利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

11 条记录 (耗时 0.021 秒)

    DOUBLE FILM BULK ACOUSTIC RESONATOR HAVING ELECTRODE EDGE ALIGNMENTS PROVIDING IMPROVED QUALITY FACTOR OR ELECTROMECHANICAL COUPLING COEFFICIENT
    1.
    发明申请
    DOUBLE FILM BULK ACOUSTIC RESONATOR HAVING ELECTRODE EDGE ALIGNMENTS PROVIDING IMPROVED QUALITY FACTOR OR ELECTROMECHANICAL COUPLING COEFFICIENT 有权
    具有提供改进的质量因子或机电耦合系数的电极边缘对准的双膜电池谐振器

    公开(公告)号：US20130063226A1

    公开(公告)日：2013-03-14

    申请号：US13232213

    申请日：2011-09-14

    申请人： Dariusz BURAK ,  Chris FENG ,  Stefan BADER

    发明人： Dariusz BURAK ,  Chris FENG ,  Stefan BADER

    IPC分类号： H03H9/54

    CPC分类号： H03H9/132 ,  H03H9/585 ,  H03H9/587

    摘要： An acoustic resonator comprises a substrate having a trench with lateral boundaries, a first electrode formed on the substrate over the trench and having lateral edges that are laterally offset from the lateral boundaries of the trench by a first distance, a first piezoelectric layer formed on the first electrode, a second electrode formed on the first piezoelectric layer and having edges that are laterally aligned inside the lateral boundaries of the trench, a second piezoelectric layer located on the second electrode, and a third electrode located on the second piezoelectric layer and having edges that are laterally offset from the edges of the second electrode.

    摘要翻译： 声谐振器包括具有横向边界的沟槽的衬底，形成在沟槽上的衬底上的第一电极，并且具有横向边缘，该侧边缘从沟槽的横向边界横向偏移第一距离;第一压电层 第一电极，形成在第一压电层上并具有在沟槽的横向边界内侧向对齐的边缘的第二电极，位于第二电极上的第二压电层，以及位于第二压电层上的第三电极， 其从第二电极的边缘横向偏移。

    COUPLED RESONATOR FILTER COMPRISING A BRIDGE AND FRAME ELEMENTS
    2.
    发明申请
    COUPLED RESONATOR FILTER COMPRISING A BRIDGE AND FRAME ELEMENTS 有权
    包括桥梁和框架元件的联合共振器过滤器

    公开(公告)号：US20120218058A1

    公开(公告)日：2012-08-30

    申请号：US13167939

    申请日：2011-06-24

    申请人： Dariusz BURAK ,  Alexandre SHIRAKAWA ,  Chris FENG ,  Phil NIKKEL ,  Stefan BADER

    发明人： Dariusz BURAK ,  Alexandre SHIRAKAWA ,  Chris FENG ,  Phil NIKKEL ,  Stefan BADER

    IPC分类号： H03H9/54

    CPC分类号： H03H9/0211 ,  H03H3/04 ,  H03H9/02007 ,  H03H9/132 ,  H03H9/584 ,  H03H9/587 ,  H03H9/589

    摘要： In accordance with a representative embodiment, a bulk acoustic wave (BAW) resonator structure, comprises: a first BAW resonator comprising a first lower electrode, a first upper electrode and a first piezoelectric layer disposed between the first lower electrode and the first upper electrode; a second BAW resonator comprising a second lower electrode, a second upper electrode and a second piezoelectric layer disposed between the second lower electrode and the second upper electrode; an acoustic coupling layer disposed between the first BAW resonator and the second BAW resonator; and a bridge disposed between the first lower electrode of the first BAW resonator and the second upper electrode of the second BAW resonator. An inner raised region or an outer raised region, or both are disposed over the second upper electrode.

    摘要翻译： 根据代表性实施例，体声波（BAW）谐振器结构包括：第一BAW谐振器，包括第一下电极，第一上电极和设置在第一下电极和第一上电极之间的第一压电层; 第二BAW谐振器，包括设置在所述第二下电极和所述第二上电极之间的第二下电极，第二上电极和第二压电层; 设置在第一BAW谐振器和第二BAW谐振器之间的声耦合层; 以及布置在第一BAW谐振器的第一下电极和第二BAW谐振器的第二上电极之间的桥。 内部凸起区域或外部凸起区域或两者均设置在第二上部电极上。

    DOUBLE FILM BULK ACOUSTIC RESONATORS WITH ELECTRODE LAYER AND PIEZO-ELECTRIC LAYER THICKNESSES PROVIDING IMPROVED QUALITY FACTOR
    3.
    发明申请
    DOUBLE FILM BULK ACOUSTIC RESONATORS WITH ELECTRODE LAYER AND PIEZO-ELECTRIC LAYER THICKNESSES PROVIDING IMPROVED QUALITY FACTOR 有权
    双层膜膨胀谐振器，带电极层和PIEZO电层厚度提供改进的质量因子

    公开(公告)号：US20120280767A1

    公开(公告)日：2012-11-08

    申请号：US13101376

    申请日：2011-05-05

    申请人： Dariusz BURAK ,  Chris FENG ,  Alexandre SHIRAKAWA ,  Stefan BADER

    发明人： Dariusz BURAK ,  Chris FENG ,  Alexandre SHIRAKAWA ,  Stefan BADER

    IPC分类号： H03H9/56

    CPC分类号： H03H9/56 ,  H03H9/132 ,  H03H9/205 ,  H03H9/566 ,  H03H9/582 ,  H03H9/585 ,  H03H9/587 ,  H03H2003/028

    摘要： A device includes: a first electrode having a first electrode thickness; a first acoustic propagation layer disposed on the first electrode, the first piezo-electric layer having a first acoustic propagation layer thickness; a second electrode having a second electrode thickness; a second piezo-electric layer disposed on the first electrode, the second piezo-electric layer having a second acoustic propagation layer thickness; and a third electrode having a third electrode thickness, wherein the second electrode thickness is between 1.15 and 1.8 times the first electrode thickness. The first and third electrode thicknesses may be equal to each other, and the first and second piezo-electric layer thicknesses may be equal to each other. The first and third electrodes may be connected together to provide two acoustic resonators in parallel with each other.

    摘要翻译： 一种器件包括：具有第一电极厚度的第一电极; 设置在所述第一电极上的第一声传播层，所述第一压电层具有第一声传播层厚度; 具有第二电极厚度的第二电极; 设置在所述第一电极上的第二压电层，所述第二压电层具有第二声传播层厚度; 以及具有第三电极厚度的第三电极，其中所述第二电极厚度在所述第一电极厚度的1.15和1.8倍之间。 第一和第三电极厚度可以彼此相等，并且第一和第二压电层厚度可以彼此相等。 第一和第三电极可以连接在一起以提供彼此平行的两个声谐振器。

    STACKED BULK ACOUSTIC RESONATOR COMPRISING A BRIDGE AND AN ACOUSTIC REFLECTOR ALONG A PERIMETER OF THE RESONATOR
    4.
    发明申请
    STACKED BULK ACOUSTIC RESONATOR COMPRISING A BRIDGE AND AN ACOUSTIC REFLECTOR ALONG A PERIMETER OF THE RESONATOR 有权
    在谐振器的一个周围包括一个桥梁和一个声音反射器的堆积式音箱谐振器

    公开(公告)号：US20120218059A1

    公开(公告)日：2012-08-30

    申请号：US13208883

    申请日：2011-08-12

    申请人： Dariusz BURAK ,  Stefan BADER ,  Alexandre SHIRAKAWA ,  Phil NIKKEL

    发明人： Dariusz BURAK ,  Stefan BADER ,  Alexandre SHIRAKAWA ,  Phil NIKKEL

    IPC分类号： H03H9/56

    CPC分类号： H03H9/0211 ,  H03H3/04 ,  H03H9/02007 ,  H03H9/132 ,  H03H9/173 ,  H03H9/175 ,  H03H9/585 ,  H03H9/587 ,  H03H9/589

    摘要： In a representative embodiment, a bulk acoustic wave (BAW) resonator comprises: a cavity provided in a first layer and having a perimeter bordering an active region of the BAW resonator; a distributed Bragg reflector (DBR) bordering the cavity, wherein the first layer is one of the layers of the DBR; a first electrode disposed over the substrate; a first piezoelectric layer disposed over the first electrode; a second electrode disposed over the first piezoelectric layer; a second piezoelectric layer disposed over the second electrode; a third electrode disposed over the second piezoelectric layer; and a bridge disposed between the first electrode and the third electrode.

    摘要翻译： 在代表性实施例中，体声波（BAW）谐振器包括：设置在第一层中并具有与BAW谐振器的有源区域接壤的周边的空腔; 与空腔接合的分布布拉格反射器（DBR），其中第一层是DBR的层之一; 设置在所述基板上的第一电极; 设置在所述第一电极上的第一压电层; 设置在所述第一压电层上的第二电极; 设置在所述第二电极上的第二压电层; 设置在所述第二压电层上的第三电极; 以及设置在所述第一电极和所述第三电极之间的桥。

    STACKED ACOUSTIC RESONATOR COMPRISING A BRIDGE
    5.
    发明申请
    STACKED ACOUSTIC RESONATOR COMPRISING A BRIDGE 有权
    包含桥梁的堆叠式声学谐振器

    公开(公告)号：US20120218055A1

    公开(公告)日：2012-08-30

    申请号：US13074262

    申请日：2011-03-29

    申请人： Dariusz BURAK ,  Alexandre SHIRAKAWA ,  Stefan BADER

    发明人： Dariusz BURAK ,  Alexandre SHIRAKAWA ,  Stefan BADER

    IPC分类号： H03H9/02

    CPC分类号： H03H9/02 ,  H03H9/02086 ,  H03H9/132 ,  H03H9/585

    摘要： In accordance with a representative embodiment, a bulk acoustic wave (BAW) resonator structure, comprises: a first electrode disposed over a substrate; a first piezoelectric layer disposed over the first electrode; a second electrode disposed over the first piezoelectric layer; a second piezoelectric layer disposed over the second electrode; a third electrode disposed over the second piezoelectric layer; and a bridge disposed between the first electrode and the third electrode.

    摘要翻译： 根据代表性实施例，体声波（BAW）谐振器结构包括：设置在基板上的第一电极; 设置在所述第一电极上的第一压电层; 设置在所述第一压电层上的第二电极; 设置在所述第二电极上的第二压电层; 设置在所述第二压电层上的第三电极; 以及设置在所述第一电极和所述第三电极之间的桥。

    BULK ACOUSTIC RESONATOR COMPRISING NON-PIEZOELECTRIC LAYER AND BRIDGE
    8.
    发明申请
    BULK ACOUSTIC RESONATOR COMPRISING NON-PIEZOELECTRIC LAYER AND BRIDGE 有权
    包含非压电层和桥的大容量谐振谐振器

    公开(公告)号：US20120319534A1

    公开(公告)日：2012-12-20

    申请号：US13168101

    申请日：2011-06-24

    申请人： Alexandre SHIRAKAWA ,  Dariusz BURAK ,  Phil NIKKEL

    发明人： Alexandre SHIRAKAWA ,  Dariusz BURAK ,  Phil NIKKEL

    IPC分类号： H01L41/02

    CPC分类号： H03H3/02 ,  H03H9/02118 ,  H03H9/173 ,  H03H2003/021

    摘要： A bulk acoustic wave (BAW) resonator, comprises: a first electrode formed on a substrate; a piezoelectric layer formed on the first electrode; a second electrode formed on the first piezoelectric layer; a non-piezoelectric layer formed on the first electrode and adjacent to the piezoelectric layer; and a bridge formed between the non-piezoelectric layer and the first or second electrode.

    摘要翻译： 体声波（BAW）谐振器包括：形成在基板上的第一电极; 形成在所述第一电极上的压电层; 形成在第一压电层上的第二电极; 形成在所述第一电极上且与所述压电层相邻的非压电层; 以及形成在非压电层和第一或第二电极之间的桥。

    BULK ACOUSTIC RESONATOR COMPRISING NON-PIEZOELECTRIC LAYER
    10.
    发明申请
    BULK ACOUSTIC RESONATOR COMPRISING NON-PIEZOELECTRIC LAYER 有权
    包含非压电层的大容量谐振谐振器

    公开(公告)号：US20120319530A1

    公开(公告)日：2012-12-20

    申请号：US13161946

    申请日：2011-06-16

    申请人： Dariusz BURAK ,  Jyrki KAITILA ,  Alexandre SHIRAKAWA ,  Martin Handtmann ,  Phil NIKKEL

    发明人： Dariusz BURAK ,  Jyrki KAITILA ,  Alexandre SHIRAKAWA ,  Martin Handtmann ,  Phil NIKKEL

    IPC分类号： H01L41/00

    CPC分类号： H03H9/173 ,  H03H9/585

    摘要： In a representative embodiment, a bulk acoustic wave (BAW) resonator structure comprises: a first electrode disposed over a substrate; a first piezoelectric layer disposed over the first electrode; a second electrode disposed over the first piezoelectric layer, wherein c-axis orientations of crystals of the first piezoelectric layer are substantially aligned with one another; a second piezoelectric layer disposed over the second electrode; a non-piezoelectric layer; and a third electrode disposed over the second piezoelectric layer.

    摘要翻译： 在代表性的实施例中，体声波（BAW）谐振器结构包括：设置在基板上的第一电极; 设置在所述第一电极上的第一压电层; 设置在所述第一压电层上的第二电极，其中所述第一压电层的晶体的c轴取向基本上彼此对准; 设置在所述第二电极上的第二压电层; 非压电层; 以及设置在第二压电层上的第三电极。