摘要:
Direct-write lithography apparatus and methods are disclosed in which a transducer image and an image of crossed interference fringe patterns are superimposed on a photoresist layer supported by a substrate. The transducer image has an exposure wavelength and contains bright spots, each corresponding to an activated pixel. The interference image has an inhibition wavelength and contains dark spots where the null points in the crossed interference fringes coincide. The dark spots are aligned with and trim the peripheries of the corresponding bright spot to form sub-resolution photoresist pixels having a size smaller than would be formed in the absence of the dark spots.
摘要:
Direct-write lithography apparatus and methods are disclosed in which a transducer image and an image of crossed interference fringe patterns are superimposed on a photoresist layer supported by a substrate. The transducer image has an exposure wavelength and contains bright spots, each corresponding to an activated pixel. The interference image has an inhibition wavelength and contains dark spots where the null points in the crossed interference fringes coincide. The dark spots are aligned with and trim the peripheries of the corresponding bright spot to form sub-resolution photoresist pixels having a size smaller than would be formed in the absence of the dark spots.
摘要:
Direct-write lithography apparatus and methods are disclosed in which a transducer image and an image of crossed interference fringe patterns are superimposed on a photoresist layer supported by a substrate. The transducer image has an exposure wavelength and contains bright spots, each corresponding to an activated pixel. The interference image has an inhibition wavelength and contains dark spots where the null points in the crossed interference fringes coincide. The dark spots are aligned with and trim the peripheries of the corresponding bright spot to form sub-resolution photoresist pixels having a size smaller than would be formed in the absence of the dark spots.
摘要:
Direct-write lithography apparatus and methods are disclosed in which a transducer image and an image of crossed interference fringe patterns are superimposed on a photoresist layer supported by a substrate. The transducer image has an exposure wavelength and contains bright spots, each corresponding to an activated pixel. The interference image has an inhibition wavelength and contains dark spots where the null points in the crossed interference fringes coincide. The dark spots are aligned with and trim the peripheries of the corresponding bright spot to form sub-resolution photoresist pixels having a size smaller than would be formed in the absence of the dark spots.
摘要:
Methods of and apparatus for performing direct-write lithography in a two-color photoresist layer are disclosed. The method includes exposing the two-color photoresist layer with transducer and inhibition images that respectively define bright spots and dark spots. The transducer image generates excited-state photo-molecules while the inhibition image converts the exited-state photo-molecules to an unexcited state that is not susceptible to conversion to an irreversible exposed state. The dark spots and bright spots are aligned, with the dark spots being smaller than the bright spots so that a portion of the excited-state photo-molecules adjacent the periphery of the bright spots absorb the inhibition radiation and transition to the unexcited state while a portion of the excited photo-molecules at the center of bright spots are not exposed to the inhibition light and transition to an irreversible exposed state. This forms in the two-color photoresist layer a pattern of sub-resolution photoresist pixels.
摘要:
Methods of and apparatus for performing direct-write lithography in a two-color photoresist layer are disclosed. The method includes exposing the two-color photoresist layer with transducer and inhibition images that respectively define bright spots and dark spots. The transducer image generates excited-state photo-molecules while the inhibition image converts the exited-state photo-molecules to an unexcited state that is not susceptible to conversion to an irreversible exposed state. The dark spots and bright spots are aligned, with the dark spots being smaller than the bright spots so that a portion of the excited-state photo-molecules adjacent the periphery of the bright spots absorb the inhibition radiation and transition to the unexcited state while a portion of the excited photo-molecules at the center of bright spots are not exposed to the inhibition light and transition to an irreversible exposed state. This forms in the two-color photoresist layer a pattern of sub-resolution photoresist pixels.
摘要:
High-resolution, common-path interferometric imaging systems and methods are described, wherein a light source generates and directs light toward a sample from different directions. An optical imaging system collects the resultant scattered and unscattered components. A variable phase shifting system adjusts the relative phase of the components. The interfered components are sensed by an image sensing system. The process is repeated multiple times with different phase shifts to form corresponding multiple electronic signals representative of raw sample images, which are processed by a signal processor to form a processed image. Multiple processed images, each corresponding to a different illumination azimuth angle, are combined to extend the system resolution.
摘要:
Apparatuses and methods are provided for processing a substrate having an upper surface that includes a central region, a peripheral region, and an edge adjacent to the peripheral region. An image having an intensity sufficient to effect thermal processing of the substrate is scanned across the upper surface of the substrate. The image scanning geometry allows processing the central region of the substrate at a substantially uniform temperature without damaging the outer edge. In some instances, the image may be formed from a beam traveling over at least a portion of the central region so that no portion thereof directly illuminates any portion of the edge when the image is scanned across the periphery region. The substrate may be rotated 180° or the beam direction may be switched after part of the scanning operation has been completed.
摘要:
Methods and apparatus for remotely measuring temperature of a specular surface. Method takes two measurements of P-polarized radiation emitted at or near Brewster angle from the surface. First measurement (SA) collects and detects first amount of radiation emitted directly from a surface portion using a collection optical system. Second measurement (SB) includes first amount of radiation and adds quantity of radiation collected at or near at/near Brewster angle and reflected from the surface with a retro optical system with a round-trip transmission t2 that retro-reflects a quantity of radiation received from surface portion back to same surface portion where it reflects and combines with first amount of radiation collected by collection optical system. Measurements SA and SB and t2 are used to determine surface emissivity (ξ). Calibration curve is used that relates ratio of the first measurement SA to surface emissivity (SA/ξ), to surface temperature. Surface temperature determined from SA/ξ by calibration curve.
摘要:
A method and apparatus for performing laser thermal processing (LTP) using a two-dimensional array of laser diodes to form a line image, which is scanned across a substrate. The apparatus includes a two-dimensional array of laser diodes, the radiation from which is collimated in one plane using a cylindrical lens array, and imaged onto the substrate as a line image using an anomorphic, telecentric optical imaging system. The apparatus also includes a scanning substrate stage for supporting a substrate to be LTP processed. The laser diode radiation beam is incident on the substrate at angles at or near the Brewster's angle for the given substrate material and the wavelength of the radiation beam, which is linearly P-polarized. The use of a two-dimensional laser diode array allows for a polarized radiation beam of relatively high energy density to be delivered to the substrate, thereby allowing for LTP processing with good uniformity, reasonably short dwell times, and thus reasonably high throughput.