Channeled dielectric re-recordable data storage medium
    1.
    发明授权
    Channeled dielectric re-recordable data storage medium 有权
    信道介质可记录数据存储介质

    公开(公告)号:US07149155B2

    公开(公告)日:2006-12-12

    申请号:US10251568

    申请日:2002-09-20

    IPC分类号: G11B11/00

    摘要: A re-recordable data storage medium is disclosed. One embodiment of the medium includes a dielectric material and a filler material. The dielectric material is organized in columnar channels over which memory cells are logically distributed. The filler material is within the columnar channels to realize the memory cells. The filler material of each memory cell has at least a first configuration and a second configuration. The first configuration corresponds to a first storable logical value, and the second configuration corresponds to a second storable logical value.

    摘要翻译: 公开了可重新记录的数据存储介质。 介质的一个实施例包括电介质材料和填充材料。 介电材料组织在柱状通道上,存储器单元在其上逻辑分布。 填充材料在柱状通道内以实现存储单元。 每个存储单元的填充材料至少具有第一配置和第二配置。 第一配置对应于第一可存储逻辑值,第二配置对应于第二可存储逻辑值。

    Emitter with filled zeolite emission layer
    2.
    发明授权
    Emitter with filled zeolite emission layer 有权
    具有填充沸石发射层的发射体

    公开(公告)号:US06783418B2

    公开(公告)日:2004-08-31

    申请号:US10758801

    申请日:2004-01-15

    IPC分类号: H01J924

    摘要: An emitter includes an electron supply layer, a dielectric layer on the electron supply layer defining an emission area, and a filled zeolite emission layer within the defined emission area and in contact with the electron supply layer. The filled zeolite emission layer holds a semiconductor material within the cage of the zeolite.

    摘要翻译: 发射体包括电子供应层,电子供应层上限定发射区的电介质层,以及在限定的发射区内并与电子供应层接触的填充的沸石发射层。 填充的沸石发射层将半导体材料保持在沸石的保持架内。

    Low temperature silicided tip
    5.
    发明申请
    Low temperature silicided tip 失效
    低温硅化尖端

    公开(公告)号:US20050157562A1

    公开(公告)日:2005-07-21

    申请号:US10759565

    申请日:2004-01-16

    IPC分类号: G11C5/00

    摘要: A tip, connected to a metal chip component, for forming readable changes in a memory storage system is disclosed. The tip includes a conductive layer, an amorphous silicon layer, and a silicide outer layer. The silicide outer layer contains a metal that has an anneal temperature to form the silicide outer layer at a temperature below that which damages the chip component.

    摘要翻译: 公开了连接到金属芯片部件的用于形成存储器存储系统中的可读变化的尖端。 尖端包括导电层,非晶硅层和硅化物外层。 硅化物外层含有具有退火温度以在低于破坏芯片部件的温度下形成硅化物外层的金属。

    Method of manufacturing an emitter
    7.
    发明授权
    Method of manufacturing an emitter 失效
    制造发射体的方法

    公开(公告)号:US06703252B2

    公开(公告)日:2004-03-09

    申请号:US10066149

    申请日:2002-01-31

    IPC分类号: H01L2166

    摘要: A method is disclosed for creating an emitter having a flat cathode emission surface: First a protective layer that is conductive is formed on the flat cathode emission surface. Then an electronic lens structure is created over the protective layer. Finally, the protective layer is etched to expose the flat cathode emission surface.

    摘要翻译: 公开了一种用于产生具有平坦的阴极发射表面的发射体的方法:首先在平坦的阴极发射表面上形成导电的保护层。 然后在保护层上形成电子透镜结构。 最后,蚀刻保护层以暴露平坦的阴极发射表面。