公开(公告)号：US20130106534A1

公开(公告)日：2013-05-02

申请号：US13286038

申请日：2011-10-31

申请人： Dariusz BURAK ,  Phil NIKKEL ,  John CHOY ,  Alexandre SHIRAKAWA ,  Stefan BADER

发明人： Dariusz BURAK ,  Phil NIKKEL ,  John CHOY ,  Alexandre SHIRAKAWA ,  Stefan BADER

IPC分类号： H03H9/54

CPC分类号： H03H9/173

摘要： In a representative embodiment, a bulk acoustic wave (BAW) resonator, comprises: a cavity disposed in a substrate; a first electrode disposed over the cavity; a planarization layer disposed adjacent to the first electrode; a piezoelectric layer disposed over the first electrode; and a second electrode disposed over the piezoelectric layer.

摘要翻译： 在代表性实施例中，体声波（BAW）谐振器包括：设置在基板中的空腔; 设置在所述空腔上的第一电极; 与第一电极相邻设置的平坦化层; 设置在所述第一电极上的压电层; 以及设置在所述压电层上的第二电极。

公开(公告)号：US20120218058A1

公开(公告)日：2012-08-30

申请号：US13167939

申请日：2011-06-24

申请人： Dariusz BURAK ,  Alexandre SHIRAKAWA ,  Chris FENG ,  Phil NIKKEL ,  Stefan BADER

发明人： Dariusz BURAK ,  Alexandre SHIRAKAWA ,  Chris FENG ,  Phil NIKKEL ,  Stefan BADER

IPC分类号： H03H9/54

CPC分类号： H03H9/0211 ,  H03H3/04 ,  H03H9/02007 ,  H03H9/132 ,  H03H9/584 ,  H03H9/587 ,  H03H9/589

摘要： In accordance with a representative embodiment, a bulk acoustic wave (BAW) resonator structure, comprises: a first BAW resonator comprising a first lower electrode, a first upper electrode and a first piezoelectric layer disposed between the first lower electrode and the first upper electrode; a second BAW resonator comprising a second lower electrode, a second upper electrode and a second piezoelectric layer disposed between the second lower electrode and the second upper electrode; an acoustic coupling layer disposed between the first BAW resonator and the second BAW resonator; and a bridge disposed between the first lower electrode of the first BAW resonator and the second upper electrode of the second BAW resonator. An inner raised region or an outer raised region, or both are disposed over the second upper electrode.

摘要翻译： 根据代表性实施例，体声波（BAW）谐振器结构包括：第一BAW谐振器，包括第一下电极，第一上电极和设置在第一下电极和第一上电极之间的第一压电层; 第二BAW谐振器，包括设置在所述第二下电极和所述第二上电极之间的第二下电极，第二上电极和第二压电层; 设置在第一BAW谐振器和第二BAW谐振器之间的声耦合层; 以及布置在第一BAW谐振器的第一下电极和第二BAW谐振器的第二上电极之间的桥。 内部凸起区域或外部凸起区域或两者均设置在第二上部电极上。

公开(公告)号：US20120218059A1

公开(公告)日：2012-08-30

申请号：US13208883

申请日：2011-08-12

申请人： Dariusz BURAK ,  Stefan BADER ,  Alexandre SHIRAKAWA ,  Phil NIKKEL

发明人： Dariusz BURAK ,  Stefan BADER ,  Alexandre SHIRAKAWA ,  Phil NIKKEL

IPC分类号： H03H9/56

CPC分类号： H03H9/0211 ,  H03H3/04 ,  H03H9/02007 ,  H03H9/132 ,  H03H9/173 ,  H03H9/175 ,  H03H9/585 ,  H03H9/587 ,  H03H9/589

摘要： In a representative embodiment, a bulk acoustic wave (BAW) resonator comprises: a cavity provided in a first layer and having a perimeter bordering an active region of the BAW resonator; a distributed Bragg reflector (DBR) bordering the cavity, wherein the first layer is one of the layers of the DBR; a first electrode disposed over the substrate; a first piezoelectric layer disposed over the first electrode; a second electrode disposed over the first piezoelectric layer; a second piezoelectric layer disposed over the second electrode; a third electrode disposed over the second piezoelectric layer; and a bridge disposed between the first electrode and the third electrode.

摘要翻译： 在代表性实施例中，体声波（BAW）谐振器包括：设置在第一层中并具有与BAW谐振器的有源区域接壤的周边的空腔; 与空腔接合的分布布拉格反射器（DBR），其中第一层是DBR的层之一; 设置在所述基板上的第一电极; 设置在所述第一电极上的第一压电层; 设置在所述第一压电层上的第二电极; 设置在所述第二电极上的第二压电层; 设置在所述第二压电层上的第三电极; 以及设置在所述第一电极和所述第三电极之间的桥。

公开(公告)号：US20120218055A1

公开(公告)日：2012-08-30

申请号：US13074262

申请日：2011-03-29

申请人： Dariusz BURAK ,  Alexandre SHIRAKAWA ,  Stefan BADER

发明人： Dariusz BURAK ,  Alexandre SHIRAKAWA ,  Stefan BADER

IPC分类号： H03H9/02

CPC分类号： H03H9/02 ,  H03H9/02086 ,  H03H9/132 ,  H03H9/585

摘要： In accordance with a representative embodiment, a bulk acoustic wave (BAW) resonator structure, comprises: a first electrode disposed over a substrate; a first piezoelectric layer disposed over the first electrode; a second electrode disposed over the first piezoelectric layer; a second piezoelectric layer disposed over the second electrode; a third electrode disposed over the second piezoelectric layer; and a bridge disposed between the first electrode and the third electrode.

摘要翻译： 根据代表性实施例，体声波（BAW）谐振器结构包括：设置在基板上的第一电极; 设置在所述第一电极上的第一压电层; 设置在所述第一压电层上的第二电极; 设置在所述第二电极上的第二压电层; 设置在所述第二压电层上的第三电极; 以及设置在所述第一电极和所述第三电极之间的桥。

公开(公告)号：US20120280767A1

公开(公告)日：2012-11-08

申请号：US13101376

申请日：2011-05-05

申请人： Dariusz BURAK ,  Chris FENG ,  Alexandre SHIRAKAWA ,  Stefan BADER

发明人： Dariusz BURAK ,  Chris FENG ,  Alexandre SHIRAKAWA ,  Stefan BADER

IPC分类号： H03H9/56

CPC分类号： H03H9/56 ,  H03H9/132 ,  H03H9/205 ,  H03H9/566 ,  H03H9/582 ,  H03H9/585 ,  H03H9/587 ,  H03H2003/028

摘要： A device includes: a first electrode having a first electrode thickness; a first acoustic propagation layer disposed on the first electrode, the first piezo-electric layer having a first acoustic propagation layer thickness; a second electrode having a second electrode thickness; a second piezo-electric layer disposed on the first electrode, the second piezo-electric layer having a second acoustic propagation layer thickness; and a third electrode having a third electrode thickness, wherein the second electrode thickness is between 1.15 and 1.8 times the first electrode thickness. The first and third electrode thicknesses may be equal to each other, and the first and second piezo-electric layer thicknesses may be equal to each other. The first and third electrodes may be connected together to provide two acoustic resonators in parallel with each other.

摘要翻译： 一种器件包括：具有第一电极厚度的第一电极; 设置在所述第一电极上的第一声传播层，所述第一压电层具有第一声传播层厚度; 具有第二电极厚度的第二电极; 设置在所述第一电极上的第二压电层，所述第二压电层具有第二声传播层厚度; 以及具有第三电极厚度的第三电极，其中所述第二电极厚度在所述第一电极厚度的1.15和1.8倍之间。 第一和第三电极厚度可以彼此相等，并且第一和第二压电层厚度可以彼此相等。 第一和第三电极可以连接在一起以提供彼此平行的两个声谐振器。

公开(公告)号：US20130063226A1

公开(公告)日：2013-03-14

申请号：US13232213

申请日：2011-09-14

申请人： Dariusz BURAK ,  Chris FENG ,  Stefan BADER

发明人： Dariusz BURAK ,  Chris FENG ,  Stefan BADER

IPC分类号： H03H9/54

CPC分类号： H03H9/132 ,  H03H9/585 ,  H03H9/587

摘要： An acoustic resonator comprises a substrate having a trench with lateral boundaries, a first electrode formed on the substrate over the trench and having lateral edges that are laterally offset from the lateral boundaries of the trench by a first distance, a first piezoelectric layer formed on the first electrode, a second electrode formed on the first piezoelectric layer and having edges that are laterally aligned inside the lateral boundaries of the trench, a second piezoelectric layer located on the second electrode, and a third electrode located on the second piezoelectric layer and having edges that are laterally offset from the edges of the second electrode.

摘要翻译： 声谐振器包括具有横向边界的沟槽的衬底，形成在沟槽上的衬底上的第一电极，并且具有横向边缘，该侧边缘从沟槽的横向边界横向偏移第一距离;第一压电层 第一电极，形成在第一压电层上并具有在沟槽的横向边界内侧向对齐的边缘的第二电极，位于第二电极上的第二压电层，以及位于第二压电层上的第三电极， 其从第二电极的边缘横向偏移。

公开(公告)号：US20100200864A1

公开(公告)日：2010-08-12

申请号：US12648566

申请日：2009-12-29

申请人： Stefan BADER ,  Dominik Eisert ,  Berthold Hahn ,  Volker Härle

发明人： Stefan BADER ,  Dominik Eisert ,  Berthold Hahn ,  Volker Härle

IPC分类号： H01L33/32

CPC分类号： H01L33/405 ,  H01L27/153 ,  H01L33/0079 ,  H01L33/44

摘要： A semiconductor component has a plurality of GaN-based layers, which are preferably used to generate radiation, produced in a fabrication process. In the process, the plurality of GaN-based layers are applied to a composite substrate that includes a substrate body and an interlayer. A coefficient of thermal expansion of the substrate body is similar to or preferably greater than the coefficient of thermal expansion of the GaN-based layers, and the GaN-based layers are deposited on the interlayer. The interlayer and the substrate body are preferably joined by a wafer bonding process.

摘要翻译： 半导体部件具有多个GaN基层，其优选用于在制造工艺中产生的辐射。 在该过程中，将多个GaN基层施加到包括基板主体和中间层的复合基板上。 衬底体的热膨胀系数与GaN基层的热膨胀系数相似或优选地大于GaN基层，并且GaN基层沉积在中间层上。 中间层和基板主体优选通过晶片接合工艺接合。

公开(公告)号：US20120211787A1

公开(公告)日：2012-08-23

申请号：US13398425

申请日：2012-02-16

申请人： Stefan BADER ,  Dominik Eisert ,  Berthold Hahn ,  Volker Härle

发明人： Stefan BADER ,  Dominik Eisert ,  Berthold Hahn ,  Volker Härle

IPC分类号： H01L33/60

CPC分类号： H01L33/405 ,  H01L27/153 ,  H01L33/0079 ,  H01L33/44

摘要： A semiconductor component has a plurality of GaN-based layers, which are preferably used to generate radiation, produced in a fabrication process. In the process, the plurality of GaN-based layers are applied to a composite substrate that includes a substrate body and an interlayer. A coefficient of thermal expansion of the substrate body is similar to or preferably greater than the coefficient of thermal expansion of the GaN-based layers, and the GaN-based layers are deposited on the interlayer. The interlayer and the substrate body are preferably joined by a wafer bonding process.

摘要翻译： 半导体部件具有多个GaN基层，其优选用于在制造工艺中产生的辐射。 在该过程中，将多个GaN基层施加到包括基板主体和中间层的复合基板上。 衬底体的热膨胀系数与GaN基层的热膨胀系数相似或优选地大于GaN基层，并且GaN基层沉积在中间层上。 中间层和基板主体优选通过晶片接合工艺接合。

公开(公告)号：US20120177816A1

公开(公告)日：2012-07-12

申请号：US13428474

申请日：2012-03-23

申请人： John D. LARSON, III ,  Jyrki KAITILA ,  Stefan BADER

发明人： John D. LARSON, III ,  Jyrki KAITILA ,  Stefan BADER

IPC分类号： H01L41/22

CPC分类号： C23C14/022 ,  C23C14/0617 ,  H03H3/02 ,  H03H9/02015 ,  H03H9/583 ,  H03H9/587

摘要： In accordance with a representative embodiment, a method, comprises: providing a substrate; forming a first piezoelectric layer having a compression-negative (CN) polarity over the substrate; and forming a second piezoelectric layer having a compression-positive (CP) over the substrate and adjacent to the first piezoelectric layer.

摘要翻译： 根据代表性实施例，一种方法包括：提供衬底; 在所述衬底上形成具有压缩 - 负（CN）极性的第一压电层; 以及在所述衬底上形成与所述第一压电层相邻的具有压缩正（CP）的第二压电层。