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    ENHANCED BONDING INTERFACES ON CARBON-BASED MATERIALS FOR NANOELECTRONIC DEVICES
    6.
    发明申请
    ENHANCED BONDING INTERFACES ON CARBON-BASED MATERIALS FOR NANOELECTRONIC DEVICES 审中-公开
    用于纳米电子设备的碳基材料的增强接合界面

    公开(公告)号：US20110233513A1

    公开(公告)日：2011-09-29

    申请号：US12748542

    申请日：2010-03-29

    申请人： Christos D. Dimitrakopoulos ,  Damon B. Farmer ,  Alfred Grill ,  Stephen M. Gates ,  Tuan A. Vo ,  Deborah A. Neumayer ,  Son Van Nguyen

    发明人： Christos D. Dimitrakopoulos ,  Damon B. Farmer ,  Alfred Grill ,  Stephen M. Gates ,  Tuan A. Vo ,  Deborah A. Neumayer ,  Son Van Nguyen

    IPC分类号： H01L29/16 ,  H01L21/04 ,  C30B23/02

    CPC分类号： H01L29/1606 ,  H01L29/7781 ,  H01L29/78 ,  H01L29/7831

    摘要： Semiconductor structures and electronic devices are provided that includes at least one layer of an interfacial dielectric material located on an upper surface of a carbon-based material. The at least one layer of interfacial dielectric material has a short-range crystallographic bonding structure, typically hexagonal, that is the same as that of the carbon-based material and, as such, the at least one layer of interfacial dielectric material does not change the electronic structure of the carbon-based material. The presence of the at least one layer of interfacial dielectric material having the same short-range crystallographic bonding structure as that of the carbon-based material improves the interfacial bonding between the carbon-based material and any overlying material layer, including a dielectric material, a conductive material or a combination of a dielectric material and a conductive material. The improved interfacial bonding in turn facilitates formation of devices including a carbon-based material.

    摘要翻译： 提供半导体结构和电子器件，其包括位于碳基材料的上表面上的至少一层界面介电材料层。 所述至少一层界面介电材料具有与碳基材料相同的短程结晶结合结构，通常是六边形，因此至少一层界面介电材料不会改变 碳基材料的电子结构。 具有与碳基材料相同的短程结晶结合结构的至少一层界面介电材料的存在改善了碳基材料和任何覆盖材料层（包括介电材料）之间的界面结合， 导电材料或介电材料和导电材料的组合。 改进的界面结合又有助于形成包括碳基材料的装置。

    SiCOH film preparation using precursors with built-in porogen functionality
    7.
    发明授权
    SiCOH film preparation using precursors with built-in porogen functionality 有权
    使用具有内置致孔剂功能的前体的SiCOH膜制备

    公开(公告)号：US07915180B2

    公开(公告)日：2011-03-29

    申请号：US12425843

    申请日：2009-04-17

    申请人： Stephen M. Gates ,  Alfred Grill ,  Robert D. Miller ,  Deborah A. Neumayer ,  Son Nguyen

    发明人： Stephen M. Gates ,  Alfred Grill ,  Robert D. Miller ,  Deborah A. Neumayer ,  Son Nguyen

    IPC分类号： H01L21/31 ,  H01L21/469

    CPC分类号： H01L21/31695 ,  B05D1/60 ,  C23C16/30 ,  C23C16/56 ,  H01L21/02126 ,  H01L21/02203 ,  H01L21/02216 ,  H01L21/02274 ,  H01L21/02282 ,  H01L21/02337 ,  H01L21/02348 ,  H01L21/02351

    摘要： A method of fabricating a dielectric material that has an ultra low dielectric constant (or ultra low k) using at least one organosilicon precursor is described. The organosilicon precursor employed in the present invention includes a molecule containing both an Si—O structure and a sacrificial organic group, as a leaving group. The use of an organosilicon precursor containing a molecular scale sacrificial leaving group enables control of the pore size at the nanometer scale, control of the compositional and structural uniformity and simplifies the manufacturing process. Moreover, fabrication of a dielectric film from a single precursor enables better control of the final porosity in the film and a narrower pore size distribution resulting in better mechanical properties at the same value of dielectric constant.

    摘要翻译： 描述了使用至少一种有机硅前体制造具有超低介电常数（或超低k）的介电材料的方法。 本发明中使用的有机硅前体包括含有Si-O结构和牺牲有机基团的分子作为离去基团。 使用含有分子尺度牺牲离去基团的有机硅前体使得能够控制纳米尺度的孔径，控制组成和结构均匀性并简化制造过程。 此外，从单一前体制造电介质膜能够更好地控制膜中的最终孔隙率和较窄的孔径分布，导致在相同的介电常数值下更好的机械性能。

    SiCOH FILM PREPARATION USING PRECURSORS WITH BUILT-IN POROGEN FUNCTIONALITY
    8.
    发明申请
    SiCOH FILM PREPARATION USING PRECURSORS WITH BUILT-IN POROGEN FUNCTIONALITY 有权
    使用前驱体与内置多孔功能的SiCOH膜制备

    公开(公告)号：US20090203225A1

    公开(公告)日：2009-08-13

    申请号：US12425843

    申请日：2009-04-17

    申请人： Stephen M. Gates ,  Alfred Grill ,  Robert D. Miller ,  Deborah A. Neumayer ,  Son Nguyen

    发明人： Stephen M. Gates ,  Alfred Grill ,  Robert D. Miller ,  Deborah A. Neumayer ,  Son Nguyen

    IPC分类号： H01L21/34

    CPC分类号： H01L21/31695 ,  B05D1/60 ,  C23C16/30 ,  C23C16/56 ,  H01L21/02126 ,  H01L21/02203 ,  H01L21/02216 ,  H01L21/02274 ,  H01L21/02282 ,  H01L21/02337 ,  H01L21/02348 ,  H01L21/02351

    摘要： A method of fabricating a dielectric material that has an ultra low dielectric constant (or ultra low k) using at least one organosilicon precursor is described. The organosilicon precursor employed in the present invention includes a molecule containing both an Si—O structure and a sacrificial organic group, as a leaving group. The use of an organosilicon precursor containing a molecular scale sacrificial leaving group enables control of the pore size at the nanometer scale, control of the compositional and structural uniformity and simplifies the manufacturing process. Moreover, fabrication of a dielectric film from a single precursor enables better control of the final porosity in the film and a narrower pore size distribution resulting in better mechanical properties at the same value of dielectric constant.

    摘要翻译： 描述了使用至少一种有机硅前体制造具有超低介电常数（或超低k）的介电材料的方法。 本发明中使用的有机硅前体包括含有Si-O结构和牺牲有机基团的分子作为离去基团。 使用含有分子尺度牺牲离去基团的有机硅前体使得能够控制纳米尺度的孔径，控制组成和结构均匀性并简化制造过程。 此外，从单一前体制造电介质膜能够更好地控制膜中的最终孔隙率和较窄的孔径分布，导致在相同的介电常数值下更好的机械性能。

    SiCOH film preparation using precursors with built-in porogen functionality
    9.
    发明授权
    SiCOH film preparation using precursors with built-in porogen functionality 有权
    使用具有内置致孔剂功能的前体的SiCOH膜制备

    公开(公告)号：US07521377B2

    公开(公告)日：2009-04-21

    申请号：US11329560

    申请日：2006-01-11

    申请人： Stephen M. Gates ,  Alfred Grill ,  Robert D. Miller ,  Deborah A. Neumayer ,  Son Nguyen

    发明人： Stephen M. Gates ,  Alfred Grill ,  Robert D. Miller ,  Deborah A. Neumayer ,  Son Nguyen

    IPC分类号： H01L21/31 ,  H01L21/469

    CPC分类号： H01L21/31695 ,  B05D1/60 ,  C23C16/30 ,  C23C16/56 ,  H01L21/02126 ,  H01L21/02203 ,  H01L21/02216 ,  H01L21/02274 ,  H01L21/02282 ,  H01L21/02337 ,  H01L21/02348 ,  H01L21/02351

    摘要： A method of fabricating a dielectric material that has an ultra low dielectric constant (or ultra low k) using at least one organosilicon precursor is described. The organosilicon precursor employed in the present invention includes a molecule containing both an Si—O structure and a sacrificial organic group, as a leaving group. The use of an organosilicon precursor containing a molecular scale sacrificial leaving group enables control of the pore size at the nanometer scale, control of the compositional and structural uniformity and simplifies the manufacturing process. Moreover, fabrication of a dielectric film from a single precursor enables better control of the final porosity in the film and a narrower pore size distribution resulting in better mechanical properties at the same value of dielectric constant.

    摘要翻译： 描述了使用至少一种有机硅前体制造具有超低介电常数（或超低k）的介电材料的方法。 本发明中使用的有机硅前体包括含有Si-O结构和牺牲有机基团的分子作为离去基团。 使用含有分子尺度牺牲离去基团的有机硅前体使得能够控制纳米尺度的孔径，控制组成和结构均匀性并简化制造过程。 此外，从单一前体制造电介质膜能够更好地控制膜中的最终孔隙率和较窄的孔径分布，导致在相同的介电常数值下更好的机械性能。

    Ultra low k plasma enhanced chemical vapor deposition processes using a single bifunctional precursor containing both a SiCOH matrix functionality and organic porogen functionality
    10.
    发明授权
    Ultra low k plasma enhanced chemical vapor deposition processes using a single bifunctional precursor containing both a SiCOH matrix functionality and organic porogen functionality 失效
    使用含有SiCOH基质官能团和有机致孔剂功能的单一双功能前体的超低k等离子体增强化学气相沉积方法

    公开(公告)号：US07491658B2

    公开(公告)日：2009-02-17

    申请号：US10964254

    申请日：2004-10-13

    申请人： Son Van Nguyen ,  Stephen McConnell Gates ,  Deborah A. Neumayer ,  Alfred Grill

    发明人： Son Van Nguyen ,  Stephen McConnell Gates ,  Deborah A. Neumayer ,  Alfred Grill

    IPC分类号： H01L21/31

    CPC分类号： C23C16/401 ,  H01L21/02126 ,  H01L21/02216 ,  H01L21/02274 ,  H01L21/02337 ,  H01L21/0234 ,  H01L21/02348 ,  H01L21/02351 ,  H01L21/02362 ,  H01L21/3122 ,  H01L21/31633 ,  H01L21/31695 ,  Y10T428/249921

    摘要： A method for fabricating a SiCOH dielectric material comprising Si, C, O and H atoms from a single organosilicon precursor with a built-in organic porogen is provided. The single organosilicon precursor with a built-in organic porogen is selected from silane (SiH4) derivatives having the molecular formula SiRR1R2R3, disiloxane derivatives having the molecular formula R4R5R6—Si—O—Si—R7R8R9, and trisiloxane derivatives having the molecular formula R10R11R12—Si—O—Si—R13R14—O—Si—R15R16R17 where R and R1-17 may or may not be identical and are selected from H, alkyl, alkoxy, epoxy, phenyl, vinyl, allyl, alkenyl or alkynyl groups that may be linear, branched, cyclic, polycyclic and may be functionalized with oxygen, nitrogen or fluorine containing substituents. In addition to the method, the present application also provides SiCOH dielectrics made from the inventive method as well as electronic structures that contain the same.

    摘要翻译： 提供了由具有内置有机致孔剂的单一有机硅前体制备包含Si，C，O和H原子的SiCOH电介质材料的方法。 具有内置有机致孔剂的单一有机硅前体选自具有分子式SiRR1R2R3的硅烷（SiH4）衍生物，具有分子式为R4R5R6-Si-O-Si-R7R8R9的二硅氧烷衍生物和分子式为R10R11R12- Si-O-Si-R13R14-O-Si-R15R16R17其中R和R1-17可以相同也可以不相同，并且可以选自H，烷基，烷氧基，环氧基，苯基，乙烯基，烯丙基，烯基或炔基， 直链，支链，环状，多环，并且可以被含氧，含氮或氟的取代基官能化。 除了该方法之外，本申请还提供了由本发明方法制备的SiCOH电介质以及含有该SiCOH的电子结构。