公开(公告)号：US08284538B2

公开(公告)日：2012-10-09

申请号：US11835743

申请日：2007-08-08

申请人： Shinji Himori ,  Shoichiro Matsuyama ,  Atsushi Matsuura ,  Hiroshi Inazumachi ,  Mamoru Kosakai ,  Yukio Miura ,  Keigo Maki

发明人： Shinji Himori ,  Shoichiro Matsuyama ,  Atsushi Matsuura ,  Hiroshi Inazumachi ,  Mamoru Kosakai ,  Yukio Miura ,  Keigo Maki

IPC分类号： H01L21/687

CPC分类号： H01L21/6833

摘要： An electrostatic chuck device includes an electrostatic chuck section, a metal base section, and a dielectric plate. The electrostatic chuck section has a substrate, a main surface of which serves as a mounting surface for a plate-like sample, an electrostatic-adsorption inner electrode built in the substrate, and a power supply terminal for applying a DC voltage to the electrostatic-adsorption inner electrode. Here, a dielectric plate is fixed to a concave portion formed in the metal base section. The dielectric plate and the electrostatic chuck section are adhesively bonded to each other with an insulating adhesive bonding layer interposed therebetween. The dielectric plate and the concave portion are adhesively bonded to each other with a conductive adhesive bonding layer interposed therebetween, the volume resistivity of which is 1.0×10−2 Ωcm or less.

摘要翻译： 静电吸盘装置包括静电吸盘部，金属基部和电介质板。 静电吸盘部具有基板，其主面作为板状试样的安装面，内置于基板的静电吸附内部电极，以及向静电吸引部施加直流电压的电源端子， 吸附内电极。 这里，电介质板被固定到形成在金属基部中的凹部。 电介质板和静电卡盘部分之间插入绝缘粘合剂粘合层彼此粘合。 电介质板和凹部之间以导电性粘合剂层粘合地结合，其体积电阻率为1.0×10-2＆OHgr·cm以下。

公开(公告)号：US20110192540A1

公开(公告)日：2011-08-11

申请号：US13032360

申请日：2011-02-22

申请人： Masakazu Higuma ,  Shinji Himori ,  Shoichiro Matsuyama ,  Atsushi Matsuura

发明人： Masakazu Higuma ,  Shinji Himori ,  Shoichiro Matsuyama ,  Atsushi Matsuura

IPC分类号： H01L21/3065 ,  C23C16/50

CPC分类号： H01L21/6831 ,  H01J37/32532 ,  H01J2237/2001

摘要： An object of the present invention is to suppress damage of an electrostatic chuck, by controlling stress exerted on each part of a table, which includes an electrically conductive material, i.e., an electrode for generating plasma, a dielectric layer for enhancing the in-plane uniformity of a plasma process, and an electrostatic chuck. The table for a plasma processing apparatus includes an electrically conductive member connected with a high frequency power source and adapted for plasma generation, for drawing ions present in the plasma, or for both thereof; a dielectric layer provided on a top face of the electrically conductive member, having a central portion and a peripheral portion that are different in thickness relative to each other, and adapted for providing uniformity of high frequency electric field intensity in a plane over the substrate to be processed; and an electrode film for an electrostatic chuck, provided in the dielectric layer and adapted for electrostatically chucking the substrate onto a top face of the dielectric layer. With such configuration, the stress exerted on the electrostatic chuck due to temperature change can be controlled.

摘要翻译： 本发明的一个目的是通过控制施加在桌子的每个部分上的应力来抑制静电卡盘的损坏，包括导电材料即用于产生等离子体的电极，用于增强平面内的电介质层 等离子体工艺的均匀性和静电卡盘。 用于等离子体处理装置的工作台包括与高频电源连接并适于等离子体产生的导电构件，用于吸收存在于等离子体中的离子，或者用于两者; 设置在所述导电构件的顶面上的电介质层，具有相对于彼此不同厚度的中心部分和周边部分，并且适于提供在所述基板上的平面中的高频电场强度的均匀性， 被处理 和用于静电卡盘的电极膜，设置在电介质层中并适用于将电极静电夹持在电介质层的顶面上。 通过这样的结构，可以控制由于温度变化而施加在静电卡盘上的应力。

公开(公告)号：US07619870B2

公开(公告)日：2009-11-17

申请号：US11834994

申请日：2007-08-07

申请人： Shinji Himori ,  Shoichiro Matsuyama ,  Atsushi Matsuura ,  Hiroshi Inazumachi ,  Mamoru Kosakai ,  Yukio Miura ,  Keigo Maki

发明人： Shinji Himori ,  Shoichiro Matsuyama ,  Atsushi Matsuura ,  Hiroshi Inazumachi ,  Mamoru Kosakai ,  Yukio Miura ,  Keigo Maki

IPC分类号： H01T23/00

CPC分类号： H01L21/6833

摘要： An electrostatic chuck device includes an electrostatic chuck section including a substrate and a power supply terminal for applying a DC voltage to an electrostatic-adsorption inner electrode; and a metal base section fixed to the other main surface of the electrostatic chuck section. Here, a concave portion is formed in the main surface of the metal base section facing the electrostatic chuck section and a dielectric plate is fixed to the concave portion. The dielectric plate and the electrostatic chuck section are adhesively bonded to each other with an insulating adhesive bonding layer interposed therebetween. The dielectric plate and the concave portion are adhesively bonded to each other with an insulating adhesive bonding layer interposed therebetween. The dielectric constant of the insulating adhesive bonding layer is smaller than that of any one of the dielectric plate and the substrate.

摘要翻译： 静电吸盘装置包括：静电吸盘部，其包括基板和用于向静电吸附内部电极施加直流电压的电源端子; 以及固定在静电吸盘部的另一个主面上的金属基部。 这里，在面向静电卡盘部的金属基部的主面上形成有凹部，电介质板固定在凹部。 电介质板和静电卡盘部分之间插入绝缘粘合剂粘合层彼此粘合。 电介质板和凹部通过绝缘性粘合剂层粘合而彼此接合。 绝缘粘合剂接合层的介电常数小于介质板和基板中的任何一种的介电常数。

公开(公告)号：US20080041312A1

公开(公告)日：2008-02-21

申请号：US11889339

申请日：2007-08-10

申请人： Shoichiro Matsuyama ,  Shinji Himori ,  Atsushi Matsuura

发明人： Shoichiro Matsuyama ,  Shinji Himori ,  Atsushi Matsuura

IPC分类号： C23C16/458

CPC分类号： C23C16/4586 ,  H01J37/20 ,  H01J37/32091 ,  H01J37/32706 ,  H01J2237/2002 ,  H01L21/6833 ,  H01L21/68757

摘要： [Object]To provide a stage for plasma processing apparatus, the stage being capable of improving uniformity of electric field strength in a plasma so as to enhance an in-plane uniformity of a plasma process to a substrate, and to provide a plasma processing apparatus provided with this stage. [Means for Solving the Problem]A stage 3 for a plasma processing apparatus 2 comprises: a conductive member 31 connected to a radiofrequency power source, the conductive member serving as an electrode for generating a plasma and/or an electrode for drawing ions from a plasma; a dielectric layer 32 covering a central part of an upper surface of the conductive member, for making uniform a radiofrequency electric field applied to a plasma through a substrate to be processed wafer W) placed on the placing surface; and an electrostatic chuck 33 laminated on the dielectric layer 35, the electrostatic chuck having an electrode film embedded therein. The electrode film satisfies δ/z≧1,000 (z; a thickness of the electrode film 35, 6; a skin depth of the electrode film for the electrostatic chuck as to a radiofrequency power supplied from the radiofrequency power source).

摘要翻译： 为了提供等离子体处理装置的载物台，能够提高等离子体的电场强度的均匀性，从而提高等离子体处理对基板的面内均匀性，并且提供等离子体处理装置 提供这个阶段。 解决问题的手段等离子体处理装置2的阶段3包括：连接到射频电源的导电构件31，用作产生等离子体的电极的导电构件和/或用于从 等离子体; 覆盖导电部件的上表面的中心部分的电介质层32，用于使放置在放置面上的待处理晶片W的等离子体的射频电场均匀化; 以及层压在电介质层35上的静电卡盘33，其中嵌有电极膜的静电卡盘。 电极膜满足delta / z> = 1,000（z;电极膜35,6的厚度;静电卡盘的电极膜的表皮深度，从射频电源提供的射频电力）。

公开(公告)号：US20090285998A1

公开(公告)日：2009-11-19

申请号：US12505940

申请日：2009-07-20

申请人： Katsuya Okumura ,  Shinji Himori ,  Kazuya Nagaseki ,  Hiroki Matsumaru ,  Shoichiro Matsuyama ,  Toshiki Takahashi

发明人： Katsuya Okumura ,  Shinji Himori ,  Kazuya Nagaseki ,  Hiroki Matsumaru ,  Shoichiro Matsuyama ,  Toshiki Takahashi

IPC分类号： C23C16/513 ,  C23C14/24 ,  C23C16/04 ,  B05D1/32

CPC分类号： H01L21/3065 ,  H01J37/32009 ,  H01J37/32082 ,  H01J37/32541

摘要： A plasma processing apparatus for performing a plasma process on a target substrate includes a process container configured to accommodate the target substrate and to reduce pressure therein. A first electrode is disposed within the process container. A supply system is configured to supply a process gas into the process container. An electric field formation system is configured to form an RF electric field within the process container so as to generate plasma of the process gas. A number of protrusions are discretely disposed on a main surface of the first electrode and protrude toward a space where the plasma is generated.

摘要翻译： 用于在目标衬底上执行等离子体处理的等离子体处理装置包括：配置成容纳目标衬底并减少其中的压力的​​处理容器。 第一电极设置在处理容器内。 供应系统被配置为将处理气体供应到处理容器中。 电场形成系统被配置为在处理容器内形成RF电场，以产生处理气体的等离子体。 多个突起离散地设置在第一电极的主表面上，朝向产生等离子体的空间突出。

公开(公告)号：US20050276928A1

公开(公告)日：2005-12-15

申请号：US11195803

申请日：2005-08-03

申请人： Katsuya Okumura ,  Shinji Himori ,  Kazuya Nagaseki ,  Hiroki Matsumaru ,  Shoichiro Matsuyama ,  Toshiki Takahashi

发明人： Katsuya Okumura ,  Shinji Himori ,  Kazuya Nagaseki ,  Hiroki Matsumaru ,  Shoichiro Matsuyama ,  Toshiki Takahashi

IPC分类号： H05H1/46 ,  B01J19/08 ,  C23C14/00 ,  C23F4/00 ,  C25D17/10 ,  H01J37/32 ,  H01L21/205 ,  H01L21/3065

CPC分类号： H01L21/3065 ,  H01J37/32009 ,  H01J37/32082 ,  H01J37/32541

摘要： A plasma processing apparatus for performing a plasma process on a target substrate includes a process container configured to accommodate the target substrate and to reduce pressure therein. A first electrode is disposed within the process container. A supply system is configured to supply a process gas into the process container. An electric field formation system is configured to form an RF electric field within the process container so as to generate plasma of the process gas. A number of protrusions are discretely disposed on a main surface of the first electrode and protrude toward a space where the plasma is generated.

摘要翻译： 用于在目标衬底上执行等离子体处理的等离子体处理装置包括：配置成容纳目标衬底并减少其中的压力的​​处理容器。 第一电极设置在处理容器内。 供应系统被配置为将处理气体供应到处理容器中。 电场形成系统被配置为在处理容器内形成RF电场，以产生处理气体的等离子体。 多个突起离散地设置在第一电极的主表面上，朝向产生等离子体的空间突出。

公开(公告)号：US07585386B2

公开(公告)日：2009-09-08

申请号：US11195803

申请日：2005-08-03

申请人： Katsuya Okumura ,  Shinji Himori ,  Kazuya Nagaseki ,  Hiroki Matsumaru ,  Shoichiro Matsuyama ,  Toshiki Takahashi

发明人： Katsuya Okumura ,  Shinji Himori ,  Kazuya Nagaseki ,  Hiroki Matsumaru ,  Shoichiro Matsuyama ,  Toshiki Takahashi

IPC分类号： H01L21/00 ,  C23C16/00

CPC分类号： H01L21/3065 ,  H01J37/32009 ,  H01J37/32082 ,  H01J37/32541

摘要： A plasma processing apparatus for performing a plasma process on a target substrate includes a process container configured to accommodate the target substrate and to reduce pressure therein. A first electrode is disposed within the process container. A supply system is configured to supply a process gas into the process container. An electric field formation system is configured to form an RF electric field within the process container so as to generate plasma of the process gas. A number of protrusions are discretely disposed on a main surface of the first electrode and protrude toward a space where the plasma is generated.

摘要翻译： 用于在目标衬底上执行等离子体处理的等离子体处理装置包括：配置成容纳目标衬底并减少其中的压力的​​处理容器。 第一电极设置在处理容器内。 供应系统被配置为将处理气体供应到处理容器中。 电场形成系统被配置为在处理容器内形成RF电场，以产生处理气体的等离子体。 多个突起离散地设置在第一电极的主表面上，朝向产生等离子体的空间突出。

公开(公告)号：US20060118044A1

公开(公告)日：2006-06-08

申请号：US11292353

申请日：2005-12-02

申请人： Shinji Himori ,  Noriaki Imai ,  Katsumi Horiguchi ,  Takaaki Nezu ,  Shoichiro Matsuyama ,  Hiroki Matsumaru ,  Toshihiro Hayami ,  Kazuya Nagaseki ,  Itsuko Sakai ,  Tokuhisa Ohiwa ,  Yoshikazu Sugiyasu

发明人： Shinji Himori ,  Noriaki Imai ,  Katsumi Horiguchi ,  Takaaki Nezu ,  Shoichiro Matsuyama ,  Hiroki Matsumaru ,  Toshihiro Hayami ,  Kazuya Nagaseki ,  Itsuko Sakai ,  Tokuhisa Ohiwa ,  Yoshikazu Sugiyasu

IPC分类号： C23F1/00 ,  C23C16/00

CPC分类号： H01J37/32697 ,  H01J37/32082

摘要： A capacitive coupling plasma processing apparatus includes a process chamber configured to have a vacuum atmosphere, and a process gas supply section configured to supply a process gas into the chamber. In the chamber, a first electrode and a second electrode are disposed opposite each other. An RF power supply is disposed to supply an RF power to the first or second electrode to form an RF electric field within a plasma generation region between the first and second electrodes, so as to turn the process gas into plasma. The target substrate is supported by a support member between the first and second electrodes such that a process target surface thereof faces the second electrode. A conductive functional surface is disposed in a surrounding region around the plasma generation region and grounded to be coupled with the plasma in a sense of DC to expand the plasma.

摘要翻译： 电容耦合等离子体处理装置包括被配置为具有真空气氛的处理室和被配置为将处理气体供应到室中的处理气体供给部。 在腔室中，第一电极和第二电极相对设置。 设置RF电源以向第一或第二电极提供RF功率，以在第一和第二电极之间的等离子体产生区域内形成RF电场，以将处理气体转化为等离子体。 目标基板由第一和第二电极之间的支撑构件支撑，使得其工艺目标表面面向第二电极。 导电功能表面设置在等离子体产生区域周围的周围区域中，并且被接地以与DC等离子体耦合以扩展等离子体。

公开(公告)号：US08741098B2

公开(公告)日：2014-06-03

申请号：US11889340

申请日：2007-08-10

申请人： Akira Koshiishi ,  Shinji Himori ,  Shoichiro Matsuyama

发明人： Akira Koshiishi ,  Shinji Himori ,  Shoichiro Matsuyama

IPC分类号： C23C16/50 ,  C23C16/00 ,  C23F1/00 ,  H01L21/306

CPC分类号： H01J37/32082 ,  H01J37/32009 ,  H01J37/32532

摘要： Disclosed herein is a table 2 for use in a plasma processing system 1 that includes an electrically conductive member serving as a lower electrode 21 for plasma formation, a lower dielectric layer 22 (first dielectric layer) formed on the electrically conductive member so that it covers the center of the upper surface of the electrically conductive member, serving to make a high-frequency electric field to be applied to plasma via a substrate uniform, and an upper dielectric layer 24 (second dielectric layer) having a relative dielectric constant of 100 or more, formed on the electrically conductive member so that it is in contact at least with the edge of the substrate, in order to prevent a high-frequency current that has propagated along the electrically conductive member face from leaking to the outside of the substrate (wafer W).

摘要翻译： 本文公开了一种用于等离子体处理系统1的表2，其包括用作等离子体形成的下电极21的导电构件，形成在导电构件上的下电介质层22（第一电介质层），使得其覆盖 导电构件的上表面的中心，用于使通过基板均匀地施加到等离子体的高频电场;以及具有相对介电常数为100的上电介质层24（第二电介质层） 更多地形成在导电构件上，使得其至少与衬底的边缘接触，以便防止沿着导电构件面传播的高频电流泄漏到衬底的外部（ 晶圆W）。

公开(公告)号：US07922862B2

公开(公告)日：2011-04-12

申请号：US12505940

申请日：2009-07-20

申请人： Katsuya Okumura ,  Shinji Himori ,  Kazuya Nagaseki ,  Hiroki Matsumaru ,  Shoichiro Matsuyama ,  Toshiki Takahashi

发明人： Katsuya Okumura ,  Shinji Himori ,  Kazuya Nagaseki ,  Hiroki Matsumaru ,  Shoichiro Matsuyama ,  Toshiki Takahashi

IPC分类号： H01L21/00 ,  C23C14/00 ,  C23C16/00

CPC分类号： H01L21/3065 ,  H01J37/32009 ,  H01J37/32082 ,  H01J37/32541

摘要： A plasma processing apparatus for performing a plasma process on a target substrate includes a process container configured to accommodate the target substrate and to reduce pressure therein. A first electrode is disposed within the process container. A supply system is configured to supply a process gas into the process container. An electric field formation system is configured to form an RF electric field within the process container so as to generate plasma of the process gas. A number of protrusions are discretely disposed on a main surface of the first electrode and protrude toward a space where the plasma is generated.

摘要翻译： 用于在目标衬底上执行等离子体处理的等离子体处理装置包括：配置成容纳目标衬底并减少其中的压力的​​处理容器。 第一电极设置在处理容器内。 供应系统被配置为将处理气体供应到处理容器中。 电场形成系统被配置为在处理容器内形成RF电场，以产生处理气体的等离子体。 多个突起离散地设置在第一电极的主表面上，朝向产生等离子体的空间突出。