利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

8 条记录 (耗时 0.021 秒)

    Use Of Hypofluorites, Fluoroperoxides, And/Or Fluorotrioxides As Oxidizing Agent In Fluorocarbon Etch Plasmas
    2.
    发明申请
    Use Of Hypofluorites, Fluoroperoxides, And/Or Fluorotrioxides As Oxidizing Agent In Fluorocarbon Etch Plasmas 审中-公开
    在氟碳蚀刻等离子体中使用次氟酸盐，氟过氧化物和/或氟三氧化物作为氧化剂

    公开(公告)号：US20070224829A1

    公开(公告)日：2007-09-27

    申请号：US11693302

    申请日：2007-03-29

    申请人： Bing Ji ,  Stephen Motika ,  Robert Syvret ,  Peter Badowski ,  Eugene Karwacki ,  Howard Withers ,  Ronald Pearlstein

    发明人： Bing Ji ,  Stephen Motika ,  Robert Syvret ,  Peter Badowski ,  Eugene Karwacki ,  Howard Withers ,  Ronald Pearlstein

    IPC分类号： H01L21/302 ,  H01L21/461

    CPC分类号： H01L21/31116

    摘要： A mixture and a method comprising same for etching a dielectric material from a layered substrate are disclosed herein. Specifically, in one embodiment, there is provided a mixture for etching a dielectric material in a layered substrate comprising: a fluorocarbon gas, a fluorine-containing oxidizer gas selected from the group consisting of a hypofluorite, a fluoroperoxide, a fluorotrioxide, and combinations thereof; and optionally an inert diluent gas. The mixture of the present invention may be contacted with a layered substrate comprising a dielectric material under conditions sufficient to form active species that at least partially react with and remove at least a portion of the dielectric material.

    摘要翻译： 本文公开了一种用于从层状衬底蚀刻电介质材料的混合物及其方法。 具体地说，在一个实施方案中，提供了一种用于蚀刻层状基板中的介电材料的混合物，包括：碳氟化合物气体，选自次氟酸盐，氟过氧化物，氟三氧化物及其组合的含氟氧化剂气体 ; 和任选的惰性稀释气体。 本发明的混合物可以在足以形成至少部分地与电介质材料的至少一部分反应并除去介电材料的至少一部分的活性物质的条件下与包含电介质材料的层状基板接触。

    Use of hypofluorites, fluoroperoxides, and/or fluorotrioxides as oxidizing agent in fluorocarbon etch plasmas
    3.
    发明申请
    Use of hypofluorites, fluoroperoxides, and/or fluorotrioxides as oxidizing agent in fluorocarbon etch plasmas 审中-公开
    在氟碳蚀刻等离子体中使用次氟酸盐，氟过氧化物和/或氟三氧化物作为氧化剂

    公开(公告)号：US20050014383A1

    公开(公告)日：2005-01-20

    申请号：US10619922

    申请日：2003-07-15

    申请人： Bing Ji ,  Stephen Motika ,  Robert Syvret ,  Peter Badowski ,  Eugene Karwacki ,  Howard Withers ,  Ronald Pearlstein

    发明人： Bing Ji ,  Stephen Motika ,  Robert Syvret ,  Peter Badowski ,  Eugene Karwacki ,  Howard Withers ,  Ronald Pearlstein

    IPC分类号： H01L21/3065 ,  C09K13/08 ,  H01L21/311 ,  H01L21/302 ,  H01L21/461

    CPC分类号： H01L21/31116

    摘要： A mixture and a method comprising same for etching a dielectric material from a layered substrate are disclosed herein. Specifically, in one embodiment, there is provided a mixture for etching a dielectric material in a layered substrate comprising: a fluorocarbon gas, a fluorine-containing oxidizer gas selected from the group consisting of a hypofluorite, a fluoroperoxide, a fluorotrioxide, and combinations thereof; and optionally an inert diluent gas. The mixture of the present invention may be contacted with a layered substrate comprising a dielectric material under conditions sufficient to form active species that at least partially react with and remove at least a portion of the dielectric material.

    摘要翻译： 本文公开了一种用于从层状衬底蚀刻电介质材料的混合物及其方法。 具体地说，在一个实施方案中，提供了一种用于蚀刻层状基板中的电介质材料的混合物，包括：碳氟化合物气体，选自次氟酸盐，氟过氧化物，氟三氧化物及其组合的含氟氧化剂气体 ; 和任选的惰性稀释气体。 本发明的混合物可以在足以形成至少部分地与电介质材料的至少一部分反应并除去介电材料的至少一部分的活性物质的条件下与包含电介质材料的层状基板接触。

    Passivating ALD reactor chamber internal surfaces to prevent residue buildup
    7.
    发明申请
    Passivating ALD reactor chamber internal surfaces to prevent residue buildup 审中-公开
    钝化ALD反应器室内表面以防止残留物积聚

    公开(公告)号：US20060040054A1

    公开(公告)日：2006-02-23

    申请号：US10920541

    申请日：2004-08-18

    申请人： Ronald Pearlstein ,  Bing Ji ,  Stephen Motika

    发明人： Ronald Pearlstein ,  Bing Ji ,  Stephen Motika

    IPC分类号： C23C16/00

    CPC分类号： C23C16/4404

    摘要： This invention is directed to an improved method for preventing deposition residue buildup on the internal surfaces of an ALD reactor chamber. In an ALD deposition process, the surfaces of a substrate are treated with an initiating precursor generating a labile atom reactive with a deposition precursor. Excess initiating precursor is removed from the reactor and the substrate surface then is exposed to a deposition precursor reactive with the labile atom under conditions for generating a fugitive reaction product containing the labile atom and leaving a deposition product. The process is repeated generating alternate layers of initiation and deposition precursor reaction products. The improvement in the ALD process resides in passivating the internal surfaces of the reactor by removing labile atoms reactable with either the initiating or deposition precursors prior to effecting ALD deposition.

    摘要翻译： 本发明涉及一种用于防止在ALD反应器室的内表面上产生沉积残渣的改进方法。 在ALD沉积工艺中，用起始前体处理底物的表面，产生与沉积前体反应的不稳定的原子。 从反应器中除去过量的引发前体，然后在产生含有不稳定原子的离散反应产物并留下沉积产物的条件下将底物表面暴露于与不稳定原子反应的沉积前体。 该过程重复产生起始和沉积前体反应产物的交替层。 ALD方法的改进在于通过在实现ALD沉积之前去除与起始或沉积前体可反应的不稳定原子来钝化反应器的内表面。