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    STACKED BULK ACOUSTIC RESONATOR COMPRISING A BRIDGE AND AN ACOUSTIC REFLECTOR ALONG A PERIMETER OF THE RESONATOR
    1.
    发明申请
    STACKED BULK ACOUSTIC RESONATOR COMPRISING A BRIDGE AND AN ACOUSTIC REFLECTOR ALONG A PERIMETER OF THE RESONATOR 有权
    在谐振器的一个周围包括一个桥梁和一个声音反射器的堆积式音箱谐振器

    公开(公告)号：US20120218059A1

    公开(公告)日：2012-08-30

    申请号：US13208883

    申请日：2011-08-12

    申请人： Dariusz BURAK ,  Stefan BADER ,  Alexandre SHIRAKAWA ,  Phil NIKKEL

    发明人： Dariusz BURAK ,  Stefan BADER ,  Alexandre SHIRAKAWA ,  Phil NIKKEL

    IPC分类号： H03H9/56

    CPC分类号： H03H9/0211 ,  H03H3/04 ,  H03H9/02007 ,  H03H9/132 ,  H03H9/173 ,  H03H9/175 ,  H03H9/585 ,  H03H9/587 ,  H03H9/589

    摘要： In a representative embodiment, a bulk acoustic wave (BAW) resonator comprises: a cavity provided in a first layer and having a perimeter bordering an active region of the BAW resonator; a distributed Bragg reflector (DBR) bordering the cavity, wherein the first layer is one of the layers of the DBR; a first electrode disposed over the substrate; a first piezoelectric layer disposed over the first electrode; a second electrode disposed over the first piezoelectric layer; a second piezoelectric layer disposed over the second electrode; a third electrode disposed over the second piezoelectric layer; and a bridge disposed between the first electrode and the third electrode.

    摘要翻译： 在代表性实施例中，体声波（BAW）谐振器包括：设置在第一层中并具有与BAW谐振器的有源区域接壤的周边的空腔; 与空腔接合的分布布拉格反射器（DBR），其中第一层是DBR的层之一; 设置在所述基板上的第一电极; 设置在所述第一电极上的第一压电层; 设置在所述第一压电层上的第二电极; 设置在所述第二电极上的第二压电层; 设置在所述第二压电层上的第三电极; 以及设置在所述第一电极和所述第三电极之间的桥。

    BULK ACOUSTIC RESONATOR COMPRISING NON-PIEZOELECTRIC LAYER AND BRIDGE
    2.
    发明申请
    BULK ACOUSTIC RESONATOR COMPRISING NON-PIEZOELECTRIC LAYER AND BRIDGE 有权
    包含非压电层和桥的大容量谐振谐振器

    公开(公告)号：US20120319534A1

    公开(公告)日：2012-12-20

    申请号：US13168101

    申请日：2011-06-24

    申请人： Alexandre SHIRAKAWA ,  Dariusz BURAK ,  Phil NIKKEL

    发明人： Alexandre SHIRAKAWA ,  Dariusz BURAK ,  Phil NIKKEL

    IPC分类号： H01L41/02

    CPC分类号： H03H3/02 ,  H03H9/02118 ,  H03H9/173 ,  H03H2003/021

    摘要： A bulk acoustic wave (BAW) resonator, comprises: a first electrode formed on a substrate; a piezoelectric layer formed on the first electrode; a second electrode formed on the first piezoelectric layer; a non-piezoelectric layer formed on the first electrode and adjacent to the piezoelectric layer; and a bridge formed between the non-piezoelectric layer and the first or second electrode.

    摘要翻译： 体声波（BAW）谐振器包括：形成在基板上的第一电极; 形成在所述第一电极上的压电层; 形成在第一压电层上的第二电极; 形成在所述第一电极上且与所述压电层相邻的非压电层; 以及形成在非压电层和第一或第二电极之间的桥。

    BULK ACOUSTIC RESONATOR COMPRISING NON-PIEZOELECTRIC LAYER
    5.
    发明申请
    BULK ACOUSTIC RESONATOR COMPRISING NON-PIEZOELECTRIC LAYER 有权
    包含非压电层的大容量谐振谐振器

    公开(公告)号：US20120319530A1

    公开(公告)日：2012-12-20

    申请号：US13161946

    申请日：2011-06-16

    申请人： Dariusz BURAK ,  Jyrki KAITILA ,  Alexandre SHIRAKAWA ,  Martin Handtmann ,  Phil NIKKEL

    发明人： Dariusz BURAK ,  Jyrki KAITILA ,  Alexandre SHIRAKAWA ,  Martin Handtmann ,  Phil NIKKEL

    IPC分类号： H01L41/00

    CPC分类号： H03H9/173 ,  H03H9/585

    摘要： In a representative embodiment, a bulk acoustic wave (BAW) resonator structure comprises: a first electrode disposed over a substrate; a first piezoelectric layer disposed over the first electrode; a second electrode disposed over the first piezoelectric layer, wherein c-axis orientations of crystals of the first piezoelectric layer are substantially aligned with one another; a second piezoelectric layer disposed over the second electrode; a non-piezoelectric layer; and a third electrode disposed over the second piezoelectric layer.

    摘要翻译： 在代表性的实施例中，体声波（BAW）谐振器结构包括：设置在基板上的第一电极; 设置在所述第一电极上的第一压电层; 设置在所述第一压电层上的第二电极，其中所述第一压电层的晶体的c轴取向基本上彼此对准; 设置在所述第二电极上的第二压电层; 非压电层; 以及设置在第二压电层上的第三电极。

    COUPLED RESONATOR FILTER COMPRISING A BRIDGE AND FRAME ELEMENTS
    6.
    发明申请
    COUPLED RESONATOR FILTER COMPRISING A BRIDGE AND FRAME ELEMENTS 有权
    包括桥梁和框架元件的联合共振器过滤器

    公开(公告)号：US20120218058A1

    公开(公告)日：2012-08-30

    申请号：US13167939

    申请日：2011-06-24

    申请人： Dariusz BURAK ,  Alexandre SHIRAKAWA ,  Chris FENG ,  Phil NIKKEL ,  Stefan BADER

    发明人： Dariusz BURAK ,  Alexandre SHIRAKAWA ,  Chris FENG ,  Phil NIKKEL ,  Stefan BADER

    IPC分类号： H03H9/54

    CPC分类号： H03H9/0211 ,  H03H3/04 ,  H03H9/02007 ,  H03H9/132 ,  H03H9/584 ,  H03H9/587 ,  H03H9/589

    摘要： In accordance with a representative embodiment, a bulk acoustic wave (BAW) resonator structure, comprises: a first BAW resonator comprising a first lower electrode, a first upper electrode and a first piezoelectric layer disposed between the first lower electrode and the first upper electrode; a second BAW resonator comprising a second lower electrode, a second upper electrode and a second piezoelectric layer disposed between the second lower electrode and the second upper electrode; an acoustic coupling layer disposed between the first BAW resonator and the second BAW resonator; and a bridge disposed between the first lower electrode of the first BAW resonator and the second upper electrode of the second BAW resonator. An inner raised region or an outer raised region, or both are disposed over the second upper electrode.

    摘要翻译： 根据代表性实施例，体声波（BAW）谐振器结构包括：第一BAW谐振器，包括第一下电极，第一上电极和设置在第一下电极和第一上电极之间的第一压电层; 第二BAW谐振器，包括设置在所述第二下电极和所述第二上电极之间的第二下电极，第二上电极和第二压电层; 设置在第一BAW谐振器和第二BAW谐振器之间的声耦合层; 以及布置在第一BAW谐振器的第一下电极和第二BAW谐振器的第二上电极之间的桥。 内部凸起区域或外部凸起区域或两者均设置在第二上部电极上。

    ACOUSTIC RESONATOR STRUCTURE COMPRISING A BRIDGE
    8.
    发明申请
    ACOUSTIC RESONATOR STRUCTURE COMPRISING A BRIDGE 审中-公开
    包含桥梁的声学谐振器结构

    公开(公告)号：US20120206015A1

    公开(公告)日：2012-08-16

    申请号：US13445268

    申请日：2012-04-12

    申请人： John CHOY ,  Chris FENG ,  Phil NIKKEL

    发明人： John CHOY ,  Chris FENG ,  Phil NIKKEL

    IPC分类号： H01L41/08 ,  B05D5/12

    CPC分类号： H03H9/02149 ,  H03H9/02118 ,  H03H9/132 ,  H03H9/173

    摘要： An acoustic resonator comprises a first electrode a second electrode and a piezoelectric layer disposed between the first and second electrodes. The acoustic resonator further comprises a reflective element disposed beneath the first electrode, the second electrode and the piezoelectric layer. An overlap of the reflective element, the first electrode, the second electrode and the piezoelectric layer comprises an active area of the acoustic resonator. The acoustic resonator also comprises a bridge adjacent to a termination of the active area of the acoustic resonator.

    摘要翻译： 声谐振器包括第一电极，第二电极和设置在第一和第二电极之间的压电层。 声谐振器还包括设置在第一电极，第二电极和压电层下方的反射元件。 反射元件，第一电极，第二电极和压电层的重叠包括声谐振器的有效区域。 声谐振器还包括与声谐振器的有源区域的终端相邻的桥。

    ACOUSTIC RESONATOR STRUCTURE COMPRISING A BRIDGE
    9.
    发明申请
    ACOUSTIC RESONATOR STRUCTURE COMPRISING A BRIDGE 审中-公开

    公开(公告)号：US20120194297A1

    公开(公告)日：2012-08-02

    申请号：US13443113

    申请日：2012-04-10

    申请人： John CHOY ,  Chris FENG ,  Phil NIKKEL

    发明人： John CHOY ,  Chris FENG ,  Phil NIKKEL

    IPC分类号： H03H9/15 ,  H01L41/04

    CPC分类号： H03H9/02149 ,  H03H9/02118 ,  H03H9/132 ,  H03H9/173

    摘要： An acoustic resonator comprises a first electrode a second electrode and a piezoelectric layer disposed between the first and second electrodes. The acoustic resonator further comprises a reflective element disposed beneath the first electrode, the second electrode and the piezoelectric layer. An overlap of the reflective element, the first electrode, the second electrode and the piezoelectric layer comprises an active area of the acoustic resonator. The acoustic resonator also comprises a bridge adjacent to a termination of the active area of the acoustic resonator.

    FILM BULK ACOUSTIC RESONATOR WITH MULTI-LAYERS OF DIFFERENT PIEZOELECTRIC MATERIALS AND METHOD OF MAKING
    10.
    发明申请
    FILM BULK ACOUSTIC RESONATOR WITH MULTI-LAYERS OF DIFFERENT PIEZOELECTRIC MATERIALS AND METHOD OF MAKING 有权
    具有多层不同压电材料的薄膜聚合声波谐振器及其制造方法

    公开(公告)号：US20130193808A1

    公开(公告)日：2013-08-01

    申请号：US13362321

    申请日：2012-01-31

    申请人： Chris FENG ,  John CHOY ,  Kevin J. GRANNEN ,  Phil NIKKEL ,  Tom YEH

    发明人： Chris FENG ,  John CHOY ,  Kevin J. GRANNEN ,  Phil NIKKEL ,  Tom YEH

    IPC分类号： H01L41/04 ,  H01L41/22 ,  H01L41/047

    CPC分类号： H03H9/173 ,  H03H9/02149 ,  H03H9/171 ,  H03H9/178 ,  H03H9/585 ,  Y10T29/42

    摘要： A thin film bulk acoustic resonator (FBAR) includes a first electrode, a first piezoelectric layer having a first c-axis orientation and on the first electrode, a second piezoelectric layer having a second c-axis orientation over the first piezoelectric layer, and a second electrode on the second piezoelectric layer. The first and second piezoelectric layers are made of respective different piezoelectric materials. The FBAR can be set to have different resonance frequencies by selecting the first and second c-axis orientations to be respectively the same or different. The high and low frequency range of the FBAR can thus be extended.

    摘要翻译： 薄膜体声波谐振器（FBAR）包括第一电极，具有第一c轴取向的第一压电层，在第一电极上具有在第一压电层上具有第二c轴取向的第二压电层，以及 第二电极在第二压电层上。 第一和第二压电层由各自的不同压电材料制成。 通过选择第一和第二c轴取向分别相同或不同，可以将FBAR设置为具有不同的谐振频率。 因此可以扩展FBAR的高低频范围。