公开(公告)号：US20130137242A1

公开(公告)日：2013-05-30

申请号：US13687937

申请日：2012-11-28

Applicant: Zhian HE ,  David W. PORTER ,  Jonathan D. REID ,  Frederick D. WILMOT

Inventor： Zhian HE ,  David W. PORTER ,  Jonathan D. REID ,  Frederick D. WILMOT

IPC: C25D21/12 ,  H01L21/02

CPC classification number: C25D21/12 ,  C25D7/123 ,  C25D17/001 ,  C25D17/002 ,  C25D17/007 ,  C25D17/06 ,  C25D17/10 ,  H01L21/02697

Abstract: Methods, systems, and apparatus for plating a metal onto a work piece are described. In one aspect, an apparatus includes a plating chamber, a substrate holder, an anode chamber housing an anode, an ionically resistive ionically permeable element positioned between a substrate and the anode chamber during electroplating, an auxiliary cathode located between the anode and the ionically resistive ionically permeable element, and an insulating shield with an opening in its central region. The insulating shield may be movable with respect to the ionically resistive ionically permeable element to vary a distance between the shield and the ionically resistive ionically permeable element during electroplating.

Abstract translation: 描述了将金属电镀到工件上的方法，系统和装置。 一方面，一种装置包括电镀室，衬底保持器，容纳阳极的阳极室，在电镀期间位于衬底和阳极室之间的离子电阻离子可渗透元件，位于阳极和离子电阻之间的辅助阴极 离子渗透元件，以及在其中心区域具有开口的绝缘护罩。 绝缘屏蔽件可以相对于离子电离性离子渗透元件移动，以在电镀期间改变屏蔽层与离子电阻性离子渗透元件之间的距离。

公开(公告)号：US20130134045A1

公开(公告)日：2013-05-30

申请号：US13306527

申请日：2011-11-29

Applicant: David W. PORTER ,  Jonathan D. REID ,  Frederick D. WILMOT

Inventor： David W. PORTER ,  Jonathan D. REID ,  Frederick D. WILMOT

IPC: C25D5/00 ,  C25D21/12 ,  C25D21/00 ,  C25D17/10 ,  C25D17/00

CPC classification number: C25D17/001 ,  C25D17/002 ,  C25D17/007 ,  C25D17/06 ,  C25D17/10 ,  C25D17/12 ,  C25D21/12

Abstract: Methods, systems, and apparatus for plating a metal onto a work piece are described. In one aspect, an apparatus includes a plating chamber, a substrate holder, an anode chamber housing an anode, and an ionically resistive ionically permeable element positioned between a substrate and the anode chamber during electroplating. The anode chamber may be movable with respect to the ionically resistive ionically permeable element to vary a distance between the anode chamber and the ionically resistive ionically permeable element during electroplating. The anode chamber may include an insulating shield oriented between the anode and the ionically resistive ionically permeable element, with opening in a central region of the insulating shield.

Abstract translation: 描述了将金属电镀到工件上的方法，系统和装置。 一方面，一种设备包括电镀室，衬底保持器，容纳阳极的阳极室和在电镀期间定位在衬底和阳极室之间的离子电离性离子渗透元件。 阳极室可以相对于离子电离性离子渗透元件移动，以在电镀期间改变阳极室和离子电阻性离子可渗透元件之间的距离。 阳极室可以包括定向在阳极和离子电离性离子渗透元件之间的绝缘屏蔽，其在绝缘屏蔽的中心区域中开口。

公开(公告)号：US20120175263A1

公开(公告)日：2012-07-12

申请号：US13324890

申请日：2011-12-13

Applicant: Kousik GANESAN ,  Tighe SPURLIN ,  Jonathan D. REID ,  Shantinath GHONGADI ,  Andrew McKERROW ,  James E. DUNCAN

Inventor： Kousik GANESAN ,  Tighe SPURLIN ,  Jonathan D. REID ,  Shantinath GHONGADI ,  Andrew McKERROW ,  James E. DUNCAN

IPC: C25D5/00 ,  C25D21/12 ,  C25D21/04

CPC classification number: C25D3/38 ,  C25D5/003 ,  C25D5/08 ,  C25D7/123 ,  C25D17/001 ,  C25D21/04 ,  C25D21/14

Abstract: Methods, systems, and apparatus for plating a metal onto a work piece with a plating solution having a low oxygen concentration are described. In one aspect, a method includes reducing an oxygen concentration of a plating solution. The plating solution includes about 100 parts per million or less of an accelerator. After reducing the oxygen concentration of the plating solution, a wafer substrate is contacted with the plating solution in a plating cell. The oxygen concentration of the plating solution in the plating cell is about 1 part per million or less. A metal is electroplated with the plating solution onto the wafer substrate in the plating cell. After electroplating the metal onto the wafer substrate, an oxidizing strength of the plating solution is increased.

Abstract translation: 描述了用具有低氧浓度的电镀液将金属电镀到工件上的方法，系统和装置。 在一个方面，一种方法包括降低电镀溶液的氧浓度。 电镀溶液包含约百万分之一百或更少的促进剂。 在降低电镀液的氧浓度后，将晶片基板与电镀液中的电镀液接触。 电镀液中电镀液的氧浓度约为百万分之一以下。 将金属与电镀液电镀在电镀槽中的晶片基板上。 在将金属电镀到晶片基板上之后，镀液的氧化强度提高。

公开(公告)号：US20120264290A1

公开(公告)日：2012-10-18

申请号：US13108894

申请日：2011-05-16

Applicant: Jonathan D. REID ,  Huanfeng ZHU

Inventor： Jonathan D. REID ,  Huanfeng ZHU

IPC: H01L21/768 ,  C25D5/50 ,  B05C13/00 ,  B05C11/00 ,  B05C9/14

CPC classification number: C25D21/12 ,  C25D3/38 ,  C25D7/123 ,  C25D17/001 ,  C25D17/008 ,  H01L21/2885 ,  H01L21/6723 ,  H01L21/76864 ,  H01L21/76882

Abstract: Methods, apparatus, and systems for depositing copper and other metals are provided. In some implementations, a wafer substrate is provided to an apparatus. The wafer substrate has a surface with field regions and a feature. A copper layer is plated onto the surface of the wafer substrate. The copper layer is annealed to redistribute copper from regions of the wafer substrate to the feature. Implementations of the disclosed methods, apparatus, and systems allow for void-free bottom-up fill of features in a wafer substrate.

公开(公告)号：US20120261254A1

公开(公告)日：2012-10-18

申请号：US13108881

申请日：2011-05-16

Applicant: Jonathan D. REID ,  Huanfeng ZHU

Inventor： Jonathan D. REID ,  Huanfeng ZHU

IPC: C25D17/00 ,  C25D19/00

Abstract: Methods, apparatus, and systems for depositing copper and other metals are provided. In some implementations, a wafer substrate is provided to an apparatus. The wafer substrate has a surface with field regions and a feature. A copper layer is plated onto the surface of the wafer substrate. The copper layer is annealed to redistribute copper from regions of the wafer substrate to the feature. Implementations of the disclosed methods, apparatus, and systems allow for void-free bottom-up fill of features in a wafer substrate.

Abstract translation: 提供了用于沉积铜和其他金属的方法，装置和系统。 在一些实施方案中，将晶片衬底提供给设备。 晶片基板具有具有场区域和特征的表面。 铜层被镀在晶片衬底的表面上。 将铜层退火以将铜从晶片衬底的区域重新分配到特征。 所公开的方法，装置和系统的实施允许晶片衬底中的特征的无空隙自底向上填充。