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公开(公告)号：US08603318B2
公开(公告)日：2013-12-10
申请号：US13098572
申请日：2011-05-02
IPC分类号： C25F3/16
CPC分类号： H01L21/67086 , B82Y30/00 , C23F1/02 , C23F1/10 , H01B1/122 , H01L21/32115 , H01L21/67075
摘要： An electrolyte solution, methods, and systems for selectively removing a conductive metal from a substrate are provided. The electrolyte solution comprising nanoparticles that are more noble than the conductive metal being removed, is applied to a substrate to remove the conductive metal selectively relative to a dielectric material without application of an external potential or contact of a processing pad with a surface of the substrate. The solutions and methods can be applied, for example, to remove a conductive metal layer (e.g., barrier metal) selectively relative to a dielectric material and to a materially different conductive metal (e.g., copper interconnect) without application of an external potential or contact of a processing pad with the surface of the substrate.
摘要翻译： 提供了一种用于从衬底选择性地去除导电金属的电解质溶液，方法和系统。 将包含比被除去的导电金属更高的纳米颗粒的电解质溶液施加到基底上以相对于介电材料选择性地去除导电金属，而不施加外部电位或处理垫与基底的表面的接触 。 解决方案和方法可以应用于例如相对于电介质材料选择性去除导电金属层（例如，阻挡金属），并且可以应用于物理上不同的导电金属（例如，铜互连）而不施加外部电位或接触 具有衬底表面的处理衬垫。
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公开(公告)号：US07935242B2
公开(公告)日：2011-05-03
申请号：US11507291
申请日：2006-08-21
IPC分类号： C25F3/16
CPC分类号： H01L21/67086 , B82Y30/00 , C23F1/02 , C23F1/10 , H01B1/122 , H01L21/32115 , H01L21/67075
摘要： An electrolyte solution, methods, and systems for selectively removing a conductive metal from a substrate are provided. The electrolyte solution comprising nanoparticles that are more noble than the conductive metal being removed, is applied to a substrate to remove the conductive metal selectively relative to a dielectric material without application of an external potential or contact of a processing pad with the surface of the substrate. The solutions and methods can be applied, for example, to remove a conductive metal layer (e.g., barrier metal) selectively relative to dielectric material and to a materially different conductive metal (e.g., copper interconnect) without application of an external potential or contact of a processing pad with the surface of the substrate.
摘要翻译： 提供了一种用于从衬底选择性地去除导电金属的电解质溶液，方法和系统。 将包含比被除去的导电金属更贵的纳米颗粒的电解质溶液施加到基板上以相对于电介质材料选择性地去除导电金属，而不施加外部电位或处理垫与基板表面的接触 。 解决方案和方法可以应用于例如相对于电介质材料选择性地去除导电金属层（例如阻挡金属），并且可以应用于物理上不同的导电金属（例如，铜互连），而不施加外部电位或接触 具有衬底表面的处理衬垫。
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公开(公告)号：US20110203940A1
公开(公告)日：2011-08-25
申请号：US13098572
申请日：2011-05-02
CPC分类号： H01L21/67086 , B82Y30/00 , C23F1/02 , C23F1/10 , H01B1/122 , H01L21/32115 , H01L21/67075
摘要： An electrolyte solution, methods, and systems for selectively removing a conductive metal from a substrate are provided. The electrolyte solution comprising nanoparticles that are more noble than the conductive metal being removed, is applied to a substrate to remove the conductive metal selectively relative to a dielectric material without application of an external potential or contact of a processing pad with the surface of the substrate. The solutions and methods can be applied, for example, to remove a conductive metal layer (e.g., barrier metal) selectively relative to dielectric material and to a materially different conductive metal (e.g., copper interconnect) without application of an external potential or contact of a processing pad with the surface of the substrate.
摘要翻译： 提供了一种用于从衬底选择性地去除导电金属的电解质溶液，方法和系统。 将包含比被除去的导电金属更贵的纳米颗粒的电解质溶液施加到基板上以相对于电介质材料选择性地去除导电金属，而不施加外部电位或处理垫与基板表面的接触 。 解决方案和方法可以应用于例如相对于电介质材料选择性地去除导电金属层（例如阻挡金属），并且可以应用于物理上不同的导电金属（例如，铜互连），而不施加外部电位或接触 具有衬底表面的处理衬垫。
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公开(公告)号：US20080041725A1
公开(公告)日：2008-02-21
申请号：US11507291
申请日：2006-08-21
IPC分类号： B01D35/06
CPC分类号： H01L21/67086 , B82Y30/00 , C23F1/02 , C23F1/10 , H01B1/122 , H01L21/32115 , H01L21/67075
摘要： An electrolyte solution, methods, and systems for selectively removing a conductive metal from a substrate are provided. The electrolyte solution comprising nanoparticles that are more noble than the conductive metal being removed, is applied to a substrate to remove the conductive metal selectively relative to a dielectric material without application of an external potential or contact of a processing pad with the surface of the substrate. The solutions and methods can be applied, for example, to remove a conductive metal layer (e.g., barrier metal) selectively relative to dielectric material and to a materially different conductive metal (e.g., copper interconnect) without application of an external potential or contact of a processing pad with the surface of the substrate.
摘要翻译： 提供了一种用于从衬底选择性地去除导电金属的电解质溶液，方法和系统。 将包含比被除去的导电金属更贵的纳米颗粒的电解质溶液施加到基板上以相对于电介质材料选择性地去除导电金属，而不施加外部电位或处理垫与基板表面的接触 。 解决方案和方法可以应用于例如相对于电介质材料选择性地去除导电金属层（例如阻挡金属），并且可以应用于物理上不同的导电金属（例如，铜互连），而不施加外部电位或接触 具有衬底表面的处理衬垫。
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5.发明授权Microelectronic substrate cleaning systems with polyelectrolyte and associated methods 失效具有聚电解质和相关方法的微电子基板清洗系统公开(公告)号：US08252119B2
公开(公告)日：2012-08-28
申请号：US12195003
申请日：2008-08-20
IPC分类号： B08B3/08
CPC分类号： B08B3/08 , C11D3/37 , C11D7/06 , C11D11/0047 , H01L21/02057 , H01L21/67051 , H01L21/67057
摘要： Several embodiments of cleaning systems using polyelectrolyte and various associated methods for cleaning microelectronic substrates are disclosed herein. One embodiment is directed to a system that has a substrate support for holding the microelectronic substrate, a dispenser positioned above the substrate support and facing a surface of the microelectronic substrate, a reservoir in fluid communication with the dispenser via a conduit, and a washing solution contained in the reservoir. The washing solution includes a polyelectrolyte.
摘要翻译： 本文公开了使用聚电解质的清洁系统和用于清洁微电子衬底的各种相关方法的几个实施例。 一个实施例涉及一种具有用于保持微电子基板的基板支撑件的系统，位于基板支撑件上方并面向微电子基板的表面的分配器，经由导管与分配器流体连通的储存器和洗涤液 储存在容器中。 洗涤液包括聚电解质。
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6.发明申请MICROELECTRONIC SUBSTRATE CLEANING SYSTEMS WITH POLYELECTROLYTE AND ASSOCIATED METHODS 审中-公开具有聚电解质和相关方法的微电子基板清洗系统公开(公告)号：US20120298158A1
公开(公告)日：2012-11-29
申请号：US13570033
申请日：2012-08-08
CPC分类号： B08B3/08 , C11D3/37 , C11D7/06 , C11D11/0047 , H01L21/02057 , H01L21/67051 , H01L21/67057
摘要： Several embodiments of cleaning systems using polyelectrolyte and various associated methods for cleaning microelectronic substrates are disclosed herein. One embodiment is directed to a system that has a substrate support for holding the microelectronic substrate, a dispenser positioned above the substrate support and facing a surface of the microelectronic substrate, a reservoir in fluid communication with the dispenser via a conduit, and a washing solution contained in the reservoir. The washing solution includes a polyelectrolyte.
摘要翻译： 本文公开了使用聚电解质的清洁系统和用于清洁微电子衬底的各种相关方法的几个实施例。 一个实施例涉及一种具有用于保持微电子基板的基板支撑件的系统，位于基板支撑件上方并面向微电子基板的表面的分配器，经由导管与分配器流体连通的储存器和洗涤液 储存在容器中。 洗涤液包括聚电解质。
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7.发明申请METHODS OF UNIFORMLY REMOVING SILICON OXIDE AND AN INTERMEDIATE SEMICONDUCTOR DEVICE 有权均匀除去氧化硅和中间半导体器件的方法公开(公告)号：US20100295148A1
公开(公告)日：2010-11-25
申请号：US12850441
申请日：2010-08-04
IPC分类号： H01L21/762 , H01L29/06
CPC分类号： H01L21/31116 , H01L21/76229 , H01L21/823412 , H01L21/823481 , H01L27/11521 , H01L29/7846 , Y10S438/911
摘要： A method of substantially uniformly removing silicon oxide is disclosed. The silicon oxide to be removed includes at least one cavity therein or more than one density or strain therein. The silicon oxide having at least one cavity or more than one density or strain is exposed to a gaseous mixture of NH3 and HF and heated, to substantially uniformly remove the silicon oxide. A method of removing an exposed sacrificial layer without substantially removing exposed isolation regions using the gaseous mixture of NH3 and HF and heat is also disclosed, as is an intermediate semiconductor device structure that includes a semiconductor substrate, a sacrificial layer overlying the semiconductor substrate, a diffusion barrier overlying the sacrificial layer, and exposed isolation regions.
摘要翻译： 公开了一种基本均匀地去除氧化硅的方法。 要除去的氧化硅包括其中至少一个空腔或其中的多于一个密度或应变。 具有至少一个空腔或多于一个密度或应变的氧化硅暴露于NH 3和HF的气体混合物中并加热，以基本均匀地除去氧化硅。 还公开了使用NH 3和HF的气体混合物和热量基本上去除暴露的隔离区域去除暴露的牺牲层的方法，中间半导体器件结构包括半导体衬底，覆盖半导体衬底的牺牲层， 覆盖牺牲层的扩散阻挡层和暴露的隔离区域。
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8.发明授权Methods of uniformly removing silicon oxide and an intermediate semiconductor device 有权均匀去除氧化硅和中间半导体器件的方法公开(公告)号：US08435904B2
公开(公告)日：2013-05-07
申请号：US12850441
申请日：2010-08-04
IPC分类号： H01L21/302 , H01L21/461
CPC分类号： H01L21/31116 , H01L21/76229 , H01L21/823412 , H01L21/823481 , H01L27/11521 , H01L29/7846 , Y10S438/911
摘要： A method of substantially uniformly removing silicon oxide is disclosed. The silicon oxide to be removed includes at least one cavity therein or more than one density or strain therein. The silicon oxide having the at least one cavity or more than one density or strain is exposed to a gaseous mixture of NH3 and HF and heated, to substantially uniformly remove the silicon oxide. A method of removing an exposed sacrificial layer without substantially removing exposed isolation regions using the gaseous mixture of NH3 and HF and heat is also disclosed, as is an intermediate semiconductor device structure that includes a semiconductor substrate, a sacrificial layer overlying the semiconductor substrate, a diffusion barrier overlying the sacrificial layer, and exposed isolation regions.
摘要翻译： 公开了一种基本均匀地去除氧化硅的方法。 要除去的氧化硅包括其中至少一个空腔或其中的多于一个密度或应变。 将具有至少一个空腔或多于一个密度或应变的氧化硅暴露于NH 3和HF的气体混合物并加热，以基本均匀地除去氧化硅。 还公开了使用NH 3和HF的气体混合物和热量基本上去除暴露的隔离区域去除暴露的牺牲层的方法，中间半导体器件结构包括半导体衬底，覆盖半导体衬底的牺牲层， 覆盖牺牲层的扩散阻挡层和暴露的隔离区域。
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9.发明授权Methods of uniformly removing silicon oxide and a method of removing a sacrificial oxide 有权均匀去除氧化硅的方法和去除牺牲氧化物的方法公开(公告)号：US07786016B2
公开(公告)日：2010-08-31
申请号：US11652218
申请日：2007-01-11
IPC分类号： H01L21/302 , H01L21/461
CPC分类号： H01L21/31116 , H01L21/76229 , H01L21/823412 , H01L21/823481 , H01L27/11521 , H01L29/7846 , Y10S438/911
摘要： A method of substantially uniformly removing silicon oxide is disclosed. The silicon oxide to be removed includes at least one cavity therein or more than one density or strain therein. The silicon oxide having at least one cavity or more than one density or strain is exposed to a gaseous mixture of NH3 and HF and heated, to substantially uniformly remove the silicon oxide. A method of removing an exposed sacrificial layer without substantially removing exposed isolation regions using the gaseous mixture of NH3 and HF and heat is also disclosed, as is an intermediate semiconductor device structure that includes a semiconductor substrate, a sacrificial layer overlying the semiconductor substrate, a diffusion barrier overlying the sacrificial layer, and exposed isolation regions.
摘要翻译： 公开了一种基本均匀地去除氧化硅的方法。 要除去的氧化硅包括其中至少一个空腔或其中的多于一个密度或应变。 具有至少一个空腔或多于一个密度或应变的氧化硅暴露于NH 3和HF的气体混合物中并加热，以基本均匀地除去氧化硅。 还公开了使用NH 3和HF的气体混合物和热量基本上去除暴露的隔离区域去除暴露的牺牲层的方法，中间半导体器件结构包括半导体衬底，覆盖半导体衬底的牺牲层， 覆盖牺牲层的扩散阻挡层和暴露的隔离区域。
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10.发明申请MICROELECTRONIC SUBSTRATE CLEANING SYSTEMS WITH POLYELECTROLYTE AND ASSOCIATED METHODS 失效具有聚电解质和相关方法的微电子基板清洗系统公开(公告)号：US20100043824A1
公开(公告)日：2010-02-25
申请号：US12195003
申请日：2008-08-20
IPC分类号： B08B3/00
CPC分类号： B08B3/08 , C11D3/37 , C11D7/06 , C11D11/0047 , H01L21/02057 , H01L21/67051 , H01L21/67057
摘要： Several embodiments of cleaning systems using polyelectrolyte and various associated methods for cleaning microelectronic substrates are disclosed herein. One embodiment is directed to a system that has a substrate support for holding the microelectronic substrate, a dispenser positioned above the substrate support and facing a surface of the microelectronic substrate, a reservoir in fluid communication with the dispenser via a conduit, and a washing solution contained in the reservoir. The washing solution includes a polyelectrolyte.
摘要翻译： 本文公开了使用聚电解质的清洁系统和用于清洁微电子衬底的各种相关方法的几个实施例。 一个实施例涉及一种具有用于保持微电子基板的基板支撑件的系统，位于基板支撑件上方并面向微电子基板的表面的分配器，经由导管与分配器流体连通的储存器和洗涤液 储存在容器中。 洗涤液包括聚电解质。
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