公开(公告)号：US20110130073A1

公开(公告)日：2011-06-02

申请号：US13002449

申请日：2009-06-30

申请人： Daisuke Furukawa ,  Kazumasa Asai ,  Takahiro Kida ,  Tadao Tanaka

发明人： Daisuke Furukawa ,  Kazumasa Asai ,  Takahiro Kida ,  Tadao Tanaka

IPC分类号： B24B49/12 ,  B24B37/04

CPC分类号： B24B37/013 ,  B24B37/042 ,  B24B37/08 ,  B24B49/04 ,  B24B49/12 ,  B24D7/12 ,  H01L21/02024 ,  H01L21/304 ,  H01L22/12 ,  H01L22/26 ,  H01L2924/0002 ,  H01L2924/00

摘要： The present invention is a wafer polishing method including simultaneously polishing both surfaces of a wafer by pressing and rubbing the wafer, while holding the wafer with: a lower turn table having a flat polishing-upper-surface rotationally driven; an upper turn table having a flat polishing-lower-surface rotationally driven, the upper turn table being arranged with facing to the lower turn table; and a carrier having a wafer-holding hole for holding the wafer, wherein the polishing is performed while measuring a thickness of the wafer through a plurality of openings provided between a rotation center and an edge of the upper turn table or the lower turn table, and switching a polishing slurry with a polishing slurry having a different polishing rate during the polishing of the wafer. As a result, there is provided a wafer polishing method that can manufacture a wafer having a high flatness and a high smoothness at high productivity and high yield.

摘要翻译： 本发明是一种晶片抛光方法，包括：通过按压和摩擦晶片同时抛光晶片的两个表面，同时用下面的转台来保持晶片：具有平坦的抛光上表面旋转驱动; 具有平面抛光下表面旋转驱动的上转台，所述上转台被布置成面向下转台; 以及具有用于保持晶片的晶片保持孔的载体，其中在通过设置在上转台或下转台的旋转中心和边缘之间的多个开口测量晶片的厚度的同时进行抛光， 以及在抛光晶片期间用抛光速率不同的抛光浆料切割抛光浆料。 结果，提供了可以以高生产率和高产率制造具有高平坦度和高平滑度的晶片的晶片抛光方法。

公开(公告)号：US08834230B2

公开(公告)日：2014-09-16

申请号：US13002449

申请日：2009-06-30

申请人： Daisuke Furukawa ,  Kazumasa Asai ,  Takahiro Kida ,  Tadao Tanaka

发明人： Daisuke Furukawa ,  Kazumasa Asai ,  Takahiro Kida ,  Tadao Tanaka

IPC分类号： B24B49/00 ,  B24B51/00 ,  H01L21/02 ,  B24B37/08 ,  B24D7/12 ,  H01L21/66 ,  B24B37/04 ,  B24B49/12

CPC分类号： B24B37/013 ,  B24B37/042 ,  B24B37/08 ,  B24B49/04 ,  B24B49/12 ,  B24D7/12 ,  H01L21/02024 ,  H01L21/304 ,  H01L22/12 ,  H01L22/26 ,  H01L2924/0002 ,  H01L2924/00

摘要： The present invention is a wafer polishing method including simultaneously polishing both surfaces of a wafer by pressing and rubbing the wafer, while holding the wafer with: a lower turn table having a flat polishing-upper-surface rotationally driven; an upper turn table having a flat polishing-lower-surface rotationally driven, the upper turn table being arranged with facing to the lower turn table; and a carrier having a wafer-holding hole for holding the wafer, wherein the polishing is performed while measuring a thickness of the wafer through a plurality of openings provided between a rotation center and an edge of the upper turn table or the lower turn table, and switching a polishing slurry with a polishing slurry having a different polishing rate during the polishing of the wafer. As a result, there is provided a wafer polishing method that can manufacture a wafer having a high flatness and a high smoothness at high productivity and high yield.

摘要翻译： 本发明是一种晶片抛光方法，包括：通过按压和摩擦晶片同时抛光晶片的两个表面，同时用下面的转台来保持晶片：具有平坦的抛光上表面旋转驱动; 具有平面抛光下表面旋转驱动的上转台，所述上转台被布置成面向下转台; 以及具有用于保持晶片的晶片保持孔的载体，其中在通过设置在上转台或下转台的旋转中心和边缘之间的多个开口测量晶片的厚度的同时进行抛光， 以及在抛光晶片期间用抛光速率不同的抛光浆料切割抛光浆料。 结果，提供了可以以高生产率和高产率制造具有高平坦度和高平滑度的晶片的晶片抛光方法。

公开(公告)号：US06764392B2

公开(公告)日：2004-07-20

申请号：US09913790

申请日：2001-08-16

申请人： Takashi Nihonmatsu ,  Takahiro Kida ,  Tadao Tanaka

发明人： Takashi Nihonmatsu ,  Takahiro Kida ,  Tadao Tanaka

IPC分类号： B24B2900

CPC分类号： B24B37/30 ,  B25B11/005 ,  H01L21/30625 ,  H01L21/6838

摘要： A polishing method and polishing apparatus capable of improving the flatness of a wafer are provided. When a wafer is adhered to a wafer holding plate for polishing a surface to be polished of the wafer by pressing and rubbing the surface to be polished against a polishing pad on a polishing turn table, the wafer is held by vacuum-chucking the surface to be polished of the wafer such that a surface to be adhered of the wafer forms a convex surface in a vicinity including an arbitrary point in the surface to be adhered within a region surrounding a center of the surface to be adhered of the wafer, and the region being at least not less than 50% of an entire adhesion area; and the wafer is adhered to the wafer holding plate from a central portion of the surface to be adhered of the wafer.

摘要翻译： 提供能够提高晶片的平坦度的抛光方法和抛光装置。 当将晶片粘附到用于抛光晶片表面的晶片保持板时，通过将抛光表面按照抛光表面抛光在研磨台上的抛光垫上，将晶片通过真空吸附表面来保持 对晶片进行抛光，使得晶片表面在包围待粘附表面的任意点附近的附近形成凸起表面，该区域围绕晶片的待粘附表面的中心，并且 至少不小于整个粘合面积的50％的区域; 并且晶片从晶片的待粘合表面的中心部分粘附到晶片保持板。

公开(公告)号：US20100326563A1

公开(公告)日：2010-12-30

申请号：US12803276

申请日：2010-06-23

申请人： Toshiya Kobayashi ,  Mitsuomi Narita ,  Tomohiko Sugimori ,  Tsunehiko Yokoi ,  Yukinobu Nishino ,  Masami Hayashi ,  Takashi Kadoya ,  Tokuo Nishi ,  Yukihiro Yamamoto ,  Takuya Onishi ,  Takahiro Kida ,  Kouichi Murata

发明人： Toshiya Kobayashi ,  Mitsuomi Narita ,  Tomohiko Sugimori ,  Tsunehiko Yokoi ,  Yukinobu Nishino ,  Masami Hayashi ,  Takashi Kadoya ,  Tokuo Nishi ,  Yukihiro Yamamoto ,  Takuya Onishi ,  Takahiro Kida ,  Kouichi Murata

IPC分类号： B65B3/04

CPC分类号： H05F1/00 ,  A61L2/087 ,  B67C7/0073 ,  H05F3/06

摘要： It is aimed to eliminate charges accumulated inside a wall structure of a resin vessel 2, which is sterilized by an electron beam irradiator 16, and an ionizer 134 disposed outside a filler 112 emits to the outer surface of the resin vessel 2 with negative ions having the same polarity as that of charges accumulated in the wall section of the resin vessel 2, while conveying the resin vessel 2 sterilized by the electron beam irradiator 16 to the filler 112, by which liquid fills the resin vessel 2. A filling nozzle 132 is connected to ground, and an ion flowing path is formed through a liquid column La filling the interior of the resin vessel 2 from the filling nozzle 132. The ions having the negative charges in a filling liquid L flow toward ground side of the ionizer 134, and on the other hand, ions having positive charges are attracted to the inner surface of the resin vessel 2 to thereby neutralize the charges remaining inside the wall structure of the resin vessel 2 with the ions having the positive charges.

摘要翻译： 旨在消除由电子束照射器16灭菌的树脂容器2的壁结构中蓄积的电荷，并且设置在填充物112外部的电离器134以负离子发射到树脂容器2的外表面， 与树脂容器2的壁部积聚的电荷的极性相同，同时将通过电子束照射器16灭菌的树脂容器2输送到填充剂112，由此填充树脂容器2.填充喷嘴132 连接到地面，并且通过从填充喷嘴132填充树脂容器2的内部的液柱La形成离子流动路径。在填充液L中具有负电荷的离子流向离子发生器134的接地侧， 另一方面，具有正电荷的离子被吸引到树脂容器2的内表面，从而以离子h中和残留在树脂容器2的壁结构内的电荷 积极收费。

公开(公告)号：US20050142882A1

公开(公告)日：2005-06-30

申请号：US10512637

申请日：2003-04-24

申请人： Takahiro Kida ,  Seiichi Miyazaki ,  Kazuhiko Nishimura ,  Nobuyuki Hayashi ,  Katsunori Arai

发明人： Takahiro Kida ,  Seiichi Miyazaki ,  Kazuhiko Nishimura ,  Nobuyuki Hayashi ,  Katsunori Arai

IPC分类号： B24B9/00 ,  B24B9/06 ,  B24B37/04 ,  H01L21/302 ,  H01L21/304 ,  H01L21/306 ,  H01L21/461

CPC分类号： H01L21/02008 ,  B24B9/065 ,  B24B37/042 ,  H01L21/02052 ,  H01L21/30604 ,  Y10S438/928

摘要： The present invention provides a method for manufacturing a semiconductor wafer capable of manufacturing a wafer without ring-like sag in an outer peripheral portion thereof when polishing an alkali etched wafer, and a wafer without the ring-like sag in an outer peripheral portion thereof. The present invention comprises: a back surface part polishing and edge polishing step for performing back surface part polishing and edge polishing such that mirror polishing is performed on a chamfered portion and an inner part extending inward from a boundary between the chamfered portion and a back surface of a starting wafer; and a front surface polishing step for mirror polishing a front surface of the wafer subjected to the back surface part polishing and edge polishing step holding the wafer by the back surface thereof.

摘要翻译： 本发明提供了一种制造半导体晶片的方法，该半导体晶片在其外周部分研磨碱蚀刻晶片时，并且在其外周部分中没有环状凹陷的晶片，能够在其外周部分制造没有环状凹陷的晶片。 本发明包括：背面部分抛光和边缘抛光步骤，用于进行背面部分抛光和边缘抛光，使得在倒角部分和从倒角部分和背面之间的边界向内延伸的内部部分进行镜面抛光 的起始晶圆; 以及前表面抛光步骤，用于对经过后表面抛光的晶片的前表面进行镜面抛光和通过其后表面保持晶片的边缘抛光步骤。

公开(公告)号：US06558227B1

公开(公告)日：2003-05-06

申请号：US09869146

申请日：2001-06-26

申请人： Masao Kodaira ,  Mikio Nakamura ,  Takahiro Kida

发明人： Masao Kodaira ,  Mikio Nakamura ,  Takahiro Kida

IPC分类号： B24B100

CPC分类号： B24B37/042 ,  B24B37/04

摘要： There is disclosed a method for polishing a work wherein polishing liquid is supplied to a polishing pad, and a relative movement is carried out between the work and the polishing pad with pressing the work on the polishing pad, wherein the work of which press pressure was set to 0 to terminate polishing is released from the polishing pad within 45 seconds after the termination of polishing. When plural works are simultaneously polished, preferably only the work to which press pressure was set to 0 to terminate polishing is released from the polishing pad, and polishing of the other works is continued, which are released from the polishing pad after press pressure thereto is set 0 one by one. In the resultant work, corrosion on the surface of the work due to the polishing liquid can be suppressed, an amount of the cleaning liquid used in a cleaning process can be reduced, particles can be removed efficiently in a short time, almost no pits are formed on the surface after polishing, only few amounts of particles are adhered, and there is almost no deviation in the works.

摘要翻译： 公开了一种抛光工件的方法，其中抛光液被供给到抛光垫，并且通过在抛光垫上按压工件在工件和抛光垫之间进行相对运动，其中压力为 设置为0以终止抛光在抛光结束后45秒内从抛光垫释放。 当多个工件同时抛光时，优选仅将压力设定为0的工件终止抛光从抛光垫释放，并且继续对其它工件进行抛光，这些工件在压制压力之后从抛光垫释放 逐个设置0。 在所得到的工作中，可以抑制由于抛光液引起的工件表面的腐蚀，可以减少清洗过程中使用的清洗液的量，能够在短时间内有效地除去颗粒，几乎没有凹坑 在抛光后在表面形成，只有少量的颗粒被粘附，并且在工程中几乎没有偏差。

公开(公告)号：US06217417B1

公开(公告)日：2001-04-17

申请号：US09267661

申请日：1999-03-15

申请人： Mikio Nakamura ,  Takahiro Kida

发明人： Mikio Nakamura ,  Takahiro Kida

IPC分类号： B24B722

CPC分类号： B24B37/30

摘要： A method for polishing a thin plate including holding the thin plate on a front surface of a holding plate, and moving the thin plate and a polishing pad relative to each other while pressing the thin plate against the polishing pad and supplying a polishing slurry between them. The holding plate is composed of ceramic. The front surface of the holding plate has been previously polished.

摘要翻译： 一种用于抛光薄板的方法，包括将薄板保持在保持板的前表面上，并且相对于彼此移动薄板和抛光垫，同时将薄板压在抛光垫上并在它们之间提供抛光浆料 。 保持板由陶瓷组成。 保持板的前表面已经被预先抛光。

公开(公告)号：US07250368B2

公开(公告)日：2007-07-31

申请号：US10512637

申请日：2003-04-24

申请人： Takahiro Kida ,  Seiichi Miyazaki ,  Kazuhiko Nishimura ,  Nobuyuki Hayashi ,  Katsunori Arai

发明人： Takahiro Kida ,  Seiichi Miyazaki ,  Kazuhiko Nishimura ,  Nobuyuki Hayashi ,  Katsunori Arai

IPC分类号： H01L21/304

CPC分类号： H01L21/02008 ,  B24B9/065 ,  B24B37/042 ,  H01L21/02052 ,  H01L21/30604 ,  Y10S438/928

摘要： The present invention provides a method for manufacturing a semiconductor wafer capable of manufacturing a wafer without ring-like sag in an outer peripheral portion thereof when polishing an alkali etched wafer, and a wafer without the ring-like sag in an outer peripheral portion thereof. The present invention comprises: a back surface part polishing and edge polishing step for performing back surface part polishing and edge polishing such that mirror polishing is performed on a chamfered portion and an inner part extending inward from a boundary between the chamfered portion and a back surface of a starting wafer; and a front surface polishing step for mirror polishing a front surface of the wafer subjected to the back surface part polishing and edge polishing step holding the wafer by the back surface thereof.

摘要翻译： 本发明提供了一种制造半导体晶片的方法，该半导体晶片在其外周部分研磨碱蚀刻晶片时，并且在其外周部分中没有环状凹陷的晶片，能够在其外周部分制造没有环状凹陷的晶片。 本发明包括：背面部分抛光和边缘抛光步骤，用于进行背面部分抛光和边缘抛光，使得在倒角部分和从倒角部分和背面之间的边界向内延伸的内部部分进行镜面抛光 的起始晶圆; 以及前表面抛光步骤，用于对经过后表面抛光的晶片的前表面进行镜面抛光和通过其后表面保持晶片的边缘抛光步骤。

公开(公告)号：US08505269B2

公开(公告)日：2013-08-13

申请号：US12803276

申请日：2010-06-23

申请人： Toshiya Kobayashi ,  Mitsuomi Narita ,  Tomohiko Sugimori ,  Tsunehiko Yokoi ,  Yukinobu Nishino ,  Masami Hayashi ,  Takashi Kadoya ,  Tokuo Nishi ,  Yukihiro Yamamoto ,  Takuya Onishi ,  Takahiro Kida ,  Kouichi Murata

发明人： Toshiya Kobayashi ,  Mitsuomi Narita ,  Tomohiko Sugimori ,  Tsunehiko Yokoi ,  Yukinobu Nishino ,  Masami Hayashi ,  Takashi Kadoya ,  Tokuo Nishi ,  Yukihiro Yamamoto ,  Takuya Onishi ,  Takahiro Kida ,  Kouichi Murata

IPC分类号： B65B3/04

CPC分类号： H05F1/00 ,  A61L2/087 ,  B67C7/0073 ,  H05F3/06

摘要： Charges accumulated inside a wall structure of a resin vessel, which is sterilized by an electron beam irradiator, and an ionizer disposed outside a filler emits to the outer surface of the resin vessel are eliminated with negative ions having the same polarity as that of charges accumulated in the wall section of the resin vessel, while conveying the resin vessel sterilized by the electron beam irradiator to the filler, by which liquid fills the resin vessel.

摘要翻译： 通过电子束照射器灭菌的树脂容器的壁结构中积聚的电荷和设置在填充物外部的填充物的离子发生器被排出到具有与积累的电荷相同极性的负离子 在树脂容器的壁部分中，同时将通过电子束照射器灭菌的树脂容器输送到填充剂，液体填充树脂容器。

公开(公告)号：US20080125016A1

公开(公告)日：2008-05-29

申请号：US11791837

申请日：2005-11-25

申请人： Mikio Nakamura ,  Takahiro Kida ,  Tomofumi Takano ,  Toshihiko Imai ,  Masaaki Ohshima

发明人： Mikio Nakamura ,  Takahiro Kida ,  Tomofumi Takano ,  Toshihiko Imai ,  Masaaki Ohshima

IPC分类号： B24B1/00 ,  B24D3/00

CPC分类号： C09K3/1463 ,  B24B37/044 ,  C09G1/02

摘要： The present invention is a method for producing a polishing agent in which silica particles are dispersed in an aqueous solution, comprising at least a step of removing metal compound ions from a prepared silica sol by ion exchange (B); a step of purifying further the ion-exchanged silica sol (D); a step of adding alkali metal hydroxide to the purified silica sol (F); and a step of adding an acid to the silica sol to which the alkali metal hydroxide is added (G). There is provided a method for producing a polishing agent which can extremely effectively suppress metal contamination when a silicon wafer or the like is polished can be produced.

摘要翻译： 本发明是一种生产抛光剂的方法，其中二氧化硅颗粒分散在水溶液中，其至少包括通过离子交换（B）从制备的二氧化硅溶胶中除去金属化合物离子的步骤; 进一步纯化离子交换硅溶胶（D）的步骤; 向纯化的硅溶胶（F）中加入碱金属氢氧化物的步骤; 以及向添加有碱金属氢氧化物的硅溶胶中添加酸的工序（G）。 提供了可以制造抛光剂的方法，其可以在制造硅晶片等被抛光时极其有效地抑制金属污染。