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    Plasma chamber having multiple RF source frequencies
    1.
    发明申请
    Plasma chamber having multiple RF source frequencies 审中-公开
    等离子室具有多个RF源频率

    公开(公告)号：US20050106873A1

    公开(公告)日：2005-05-19

    申请号：US10890034

    申请日：2004-07-12

    申请人： Daniel Hoffman ,  Diana Ma ,  Yan Ye ,  Jang Yang

    发明人： Daniel Hoffman ,  Diana Ma ,  Yan Ye ,  Jang Yang

    IPC分类号： H01L21/205 ,  H01J37/32 ,  H01L21/00 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/461 ,  H05H1/00

    CPC分类号： H01J37/32165 ,  H01J37/32091

    摘要： A method and apparatus for processing a semiconductor substrate is disclosed. A plasma reactor has a capacitive electrode driven by a plurality of RF power sources, and the electrode capacitance is matched at the desired plasma density and RF source frequency to the negative capacitance of the plasma, to provide an electrode plasma resonance supportive of a broad process window within which the plasma may be sustained.

    摘要翻译： 公开了一种用于处理半导体衬底的方法和设备。 等离子体反应器具有由多个RF电源驱动的电容电极，并且电极电容以期望的等离子体密度和RF源频率匹配到等离子体的负电容，以提供支持广泛过程的电极等离子体共振 可以维持等离子体的窗口。

    Capacitively coupled plasma reactor with magnetic plasma control
    2.
    发明申请
    Capacitively coupled plasma reactor with magnetic plasma control 有权
    具有磁等离子体控制的电容耦合等离子体反应器

    公开(公告)号：US20060157201A1

    公开(公告)日：2006-07-20

    申请号：US11360944

    申请日：2006-02-23

    申请人： Daniel Hoffman ,  Matthew Miller ,  Jang Yang ,  Heeyeop Chae ,  Michael Barnes ,  Tetsuya Ishikawa ,  Yan Ye

    发明人： Daniel Hoffman ,  Matthew Miller ,  Jang Yang ,  Heeyeop Chae ,  Michael Barnes ,  Tetsuya Ishikawa ,  Yan Ye

    IPC分类号： C23F1/00

    CPC分类号： H01J37/32091 ,  H01J37/3244 ,  H01J37/32623 ,  H01J37/3266

    摘要： A plasma reactor includes a vacuum enclosure including a side wall and a ceiling defining a vacuum chamber, and a workpiece support within the chamber and facing the ceiling for supporting a planar workpiece, the workpiece support and the ceiling together defining a processing region between the workpiece support and the ceiling. Process gas inlets furnish a process gas into the chamber. A plasma source power electrode is connected to an RF power generator for capacitively coupling plasma source power into the chamber for maintaining a plasma within the chamber. The reactor further includes at least a first overhead solenoidal electromagnet adjacent the ceiling, the overhead solenoidal electromagnet, the ceiling, the side wall and the workpiece support being located along a common axis of symmetry. A current source is connected to the first solenoidal electromagnet and furnishes a first electric current in the first solenoidal electromagnet whereby to generate within the chamber a magnetic field which is a function of the first electric current, the first electric current having a value such that the magnetic field increases uniformity of plasma ion density radial distribution about the axis of symmetry near a surface of the workpiece support.

    摘要翻译： 等离子体反应器包括真空外壳，其包括限定真空室的侧壁和顶板，以及腔室内的工件支撑件，并面向天花板以支撑平面工件，工件支撑件和天花板一起限定了工件之间的加工区域 支持和天花板。 工艺气体入口将工艺气体提供到腔室中。 等离子体源功率电极连接到RF功率发生器，用于将等离子体源功率电容耦合到腔室中，以在腔室内维持等离子体。 反应器还包括至少第一架空螺线管电磁体，靠近天花板，架空螺线管电磁体，天花板，侧壁和工件支撑件沿着共同的对称轴线定位。 电流源连接到第一螺线管电磁体并且在第一螺线管电磁体中提供第一电流，从而在腔室内产生与第一电流有关的磁场，第一电流具有使得 磁场增加等离子体离子密度在工件支撑表面附近的对称轴的径向分布的均匀性。

    Capacitively coupled plasma reactor with magnetic plasma control
    3.
    发明申请
    Capacitively coupled plasma reactor with magnetic plasma control 审中-公开
    具有磁等离子体控制的电容耦合等离子体反应器

    公开(公告)号：US20080023143A1

    公开(公告)日：2008-01-31

    申请号：US11881801

    申请日：2007-07-27

    申请人： Daniel Hoffman ,  Matthew Miller ,  Jang Yang ,  Heeyeop Chae ,  Michael Barnes ,  Tetsuya Ishikawa ,  Yan Ye

    发明人： Daniel Hoffman ,  Matthew Miller ,  Jang Yang ,  Heeyeop Chae ,  Michael Barnes ,  Tetsuya Ishikawa ,  Yan Ye

    IPC分类号： H01L21/3065 ,  H01L21/285

    CPC分类号： H01J37/32091 ,  H01J37/3244 ,  H01J37/32623 ,  H01J37/3266

    摘要： A plasma reactor includes a vacuum enclosure including a side wall and a ceiling defining a vacuum chamber, and a workpiece support within the chamber and facing the ceiling for supporting a planar workpiece, the workpiece support and the ceiling together defining a processing region between the workpiece support and the ceiling. Process gas inlets furnish a process gas into the chamber. A plasma source power electrode is connected to an RF power generator for capacitively coupling plasma source power into the chamber for maintaining a plasma within the chamber. The reactor further includes at least a first overhead solenoidal electromagnet adjacent the ceiling, the overhead solenoidal electromagnet, the ceiling, the side wall and the workpiece support being located along a common axis of symmetry.

    摘要翻译： 等离子体反应器包括真空外壳，其包括限定真空室的侧壁和顶板，以及腔室内的工件支撑件，并面向天花板以支撑平面工件，工件支撑件和天花板一起限定了工件之间的加工区域 支持和天花板。 工艺气体入口将工艺气体提供到腔室中。 等离子体源功率电极连接到RF功率发生器，用于将等离子体源功率电容耦合到腔室中，以在腔室内维持等离子体。 反应器还包括至少第一架空螺线管电磁体，靠近天花板，架空螺线管电磁体，天花板，侧壁和工件支撑件沿着共同的对称轴线定位。

    Capacitively coupled plasma reactor with magnetic plasma control
    4.
    发明申请
    Capacitively coupled plasma reactor with magnetic plasma control 审中-公开
    具有磁等离子体控制的电容耦合等离子体反应器

    公开(公告)号：US20050001556A1

    公开(公告)日：2005-01-06

    申请号：US10841116

    申请日：2004-05-07

    申请人： Daniel Hoffman ,  Matthew Miller ,  Jang Yang ,  Heeyeop Chae ,  Michael Barnes ,  Tetsuya Ishikawa ,  Yan Ye

    发明人： Daniel Hoffman ,  Matthew Miller ,  Jang Yang ,  Heeyeop Chae ,  Michael Barnes ,  Tetsuya Ishikawa ,  Yan Ye

    IPC分类号： H01J37/32 ,  H01J7/24

    CPC分类号： H01J37/32091 ,  H01J37/3244 ,  H01J37/32623 ,  H01J37/3266

    摘要： A plasma reactor includes a vacuum enclosure including a side wall and a ceiling defining a vacuum chamber, and a workpiece support within the chamber and facing the ceiling for supporting a planar workpiece, the workpiece support and the ceiling together defining a processing region between the workpiece support and the ceiling. Process gas inlets furnish a process gas into the chamber. A plasma source power electrode is connected to an RF power generator for capacitively coupling plasma source power into the chamber for maintaining a plasma within the chamber. The reactor further includes at least a first overhead solenoidal electromagnet adjacent the ceiling, the overhead solenoidal electromagnet, the ceiling, the side wall and the workpiece support being located along a common axis of symmetry. A current source is connected to the first solenoidal electromagnet and furnishes a first electric current in the first solenoidal electromagnet whereby to generate within the chamber a magnetic field which is a function of the first electric current, the first electric current having a value such that the magnetic field increases uniformity of plasma ion density radial distribution about the axis of symmetry near a surface of the workpiece support.

    摘要翻译： 等离子体反应器包括真空外壳，其包括限定真空室的侧壁和顶板，以及腔室内的工件支撑件，并面向天花板以支撑平面工件，工件支撑件和天花板一起限定了工件之间的加工区域 支持和天花板。 工艺气体入口将工艺气体提供到腔室中。 等离子体源功率电极连接到RF功率发生器，用于将等离子体源功率电容耦合到腔室中，以在腔室内维持等离子体。 反应器还包括至少第一架空螺线管电磁体，靠近天花板，架空螺线管电磁体，天花板，侧壁和工件支撑件沿着共同的对称轴线定位。 电流源连接到第一螺线管电磁体并且在第一螺线管电磁体中提供第一电流，从而在腔室内产生与第一电流有关的磁场，第一电流具有使得 磁场增加等离子体离子密度在工件支撑表面附近的对称轴的径向分布的均匀性。

    Dual bias frequency plasma reactor with feedback control of E.S.C. voltage using wafer voltage measurement at the bias supply output
    6.
    发明申请
    Dual bias frequency plasma reactor with feedback control of E.S.C. voltage using wafer voltage measurement at the bias supply output 有权
    具有E.S.C.反馈控制的双偏压等离子体反应器 电压使用晶圆电压测量在偏置电源输出

    公开(公告)号：US20060256499A1

    公开(公告)日：2006-11-16

    申请号：US11127036

    申请日：2005-05-10

    申请人： Jang Yang ,  Daniel Hoffman ,  Steven Shannon ,  Douglas Burns ,  Wonseok Lee ,  Kwang-Soo Kim

    发明人： Jang Yang ,  Daniel Hoffman ,  Steven Shannon ,  Douglas Burns ,  Wonseok Lee ,  Kwang-Soo Kim

    IPC分类号： H01T23/00

    CPC分类号： H01J37/32706 ,  H01J37/32935 ,  H01L21/6833 ,  Y10T279/23

    摘要： A plasma reactor has a dual frequency plasma RF bias power supply furnishing RF bias power comprising first and second frequency components, f(1), f(2), respectively, and an RF power path having an input end coupled to the plasma RF bias power supply and an output end coupled to the wafer support pedestal, and sensor circuits providing measurement signals representing first and second frequency components of a measured voltage and first and second frequency components of a measured current near the input end of the RF power path. The reactor further includes a processor for providing first and second frequency components of a wafer voltage signal as, respectively, a first sum of the first frequency components of the measured voltage and measured current multiplied by first and second coefficients respectively, and a second sum of the second frequency components of the measured voltage and measured current multiplied by third and fourth coefficients, respectively. A processor produces a D.C. wafer voltage by combining D.C. components of the first and second frequency components of the wafer voltage with an intermodulation correction factor that is the product of the D.C. components of the first and second components of the wafer voltage raised to a selected power and multiplied by a selected coefficient.

    摘要翻译： 等离子体反应器具有双频等离子体RF偏压电源，其分别提供包括第一和第二频率分量f（1），f（2）的RF偏置功率，以及具有耦合到等离子体RF偏置的输入端的RF功率路径 电源和耦合到晶片支撑基座的输出端，以及传感器电路，其提供表示测量电压的第一和第二频率分量以及在RF功率路径的输入端附近的测量电流的第一和第二频率分量的测量信号。 反应器还包括处理器，用于分别提供晶片电压信号的第一和第二频率分量，分别为测量电压的第一频率分量和测量电流乘以第一和第二系数的第一和，以及第二和 测量电压和测量电流的第二频率分量分别乘以第三和第四系数。 处理器通过将晶片电压的第一和第二频率分量的DC分量与作为晶片电压的第一和第二分量的DC分量升高到所选功率的互调校正因子相结合来产生DC晶片电压 并乘以所选系数。

    Plasma reactor overhead source power electrode with low arcing tendency, cylindrical gas outlets and shaped surface
    7.
    发明申请
    Plasma reactor overhead source power electrode with low arcing tendency, cylindrical gas outlets and shaped surface 有权
    等离子体反应堆架空电源电极具有低电弧倾向，圆柱形气体出口和成形表面

    公开(公告)号：US20050178748A1

    公开(公告)日：2005-08-18

    申请号：US11046538

    申请日：2005-01-28

    申请人： Douglas Buchberger ,  Daniel Hoffman ,  Olga Regelman ,  James Carducci ,  Keiji Horioka ,  Jang Yang

    发明人： Douglas Buchberger ,  Daniel Hoffman ,  Olga Regelman ,  James Carducci ,  Keiji Horioka ,  Jang Yang

    IPC分类号： H01J37/32 ,  B23K9/00

    CPC分类号： H01J37/32091 ,  H01J37/32082 ,  H01J37/32174 ,  H01J37/32183 ,  H01J37/3244

    摘要： An overhead gas distribution electrode forming at least a portion of the ceiling of a plasma reactor has a bottom surface facing a processing zone of the reactor. The electrode includes a gas supply manifold for receiving process gas at a supply pressure at a top portion of the electrode and plural pressure-dropping cylindrical orifices extending axially relative to the electrode from the gas supply manifold at one end of each the orifice. A radial gas distribution manifold within the electrode extends radially across the electrode. Plural axially extending high conductance gas flow passages couple the opposite ends of respective ones of the plural pressure-dropping orifices to the radial gas distribution manifold. Plural high conductance cylindrical gas outlet holes are formed in the plasma-facing bottom surface of the electrode and extend axially to the radial gas distribution manifold.

    摘要翻译： 形成等离子体反应器的天花板的至少一部分的顶部气体分配电极具有面向反应器的处理区域的底面。 电极包括用于在电极顶部处的供给压力下接收处理气体的气体供应歧管和在每个孔口的一端处相对于来自气体供应歧管的电极轴向延伸的多个降压圆柱形孔。 电极内的径向气体分布歧管径向延伸穿过电极。 多个轴向延伸的高电导气流通道将多个降压孔中的相应端部的相对端连接到径向气体分配歧管。 在电极的等离子体面向底面中形成多个高电导圆柱形气体出口孔，并且轴向延伸到径向气体分配歧管。