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公开(公告)号：US20060060818A1
公开(公告)日：2006-03-23
申请号：US11208723
申请日：2005-08-23
IPC分类号： H01J7/18
CPC分类号： C01B3/001 , C01B9/08 , C01B13/0285 , C01B25/06 , C01B32/80 , F17C11/00 , F17C11/005 , F17C11/007 , Y02E60/321 , Y02E60/324
摘要： A mixture and method for the storage and delivery of a gas are disclosed herein. In one aspect, there is provided a mixture comprising: an ionic liquid comprising an anion and a cation, at least a portion of the gas that is disposed within and reversibly chemically reacted with the ionic liquid, and optionally an unreacted gas. In another aspect, there is provided a method for delivering a gas from a mixture comprising an ionic liquid and one or more gases comprising: reacting at least a portion of the gas with the ionic liquid to provide the mixture comprising a chemically reacted gas and an ionic liquid and separating the chemically reacted gas from the mixture wherein the chemically reacted gas after the separating step has substantially the same chemical identity as the chemically reacted gas prior to the reacting step.
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2.发明申请Liquid media containing Lewis basic reactive compounds for storage and delivery of Lewis acidic gases 有权含有路易斯碱性反应性化合物的液体介质用于储存和输送路易斯酸性气体公开(公告)号：US20060081482A1
公开(公告)日：2006-04-20
申请号：US10966803
申请日：2004-10-15
IPC分类号： B65B3/00
CPC分类号： F17C11/00 , F17C2223/0123
摘要： This invention relates to an improvement in a low-pressure storage and delivery system for gases having Lewis acidity, particularly hazardous specialty gases such as BF3 and diborane, which are utilized in the electronics industry. The improvement resides in storing the gases in a liquid incorporating a reactive compound having Lewis basicity capable of effecting a reversible reaction between a gas having Lewis acidity. The reactive compound comprises a reactive species that is dissolved, suspended, dispersed, or otherwise mixed with a nonvolatile liquid.
摘要翻译： 本发明涉及用于电子工业中的具有路易斯酸性的气体的低压储存和输送系统的改进，特别是危险特种气体如BF 3和乙硼烷。 改进在于将气体储存在结合有能够在具有路易斯酸度的气体之间实现可逆反应的路易斯碱性的反应性化合物的液体中。 反应性化合物包括溶解，悬浮，分散或以其它方式与非挥发性液体混合的反应性物质。
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3.发明申请Passivating ALD reactor chamber internal surfaces to prevent residue buildup 审中-公开钝化ALD反应器室内表面以防止残留物积聚公开(公告)号：US20060040054A1
公开(公告)日：2006-02-23
申请号：US10920541
申请日：2004-08-18
申请人： Ronald Pearlstein , Bing Ji , Stephen Motika
发明人： Ronald Pearlstein , Bing Ji , Stephen Motika
IPC分类号： C23C16/00
CPC分类号： C23C16/4404
摘要： This invention is directed to an improved method for preventing deposition residue buildup on the internal surfaces of an ALD reactor chamber. In an ALD deposition process, the surfaces of a substrate are treated with an initiating precursor generating a labile atom reactive with a deposition precursor. Excess initiating precursor is removed from the reactor and the substrate surface then is exposed to a deposition precursor reactive with the labile atom under conditions for generating a fugitive reaction product containing the labile atom and leaving a deposition product. The process is repeated generating alternate layers of initiation and deposition precursor reaction products. The improvement in the ALD process resides in passivating the internal surfaces of the reactor by removing labile atoms reactable with either the initiating or deposition precursors prior to effecting ALD deposition.
摘要翻译： 本发明涉及一种用于防止在ALD反应器室的内表面上产生沉积残渣的改进方法。 在ALD沉积工艺中，用起始前体处理底物的表面，产生与沉积前体反应的不稳定的原子。 从反应器中除去过量的引发前体，然后在产生含有不稳定原子的离散反应产物并留下沉积产物的条件下将底物表面暴露于与不稳定原子反应的沉积前体。 该过程重复产生起始和沉积前体反应产物的交替层。 ALD方法的改进在于通过在实现ALD沉积之前去除与起始或沉积前体可反应的不稳定原子来钝化反应器的内表面。
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4.发明申请Unsaturated oxygenated fluorocarbons for selective aniostropic etch applications 审中-公开用于选择性生物蚀刻应用的不饱和含氧碳氟化合物公开(公告)号：US20050011859A1
公开(公告)日：2005-01-20
申请号：US10619911
申请日：2003-07-15
申请人： Bing Ji , Ronald Pearlstein , Robert Syvret , Peter Badowski , Stephen Motika , Eugene Karwacki , Kerry Berger
发明人： Bing Ji , Ronald Pearlstein , Robert Syvret , Peter Badowski , Stephen Motika , Eugene Karwacki , Kerry Berger
IPC分类号： H01L21/3065 , C09K13/08 , H01L21/311 , H01B13/00 , B44C1/22 , C03C15/00 , C03C25/68 , C23F1/00
CPC分类号： H01L21/31116
摘要： A mixture and a method comprising same for etching a dielectric material from a layered substrate are disclosed herein. Specifically, in one embodiment, there is provided a mixture for etching a dielectric material in a layered substrate comprising an unsaturated oxygenated fluorocarbon. The mixture of the present invention may be contacted with a layered substrate comprising a dielectric material under conditions sufficient to at least partially react with and remove at least a portion of the dielectric material. In another embodiment of the present invention, there is provided a method for making an unsaturated oxygenated fluorocarbon.
摘要翻译： 本文公开了一种用于从层状衬底蚀刻电介质材料的混合物及其方法。 具体地，在一个实施方案中，提供了一种用于在包含不饱和氧化碳氟化合物的层状基材中蚀刻电介质材料的混合物。 本发明的混合物可以在包含电介质材料的层状基材上与足以至少部分地反应并除去至少一部分电介质材料的条件下接触。 在本发明的另一个实施方案中，提供了制备不饱和氧化碳氟化合物的方法。
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5.发明申请Use of hypofluorites, fluoroperoxides, and/or fluorotrioxides as oxidizing agent in fluorocarbon etch plasmas 审中-公开在氟碳蚀刻等离子体中使用次氟酸盐，氟过氧化物和/或氟三氧化物作为氧化剂公开(公告)号：US20050014383A1
公开(公告)日：2005-01-20
申请号：US10619922
申请日：2003-07-15
申请人： Bing Ji , Stephen Motika , Robert Syvret , Peter Badowski , Eugene Karwacki , Howard Withers , Ronald Pearlstein
发明人： Bing Ji , Stephen Motika , Robert Syvret , Peter Badowski , Eugene Karwacki , Howard Withers , Ronald Pearlstein
IPC分类号： H01L21/3065 , C09K13/08 , H01L21/311 , H01L21/302 , H01L21/461
CPC分类号： H01L21/31116
摘要： A mixture and a method comprising same for etching a dielectric material from a layered substrate are disclosed herein. Specifically, in one embodiment, there is provided a mixture for etching a dielectric material in a layered substrate comprising: a fluorocarbon gas, a fluorine-containing oxidizer gas selected from the group consisting of a hypofluorite, a fluoroperoxide, a fluorotrioxide, and combinations thereof; and optionally an inert diluent gas. The mixture of the present invention may be contacted with a layered substrate comprising a dielectric material under conditions sufficient to form active species that at least partially react with and remove at least a portion of the dielectric material.
摘要翻译： 本文公开了一种用于从层状衬底蚀刻电介质材料的混合物及其方法。 具体地说，在一个实施方案中，提供了一种用于蚀刻层状基板中的电介质材料的混合物，包括：碳氟化合物气体，选自次氟酸盐，氟过氧化物，氟三氧化物及其组合的含氟氧化剂气体 ; 和任选的惰性稀释气体。 本发明的混合物可以在足以形成至少部分地与电介质材料的至少一部分反应并除去介电材料的至少一部分的活性物质的条件下与包含电介质材料的层状基板接触。
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6.发明申请Use Of Hypofluorites, Fluoroperoxides, And/Or Fluorotrioxides As Oxidizing Agent In Fluorocarbon Etch Plasmas 审中-公开在氟碳蚀刻等离子体中使用次氟酸盐，氟过氧化物和/或氟三氧化物作为氧化剂公开(公告)号：US20070224829A1
公开(公告)日：2007-09-27
申请号：US11693302
申请日：2007-03-29
申请人： Bing Ji , Stephen Motika , Robert Syvret , Peter Badowski , Eugene Karwacki , Howard Withers , Ronald Pearlstein
发明人： Bing Ji , Stephen Motika , Robert Syvret , Peter Badowski , Eugene Karwacki , Howard Withers , Ronald Pearlstein
IPC分类号： H01L21/302 , H01L21/461
CPC分类号： H01L21/31116
摘要： A mixture and a method comprising same for etching a dielectric material from a layered substrate are disclosed herein. Specifically, in one embodiment, there is provided a mixture for etching a dielectric material in a layered substrate comprising: a fluorocarbon gas, a fluorine-containing oxidizer gas selected from the group consisting of a hypofluorite, a fluoroperoxide, a fluorotrioxide, and combinations thereof; and optionally an inert diluent gas. The mixture of the present invention may be contacted with a layered substrate comprising a dielectric material under conditions sufficient to form active species that at least partially react with and remove at least a portion of the dielectric material.
摘要翻译： 本文公开了一种用于从层状衬底蚀刻电介质材料的混合物及其方法。 具体地说，在一个实施方案中，提供了一种用于蚀刻层状基板中的介电材料的混合物，包括：碳氟化合物气体，选自次氟酸盐，氟过氧化物，氟三氧化物及其组合的含氟氧化剂气体 ; 和任选的惰性稀释气体。 本发明的混合物可以在足以形成至少部分地与电介质材料的至少一部分反应并除去介电材料的至少一部分的活性物质的条件下与包含电介质材料的层状基板接触。
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公开(公告)号：US20060254645A1
公开(公告)日：2006-11-16
申请号：US11128515
申请日：2005-05-13
IPC分类号： G05D7/00
CPC分类号： F17C13/04 , F17C2221/05 , F17C2223/0123 , F17C2223/035 , F17C2227/044 , F17C2227/045 , F17C2250/0452 , F17C2260/044 , F17C2270/0518 , Y02E60/321 , Y10T137/0419 , Y10T137/4259
摘要： The present invention provides an improved gas transfer apparatus designed for enhanced purging of a pigtail and a process for effecting such purging. The improvement in the apparatus resides in an integrated system of components comprising: a surge chamber having a first end, a body and a second end, said first end in communication with the pigtail conduit, said body section of said surge chamber having a cross-section larger than the cross-section of said pigtail conduit and a second end in communication with said vessel containing said gas source; and, a purge gas source for delivery of a purge gas to said pigtail conduit whereby during an alternating cycle of pressurization of said pigtail with said purge gas and depressurization, optionally with application of vacuum within said pigtail conduit, impurities can be removed from within the pigtail conduit.
摘要翻译： 本发明提供了一种改进的气体输送装置，其设计用于增强辫子的清洗和进行这种净化的方法。 装置的改进在于一种组件的集成系统，包括：一个具有第一端，主体和第二端的缓冲室，所述第一端与引出管道连通，所述缓冲室的主体部分具有横截面， 该截面大于所述尾纤管道的横截面，以及与所述容纳所述气体源的容器连通的第二端; 以及用于将净化气体输送到所述尾纤管道的吹扫气体源，由此在所述猪尾与所述净化气体的加压交替循环和减压期间，任选地在所述猪尾管内施加真空，可以从 猪尾管。
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公开(公告)号：US20060000850A1
公开(公告)日：2006-01-05
申请号：US10884824
申请日：2004-07-02
IPC分类号： B67D5/00
CPC分类号： B01D35/02 , B01D46/0036 , B01D46/4272 , B01D2275/40
摘要： The present invention is an apparatus for containing and dispensing a high purity fluid comprising an outer vessel capable of containing a quantity of high purity fluid in its interior; an outlet associated with the outer vessel for dispensing the high purity fluid; a valve capable of controlling high purity fluid flow out of the outer vessel through the outlet; an inner vessel at least partly situated in the outer vessel and communicating with the outlet and an inlet which communicates with the interior of the outer vessel; a purification media contained within the inner vessel for purifying the high purity fluid of undesired components; and fluid flow control device which prevents high purity fluid from flowing from the inner vessel to the interior of the outer vessel.
摘要翻译： 本发明是一种用于容纳和分配高纯度流体的装置，其包括能够在其内部容纳一定量的高纯度流体的外部容器; 与用于分配高纯度流体的外部容器相关联的出口; 能够通过出口控制高纯度流体流出外容器的阀; 至少部分地位于所述外部容器中并与所述出口连通的内部容器和与所述外部容器的内部连通的入口; 内部容器中的净化介质，用于净化不期望的组分的高纯度流体; 以及流体流动控制装置，其防止高纯度流体从内部容器流动到外部容器的内部。
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