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公开(公告)号：US07633095B1
公开(公告)日：2009-12-15
申请号：US12140517
申请日：2008-06-17
IPC分类号： H01L29/74 , H01L29/423 , H01L29/45
CPC分类号： H01L29/7833 , H01L29/1045 , H01L29/42364 , H01L29/7436 , H01L29/7835 , H01L29/861 , H03K3/352 , H03K19/017545
摘要： Integrating high-voltage devices with other circuitry, which may be fabricated on a semiconductor wafer using low-voltage foundry technology, such as a low-voltage complementary metal oxide semiconductor (LV-CMOS) process. The other circuitry may include low-voltage devices, such as switching transistors used in logic circuits, computer circuitry, and the like, or other high-voltage devices, such as a microelectromechanical system (MEMS) switch. The high-voltage devices may be used to create useful high-voltage circuits, such as level-shifting circuits, input protection circuits, charge pump circuits, switching circuits, latch circuits, latching switch circuits, interface circuits, any combination thereof, or the like. The high-voltage circuits may be controlled by the other circuitry.
摘要翻译： 将高电压设备与其他电路集成，其可以使用低电压铸造技术（例如低电压互补金属氧化物半导体（LV-CMOS））工艺在半导体晶片上制造。 另一电路可以包括诸如用于逻辑电路，计算机电路等的开关晶体管或诸如微机电系统（MEMS）开关的其他高电压器件的低电压器件。 高电压装置可用于创建有用的高电压电路，例如电平移位电路，输入保护电路，电荷泵电路，开关电路，锁存电路，闭锁开关电路，接口电路，其任何组合，或 喜欢。 高压电路可以由另一电路来控制。
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2.发明授权Integrated lateral high-voltage metal oxide semiconductor field effect transistor 有权集成横向高压金属氧化物半导体场效应晶体管公开(公告)号：US07989889B1
公开(公告)日：2011-08-02
申请号：US12140491
申请日：2008-06-17
IPC分类号： H01L29/66
CPC分类号： H01L29/868 , H01L29/1045 , H01L29/66659 , H01L29/7436 , H01L29/7835 , H03F3/213
摘要： The present invention relates to integration of a lateral high-voltage metal oxide semiconductor field effect transistor (LHV-MOSFET) with other circuitry on a semiconductor wafer, which may be fabricated using low-voltage foundry technology, such as a low-voltage complementary metal oxide semiconductor (LV-CMOS) process. The other circuitry may include low-voltage devices, such as switching transistors used in logic circuits, computer circuitry, and the like, or other high-voltage devices, such as a microelectromechanical system (MEMS) switch. The source to drain voltage capability of the LHV-MOSFET may be increased by using an intrinsic material between the source and the drain. The gate voltage capability of the LHV-MOSFET may be increased by using an insulator material, such as a thick oxide, between the gate and the channel of the LHV-MOSFET.
摘要翻译： 本发明涉及横向高压金属氧化物半导体场效应晶体管（LHV-MOSFET）与半导体晶片上的其它电路的集成，其可以使用低压铸造技术制造，例如低电压互补金属 氧化物半导体（LV-CMOS）工艺。 另一电路可以包括诸如用于逻辑电路，计算机电路等的开关晶体管或诸如微机电系统（MEMS）开关的其他高电压器件的低电压器件。 可以通过在源极和漏极之间使用本征材料来增加LHV-MOSFET的漏极电压能力源。 可以通过在LHV-MOSFET的栅极和沟道之间使用诸如厚氧化物的绝缘体材料来增加LHV-MOSFET的栅极电压能力。
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公开(公告)号：US08164110B1
公开(公告)日：2012-04-24
申请号：US12949296
申请日：2010-11-18
IPC分类号： H01L29/74
CPC分类号： H01L29/868 , H01L29/1045 , H01L29/42364 , H01L29/7436 , H01L29/7833 , H01L29/861 , H03K3/352
摘要： The present invention relates to integration of lateral high-voltage devices, such as a lateral high-voltage diode (LHVD) or a lateral high-voltage thyristor, with other circuitry on a semiconductor wafer, which may be fabricated using low-voltage foundry technology, such as a low-voltage complementary metal oxide semiconductor (LV-CMOS) process. The other circuitry may include low-voltage devices, such as switching transistors used in logic circuits, computer circuitry, or the like, or other high-voltage devices, such as a microelectromechanical system (MEMS) switch. The reverse breakdown voltage capability of the LHVD may be increased by using an intrinsic material between the anode and the cathode. Similarly, in a lateral high-voltage thyristor, such as a lateral high-voltage Silicon-controlled rectifier (LHV-SCR), the withstand voltage capability of the LHV-SCR may be increased by using an intrinsic material between the anode and the cathode.
摘要翻译： 本发明涉及诸如横向高压二极管（LHVD）或横向高压晶闸管的横向高压器件与半导体晶片上的其它电路的集成，其可以使用低压铸造技术 ，例如低电压互补金属氧化物半导体（LV-CMOS）工艺。 另一电路可以包括诸如用于逻辑电路，计算机电路等的开关晶体管或诸如微机电系统（MEMS）开关的其他高电压器件的低电压器件。 可以通过在阳极和阴极之间使用本征材料来增加LHVD的反向击穿电压能力。 类似地，在横向高压晶闸管（例如横向高压可硅可控整流器（LHV-SCR））中，可以通过在阳极和阴极之间使用本征材料来增加LHV-SCR的耐受电压能力 。
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公开(公告)号：US07859009B1
公开(公告)日：2010-12-28
申请号：US12140504
申请日：2008-06-17
IPC分类号： H01L29/74
CPC分类号： H01L29/868 , H01L29/1045 , H01L29/42364 , H01L29/7436 , H01L29/7833 , H01L29/861 , H03K3/352
摘要： The present invention relates to integration of lateral high-voltage devices, such as a lateral high-voltage diode (LHVD) or a lateral high-voltage thyristor, with other circuitry on a semiconductor wafer, which may be fabricated using low-voltage foundry technology, such as a low-voltage complementary metal oxide semiconductor (LV-CMOS) process. The other circuitry may include low-voltage devices, such as switching transistors used in logic circuits, computer circuitry, or the like, or other high-voltage devices, such as a microelectromechanical system (MEMS) switch. The reverse breakdown voltage capability of the LHVD may be increased by using an intrinsic material between the anode and the cathode. Similarly, in a lateral high-voltage thyristor, such as a lateral high-voltage Silicon-controlled rectifier (LHV-SCR), the withstand voltage capability of the LHV-SCR may be increased by using an intrinsic material between the anode and the cathode.
摘要翻译： 本发明涉及诸如横向高压二极管（LHVD）或横向高压晶闸管的横向高压器件与半导体晶片上的其它电路的集成，其可以使用低压铸造技术 ，例如低电压互补金属氧化物半导体（LV-CMOS）工艺。 另一电路可以包括诸如用于逻辑电路，计算机电路等的开关晶体管或诸如微机电系统（MEMS）开关的其他高电压器件的低电压器件。 可以通过在阳极和阴极之间使用本征材料来增加LHVD的反向击穿电压能力。 类似地，在横向高压晶闸管（例如横向高压可硅可控整流器（LHV-SCR））中，可以通过在阳极和阴极之间使用本征材料来增加LHV-SCR的耐受电压能力 。
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公开(公告)号：US07999643B1
公开(公告)日：2011-08-16
申请号：US12129928
申请日：2008-05-30
申请人： David C. Dening , Tony Ivanov , Julio Costa
发明人： David C. Dening , Tony Ivanov , Julio Costa
IPC分类号： H01H51/22
CPC分类号： H01H1/0036 , H01H1/66 , H01H59/0009 , Y10T307/747 , Y10T307/76
摘要： The present invention relates to providing a uniform operating environment for each of multiple devices by providing a common environment to the devices. The common environment is provided by multiple cavities, which are interconnected by at least one environmental pathway, which may be provided by at least one tunnel. The common environment may help provide uniform operating pressure, which may be a partial or near vacuum, a surrounding gas of uniform contents, such as an inert gas or mixture of inert gases, or both. The devices may include micro-electro-mechanical system (MEMS) devices, such as MEMS switches.
摘要翻译： 本发明涉及通过向设备提供公共环境来为多个设备中的每一个提供统一的操作环境。 共同的环境由多个空腔提供，多个空腔通过至少一个环境路径互连，其可由至少一个隧道提供。 常见的环境可能有助于提供均匀的操作压力，其可以是均匀内容物的周围气体的部分或接近真空，例如惰性气体或惰性气体的混合物，或两者。 这些装置可以包括诸如MEMS开关的微机电系统（MEMS）装置。
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公开(公告)号：US08723260B1
公开(公告)日：2014-05-13
申请号：US12723257
申请日：2010-03-12
申请人： Michael Carroll , Daniel Charles Kerr , Christian Rye Iversen , Philip Mason , Julio Costa , Edward T. Spears
发明人： Michael Carroll , Daniel Charles Kerr , Christian Rye Iversen , Philip Mason , Julio Costa , Edward T. Spears
IPC分类号： H01L21/00
CPC分类号： H01L21/84 , H01L21/743 , H01L27/1203 , H01L29/4238 , H01L29/7833
摘要： The present disclosure relates to a radio frequency (RF) switch that includes multiple body-contacted field effect transistor (FET) elements coupled in series. The FET elements may be formed using a thin-film semiconductor device layer, which is part of a thin-film semiconductor die. Conduction paths between the FET elements through the thin-film semiconductor device layer and through a substrate of the thin-film semiconductor die may be substantially eliminated by using insulating materials. Elimination of the conduction paths allows an RF signal across the RF switch to be divided across the series coupled FET elements, such that each FET element is subjected to only a portion of the RF signal. Further, each FET element is body-contacted and may receive reverse body biasing when the RF switch is in an OFF state, thereby reducing an OFF state drain-to-source capacitance of each FET element.
摘要翻译： 本发明涉及射频（RF）开关，其包括串联耦合的多个体接触场效应晶体管（FET）元件。 可以使用作为薄膜半导体管芯的一部分的薄膜半导体器件层来形成FET元件。 通过薄膜半导体器件层和通过薄膜半导体晶片的衬底的FET元件之间的导通路径可以通过使用绝缘材料基本上消除。 消除导通路径允许跨越RF开关的RF信号在串联耦合的FET元件之间被分开，使得每个FET元件仅受到RF信号的一部分的影响。 此外，当RF开关处于OFF状态时，每个FET元件被体接触并且可以接收反向主体偏置，从而降低每个FET元件的截止状态漏极 - 源极电容。
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公开(公告)号：US09892879B2
公开(公告)日：2018-02-13
申请号：US13348277
申请日：2012-01-11
申请人： Jonathan Hale Hammond , Julio Costa
发明人： Jonathan Hale Hammond , Julio Costa
CPC分类号： H01H49/00 , B81B2201/014 , B81C1/0023 , B81C2203/0145 , H01H1/0036 , H01H59/0009
摘要： Encapsulated MEMS switches are disclosed along with methods of manufacturing the same. A non-polymer based sacrificial layer is used to form the actuation member of the MEMS switch while a polymer based sacrificial layer is used to form the enclosure that encapsulates the MEMS switch. The first non-polymer based sacrificial layer allows for highly reliable MEMS switches to be manufactured while also protecting the MEMS switch from carbon contamination. The polymer based sacrificial layer allows for the manufacture of more spatially efficient encapsulated MEMS switches.
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公开(公告)号：US20120218047A1
公开(公告)日：2012-08-30
申请号：US13405481
申请日：2012-02-27
申请人： Julio Costa , Michael Carroll
发明人： Julio Costa , Michael Carroll
CPC分类号： H01L29/7325 , H01L23/66 , H01L29/0692 , H01L29/7371 , H01L2223/6644 , H01L2224/13022 , H01L2224/131 , H01L2224/13147 , H01L2224/16113 , H01L2224/16225 , H01L2224/16227 , H01L2924/01037 , H01L2924/1305 , H01L2924/014 , H01L2924/00
摘要： Power amplification devices are disclosed having a vertical ballast configuration to prevent thermal runaway in at least one stack of bipolar transistors formed on a semiconductor substrate. To provide a negative feedback to prevent thermal runaway in the bipolar transistors, a conductive layer is formed over and coupled to the stack. A resistivity of the conductive layer provides an effective resistance that prevents thermal runaway in the bipolar transistors. The vertical placement of the conductive layer allows for vertical heat dissipation and thus provides ballasting without concentrating heat.
摘要翻译： 公开了具有垂直镇流器配置的功率放大器件，以防止形成在半导体衬底上的至少一个双极晶体管堆叠中的热失控。 为了提供负反馈以防止双极晶体管中的热失控，导电层形成在堆叠上并耦合到堆叠。 导电层的电阻率提供了防止双极晶体管中的热失控的有效电阻。 导电层的垂直放置允许垂直散热，从而在不集中热的情况下提供压载。
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公开(公告)号：US20110299432A1
公开(公告)日：2011-12-08
申请号：US12959512
申请日：2010-12-03
申请人： Joshua J. Caron , Julio Costa , Todd Gillenwater
发明人： Joshua J. Caron , Julio Costa , Todd Gillenwater
IPC分类号： H04W4/00
CPC分类号： H04B1/52
摘要： Embodiments disclosed herein relate to programmable duplexers. The frequency pass band of the programmable duplexer is changed according to a selection of a channel-pair selection to control or maximize the transition band between the receiver path and the transmitter path. The programmable duplexer permits selections of desired pass bands without the need for multiple duplexer filters. As an additional advantage, the transmission band requirements become less sensitive to manufacturing tolerances and temperature variations.
摘要翻译： 本文公开的实施例涉及可编程双工器。 可编程双工器的频带根据通道对选择的选择而改变，以控制或最大化接收机路径与发射机路径之间的过渡频带。 可编程双工器允许选择所需的通带，而不需要多个双工器滤波器。 作为额外的优点，传输带要求对于制造公差和温度变化的敏感度降低。
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公开(公告)号：US06664574B2
公开(公告)日：2003-12-16
申请号：US09945683
申请日：2001-09-05
申请人： Misbahul Azam , Gary Loechelt , Julio Costa
发明人： Misbahul Azam , Gary Loechelt , Julio Costa
IPC分类号： H01L310328
CPC分类号： H01L29/66242 , H01L27/082 , H01L29/7378
摘要： A semiconductor component (100) includes a semiconductor substrate (16) that is formed with trench (27). A semiconductor layer (20) is formed in the trench for coupling a control signal (VB) through a sidewall (25) of the trench to route a current (Ic) through a bottom surface (23) of the trench.
摘要翻译： 半导体部件（100）包括形成有沟槽（27）的半导体衬底（16）。 在沟槽中形成半导体层（20），用于通过沟槽的侧壁（25）耦合控制信号（VB），以使电流（Ic）穿过沟槽的底表面（23）。
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