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1.发明申请Apparatus and method of direct writing with photons beyond the diffraction limit 审中-公开用光子直接写入超过衍射极限的装置和方法公开(公告)号：US20150331330A1
公开(公告)日：2015-11-19
申请号：US14143139
申请日：2013-12-30
IPC分类号： G03F7/20
CPC分类号： G03F7/7045 , G03F7/70191 , G03F7/70291 , G03F7/70375 , G03F7/70383 , G03F7/70408 , G03F7/70466
摘要： Direct-write lithography apparatus and methods are disclosed in which a transducer image and an image of crossed interference fringe patterns are superimposed on a photoresist layer supported by a substrate. The transducer image has an exposure wavelength and contains bright spots, each corresponding to an activated pixel. The interference image has an inhibition wavelength and contains dark spots where the null points in the crossed interference fringes coincide. The dark spots are aligned with and trim the peripheries of the corresponding bright spot to form sub-resolution photoresist pixels having a size smaller than would be formed in the absence of the dark spots.
摘要翻译： 公开了直接写入光刻设备和方法，其中传感器图像和交叉干涉条纹图案的图像叠加在由衬底支撑的光致抗蚀剂层上。 换能器图像具有曝光波长并且包含亮点，每个对应于激活的像素。 干涉图像具有抑制波长，并且包含交叉干涉条纹中的零点重合的暗点。 黑点与对应的亮点的周边对准并修剪，以形成尺寸小于在不存在黑点的情况下形成的分辨率的光致抗蚀剂像素。
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公开(公告)号：US09304410B2
公开(公告)日：2016-04-05
申请号：US14143139
申请日：2013-12-30
CPC分类号： G03F7/7045 , G03F7/70191 , G03F7/70291 , G03F7/70375 , G03F7/70383 , G03F7/70408 , G03F7/70466
摘要： Direct-write lithography apparatus and methods are disclosed in which a transducer image and an image of crossed interference fringe patterns are superimposed on a photoresist layer supported by a substrate. The transducer image has an exposure wavelength and contains bright spots, each corresponding to an activated pixel. The interference image has an inhibition wavelength and contains dark spots where the null points in the crossed interference fringes coincide. The dark spots are aligned with and trim the peripheries of the corresponding bright spot to form sub-resolution photoresist pixels having a size smaller than would be formed in the absence of the dark spots.
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公开(公告)号：US20130130182A1
公开(公告)日：2013-05-23
申请号：US13678692
申请日：2012-11-16
CPC分类号： G03B27/522 , G03F7/2051 , G03F7/70383
摘要： Direct-write lithography apparatus and methods are disclosed in which a transducer image and an image of crossed interference fringe patterns are superimposed on a photoresist layer supported by a substrate. The transducer image has an exposure wavelength and contains bright spots, each corresponding to an activated pixel. The interference image has an inhibition wavelength and contains dark spots where the null points in the crossed interference fringes coincide. The dark spots are aligned with and trim the peripheries of the corresponding bright spot to form sub-resolution photoresist pixels having a size smaller than would be formed in the absence of the dark spots.
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公开(公告)号：US08642232B2
公开(公告)日：2014-02-04
申请号：US13678692
申请日：2012-11-16
CPC分类号： G03B27/522 , G03F7/2051 , G03F7/70383
摘要： Direct-write lithography apparatus and methods are disclosed in which a transducer image and an image of crossed interference fringe patterns are superimposed on a photoresist layer supported by a substrate. The transducer image has an exposure wavelength and contains bright spots, each corresponding to an activated pixel. The interference image has an inhibition wavelength and contains dark spots where the null points in the crossed interference fringes coincide. The dark spots are aligned with and trim the peripheries of the corresponding bright spot to form sub-resolution photoresist pixels having a size smaller than would be formed in the absence of the dark spots.
摘要翻译： 公开了直接写入光刻设备和方法，其中传感器图像和交叉干涉条纹图案的图像叠加在由衬底支撑的光致抗蚀剂层上。 换能器图像具有曝光波长并且包含亮点，每个对应于激活的像素。 干涉图像具有抑制波长，并且包含交叉干涉条纹中的零点重合的暗点。 黑点与对应的亮点的周边对准并修剪，以形成尺寸小于在不存在黑点的情况下形成的分辨率的光致抗蚀剂像素。
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公开(公告)号：US09195139B2
公开(公告)日：2015-11-24
申请号：US14244942
申请日：2014-04-04
申请人： David A. Markle , John S. Petersen
发明人： David A. Markle , John S. Petersen
CPC分类号： G03F7/26 , G03F7/2022 , G03F7/203 , G03F7/2051 , G03F7/7015 , G03F7/70383 , G03F7/70466
摘要： Methods of and apparatus for performing direct-write lithography in a two-color photoresist layer are disclosed. The method includes exposing the two-color photoresist layer with transducer and inhibition images that respectively define bright spots and dark spots. The transducer image generates excited-state photo-molecules while the inhibition image converts the exited-state photo-molecules to an unexcited state that is not susceptible to conversion to an irreversible exposed state. The dark spots and bright spots are aligned, with the dark spots being smaller than the bright spots so that a portion of the excited-state photo-molecules adjacent the periphery of the bright spots absorb the inhibition radiation and transition to the unexcited state while a portion of the excited photo-molecules at the center of bright spots are not exposed to the inhibition light and transition to an irreversible exposed state. This forms in the two-color photoresist layer a pattern of sub-resolution photoresist pixels.
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6.发明申请Apparatus and method of direct writing with photons beyond the diffraction limit using two-color resist 有权使用双色光刻胶直接写入光子超过衍射极限的装置和方法公开(公告)号：US20150185617A1
公开(公告)日：2015-07-02
申请号：US14244942
申请日：2014-04-04
申请人： David A. Markle , John S. Petersen
发明人： David A. Markle , John S. Petersen
IPC分类号： G03F7/20
CPC分类号： G03F7/26 , G03F7/2022 , G03F7/203 , G03F7/2051 , G03F7/7015 , G03F7/70383 , G03F7/70466
摘要： Methods of and apparatus for performing direct-write lithography in a two-color photoresist layer are disclosed. The method includes exposing the two-color photoresist layer with transducer and inhibition images that respectively define bright spots and dark spots. The transducer image generates excited-state photo-molecules while the inhibition image converts the exited-state photo-molecules to an unexcited state that is not susceptible to conversion to an irreversible exposed state. The dark spots and bright spots are aligned, with the dark spots being smaller than the bright spots so that a portion of the excited-state photo-molecules adjacent the periphery of the bright spots absorb the inhibition radiation and transition to the unexcited state while a portion of the excited photo-molecules at the center of bright spots are not exposed to the inhibition light and transition to an irreversible exposed state. This forms in the two-color photoresist layer a pattern of sub-resolution photoresist pixels.
摘要翻译： 公开了在双色光致抗蚀剂层中进行直写光刻的方法和装置。 该方法包括用分别限定亮点和暗点的换能器和抑制图像曝光双色光致抗蚀剂层。 换能器图像产生激发态光分子，而抑制图像将退出状态的光分子转换为不易转化为不可逆的暴露状态的未激发状态。 黑点和亮点对准，暗点小于亮点，使得与亮点周边相邻的激发态光分子的一部分吸收抑制辐射并转变到未激发状态，而 在亮点中心处的激发的光分子的一部分不暴露于抑制光并转变到不可逆的暴露状态。 这在双色光致抗蚀剂层中形成了次分辨光致抗蚀剂像素的图案。
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公开(公告)号：US06800401B2
公开(公告)日：2004-10-05
申请号：US09843622
申请日：2001-04-26
申请人： John S. Petersen
发明人： John S. Petersen
IPC分类号： G03F900
摘要： A system and method of strong phase-shifting a beam from an actinic light source in a lithographic process includes focusing a beam from the electromagnetic beam source onto a mask adapted to selectively phase-shift at least a portion of the beam according to a predetermined pattern. The beam is passed from the actinic light source through the mask producing a phase-shifted beam, and the phase-shifted beam is directed at a substrate such as a semiconductor wafer adapted to be selectively etched according to the predetermined pattern. The strong phase-shift serves to substantially eliminate zero-order light in the phase-shifted beam. Strong phase-shift mask techniques, through a two electromagnetic beam interference imaging process, are known in the art of microlithography to form imaging results for features of a size well below the limit of conventional prior art imaging.
摘要翻译： 在光刻工艺中将来自光化光源的光强相移的系统和方法包括将来自电磁光束源的光束聚焦到适于根据预定图案选择性地相移光束的至少一部分的掩模 。 光束从光化光源通过掩模产生相移光束，并且相移光束被引导到诸如半导体晶片的衬底，其适于根据预定图案被选择性地蚀刻。 强相移用于基本上消除相移光束中的零级光。 通过两个电磁束干涉成像过程的强相移掩模技术在微光刻技术中是已知的，以形成远远低于传统现有技术成像极限的特征的成像结果。
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8.发明授权公开(公告)号：US06556361B1
公开(公告)日：2003-04-29
申请号：US09528272
申请日：2000-03-17
申请人： Bruce W. Smith , John S. Petersen
发明人： Bruce W. Smith , John S. Petersen
IPC分类号： G02B908
CPC分类号： G03F7/70058 , G03F7/70091 , G03F7/70425
摘要： A imaging tool for use with a mask with features oriented along at least an x-axis or a y-axis where the x-axis extends in directions substantially perpendicular to the directions of the y-axis. The tool has a condenser lens with a condenser plate which is located in a condenser lens pupil plane and which has a condenser aperture with four-sides. The sides of the condenser aperture are oriented in substantially the same direction as either the x-axis or the y-axis. The condenser lens is positioned to place at least a portion of any illumination on at least a portion of the mask.
摘要翻译： 一种用于与面罩一起使用的成像工具，其特征是至少沿x轴或y轴定向，其中x轴沿基本上垂直于y轴方向的方向延伸。 该工具具有聚光透镜，其具有位于聚光透镜光瞳平面中并且具有四面的聚光器孔的聚光板。 冷凝器孔的侧面被定向在与x轴或y轴基本相同的方向上。 聚光透镜被定位成将任何照明的至少一部分放置在掩模的至少一部分上。
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公开(公告)号：US5969090A
公开(公告)日：1999-10-19
申请号：US185157
申请日：1998-11-03
IPC分类号： A61K31/785 , A61K31/787 , C08F8/00 , C08F8/02 , C08F8/44 , C08F26/02 , C08F220/34 , C08F220/60 , C08G67/02
CPC分类号： A61K31/785 , A61K31/787 , C08F220/34 , C08F220/60 , C08F26/02 , C08F8/00 , C08F8/02 , C08F8/44
摘要： The present invention relates to a poly(allylamine) polymer and, more generally, a hydrocarbon amine polymer. Preferably, these polymers are crosslinked. The present invention also relates to methods of forming these polymers and methods for their use. Further, the present invention relates to alkylating agents that can be employed to form the polymers and to methods for forming the alkylating agents. Generally, the polymer sequestrant includes a substituent bound to an amine of the polymer. The substituent includes a quaternary amine-containing moiety having one, two or three terminal hydrophobic substituents. A method of preparing quaternary amine-containing alkylating agents includes reacting an unsymmetrical dihalide with a tertiary amine having at least one hydrophobic substituent. A method for binding bile salts of bile acids in a mammal includes orally administering to the mammal a therapeutically-effective amount of the polymer sequestrant.
摘要翻译： 本发明涉及聚（烯丙胺）聚合物，更一般地，涉及烃胺聚合物。 优选地，这些聚合物是交联的。 本发明还涉及形成这些聚合物的方法及其使用方法。 此外，本发明涉及可用于形成聚合物的烷基化剂和形成烷基化剂的方法。 通常，聚合物螯合剂包括与聚合物的胺结合的取代基。 取代基包括具有一个，两个或三个末端疏水取代基的含季胺的部分。 制备含季铵烷基化剂的方法包括使不对称二卤化物与具有至少一个疏水取代基的叔胺反应。 用于结合哺乳动物胆汁酸胆汁的方法包括向哺乳动物口服给予治疗有效量的聚合物螯合剂。
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10.发明授权Hydrophilic nonamine-containing and amine-containing copolymers and their use as bile acid sequestrants 失效含亲水性非胺和含胺共聚物及其作为胆汁酸螯合剂的用途
公开(公告)号：US5929184A
公开(公告)日：1999-07-27
申请号：US999029
申请日：1997-12-29
IPC分类号： A61K31/785 , B01D15/00 , B01J39/00 , C08F6/00
CPC分类号： A61K31/785 , C08F6/008
摘要： The present invention relates to polymer compositions and methods of using said compositions for sequestering bile acids in a patient. The polymer compositions of this invention comprise a copolymer characterized by one or more hydrophilic nonamine-containing monomers or repeat units and one or more amine-containing monomers or repeat units. The amine-containing monomers or repeat units of the polymer compositions have one or more substituents bound to a portion of the amine nitrogens. The substituent or substituents which are bound to the amine nitrogens of the polymer composition can include a hydrophobic moiety and/or a quaternary amine-containing moiety. Suitable amine-containing monomers or repeat units include, but are not limited to, for example, vinylamine, allylamine, diallylamine, diallylmethylamine, and ethyleneimine, which are appropriately substituted, as described above.The hydrophilic nonamine-containing monomer can be, but is not limited to, for example, allyl alcohol, vinyl alcohol, ethylene oxide, propylene oxide, hydroxyethylacrylate, hydroxyethylmethacrylate, hydroxypropylacrylate, hydroxypropylmethacrylate, poly(propyleneglycol) monomethacrylate, poly(ethyleneglycol) monomethacrylate, acrylic acid, carbon dioxide, and sulfur dioxide. Typically, the hydrophilic nonamine-containing monomer or repeat unit comprises from about 10 to about 90 mole percent of the polymer composition.
摘要翻译： 本发明涉及聚合物组合物和使用所述组合物在患者体内螯合胆汁酸的方法。 本发明的聚合物组合物包含一种共聚物，其特征在于一种或多种含亲水性非胺的单体或重复单元和一种或多种含胺单体或重复单元。 聚合物组合物的含胺单体或重复单元具有一个或多个与一部分胺氮结合的取代基。 与聚合物组合物的胺氮键合的取代基或取代基可以包括疏水部分和/或含季胺的部分。 合适的含胺单体或重复单元包括但不限于如上所述的适当取代的乙烯胺，烯丙胺，二烯丙基胺，二烯丙基甲胺和乙烯亚胺。 含亲水非胺的单体可以是但不限于例如烯丙醇，乙烯醇，环氧乙烷，环氧丙烷，丙烯酸羟乙酯，甲基丙烯酸羟乙酯，丙烯酸羟丙酯，甲基丙烯酸羟丙酯，单（甲基）丙烯酸聚（乙二醇），单甲基丙烯酸聚（乙二醇） 丙烯酸，二氧化碳和二氧化硫。 通常，含亲水非胺的单体或重复单元包含约10至约90摩尔％的聚合物组合物。
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