Methods of forming conductive structures
    1.
    发明授权
    Methods of forming conductive structures 失效
    形成导电结构的方法

    公开(公告)号:US07666776B2

    公开(公告)日:2010-02-23

    申请号:US11218232

    申请日:2005-09-01

    IPC分类号: H01L21/44

    摘要: The invention includes methods of forming pluralities of electrically conductive structures. The methods can include formation of a gradient-containing material across a substrate and in direct physical contact with conductive surfaces of nodes. The gradient-containing material can consist essentially of tantalum nitride at a lowermost portion in contact with the conductive surfaces, consist essentially of tantalum at an uppermost portion, and have a TaN/Ta gradient extending between the lowermost and uppermost portions. Alternatively, the gradient-containing material can have a Co/W gradient extending therethrough. Conductive structures can be formed over the gradient-containing material. The invention also includes constructions comprising electrically conductive lines over a material having a TaN/Ta gradient, or a W/Co gradient, extending therethrough.

    摘要翻译: 本发明包括形成多个导电结构的方法。 这些方法可以包括在衬底上形成含梯度的材料,并且与节点的导电表面直接物理接触。 含梯度的材料可以基本上由在与导电表面接触的最下部分的氮化钽组成,其基本上由最上部的钽构成,并且具有在最下部和最上部之间延伸的TaN / Ta梯度。 或者,含梯度的材料可以具有从其延伸的Co / W梯度。 可以在含梯度材料上形成导电结构。 本发明还包括在TaN / Ta梯度或延伸穿过其中的W / Co梯度的材料上包括导电线的构造。

    Method of electroplating a substance over a semiconductor substrate
    2.
    发明授权
    Method of electroplating a substance over a semiconductor substrate 有权
    在半导体衬底上电镀物质的方法

    公开(公告)号:US07344977B2

    公开(公告)日:2008-03-18

    申请号:US11053794

    申请日:2005-02-08

    IPC分类号: H01L21/4763

    摘要: The invention includes methods of electrochemically treating semiconductor substrates. The invention includes a method of electroplating a substance. A substrate having defined first and second regions is provided. The first and second regions can be defined by a single mask, and accordingly can be considered to be self-aligned relative to one another. A first electrically conductive material is formed over the first region, and a second electrically conductive material is formed over the second region. The first and second electrically conductive materials are exposed to an electrolytic solution while providing electrical current to the first and second electrically conductive materials. A desired substance is selectively electroplated onto the first electrically conductive material during the exposing of the first and second electrically conductive materials to the electrolytic solution. The invention also includes methods of forming capacitor constructions.

    摘要翻译: 本发明包括电化学处理半导体衬底的方法。 本发明包括电镀物质的方法。 提供了具有限定的第一和第二区域的基板。 第一和第二区域可以由单个掩模限定,因此可以被认为是相对于彼此自对准的。 在第一区域上形成第一导电材料,并且在第二区域上形成第二导电材料。 第一和第二导电材料暴露于电解溶液,同时向第一和第二导电材料提供电流。 在将第一和第二导电材料暴露于电解液期间,期望的物质选择性地电镀到第一导电材料上。 本发明还包括形成电容器结构的方法。

    Method of forming a metal-containing layer over selected regions of a semiconductor substrate
    3.
    发明授权
    Method of forming a metal-containing layer over selected regions of a semiconductor substrate 有权
    在半导体衬底的选定区域上形成含金属层的方法

    公开(公告)号:US07179716B2

    公开(公告)日:2007-02-20

    申请号:US11054130

    申请日:2005-02-08

    IPC分类号: H01L21/76

    摘要: The invention includes methods of electrochemically treating semiconductor substrates. The invention includes a method of electroplating a substance. A substrate having defined first and second regions is provided. The first and second regions can be defined by a single mask, and accordingly can be considered to be self-aligned relative to one another. A first electrically conductive material is formed over the first region, and a second electrically conductive material is formed over the second region. The first and second electrically conductive materials are exposed to an electrolytic solution while providing electrical current to the first and second electrically conductive materials. A desired substance is selectively electroplated onto the first electrically conductive material during the exposing of the first and second electrically conductive materials to the electrolytic solution. The invention also includes methods of forming capacitor constructions.

    摘要翻译: 本发明包括电化学处理半导体衬底的方法。 本发明包括电镀物质的方法。 提供了具有限定的第一和第二区域的基板。 第一和第二区域可以由单个掩模限定,因此可以被认为是相对于彼此自对准的。 在第一区域上形成第一导电材料,并且在第二区域上形成第二导电材料。 第一和第二导电材料暴露于电解溶液,同时向第一和第二导电材料提供电流。 在将第一和第二导电材料暴露于电解液期间,期望的物质选择性地电镀到第一导电材料上。 本发明还包括形成电容器结构的方法。

    Method of selectively removing conductive material
    4.
    发明授权
    Method of selectively removing conductive material 有权
    选择性去除导电材料的方法

    公开(公告)号:US08603318B2

    公开(公告)日:2013-12-10

    申请号:US13098572

    申请日:2011-05-02

    IPC分类号: C25F3/16

    摘要: An electrolyte solution, methods, and systems for selectively removing a conductive metal from a substrate are provided. The electrolyte solution comprising nanoparticles that are more noble than the conductive metal being removed, is applied to a substrate to remove the conductive metal selectively relative to a dielectric material without application of an external potential or contact of a processing pad with a surface of the substrate. The solutions and methods can be applied, for example, to remove a conductive metal layer (e.g., barrier metal) selectively relative to a dielectric material and to a materially different conductive metal (e.g., copper interconnect) without application of an external potential or contact of a processing pad with the surface of the substrate.

    摘要翻译: 提供了一种用于从衬底选择性地去除导电金属的电解质溶液,方法和系统。 将包含比被除去的导电金属更高的纳米颗粒的电解质溶液施加到基底上以相对于介电材料选择性地去除导电金属,而不施加外部电位或处理垫与基底的表面的接触 。 解决方案和方法可以应用于例如相对于电介质材料选择性去除导电金属层(例如,阻挡金属),并且可以应用于物理上不同的导电金属(例如,铜互连)而不施加外部电位或接触 具有衬底表面的处理衬垫。

    Method of selectively removing conductive material
    5.
    发明授权
    Method of selectively removing conductive material 有权
    选择性去除导电材料的方法

    公开(公告)号:US07935242B2

    公开(公告)日:2011-05-03

    申请号:US11507291

    申请日:2006-08-21

    IPC分类号: C25F3/16

    摘要: An electrolyte solution, methods, and systems for selectively removing a conductive metal from a substrate are provided. The electrolyte solution comprising nanoparticles that are more noble than the conductive metal being removed, is applied to a substrate to remove the conductive metal selectively relative to a dielectric material without application of an external potential or contact of a processing pad with the surface of the substrate. The solutions and methods can be applied, for example, to remove a conductive metal layer (e.g., barrier metal) selectively relative to dielectric material and to a materially different conductive metal (e.g., copper interconnect) without application of an external potential or contact of a processing pad with the surface of the substrate.

    摘要翻译: 提供了一种用于从衬底选择性地去除导电金属的电解质溶液,方法和系统。 将包含比被除去的导电金属更贵的纳米颗粒的电解质溶液施加到基板上以相对于电介质材料选择性地去除导电金属,而不施加外部电位或处理垫与基板表面的接触 。 解决方案和方法可以应用于例如相对于电介质材料选择性地去除导电金属层(例如阻挡金属),并且可以应用于物理上不同的导电金属(例如,铜互连),而不施加外部电位或接触 具有衬底表面的处理衬垫。

    Methods of forming capacitor constructions
    6.
    发明授权
    Methods of forming capacitor constructions 失效
    形成电容器结构的方法

    公开(公告)号:US06984301B2

    公开(公告)日:2006-01-10

    申请号:US10199736

    申请日:2002-07-18

    IPC分类号: C25D5/02 C25D7/06 H01L21/8242

    摘要: The invention includes methods of electrochemically treating semiconductor substrates. The invention includes a method of electroplating a substance. A substrate having defined first and second regions is provided. The first and second regions can be defined by a single mask, and accordingly can be considered to be self-aligned relative to one another. A first electrically conductive material is formed over the first region, and a second electrically conductive material is formed over the second region. The first and second electrically conductive materials are exposed to an electrolytic solution while providing electrical current to the first and second electrically conductive materials. A desired substance is selectively electroplated onto the first electrically conductive material during the exposing of the first and second electrically conductive materials to the electrolytic solution. The invention also includes methods of forming capacitor constructions.

    摘要翻译: 本发明包括电化学处理半导体衬底的方法。 本发明包括电镀物质的方法。 提供了具有限定的第一和第二区域的基板。 第一和第二区域可以由单个掩模限定,因此可以被认为是相对于彼此自对准的。 在第一区域上形成第一导电材料,并且在第二区域上形成第二导电材料。 第一和第二导电材料暴露于电解溶液,同时向第一和第二导电材料提供电流。 在将第一和第二导电材料暴露于电解液期间,期望的物质选择性地电镀到第一导电材料上。 本发明还包括形成电容器结构的方法。

    Method of Selectively Removing Conductive Material
    7.
    发明申请
    Method of Selectively Removing Conductive Material 有权
    选择性去除导电材料的方法

    公开(公告)号:US20110203940A1

    公开(公告)日:2011-08-25

    申请号:US13098572

    申请日:2011-05-02

    IPC分类号: C25F3/02 C25B9/00

    摘要: An electrolyte solution, methods, and systems for selectively removing a conductive metal from a substrate are provided. The electrolyte solution comprising nanoparticles that are more noble than the conductive metal being removed, is applied to a substrate to remove the conductive metal selectively relative to a dielectric material without application of an external potential or contact of a processing pad with the surface of the substrate. The solutions and methods can be applied, for example, to remove a conductive metal layer (e.g., barrier metal) selectively relative to dielectric material and to a materially different conductive metal (e.g., copper interconnect) without application of an external potential or contact of a processing pad with the surface of the substrate.

    摘要翻译: 提供了一种用于从衬底选择性地去除导电金属的电解质溶液,方法和系统。 将包含比被除去的导电金属更贵的纳米颗粒的电解质溶液施加到基板上以相对于电介质材料选择性地去除导电金属,而不施加外部电位或处理垫与基板表面的接触 。 解决方案和方法可以应用于例如相对于电介质材料选择性地去除导电金属层(例如阻挡金属),并且可以应用于物理上不同的导电金属(例如,铜互连),而不施加外部电位或接触 具有衬底表面的处理衬垫。

    Methods of electrochemically treating semiconductor substrates
    8.
    发明授权
    Methods of electrochemically treating semiconductor substrates 有权
    电化学处理半导体衬底的方法

    公开(公告)号:US07375014B2

    公开(公告)日:2008-05-20

    申请号:US11053778

    申请日:2005-02-08

    IPC分类号: H01L21/20

    摘要: The invention includes methods of electrochemically treating semiconductor substrates. The invention includes a method of electroplating a substance. A substrate having defined first and second regions is provided. The first and second regions can be defined by a single mask, and accordingly can be considered to be self-aligned relative to one another. A first electrically conductive material is formed over the first region, and a second electrically conductive material is formed over the second region. The first and second electrically conductive materials are exposed to an electrolytic solution while providing electrical current to the first and second electrically conductive materials. A desired substance is selectively electroplated onto the first electrically conductive material during the exposing of the first and second electrically conductive materials to the electrolytic solution. The invention also includes methods of forming capacitor constructions.

    摘要翻译: 本发明包括电化学处理半导体衬底的方法。 本发明包括电镀物质的方法。 提供了具有限定的第一和第二区域的基板。 第一和第二区域可以由单个掩模限定,因此可以被认为是相对于彼此自对准的。 在第一区域上形成第一导电材料,并且在第二区域上形成第二导电材料。 第一和第二导电材料暴露于电解溶液,同时向第一和第二导电材料提供电流。 在将第一和第二导电材料暴露于电解液期间,期望的物质选择性地电镀到第一导电材料上。 本发明还包括形成电容器结构的方法。

    Methods of forming capacitor constructions
    9.
    发明授权
    Methods of forming capacitor constructions 有权
    形成电容器结构的方法

    公开(公告)号:US07348234B2

    公开(公告)日:2008-03-25

    申请号:US11053816

    申请日:2005-02-08

    IPC分类号: H01L21/8242

    摘要: The invention includes methods of electrochemically treating semiconductor substrates. The invention includes a method of electroplating a substance. A substrate having defined first and second regions is provided. The first and second regions can be defined by a single mask, and accordingly can be considered to be self-aligned relative to one another. A first electrically conductive material is formed over the first region, and a second electrically conductive material is formed over the second region. The first and second electrically conductive materials are exposed to an electrolytic solution while providing electrical current to the first and second electrically conductive materials. A desired substance is selectively electroplated onto the first electrically conductive material during the exposing of the first and second electrically conductive materials to the electrolytic solution. The invention also includes methods of forming capacitor constructions.

    摘要翻译: 本发明包括电化学处理半导体衬底的方法。 本发明包括电镀物质的方法。 提供了具有限定的第一和第二区域的基板。 第一和第二区域可以由单个掩模限定,因此可以被认为是相对于彼此自对准的。 在第一区域上形成第一导电材料,并且在第二区域上形成第二导电材料。 第一和第二导电材料暴露于电解溶液,同时向第一和第二导电材料提供电流。 在将第一和第二导电材料暴露于电解液期间,期望的物质选择性地电镀到第一导电材料上。 本发明还包括形成电容器结构的方法。

    Method of selectively removing conductive material
    10.
    发明申请
    Method of selectively removing conductive material 有权
    选择性去除导电材料的方法

    公开(公告)号:US20080041725A1

    公开(公告)日:2008-02-21

    申请号:US11507291

    申请日:2006-08-21

    IPC分类号: B01D35/06

    摘要: An electrolyte solution, methods, and systems for selectively removing a conductive metal from a substrate are provided. The electrolyte solution comprising nanoparticles that are more noble than the conductive metal being removed, is applied to a substrate to remove the conductive metal selectively relative to a dielectric material without application of an external potential or contact of a processing pad with the surface of the substrate. The solutions and methods can be applied, for example, to remove a conductive metal layer (e.g., barrier metal) selectively relative to dielectric material and to a materially different conductive metal (e.g., copper interconnect) without application of an external potential or contact of a processing pad with the surface of the substrate.

    摘要翻译: 提供了一种用于从衬底选择性地去除导电金属的电解质溶液,方法和系统。 将包含比被除去的导电金属更贵的纳米颗粒的电解质溶液施加到基板上以相对于电介质材料选择性地去除导电金属,而不施加外部电位或处理垫与基板表面的接触 。 解决方案和方法可以应用于例如相对于电介质材料选择性地去除导电金属层(例如阻挡金属),并且可以应用于物理上不同的导电金属(例如,铜互连),而不施加外部电位或接触 具有衬底表面的处理衬垫。