摘要:
Disclosed herein is a plasma processing apparatus that introduces a process gas into an airtight processing container, that applies a radio frequency power to generate plasma, and that conducts a plasma process to an object to be processed arranged in the processing container. The plasma processing apparatus includes: an electrode unit arranged in the processing container, the electrode unit having an electrode for applying the radio frequency power, and a space portion arranged in the electrode unit, the space portion insulating the electrode and the processing container from each other. The space portion communicates with atmospheric air outside the processing container.
摘要:
Disclosed herein is a plasma processing apparatus that introduces a process gas into an airtight processing container, that applies a radio frequency power to generate plasma, and that conducts a plasma process to an object to be processed arranged in the processing container. The plasma processing apparatus includes: an electrode unit arranged in the processing container, the electrode unit having an electrode for applying the radio frequency power, and a space portion arranged in the electrode unit, the space portion insulating the electrode and the processing container from each other. The space portion communicates with atmospheric air outside the processing container.
摘要:
The present invention relates to a plasma processing apparatus that introduces a process gas into an airtight processing container, that applies a radio frequency power to generate plasma, and that conducts a plasma process to an object to be processed arranged in the processing container. The plasma processing apparatus of the present invention includes: an electrode unit arranged in the processing container, the electrode unit having an electrode for applying the radio frequency power, and a space portion arranged in the electrode unit, the space portion insulating the electrode and the processing container from each other. The space portion is communicated with an atmospheric air outside the processing container.
摘要:
An electrostatic chuck device includes an electrostatic chuck section, a metal base section, and a dielectric plate. The electrostatic chuck section has a substrate, a main surface of which serves as a mounting surface for a plate-like sample, an electrostatic-adsorption inner electrode built in the substrate, and a power supply terminal for applying a DC voltage to the electrostatic-adsorption inner electrode. Here, a dielectric plate is fixed to a concave portion formed in the metal base section. The dielectric plate and the electrostatic chuck section are adhesively bonded to each other with an insulating adhesive bonding layer interposed therebetween. The dielectric plate and the concave portion are adhesively bonded to each other with a conductive adhesive bonding layer interposed therebetween, the volume resistivity of which is 1.0×10−2 Ωcm or less.
摘要:
An object of the present invention is to suppress damage of an electrostatic chuck, by controlling stress exerted on each part of a table, which includes an electrically conductive material, i.e., an electrode for generating plasma, a dielectric layer for enhancing the in-plane uniformity of a plasma process, and an electrostatic chuck. The table for a plasma processing apparatus includes an electrically conductive member connected with a high frequency power source and adapted for plasma generation, for drawing ions present in the plasma, or for both thereof; a dielectric layer provided on a top face of the electrically conductive member, having a central portion and a peripheral portion that are different in thickness relative to each other, and adapted for providing uniformity of high frequency electric field intensity in a plane over the substrate to be processed; and an electrode film for an electrostatic chuck, provided in the dielectric layer and adapted for electrostatically chucking the substrate onto a top face of the dielectric layer. With such configuration, the stress exerted on the electrostatic chuck due to temperature change can be controlled.
摘要:
An electrostatic chuck device includes an electrostatic chuck section including a substrate and a power supply terminal for applying a DC voltage to an electrostatic-adsorption inner electrode; and a metal base section fixed to the other main surface of the electrostatic chuck section. Here, a concave portion is formed in the main surface of the metal base section facing the electrostatic chuck section and a dielectric plate is fixed to the concave portion. The dielectric plate and the electrostatic chuck section are adhesively bonded to each other with an insulating adhesive bonding layer interposed therebetween. The dielectric plate and the concave portion are adhesively bonded to each other with an insulating adhesive bonding layer interposed therebetween. The dielectric constant of the insulating adhesive bonding layer is smaller than that of any one of the dielectric plate and the substrate.
摘要:
[Object]To provide a stage for plasma processing apparatus, the stage being capable of improving uniformity of electric field strength in a plasma so as to enhance an in-plane uniformity of a plasma process to a substrate, and to provide a plasma processing apparatus provided with this stage. [Means for Solving the Problem]A stage 3 for a plasma processing apparatus 2 comprises: a conductive member 31 connected to a radiofrequency power source, the conductive member serving as an electrode for generating a plasma and/or an electrode for drawing ions from a plasma; a dielectric layer 32 covering a central part of an upper surface of the conductive member, for making uniform a radiofrequency electric field applied to a plasma through a substrate to be processed wafer W) placed on the placing surface; and an electrostatic chuck 33 laminated on the dielectric layer 35, the electrostatic chuck having an electrode film embedded therein. The electrode film satisfies δ/z≧1,000 (z; a thickness of the electrode film 35, 6; a skin depth of the electrode film for the electrostatic chuck as to a radiofrequency power supplied from the radiofrequency power source).
摘要:
A projection type image display apparatus has: an illumination optical system generating illumination light; a projection optical system projecting an image light onto a screen; a digital micromirror device (DMD) modulating the illumination light so as to form the image light; and a reflection mirror arranged in a position opposite to an optical path of the illumination light entering the DMD. The reflection mirror reflects an off-light reflected by the DMD in an “OFF” state in a direction separated from a projection light reflected by the DMD in an “ON” state.
摘要:
A method of producing an aluminum alloy sheet for a lithographic printing plate includes homogenizing an ingot of an aluminum alloy at 500 to 610° C. for one hour or more, the aluminum alloy containing 0.05 to 1.5% of Mg, 0.1 to 0.7% of Fe, 0.03 to 0.15% of Si, 0.0001 to 0.10% of Cu, and 0.0001 to 0.1% of Ti, with the balance being aluminum and unavoidable impurities, subjecting the homogenized product to rough hot rolling, a start temperature of the rough hot rolling being 430 to 500° C. and a finish temperature of the rough hot rolling being 400° C. or more, holding the product subjected to the rough hot rolling for 60 to 300 seconds after completion of the rough hot rolling to recrystallize the surface of the product, subjecting the resulting product to finish hot rolling that is finished at 320 to 370° C., and winding up the resulting product in the shape of a coil to obtain a hot-rolled product having a surface with an average recrystallized grain size in a direction perpendicular to a rolling direction of 50 μm or less. The aluminum alloy may contain 2 to 30 ppm of Pb.
摘要:
A projection unit 17 effectively corrects out of focus due to a temperature rise. A mirror holding mechanism of a concave mirror 25 has a mirror holder 41 and a mirror holder base 42. The concave mirror 25 is slidably housed in the mirror holder 41. A focus correction member 57, which expands by heat, is disposed between a back face of the concave mirror 25 and reference plane S formed in the mirror holder. The concave mirror 25 and the focus correction element 57 are urged to the reference plane S by a mirror retainer spring 59.