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    Method for making diffusions into a substrate and electrical connections thereto using silicon containing rare earth hexaboride materials
    1.
    发明授权
    Method for making diffusions into a substrate and electrical connections thereto using silicon containing rare earth hexaboride materials 失效
    使用含硅稀土六硼化物材料制造扩散到基板中并与其连接的方法

    公开(公告)号：US4481046A

    公开(公告)日：1984-11-06

    申请号：US537124

    申请日：1983-09-29

    申请人： Dennis P. Bouldin ,  Dale P. Hallock ,  Stanley Roberts ,  James G. Ryan

    发明人： Dennis P. Bouldin ,  Dale P. Hallock ,  Stanley Roberts ,  James G. Ryan

    IPC分类号： H01L21/225 ,  H01L21/28 ,  H01L21/285 ,  H01L21/321 ,  H01L21/768 ,  H01L29/43

    CPC分类号： H01L21/2254 ,  H01L21/28512 ,  H01L21/321 ,  H01L21/76886

    摘要： A method for diffusing a conductivity determining impurity in a semiconductor substrate and making electrical contact thereto by depositing a conductive layer made of a rare earth hexaboride material containing a predetermined amount of silicon in it over a surface portion of the substrate and heating the substrate for a predetermined period of time at a predetermined temperature which is sufficient to cause boron from the hexaboride material to diffuse into the adjoining portion of the substrate to modify its conductor characteristics. At the same time a good electrical ohmic contact is established between the conductive layer and the adjoining substrate portion while the conductive layer retains its conductivity even after the outdiffusion of some of its boron into the substrate during the heat treatment. A silicon dioxide layer is also formed on the exposed surface of the silicon containing hexaboride material through the oxidation of the silicon disposed close to the exposed surfaces of the hexaboride material.

    摘要翻译： 一种通过在衬底的表面部分沉积由含有预定量的硅的稀土六硼化物材料制成的导电层，将半导体衬底中的导电性确定杂质扩散并与其接触的方法，并加热衬底 预定时间段在足以使来自六硼化物材料的硼扩散到基板的相邻部分中以改变其导体特性的预定温度下。 同时在导电层和邻接的衬底部分之间建立了良好的电欧姆接触，同时即使在热处理过程中，一些硼的一部分向其扩散到衬底中之后，导电层也保持其导电性。 在含硅六硼化物材料的暴露表面上，通过氧化接近六硼化物材料暴露表面的硅也形成二氧化硅层。

    Dual work function CMOS device
    2.
    发明授权
    Dual work function CMOS device 有权
    双工功能CMOS器件

    公开(公告)号：US6028339A

    公开(公告)日：2000-02-22

    申请号：US211565

    申请日：1998-12-14

    申请人： Robert O. Frenette ,  Dale P. Hallock ,  Stephen A. Mongeon ,  Anthony C. Speranza ,  William R. P. Tonti

    发明人： Robert O. Frenette ,  Dale P. Hallock ,  Stephen A. Mongeon ,  Anthony C. Speranza ,  William R. P. Tonti

    IPC分类号： H01L21/8238 ,  H01L29/76 ,  H01L29/94 ,  H01L31/062 ,  H01L31/113 ,  H01L31/119

    CPC分类号： H01L21/823842 ,  Y10S257/90

    摘要： A dual work function CMOS device and method for producing the same is disclosed. The method includes: depositing a first layer of a doped material, either n-type or p-type, over a substrate to be doped; defining the areas that are to be oppositely doped; depositing a second layer of an oppositely doped material over the entire surface; and subjecting the entire CMOS device to a high temperature, drive-in anneal. The drive-in anneal accelerates the diffusion of the dopants into the adjacent areas, thereby doping the gate polysilicon and channels with the desired dopants. A nitride barrier layer may be utilized to prevent the second dopant from diffusing through the first layer and into the substrate beneath.

    摘要翻译： 公开了一种双功能功能CMOS器件及其制造方法。 该方法包括：在要掺杂的衬底上沉积n型或p型掺杂材料的第一层; 定义要相反掺杂的区域; 在整个表面上沉积相对掺杂的材料的第二层; 并对整个CMOS器件进行高温，驱动退火。 驱动退火加速了掺杂剂进入相邻区域的扩散，从而掺杂了所需掺杂剂的栅极多晶硅和沟道。 可以使用氮化物阻挡层来防止第二掺杂剂通过第一层扩散到下面的衬底中。

    Method for producing dual work function CMOS device
    3.
    发明授权
    Method for producing dual work function CMOS device 失效
    双工功能CMOS器件的制造方法

    公开(公告)号：US5770490A

    公开(公告)日：1998-06-23

    申请号：US705579

    申请日：1996-08-29

    申请人： Robert O. Frenette ,  Dale P. Hallock ,  Stephen A. Mongeon ,  Anthony C. Speranza ,  William R. P. Tonti

    发明人： Robert O. Frenette ,  Dale P. Hallock ,  Stephen A. Mongeon ,  Anthony C. Speranza ,  William R. P. Tonti

    IPC分类号： H01L21/28 ,  H01L21/8238

    CPC分类号： H01L21/28035 ,  H01L21/823842

    摘要： A dual work function CMOS device and method for producing the same is disclosed. The method includes: depositing a first layer of a doped material, either n-type or p-type, over a substrate to be doped; defining the areas that are to be oppositely doped; depositing a second layer of an oppositely doped material over the entire surface; and subjecting the entire CMOS device to a high temperature, drive-in anneal. The drive-in anneal accelerates the diffusion of the dopants into the adjacent areas, thereby doping the gate polysilicon and channels with the desired dopants. A nitride barrier layer may be utilized to prevent the second dopant from diffusing through the first layer and into the substrate beneath.

    摘要翻译： 公开了一种双功能功能CMOS器件及其制造方法。 该方法包括：在要掺杂的衬底上沉积n型或p型掺杂材料的第一层; 定义要相反掺杂的区域; 在整个表面上沉积相对掺杂的材料的第二层; 并对整个CMOS器件进行高温，驱动退火。 驱动退火加速了掺杂剂进入相邻区域的扩散，从而掺杂了所需掺杂剂的栅极多晶硅和沟道。 可以使用氮化物阻挡层来防止第二掺杂剂通过第一层扩散到下面的衬底中。