摘要:
The present invention is a high voltage semiconductor switch that is formed from a chain of series coupled cascode circuits. In one embodiment, the switch may be a single-throw configuration coupled between an output and a direct current (DC) reference. In an alternate embodiment, the switch may be a double-throw configuration such that the output is switched between either a first DC reference or a second DC reference, such as ground. Each cascode circuit may have clamp circuits to prevent over voltage during switching transitions. The series coupled cascode circuits may be formed using discrete components or on a silicon-on-insulator (SOI) wafer, which may have a Silicon Dioxide insulator layer or a Sapphire insulator layer.
摘要:
The present invention is an inductive element formed by a printed circuit board (PCB), which includes holes in the insulating layers that are filled with non-conductive material having high magnetic permeability, to reduce the magnetic reluctance of a magnetic path of the inductive element. Some embodiments of the present invention may use non-conductive materials having high magnetic permeability to connect the filled holes, such that a contiguous magnetic path is formed, which significantly reduces the reluctance of the contiguous magnetic path. Reducing the reluctance increases the inductance of the inductive element.
摘要:
The present invention provides a dual mode amplifier capable of operating in a common (even) mode for one frequency band and a differential (odd) mode for a second frequency band. In the common mode, the amplifier provides two identical signals to a matching network, and in the differential mode, the amplifier provides two signals that are 180° out-of-phase from one another to the matching network. The matching network is configured to maintain the same input and output impedance regardless of whether the amplifier is operating in the common or differential mode. Furthermore, the matching network is preferably configured to terminate second harmonics for each frequency band without affecting the fundamental tone for the other bands, even if the bands are an octave apart. Since the matching network operates on two signals, either common or differential signals, a power combining network is typically required to combine the two signals into a single signal for transmission.
摘要:
The present invention relates to an adaptable RF impedance translation circuit that includes a first group of inductive elements cascaded in series between an input and an output without any series switching elements, a second group of inductive elements cascaded in series, and a group of switching elements that are capable of electrically coupling the first group of inductive elements to the second group of inductive elements. Further, the adaptable RF impedance translation circuit includes at least one variable shunt capacitance circuit electrically coupled between a common reference and at least one connection node in the adaptable RF impedance translation circuit, which includes control circuitry to select either an OFF state or an ON state associated with each of the switching elements and to select a capacitance associated with each variable shunt capacitance circuit to control impedance translation characteristics of the adaptable RE impedance translation circuit.
摘要:
The present invention is a switching power converter that supports both a boost mode of operation and a buck mode of operation, uses one energy storage element, transitions smoothly between boosting and bucking, and avoids simultaneous boosting and bucking. The switching power converter uses a common duty-cycle timing signal and a common duty-cycle setpoint signal to provide a smooth transition between boosting and bucking, and to eliminate overlap between boosting and bucking. A voltage input error integrator is used to integrate out errors between an output voltage and a setpoint voltage to provide the common duty-cycle setpoint signal. Duty-cycle error integrators are used to integrate out errors between the common duty-cycle setpoint signal and the actual duty-cycle of either the buck converter or the boost converter. Non-overlapping boost operating and buck operating ranges are provided by the common duty-cycle setpoint signal.
摘要:
A bias network uses resistive biasing, active biasing and current mirror biasing in combination to enhance RF power amplifier linearity and efficiency by forming a bias network that provides temperature compensation, minimizes current drain requirements for the Vbias source and reduces the level of RF linear amplifier quiescent current.
摘要:
Embodiments of methods of non-destructively testing whether a laminated substrate satisfies structural requirements are disclosed herein. Additionally, laminated substrates that can be non-destructively tested are also disclosed along with methods of manufacturing the same. To non-destructively test whether the laminated substrates satisfies the structural requirement, an electrical characteristic of the laminated substrate may be detected. Since the detected electrical characteristic is related to a structural characteristic being tested, whether the structural characteristic complies with the structural requirement can be determined based on the electrical characteristic.
摘要:
The present invention relates to integration of a lateral high-voltage metal oxide semiconductor field effect transistor (LHV-MOSFET) with other circuitry on a semiconductor wafer, which may be fabricated using low-voltage foundry technology, such as a low-voltage complementary metal oxide semiconductor (LV-CMOS) process. The other circuitry may include low-voltage devices, such as switching transistors used in logic circuits, computer circuitry, and the like, or other high-voltage devices, such as a microelectromechanical system (MEMS) switch. The source to drain voltage capability of the LHV-MOSFET may be increased by using an intrinsic material between the source and the drain. The gate voltage capability of the LHV-MOSFET may be increased by using an insulator material, such as a thick oxide, between the gate and the channel of the LHV-MOSFET.
摘要:
The present invention is a high efficiency AM switching voltage regulator used to provide an AM output signal to an AM RF power amplifier, wherein the AM output signal is proportional to an AM input signal. The AM output signal includes an AM output voltage and an AM supply current, which represents a sum of an AM output current and a shunt current The AM output voltage provides an envelope supply voltage to the AM RF power amplifier. The switching voltage regulator includes a switching current regulator coupled to a linear shunt voltage regulator. The switching current regulator provides AM output current for the AM RF power amplifier and a small amount of shunt current for the linear shunt voltage regulator, which regulates the AM output voltage by controlling the shunt current. The switching current regulator regulates the AM supply current in proportion to a time-averaged value of shunt current.
摘要:
A bias network uses resistive biasing, active biasing and current mirror biasing in combination to enhance RF power amplifier linearity and efficiency by forming a bias network that provides temperature compensation, minimizes current drain requirements for the Vbias source and reduces the level of RF linear amplifier quiescent current.