬底的表面，同时在前侧向抛光垫的表面提供化学流体 的相对于抛光垫的表面的倾斜方向。

公开(公告)号：US20110062374A1

公开(公告)日：2011-03-17

申请号：US12926358

申请日：2010-11-12

申请人： Gaku Minamihaba ,  Dai Fukushima ,  Nobuyuki Kurashima ,  Susumu Yamamoto ,  Hiroyuki Yano

发明人： Gaku Minamihaba ,  Dai Fukushima ,  Nobuyuki Kurashima ,  Susumu Yamamoto ,  Hiroyuki Yano

IPC分类号： C09K13/00

CPC分类号： C09K3/1463 ,  C09G1/02 ,  H01L21/3212 ,  H01L22/26

摘要： A CMP slurry for metallic film is provided, which includes water, 0.01 to 0.3 wt %, based on a total quantity of the slurry, of polyvinylpyrrolidone having a weight average molecular weight of not less than 20,000, an oxidizing agent, a protective film-forming agent containing a first complexing agent for forming a water-insoluble complex and a second complexing agent for forming a water-soluble complex, and colloidal silica having a primary particle diameter ranging from 5 to 50 nm.

摘要翻译： 提供了一种用于金属膜的CMP浆料，其包括基于浆料总量为0.01至0.3重量％的重均分子量不小于20,000的聚乙烯吡咯烷酮，氧化剂，保护膜 - 含有形成水不溶性络合物的第一络合剂和形成水溶性络合物的第二络合剂的成膜剂，以及一次粒径为5〜50nm的胶体二氧化硅。

公开(公告)号：US07465668B2

公开(公告)日：2008-12-16

申请号：US11296483

申请日：2005-12-08

申请人： Dai Fukushima ,  Gaku Minamihaba ,  Hiroyuki Yano

发明人： Dai Fukushima ,  Gaku Minamihaba ,  Hiroyuki Yano

IPC分类号： H01L21/302

CPC分类号： B24B37/042 ,  H01L21/3212 ,  H01L21/7684

摘要： A method for manufacturing a semiconductor device is provided, which includes depositing a conductive film above an insulating film formed above a semiconductor substrate and having a recess, thereby forming a treating film, polishing the treating film while feeding a first chemical solution containing abrasive particles and a second chemical solution containing an oxidizing agent over a polishing pad, the treating film being contacted with the polishing pad at a first load, and subsequent to the polishing, subjecting a surface of the treating film to a chemical-polishing by continuing the feeding of the first chemical solution over the polishing pad while suspending the feeding of the second chemical solution, the treating film being contacted with the polishing pad at a second load which is smaller than the first load.

摘要翻译： 提供了一种制造半导体器件的方法，其包括在半导体衬底上形成的绝缘膜上方形成导电膜并具有凹陷，从而形成处理膜，同时在加入含有磨料颗粒的第一化学溶液的同时抛光处理膜， 在抛光垫上含有氧化剂的第二化学溶液，所述处理膜在第一次负载下与抛光垫接触，并且在抛光之后，通过继续进行抛光来对处理膜的表面进行化学抛光 在悬浮第二化学溶液的进料的同时在抛光垫上方的第一化学溶液，处理膜以小于第一载荷的第二载荷与抛光垫接触。

公开(公告)号：US07307023B2

公开(公告)日：2007-12-11

申请号：US11540707

申请日：2006-10-02

申请人： Dai Fukushima ,  Gaku Minamihaba ,  Hiroyuki Yano ,  Susumu Yamamoto

发明人： Dai Fukushima ,  Gaku Minamihaba ,  Hiroyuki Yano ,  Susumu Yamamoto

IPC分类号： H01L21/302

CPC分类号： H01L21/3212 ,  B24B37/015 ,  B24B49/16 ,  B24B57/02 ,  C09G1/02

摘要： A method for polishing a Cu film comprises contacting a Cu film formed above a semiconductor substrate with a polishing pad attached to a turntable, and supplying a first chemical liquid which promotes the polishing of the Cu film and a second chemical liquid which contains a surfactant, to the polishing pad while the turntable being rotated, thereby polishing the Cu film, while monitoring at least one of a table current of the turntable and a surface temperature of the polishing pad to detect a change in at least one of the table current of the turntable and the surface temperature of the polishing pad. The supply of the second chemical liquid is controlled in conformity with the change.

公开(公告)号：US20060175296A1

公开(公告)日：2006-08-10

申请号：US11296483

申请日：2005-12-08

申请人： Dai Fukushima ,  Gaku Minamihaba ,  Hiroyuki Yano

发明人： Dai Fukushima ,  Gaku Minamihaba ,  Hiroyuki Yano

IPC分类号： C03C15/00 ,  B44C1/22 ,  H01L21/302 ,  C23F1/00

CPC分类号： B24B37/042 ,  H01L21/3212 ,  H01L21/7684

摘要： A method for manufacturing a semiconductor device is provided, which includes depositing a conductive film above an insulating film formed above a semiconductor substrate and having a recess, thereby forming a treating film, polishing the treating film while feeding a first chemical solution containing abrasive particles and a second chemical solution containing an oxidizing agent over a polishing pad, the treating film being contacted with the polishing pad at a first load, and subsequent to the polishing, subjecting a surface of the treating film to a chemical-polishing by continuing the feeding of the first chemical solution over the polishing pad while suspending the feeding of the second chemical solution, the treating film being contacted with the polishing pad at a second load which is smaller than the first load.

摘要翻译： 提供了一种制造半导体器件的方法，其包括在半导体衬底上形成的绝缘膜上方形成导电膜并具有凹陷，从而形成处理膜，同时在加入含有磨料颗粒的第一化学溶液的同时抛光处理膜， 在抛光垫上含有氧化剂的第二化学溶液，所述处理膜在第一次负载下与抛光垫接触，并且在抛光之后，通过继续进行抛光来对处理膜的表面进行化学抛光 在悬浮第二化学溶液的进料的同时在抛光垫上方的第一化学溶液，处理膜以小于第一载荷的第二载荷与抛光垫接触。