Plasma processing apparatus, electrode unit, feeder member and radio frequency feeder rod
    1.
    发明授权
    Plasma processing apparatus, electrode unit, feeder member and radio frequency feeder rod 有权
    等离子体处理装置,电极单元,馈线构件和射频馈线棒

    公开(公告)号:US07230202B2

    公开(公告)日:2007-06-12

    申请号:US10927587

    申请日:2004-08-27

    IPC分类号: B23K9/00

    摘要: Disclosed herein is a plasma processing apparatus that introduces a process gas into an airtight processing container, that applies a radio frequency power to generate plasma, and that conducts a plasma process to an object to be processed arranged in the processing container. The plasma processing apparatus includes: an electrode unit arranged in the processing container, the electrode unit having an electrode for applying the radio frequency power, and a space portion arranged in the electrode unit, the space portion insulating the electrode and the processing container from each other. The space portion communicates with atmospheric air outside the processing container.

    摘要翻译: 这里公开了一种等离子体处理装置,其将处理气体引入到气密处理容器中,该气密处理容器施加射频功率以产生等离子体,并且将等离子体处理传送到布置在处理容器中的被处理物体。 等离子体处理装置包括:布置在处理容器中的电极单元,具有用于施加射频电力的电极的电极单元和布置在电极单元中的空间部分,每个电极单元绝缘电极和处理容器的空间部分 其他。 空间部分与处理容器外部的大气连通。

    Plasma processing apparatus, electrode unit, feeder member and radio frequency feeder rod
    3.
    发明申请
    Plasma processing apparatus, electrode unit, feeder member and radio frequency feeder rod 有权
    等离子体处理装置,电极单元,馈线构件和射频馈线棒

    公开(公告)号:US20050023254A1

    公开(公告)日:2005-02-03

    申请号:US10927587

    申请日:2004-08-27

    IPC分类号: H01J37/32 B23K10/00

    摘要: The present invention relates to a plasma processing apparatus that introduces a process gas into an airtight processing container, that applies a radio frequency power to generate plasma, and that conducts a plasma process to an object to be processed arranged in the processing container. The plasma processing apparatus of the present invention includes: an electrode unit arranged in the processing container, the electrode unit having an electrode for applying the radio frequency power, and a space portion arranged in the electrode unit, the space portion insulating the electrode and the processing container from each other. The space portion is communicated with an atmospheric air outside the processing container.

    摘要翻译: 等离子体处理装置技术领域本发明涉及一种等离子体处理装置,其将处理气体引入到气密处理容器中,该处理容器应用射频功率以产生等离子体,并且将等离子体处理传送到处理容器中布置的被处理物体。 本发明的等离子体处理装置包括:布置在处理容器中的电极单元,具有用于施加射频功率的电极的电极单元和布置在电极单元中的空间部分,绝缘电极和 处理容器彼此。 空间部分与处理容器外部的大气连通。

    Electrostatic chuck device
    4.
    发明授权
    Electrostatic chuck device 有权
    静电吸盘装置

    公开(公告)号:US08284538B2

    公开(公告)日:2012-10-09

    申请号:US11835743

    申请日:2007-08-08

    IPC分类号: H01L21/687

    CPC分类号: H01L21/6833

    摘要: An electrostatic chuck device includes an electrostatic chuck section, a metal base section, and a dielectric plate. The electrostatic chuck section has a substrate, a main surface of which serves as a mounting surface for a plate-like sample, an electrostatic-adsorption inner electrode built in the substrate, and a power supply terminal for applying a DC voltage to the electrostatic-adsorption inner electrode. Here, a dielectric plate is fixed to a concave portion formed in the metal base section. The dielectric plate and the electrostatic chuck section are adhesively bonded to each other with an insulating adhesive bonding layer interposed therebetween. The dielectric plate and the concave portion are adhesively bonded to each other with a conductive adhesive bonding layer interposed therebetween, the volume resistivity of which is 1.0×10−2 Ωcm or less.

    摘要翻译: 静电吸盘装置包括静电吸盘部,金属基部和电介质板。 静电吸盘部具有基板,其主面作为板状试样的安装面,内置于基板的静电吸附内部电极,以及向静电吸引部施加直流电压的电源端子, 吸附内电极。 这里,电介质板被固定到形成在金属基部中的凹部。 电介质板和静电卡盘部分之间插入绝缘粘合剂粘合层彼此粘合。 电介质板和凹部之间以导电性粘合剂层粘合地结合,其体积电阻率为1.0×10-2&OHgr·cm以下。

    TABLE FOR PLASMA PROCESSING APPARATUS AND PLASMA PROCESSING APPARATUS
    5.
    发明申请
    TABLE FOR PLASMA PROCESSING APPARATUS AND PLASMA PROCESSING APPARATUS 审中-公开
    等离子体处理装置和等离子体处理装置的表

    公开(公告)号:US20110192540A1

    公开(公告)日:2011-08-11

    申请号:US13032360

    申请日:2011-02-22

    IPC分类号: H01L21/3065 C23C16/50

    摘要: An object of the present invention is to suppress damage of an electrostatic chuck, by controlling stress exerted on each part of a table, which includes an electrically conductive material, i.e., an electrode for generating plasma, a dielectric layer for enhancing the in-plane uniformity of a plasma process, and an electrostatic chuck. The table for a plasma processing apparatus includes an electrically conductive member connected with a high frequency power source and adapted for plasma generation, for drawing ions present in the plasma, or for both thereof; a dielectric layer provided on a top face of the electrically conductive member, having a central portion and a peripheral portion that are different in thickness relative to each other, and adapted for providing uniformity of high frequency electric field intensity in a plane over the substrate to be processed; and an electrode film for an electrostatic chuck, provided in the dielectric layer and adapted for electrostatically chucking the substrate onto a top face of the dielectric layer. With such configuration, the stress exerted on the electrostatic chuck due to temperature change can be controlled.

    摘要翻译: 本发明的一个目的是通过控制施加在桌子的每个部分上的应力来抑制静电卡盘的损坏,包括导电材料即用于产生等离子体的电极,用于增强平面内的电介质层 等离子体工艺的均匀性和静电卡盘。 用于等离子体处理装置的工作台包括与高频电源连接并适于等离子体产生的导电构件,用于吸收存在于等离子体中的离子,或者用于两者; 设置在所述导电构件的顶面上的电介质层,具有相对于彼此不同厚度的中心部分和周边部分,并且适于提供在所述基板上的平面中的高频电场强度的均匀性, 被处理 和用于静电卡盘的电极膜,设置在电介质层中并适用于将电极静电夹持在电介质层的顶面上。 通过这样的结构,可以控制由于温度变化而施加在静电卡盘上的应力。

    Electrostatic chuck
    6.
    发明授权
    Electrostatic chuck 有权
    静电吸盘

    公开(公告)号:US07619870B2

    公开(公告)日:2009-11-17

    申请号:US11834994

    申请日:2007-08-07

    IPC分类号: H01T23/00

    CPC分类号: H01L21/6833

    摘要: An electrostatic chuck device includes an electrostatic chuck section including a substrate and a power supply terminal for applying a DC voltage to an electrostatic-adsorption inner electrode; and a metal base section fixed to the other main surface of the electrostatic chuck section. Here, a concave portion is formed in the main surface of the metal base section facing the electrostatic chuck section and a dielectric plate is fixed to the concave portion. The dielectric plate and the electrostatic chuck section are adhesively bonded to each other with an insulating adhesive bonding layer interposed therebetween. The dielectric plate and the concave portion are adhesively bonded to each other with an insulating adhesive bonding layer interposed therebetween. The dielectric constant of the insulating adhesive bonding layer is smaller than that of any one of the dielectric plate and the substrate.

    摘要翻译: 静电吸盘装置包括:静电吸盘部,其包括基板和用于向静电吸附内部电极施加直流电压的电源端子; 以及固定在静电吸盘部的另一个主面上的金属基部。 这里,在面向静电卡盘部的金属基部的主面上形成有凹部,电介质板固定在凹部。 电介质板和静电卡盘部分之间插入绝缘粘合剂粘合层彼此粘合。 电介质板和凹部通过绝缘性粘合剂层粘合而彼此接合。 绝缘粘合剂接合层的介电常数小于介质板和基板中的任何一种的介电常数。

    Stage for plasma processing apparatus, and plasma processing apparatus
    7.
    发明申请
    Stage for plasma processing apparatus, and plasma processing apparatus 审中-公开
    等离子体处理装置的阶段和等离子体处理装置

    公开(公告)号:US20080041312A1

    公开(公告)日:2008-02-21

    申请号:US11889339

    申请日:2007-08-10

    IPC分类号: C23C16/458

    摘要: [Object]To provide a stage for plasma processing apparatus, the stage being capable of improving uniformity of electric field strength in a plasma so as to enhance an in-plane uniformity of a plasma process to a substrate, and to provide a plasma processing apparatus provided with this stage. [Means for Solving the Problem]A stage 3 for a plasma processing apparatus 2 comprises: a conductive member 31 connected to a radiofrequency power source, the conductive member serving as an electrode for generating a plasma and/or an electrode for drawing ions from a plasma; a dielectric layer 32 covering a central part of an upper surface of the conductive member, for making uniform a radiofrequency electric field applied to a plasma through a substrate to be processed wafer W) placed on the placing surface; and an electrostatic chuck 33 laminated on the dielectric layer 35, the electrostatic chuck having an electrode film embedded therein. The electrode film satisfies δ/z≧1,000 (z; a thickness of the electrode film 35, 6; a skin depth of the electrode film for the electrostatic chuck as to a radiofrequency power supplied from the radiofrequency power source).

    摘要翻译: 为了提供等离子体处理装置的载物台,能够提高等离子体的电场强度的均匀性,从而提高等离子体处理对基板的面内均匀性,并且提供等离子体处理装置 提供这个阶段。 解决问题的手段等离子体处理装置2的阶段3包括:连接到射频电源的导电构件31,用作产生等离子体的电极的导电构件和/或用于从 等离子体; 覆盖导电部件的上表面的中心部分的电介质层32,用于使放置在放置面上的待处理晶片W的等离子体的射频电场均匀化; 以及层压在电介质层35上的静电卡盘33,其中嵌有电极膜的静电卡盘。 电极膜满足delta / z> = 1,000(z;电极膜35,6的厚度;静电卡盘的电极膜的表皮深度,从射频电源提供的射频电力)。

    Projection type image display apparatus
    8.
    发明授权
    Projection type image display apparatus 失效
    投影型图像显示装置

    公开(公告)号:US07744226B2

    公开(公告)日:2010-06-29

    申请号:US11384645

    申请日:2006-03-20

    CPC分类号: G03B21/10 G03B21/20 G03B21/28

    摘要: A projection type image display apparatus has: an illumination optical system generating illumination light; a projection optical system projecting an image light onto a screen; a digital micromirror device (DMD) modulating the illumination light so as to form the image light; and a reflection mirror arranged in a position opposite to an optical path of the illumination light entering the DMD. The reflection mirror reflects an off-light reflected by the DMD in an “OFF” state in a direction separated from a projection light reflected by the DMD in an “ON” state.

    摘要翻译: 投影型图像显示装置具有:产生照明光的照明光学系统; 投影光学系统将图像光投射到屏幕上; 调制照明光以形成图像光的数字微镜器件(DMD); 以及配置在与进入DMD的照明光的光路相反的位置的反射镜。 反射镜反射由与DMD反射的投影光分离的“ON”状态的“OFF”状态的DMD反射的偏光。

    Method of producing aluminum alloy sheet for lithographic printing plate
    9.
    发明申请
    Method of producing aluminum alloy sheet for lithographic printing plate 审中-公开
    平版印刷版铝合金板的制造方法

    公开(公告)号:US20080289731A1

    公开(公告)日:2008-11-27

    申请号:US12152145

    申请日:2008-05-13

    IPC分类号: C22F1/04

    摘要: A method of producing an aluminum alloy sheet for a lithographic printing plate includes homogenizing an ingot of an aluminum alloy at 500 to 610° C. for one hour or more, the aluminum alloy containing 0.05 to 1.5% of Mg, 0.1 to 0.7% of Fe, 0.03 to 0.15% of Si, 0.0001 to 0.10% of Cu, and 0.0001 to 0.1% of Ti, with the balance being aluminum and unavoidable impurities, subjecting the homogenized product to rough hot rolling, a start temperature of the rough hot rolling being 430 to 500° C. and a finish temperature of the rough hot rolling being 400° C. or more, holding the product subjected to the rough hot rolling for 60 to 300 seconds after completion of the rough hot rolling to recrystallize the surface of the product, subjecting the resulting product to finish hot rolling that is finished at 320 to 370° C., and winding up the resulting product in the shape of a coil to obtain a hot-rolled product having a surface with an average recrystallized grain size in a direction perpendicular to a rolling direction of 50 μm or less. The aluminum alloy may contain 2 to 30 ppm of Pb.

    摘要翻译: 制造平版印刷版铝合金板的方法包括在500〜610℃下均匀化铝合金锭1小时以上,含有0.05〜1.5%的Mg的铝合金,0.1〜0.7%的Mg Fe,0.03〜0.15%的Si,0.0001〜0.10%的Cu和0.0001〜0.1%的Ti,余量为铝和不可避免的杂质,对均质化物进行粗加热,粗轧的开始温度 为430〜500℃,粗加热后的终轧温度为400℃以上,在粗加工热轧结束后,使粗轧后的产品保持60〜300秒,使表面再结晶 该产品对所得产品进行在320-370℃下精加工的热轧,并将所得产品卷绕成线圈形状,得到具有平均再结晶晶粒度的表面的热轧产品 在一个方向上 滚动方向为50mum以下。 铝合金可含有2〜30ppm的Pb。

    Projection unit and projection type image display apparatus
    10.
    发明申请
    Projection unit and projection type image display apparatus 失效
    投影单元和投影型图像显示装置

    公开(公告)号:US20080013055A1

    公开(公告)日:2008-01-17

    申请号:US11823244

    申请日:2007-06-27

    IPC分类号: G03B21/53

    CPC分类号: G03B21/28 G03B21/53

    摘要: A projection unit 17 effectively corrects out of focus due to a temperature rise. A mirror holding mechanism of a concave mirror 25 has a mirror holder 41 and a mirror holder base 42. The concave mirror 25 is slidably housed in the mirror holder 41. A focus correction member 57, which expands by heat, is disposed between a back face of the concave mirror 25 and reference plane S formed in the mirror holder. The concave mirror 25 and the focus correction element 57 are urged to the reference plane S by a mirror retainer spring 59.

    摘要翻译: 投影单元17由于温度上升而有效地校正了焦点偏离。 凹面镜25的反射镜保持机构具有镜支架41和反射镜保持器基座42。 凹面镜25可滑动地容纳在镜保持器41中。 通过加热膨胀的聚焦校正构件57设置在凹面镜25的后表面和形成在镜保持器中的基准面S之间。 凹面镜25和聚焦校正元件57被反射镜保持弹簧59推压到基准面S。