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1.发明申请COMPOSITION USEFUL FOR REMOVAL OF POST-ETCH PHOTORESIST AND BOTTOM ANTI-REFLECTION COATINGS 有权用于去除蚀刻后胶片和底漆抗反射涂层的组合物公开(公告)号：US20090215659A1
公开(公告)日：2009-08-27
申请号：US11813497
申请日：2006-01-09
IPC分类号： G03F7/42
摘要： An aqueous-based composition and process for removing hardened photoresist and/or bottom anti-reflective coating (BARC) material from a microelectronic device having same thereon. The aqueous-based composition includes at least one chaotropic solute, at least one alkaline base, and deionized water. The composition achieves high-efficiency removal of hardened photoresist and/or BARC material in the manufacture of integrated circuitry without adverse effect to metal species on the substrate, such as copper, and without damage to low-k dielectric materials employed in the microelectronic device architecture.
摘要翻译： 一种水性组合物和从其上具有其的微电子器件去除硬化的光致抗蚀剂和/或底部抗反射涂层（BARC）材料的方法。 水基组合物包括至少一种离液序列溶质，至少一种碱性碱和去离子水。 组合物在集成电路的制造中实现了高效去除硬化的光致抗蚀剂和/或BARC材料，而不会对衬底（例如铜）上的金属物质产生不利影响，并且不损害在微电子器件结构中使用的低k电介质材料 。
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2.发明授权Composition useful for removal of post-etch photoresist and bottom anti-reflection coatings 有权用于去除蚀刻后光致抗蚀剂和底部防反射涂层的组合物公开(公告)号：US07994108B2
公开(公告)日：2011-08-09
申请号：US11813497
申请日：2006-01-09
IPC分类号： G03F7/32
摘要： An aqueous-based composition and process for removing hardened photoresist and/or bottom anti-reflective coating (BARC) material from a microelectronic device having same thereon. The aqueous-based composition includes at least one chaotropic solute, at least one alkaline base, and deionized water. The composition achieves high-efficiency removal of hardened photoresist and/or BARC material in the manufacture of integrated circuitry without adverse effect to metal species on the substrate, such as copper, and without damage to low-k dielectric materials employed in the microelectronic device architecture.
摘要翻译： 一种水性组合物和从其上具有其的微电子器件去除硬化的光致抗蚀剂和/或底部抗反射涂层（BARC）材料的方法。 水基组合物包括至少一种离液序列溶质，至少一种碱性碱和去离子水。 组合物在集成电路的制造中实现了高效去除硬化的光致抗蚀剂和/或BARC材料，而不会对衬底（例如铜）上的金属物质产生不利影响，并且不损害在微电子器件结构中使用的低k电介质材料 。
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公开(公告)号：US08679734B2
公开(公告)日：2014-03-25
申请号：US13568790
申请日：2012-08-07
CPC分类号： C11D3/30 , C11D1/72 , C11D3/044 , C11D3/3947 , C11D3/3955 , C11D3/3956 , C11D3/43 , C11D7/06 , C11D7/3209 , C11D7/3281 , C11D7/34 , C11D7/50 , C11D11/0047 , C23G1/20 , G03F7/423 , G03F7/425 , H01L21/02052 , H01L21/0206 , H01L21/31116 , H01L21/31133 , Y10S438/906
摘要： Disclosed herein is a composition and method for semiconductor processing. In one embodiment, a wet-cleaning composition for removal of photoresist is provided. The composition comprises a strong base; an oxidant; and a polar solvent. In another embodiment, a method for removing photoresist is provided. The method comprises the steps of applying a wet-cleaning composition comprising about 0.1 to about 30 weight percent strong base; about one to about 30 weight percent oxidant; about 20 to about 95 weight percent polar solvent; and removing the photoresist.
摘要翻译： 本文公开了一种用于半导体处理的组合物和方法。 在一个实施方案中，提供了用于去除光致抗蚀剂的湿清洁组合物。 组合物包含强碱; 氧化剂 和极性溶剂。 在另一个实施例中，提供了一种去除光刻胶的方法。 该方法包括以下步骤：施加包含约0.1至约30重量％的强碱的湿清洁组合物; 约1到约30重量％的氧化剂; 约20至约95重量％的极性溶剂; 并去除光致抗蚀剂。
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4.发明申请Metal and Dielectric Compatible Sacrificial Anti-Reflective Coating Cleaning and Removal Composition 有权金属和电介质兼容的牺牲防反射涂层清洁和去除组合物公开(公告)号：US20080242574A1
公开(公告)日：2008-10-02
申请号：US11916891
申请日：2006-06-07
IPC分类号： G03F7/42
CPC分类号： C11D11/0047 , C11D7/08 , C11D7/10 , C11D7/261 , C11D7/263 , C11D7/265 , C11D7/28 , C11D7/34 , C11D7/50 , G03F7/423
摘要： A liquid removal composition and process for removing sacrificial anti-reflective coating (SARC) material from a substrate having same thereon. The liquid removal composition includes at least one fluoride-containing compound, at least one organic solvent, optionally water, and optionally at least one chelating agent. The composition achieves at least partial removal of SARC material in the manufacture of integrated circuitry with minimal etching of metal species on the substrate, such as aluminum, copper and cobalt alloys, and without damage to low-k dielectric materials employed in the semiconductor architecture.
摘要翻译： 一种液体去除组合物和从其上具有其的基材去除牺牲抗反射涂层（SARC）材料的方法。 液体去除组合物包括至少一种含氟化物的化合物，至少一种有机溶剂，任选的水和任选的至少一种螯合剂。 该组合物在集成电路的制造中至少部分去除SARC材料，同时对基板上的金属物质（例如铝，铜和钴合金）进行最小蚀刻，并且不损坏在半导体结构中使用的低k电介质材料。
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5.发明授权Metal and dielectric compatible sacrificial anti-reflective coating cleaning and removal composition 有权金属和电介质兼容的牺牲抗反射涂层清洗和去除组成公开(公告)号：US08951948B2
公开(公告)日：2015-02-10
申请号：US11916891
申请日：2006-06-07
CPC分类号： C11D11/0047 , C11D7/08 , C11D7/10 , C11D7/261 , C11D7/263 , C11D7/265 , C11D7/28 , C11D7/34 , C11D7/50 , G03F7/423
摘要： A liquid removal composition and process for removing sacrificial anti-reflective coating (SARC) material from a substrate having same thereon. The liquid removal composition includes at least one fluoride-containing compound, at least one organic solvent, optionally water, and optionally at least one chelating agent. The composition achieves at least partial removal of SARC material in the manufacture of integrated circuitry with minimal etching of metal species on the substrate, such as aluminum, copper and cobalt alloys, and without damage to low-k dielectric materials employed in the semiconductor architecture.
摘要翻译： 一种液体去除组合物和从其上具有其的基材去除牺牲抗反射涂层（SARC）材料的方法。 液体去除组合物包括至少一种含氟化物的化合物，至少一种有机溶剂，任选的水和任选的至少一种螯合剂。 该组合物在集成电路的制造中至少部分去除SARC材料，同时对基板上的金属物质（例如铝，铜和钴合金）进行最小蚀刻，并且不损坏在半导体结构中使用的低k电介质材料。
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公开(公告)号：US20120302483A1
公开(公告)日：2012-11-29
申请号：US13568790
申请日：2012-08-07
IPC分类号： G03F7/42
CPC分类号： C11D3/30 , C11D1/72 , C11D3/044 , C11D3/3947 , C11D3/3955 , C11D3/3956 , C11D3/43 , C11D7/06 , C11D7/3209 , C11D7/3281 , C11D7/34 , C11D7/50 , C11D11/0047 , C23G1/20 , G03F7/423 , G03F7/425 , H01L21/02052 , H01L21/0206 , H01L21/31116 , H01L21/31133 , Y10S438/906
摘要： Disclosed herein is a composition and method for semiconductor processing. In one embodiment, a wet-cleaning composition for removal of photoresist is provided. The composition comprises a strong base; an oxidant; and a polar solvent. In another embodiment, a method for removing photoresist is provided. The method comprises the steps of applying a wet-cleaning composition comprising about 0.1 to about 30 weight percent strong base; about one to about 30 weight percent oxidant; about 20 to about 95 weight percent polar solvent; and removing the photoresist.
摘要翻译： 本文公开了一种用于半导体处理的组合物和方法。 在一个实施方案中，提供了用于去除光致抗蚀剂的湿清洁组合物。 组合物包含强碱; 氧化剂 和极性溶剂。 在另一个实施例中，提供了一种去除光致抗蚀剂的方法。 该方法包括以下步骤：施加包含约0.1至约30重量％的强碱的湿清洁组合物; 约1至约30重量％的氧化剂; 约20至约95重量％的极性溶剂; 并去除光致抗蚀剂。
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7.发明授权Treatment of semiconductor substrates using long-chain organothiols or long-chain acetates 失效使用长链有机硫醇或长链乙酸酯处理半导体衬底公开(公告)号：US07326673B2
公开(公告)日：2008-02-05
申请号：US10303450
申请日：2002-11-25
申请人： Chongying Xu , David W. Minsek , Thomas H. Baum , Matthew Healy
发明人： Chongying Xu , David W. Minsek , Thomas H. Baum , Matthew Healy
CPC分类号： G03F7/425 , B08B7/0021 , C11D3/02 , C11D3/044 , C11D3/43 , C11D7/02 , C11D11/0047 , G03F7/40 , G03F7/422 , G03F7/426
摘要： Chemical formulations and methods for removing unwanted material, such as unexposed photoresist, metal oxides, CMP residue, and the like, from semiconductor wafers or other substrates. The formulations utilize a supercritical fluid-based cleaning composition, which may further include (I) co-solvent(s), (II) surfactant(s), (III) chelating agent(s), and/or (IV) chemical reactant(s).
摘要翻译： 用于从半导体晶片或其它基底去除不想要的材料（例如未曝光的光致抗蚀剂，金属氧化物，CMP残渣等）的化学配方和方法。 该制剂采用超临界流体洗涤组合物，其可进一步包括（I）助溶剂，（II）表面活性剂，（III）螯合剂和/或（Ⅳ）化学反应物 （s）。
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公开(公告)号：US08236485B2
公开(公告)日：2012-08-07
申请号：US10389214
申请日：2003-03-14
CPC分类号： C11D3/30 , C11D1/72 , C11D3/044 , C11D3/3947 , C11D3/3955 , C11D3/3956 , C11D3/43 , C11D7/06 , C11D7/3209 , C11D7/3281 , C11D7/34 , C11D7/50 , C11D11/0047 , C23G1/20 , G03F7/423 , G03F7/425 , H01L21/02052 , H01L21/0206 , H01L21/31116 , H01L21/31133 , Y10S438/906
摘要： Disclosed herein is a composition and method for semiconductor processing. In one embodiment, a wet-cleaning composition for removal of photoresist is provided. The composition comprises a strong base; an oxidant; and a polar solvent. In another embodiment, a method for removing photoresist is provided. The method comprises the steps of applying a wet-cleaning composition comprising about 0.1 to about 30 weight percent strong base; about one to about 30 weight percent oxidant; about 20 to about 95 weight percent polar solvent; and removing the photoresist.
摘要翻译： 本文公开了一种用于半导体处理的组合物和方法。 在一个实施方案中，提供了用于去除光致抗蚀剂的湿清洁组合物。 组合物包含强碱; 氧化剂 和极性溶剂。 在另一个实施例中，提供了一种去除光致抗蚀剂的方法。 该方法包括以下步骤：施加包含约0.1至约30重量％的强碱的湿清洁组合物; 约1至约30重量％的氧化剂; 约20至约95重量％的极性溶剂; 并去除光致抗蚀剂。
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9.发明申请DENSE FLUID COMPOSITIONS FOR REMOVAL OF HARDENED PHOTORESIST, POST-ETCH RESIDUE AND/OR BOTTOM ANTI-REFLECTIVE COATING 审中-公开用于去除硬化光催化剂，去除后残留物和/或底部抗反射涂层的DENSE流体组合物公开(公告)号：US20090192065A1
公开(公告)日：2009-07-30
申请号：US11917654
申请日：2006-06-16
IPC分类号： G03F7/42
CPC分类号： C11D11/0047 , C11D3/3947 , C11D7/08 , C11D7/264 , C11D7/265 , C11D7/32 , C11D7/34 , C11D7/5004 , G03F7/425 , G03F7/426 , H01L21/02063
摘要： A method and composition for removing hardened photoresist, post-etch photoresist, and/or bottom anti-reflective coating from a microelectronic device is described. The composition may include a dense fluid, e.g., a supercritical fluid, and a dense fluid concentrate including a co-solvent, optionally a fluoride source, and optionally an acid. The dense fluid compositions substantially remove the contaminating residue and/or layers from the microelectronic device prior to subsequent processing, thus improving the morphology, performance, reliability and yield of the microelectronic device.
摘要翻译： 描述了用于从微电子器件去除硬化的光致抗蚀剂，蚀刻后光致抗蚀剂和/或底部抗反射涂层的方法和组合物。 组合物可以包括致密流体，例如超临界流体，以及包含共溶剂，任选的氟化物源和任选的酸的致密流体浓缩物。 致密的流体组合物在随后的处理之前基本上从微电子器件去除污染的残余物和/或层，从而改善微电子器件的形态，性能，可靠性和产量。
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10.发明申请公开(公告)号：US20090032766A1
公开(公告)日：2009-02-05
申请号：US12089346
申请日：2006-10-04
IPC分类号： C09K13/00
CPC分类号： H01L21/31111 , H01L21/28052 , H01L29/6653 , H01L29/6656 , H01L29/6659 , H01L29/7833
摘要： A gate spacer oxide material removal composition and process for at least partial removal of gate spacer oxide material from a microelectronic device having same thereon. The anhydrous removal composition includes at least one organic solvent, at least one chelating agent, a base fluoride:acid fluoride component, and optionally at least one passivator. The composition achieves the selective removal of gate spacer oxide material relative to polysilicon and silicon nitride from the vicinity of the gate electrode on the surface of the microelectronic device with minimal etching of metal silicide interconnect material species employed in the gate electrode architecture.
摘要翻译： 一种栅间隔氧化物材料去除组合物和用于从其上具有其的微电子器件至少部分去除栅极间隔物氧化物材料的工艺。 无水去除组合物包括至少一种有机溶剂，至少一种螯合剂，氟化氟化物：氟化氢成分和任选的至少一种钝化剂。 该组合物通过在栅电极结构中使用的金属硅化物互连材料物质的最小蚀刻，实现了在微电子器件的表面上从栅电极附近相对于多晶硅和氮化硅选择性去除栅间隔物氧化物材料。
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