公开(公告)号：US06559068B2

公开(公告)日：2003-05-06

申请号：US09894089

申请日：2001-06-28

申请人： Dev Alok ,  Emil Arnold ,  Richard Egloff ,  Satyendranath Mukherjee

发明人： Dev Alok ,  Emil Arnold ,  Richard Egloff ,  Satyendranath Mukherjee

IPC分类号： H01L21469

CPC分类号： H01L21/049

摘要： A method for improving inversion layer mobility in a silicon carbide metal-oxide semiconductor field-effect transistor (MOSFET) is provided. Specifically, the present invention provides a method for applying an oxide layer to a silicon carbide substrate so that the oxide-substrate interface of the resulting SiC MOSFET is improved. The method includes forming the oxide layer in the presence of metallic impurities.

摘要翻译： 提供了一种用于提高碳化硅金属氧化物半导体场效应晶体管（MOSFET）中的反型层迁移率的方法。 具体地，本发明提供了一种将氧化物层施加到碳化硅衬底上，使得所得SiC MOSFET的氧化物 - 衬底界面得到改善的方法。 该方法包括在金属杂质存在下形成氧化物层。

公开(公告)号：US6011278A

公开(公告)日：2000-01-04

申请号：US959346

申请日：1997-10-28

申请人： Dev Alok ,  Satyendranath Mukherjee ,  Emil Arnold

发明人： Dev Alok ,  Satyendranath Mukherjee ,  Emil Arnold

IPC分类号： H01L29/16 ,  H01L21/337 ,  H01L21/338 ,  H01L29/08 ,  H01L29/24 ,  H01L29/78 ,  H01L29/808 ,  H01L29/812 ,  H01L29/861 ,  H01L31/0256 ,  H01L23/58 ,  H01L31/0312

CPC分类号： H01L29/7816 ,  H01L29/0878 ,  H01L29/1608 ,  H01L29/7835 ,  H01L29/8611 ,  H01L2924/0002

摘要： A lateral silicon carbide (SiC) semiconductor device includes a SIC substrate of a first conductivity type, a SiC epitaxial layer of the first conductivity type on the substrate and a SiC surface layer on the SiC epitaxial layer. The SiC surface layer has a SiC first region of the first conductivity type, a SiC lateral drift region of a second conductivity type opposite to that of the first conductivity type adjacent the first region and forming a p-n junction therewith, and a SiC second region of the second conductivity type spaced apart from the first region by the drift region. By providing the drift region with a variable doping level which increases in a direction from the first region to the second region, compact SiC semiconductor devices such as high-voltage diodes or MOSFETs can be formed which can operate at high voltages, high temperatures and high frequencies, thus providing a substantial advantage over known devices.

摘要翻译： 横向碳化硅（SiC）半导体器件包括第一导电类型的SIC衬底，衬底上的第一导电类型的SiC外延层和SiC外延层上的SiC表面层。 SiC表面层具有第一导电类型的SiC第一区域，与第一区域相邻的第二导电类型的第二导电类型的SiC侧向漂移区域并与其形成pn结，以及SiC第二区域 所述第二导电类型与所述第一区域间隔开所述漂移区域。 通过提供具有从第一区域到第二区域的方向增加的可变掺杂水平的漂移区域，可以形成可在高电压，高温和高温下工作的紧凑的SiC半导体器件，例如高压二极管或MOSFET 频率，因此比已知装置提供了显着的优点。

公开(公告)号：US06373076B1

公开(公告)日：2002-04-16

申请号：US09455663

申请日：1999-12-07

申请人： Dev Alok ,  Emil Arnold

发明人： Dev Alok ,  Emil Arnold

IPC分类号： H01L310256

CPC分类号： H01L29/6606 ,  H01L21/0445 ,  H01L21/045 ,  H01L21/0495 ,  H01L29/1608 ,  H01L29/872 ,  Y10S438/931

摘要： Semiconductor power devices with improved electrical characteristics are disclosed including rectifying contacts on a specially prepared semiconductor surface with little or no additional exposure to other chemical treatments, with oxide passivation and edge termination at a face of the semiconductor substrate adjacent to and surrounding the power device. The edge termination region is preferably formed by implanting electrically inactive ions, such as argon, into the substrate face at sufficient energy and dose to amorphize a portion of the substrate face and preferably self-aligned to the device. The passivated, edge-terminated devices exhibit improved characteristics relative to passivated devices with characteristics approaching those of the native semiconductor with the additional advantages of passivation protection. Methods for making and using the devices are also disclosed.

摘要翻译： 公开了具有改善的电特性的半导体功率器件，其包括在特别制备的半导体表面上的整流触点，其中少量或不附加暴露于其它化学处理，其中氧化物钝化和边缘终端位于邻近并围绕功率器件的半导体衬底的表面。 优选地，边缘终止区域通过以足够的能量和剂量将电惰性离子（例如氩）注入衬底面而形成，以使衬底面的一部分非晶化，并且优选地与器件自对准。 钝化的边缘终端器件相对于具有接近本地半导体的特性的钝化器件具有改进的特性，具有钝化保护的附加优点。 还公开了制造和使用装置的方法。

公开(公告)号：US06703276B2

公开(公告)日：2004-03-09

申请号：US10055382

申请日：2002-01-22

申请人： Dev Alok ,  Emil Arnold

发明人： Dev Alok ,  Emil Arnold

IPC分类号： H01L310256

CPC分类号： H01L29/6606 ,  H01L21/0445 ,  H01L21/045 ,  H01L21/0495 ,  H01L29/1608 ,  H01L29/872 ,  Y10S438/931

摘要： Semiconductor power devices with improved electrical characteristics are disclosed including rectifying contacts on a specially prepared semiconductor surface with little or no additional exposure to other chemical treatments, with oxide passivation and edge termination at a face of the semiconductor substrate adjacent to and surrounding the power device. The edge termination region is preferably formed by implanting electrically inactive ions, such as argon, into the substrate face at sufficient energy and dose to amorphize a portion of the substrate face and preferably self-aligned to the device. The passivated, edge-terminated devices exhibit improved characteristics relative to passivated devices with characteristics approaching those of the native semiconductor with the additional advantages of passivation protection. Methods for making and using the devices are also disclosed.

摘要翻译： 公开了具有改善的电特性的半导体功率器件，其包括在特别制备的半导体表面上的整流触点，其中少量或不需要额外暴露于其它化学处理，其中半导体衬底的与氧化物钝化相邻并且围绕功率器件的边缘终止。 优选地，边缘终止区域通过以足够的能量和剂量将电惰性离子（例如氩）注入衬底面而形成，以使衬底面的一部分非晶化，并且优选地与器件自对准。 钝化的边缘终端器件相对于具有接近本地半导体的特性的钝化器件具有改进的特性，具有钝化保护的附加优点。 还公开了制造和使用装置的方法。

公开(公告)号：US06407014B1

公开(公告)日：2002-06-18

申请号：US09464862

申请日：1999-12-16

申请人： Dev Alok

发明人： Dev Alok

IPC分类号： H01L21302

CPC分类号： H01L29/7802 ,  H01L21/02532 ,  H01L21/02667 ,  H01L21/0445 ,  H01L21/049 ,  H01L21/2022 ,  H01L29/1608 ,  H01L29/66068 ,  Y10S438/966 ,  Y10S438/969

摘要： The invention provides a method for the production of high quality thermally grown oxide on top of silicon carbide. The high quality oxide is obtained by selectively removing the carbon from the silicon carbide in the areas where oxide formation is desired or required. The method includes the steps of: (a) amorphizing the silicon carbide in at least one region of a monocrystalline silicon carbide substrate by ion implantation; (b) removing at least an effective amount of the carbon resulting from amorphizing the silicon carbide with an etchant effective to selectively remove carbon from the amorphized silicon carbide to produce an amorphous silicon-rich region; and (c) forming an oxide on the etched surface to provide a device which has an oxide region on (1) either an amorphous silicon-rich region which is (i) predominantly or entirely amorphous silicon or (ii) a mixture of predominantly amorphous silicon in combination with minor amounts of amorphous silicon carbide and /or silicon dioxide or (2) a monocrystalline silicon region; wherein (1) or (2) is present on a region of a silicon carbide substrate, or (3) a region of a silicon carbide substrate.

摘要翻译： 本发明提供了一种在碳化硅顶部生产高质量热生长氧化物的方法。 通过在需要或需要氧化物形成的区域中选择性地除去碳化硅中的碳而获得高质量的氧化物。 该方法包括以下步骤：（a）通过离子注入使单晶碳化硅衬底的至少一个区域中的碳化硅非晶化;（b）除去至少有效量的由蚀刻剂使碳化硅非晶化所产生的碳 有效地从非晶化碳化硅中选择性地除去碳以产生无定形富硅区域; 和（c）在蚀刻表面上形成氧化物以提供在（1）无定形富硅区域上具有氧化物区域的器件，所述非晶硅富集区域是（i）主要或全部非晶硅，或（ii）主要为非晶态的 硅与少量非晶碳化硅和/或二氧化硅组合，或（2）单晶硅区;其中（1）或（2）存在于碳化硅衬底的区域上，或（3） 碳化硅衬底。

公开(公告)号：US06303508B1

公开(公告)日：2001-10-16

申请号：US09464861

申请日：1999-12-16

申请人： Dev Alok

发明人： Dev Alok

IPC分类号： H01L21302

CPC分类号： H01L21/02667 ,  H01L21/02378 ,  H01L21/02532 ,  H01L21/0445 ,  H01L21/2022 ,  H01L21/8213 ,  H01L21/823807 ,  H01L21/8249 ,  H01L29/267 ,  H01L29/66068 ,  H01L29/7802

摘要： The present invention provides semiconductor devices having at least one silicon region in a silicon carbide wafer in which is fabricated a low voltage semiconductor device such as for example, MOSFET devices, BiCMOS devices, Bipolar devices, etc., and on the same chip, at least one silicon carbide region in which is fabricated a high voltage (i.e., >1000V) semiconductor device using techniques well known in the art, such as for example, LDMOSFET, UMOSFET, DMOSFET, IGBT, MESFET, and JFET devices. Such devices are derived from a method for forming a silicon region on a silicon carbide substrate which comprises the steps of: providing a monocrystalline silicon carbide substrate; amorphizing at least one region of the substrate, preferably by subjecting at least a portion of a surface of the substrate to ion implantation to convert at least a portion of the substrate surface to amorphous silicon carbide producing a region of amorphous silicon carbide on a monocrystalline silicon carbide substrate; removing at least an effective amount of carbon from said amorphized region, preferably by subjecting at least a portion of the amorphous silicon carbide region to an etchant material which selectively removes carbon to produce a region of amorphous silicon on a monocrystalline silicon carbide substrate; and subjecting the monocrystalline substrate with at least a region of amorphous silicon to high temperature thermal anneal to produce a region of monocrystalline silicon on said monocrystalline silicon carbide substrate.

摘要翻译： 本发明提供了在碳化硅晶片中具有至少一个硅区域的半导体器件，其中制造了诸如MOSFET器件，BiCMOS器件，双极器件等的低电压半导体器件，并且在同一芯片上 至少一个碳化硅区域，其中使用本领域公知的技术，例如LDMOSFET，UMOSFET，DMOSFET，IGBT，MESFET和JFET器件制造高电压（即> 1000V）半导体器件。 这种器件源于在碳化硅衬底上形成硅区域的方法，该方法包括以下步骤：提供单晶碳化硅衬底; 优选通过使衬底的表面的至少一部分进行离子注入来将基板表面的至少一部分转化为非晶碳化硅，从而在单晶硅上产生非晶碳化硅的区域，使基底的至少一个区域非晶化 碳化物基体; 从所述非晶化区域去除至少有效量的碳，优选通过使非晶碳化硅区域的至少一部分经受选择性地除去碳以在单晶碳化硅衬底上产生非晶硅区域的蚀刻剂材料; 以及使具有非晶硅的至少一个区域的所述单晶衬底经受高温热退火，以在所述单晶碳化硅衬底上产生单晶硅的区域。

公开(公告)号：US5318915A

公开(公告)日：1994-06-07

申请号：US8203

申请日：1993-01-25

申请人： Bantval J. Baliga ,  Dev Alok ,  Mohit Bhatnagar

发明人： Bantval J. Baliga ,  Dev Alok ,  Mohit Bhatnagar

IPC分类号： H01L21/04 ,  H01L21/20

CPC分类号： H01L21/046 ,  Y10S438/931

摘要： A method for forming a p-n junction in silicon carbide includes the steps of amorphizing a portion of a monocrystalline silicon carbide substrate, implanting dopant ions into the amorphous portion of the substrate and then recrystallizing the amorphous portion to thereby form a substantially monocrystalline region including the dopant ions. In particular, the amorphizing step includes the steps of masking an area on the face of the monocrystalline silicon carbide substrate and then directing electrically inactive ions to the masked area so that an amorphous region in the substrate is formed. Accordingly, the amorphous region has sidewalls extending to the face that are substantially orthogonal to the bottom edge of the amorphous region. Once the amorphized region is defined, electrically active dopant ions are implanted into the amorphous region. The dopant ions are then diffused into the amorphous region and become uniformly distributed. Next, the doped amorphized region is recrystallized to obtain a substantially monocrystalline doped region. If the region surrounding the recrystallized region are of opposite conductivity type, a vertically walled p-n junction is formed.

摘要翻译： 用于在碳化硅中形成pn结的方法包括以下步骤：将单晶碳化硅衬底的一部分非晶化，将掺杂剂离子注入到衬底的非晶部分中，然后使非晶部分重结晶，从而形成包括掺杂剂的基本单晶区域 离子。 特别地，非晶化步骤包括以下步骤：掩蔽单晶碳化硅衬底的表面上的区域，然后将非活性离子引导到掩蔽区域，从而形成衬底中的非晶区域。 因此，非晶区域具有延伸到基本上正交于非晶区域的底部边缘的面的侧壁。 一旦定义了非晶化区域，则将电活性掺杂剂离子注入非晶区域。 然后掺杂剂离子扩散到非晶区域并变得均匀分布。 接下来，掺杂的非晶化区域被重结晶以获得基本单晶掺杂区域。 如果再结晶区域周围的区域具有相反的导电型，则形成垂直壁的p-n结。

公开(公告)号：US5449925A

公开(公告)日：1995-09-12

申请号：US238228

申请日：1994-05-04

申请人： Bantval J. Baliga ,  Dev Alok

发明人： Bantval J. Baliga ,  Dev Alok

IPC分类号： H01L21/04 ,  H01L21/265 ,  H01L21/329 ,  H01L29/06 ,  H01L29/24 ,  H01L29/47 ,  H01L29/861 ,  H01L29/872 ,  H01L29/417 ,  H01L29/43

CPC分类号： H01L29/1608 ,  H01L29/6606 ,  H01L29/861 ,  H01L29/872 ,  Y10S438/931

摘要： Voltage breakdown resistant monocrystalline silicon carbide semiconductor devices are obtained by forming an amorphous silicon carbide termination region in a monocrystalline silicon carbide substrate, at a face thereof, adjacent and surrounding a silicon carbide device. The amorphous termination region is preferably formed by implanting electrically inactive ions, such as argon, into the substrate face at sufficient energy and dose to amorphize the substrate face. The device contact or contacts act as an implantation mask to provide a self-aligned termination region for the device. The terminated devices may exhibit voltage breakdown resistance which approaches the ideal value for silicon carbide.

摘要翻译： 耐压击穿的单晶碳化硅半导体器件通过在单晶碳化硅衬底的表面上形成与碳化硅器件相邻并围绕的非晶碳化硅终止区来获得。 优选通过以足够的能量和剂量将电惰性离子（例如氩）注入到衬底面中来形成无定形终止区域以使衬底面非晶化。 器件触点或触点用作注入掩模，以为器件提供自对准的端接区域。 端接器件可能具有接近碳化硅理想值的耐电压击穿电阻。

公开(公告)号：US5436174A

公开(公告)日：1995-07-25

申请号：US008719

申请日：1993-01-25

申请人： Bantval J. Baliga ,  Dev Alok

发明人： Bantval J. Baliga ,  Dev Alok

IPC分类号： H01L21/04 ,  H01L21/76 ,  H01L21/266

CPC分类号： H01L21/7602 ,  H01L21/0475 ,  Y10S148/148 ,  Y10S438/924 ,  Y10S438/931

摘要： A trench is formed in a monocrystalline silicon carbide substrate by amorphizing a portion of the monocrystalline silicon carbide substrate to define an amorphous silicon carbide region therein. The amorphous silicon carbide region is then removed, to produce a trench in the monocrystalline silicon carbide substrate corresponding to the removed amorphous silicon carbide region. The substrate may be amorphized by implanting ions into a masked substrate so that the implanted ions convert the unmasked portions of the substrate into amorphous silicon carbide. The amorphous silicon carbide may be etched using at least one etchant which etches amorphous silicon carbide relatively quickly and etches monocrystalline silicon carbide relatively slowly, such as hydrofluoric acid and nitric acid. The amorphizing and removing steps may be repeatedly performed to form deep trenches.

摘要翻译： 通过将单晶碳化硅衬底的一部分非晶化以在其中限定非晶碳化硅区域，在单晶碳化硅衬底中形成沟槽。 然后去除非晶碳化硅区域，以在对应于去除的非晶碳化硅区域的单晶碳化硅衬底中产生沟槽。 衬底可以通过将离子注入到掩模衬底中而非晶化，使得注入的离子将衬底的未掩模部分转化为非晶碳化硅。 可以使用至少一种相当快地蚀刻非晶碳化硅的蚀刻剂来蚀刻非晶碳化硅，并相对缓慢地蚀刻单晶碳化硅，例如氢氟酸和硝酸。 可以重复进行非晶化和去除步骤以形成深沟槽。

公开(公告)号：US06620697B1

公开(公告)日：2003-09-16

申请号：US09961982

申请日：2001-09-24

申请人： Dev Alok ,  Rik Jos

发明人： Dev Alok ,  Rik Jos

IPC分类号： H01L21336

CPC分类号： H01L29/1608 ,  H01L29/66068 ,  H01L29/7835 ,  Y10S438/931

摘要： A silicon carbide lateral metal-oxide-semiconductor field-effect transistor (SiC LMOSFET) having a self-aligned drift region and method for forming the same is provided. Specifically, the SiC LMOSFET includes a source region, a drift region and a drain region. The source and drain regions are implanted using non self-aligned technology (i.e., prior to formation of the gate electrode and the gate oxide layer), while the drift region is implanted using self-aligned technology (i.e., after formation of the gate electrode and the gate oxide layer). By self-aligning the drift region to the gate electrode, the overlap between the two is minimized, which reduces the capacitance of the device. When capacitance is reduced, performance is improved.

摘要翻译： 提供了具有自对准漂移区域的碳化硅横向金属氧化物半导体场效应晶体管（SiC LMOSFET）及其形成方法。 具体地，SiC LMOSFET包括源极区，漂移区和漏极区。 使用非自对准技术（即，在形成栅极和栅极氧化物层之前）注入源极和漏极区域，而使用自对准技术（即，在形成栅极电极之后） 和栅极氧化物层）。 通过将漂移区域自对准到栅电极，两者之间的重叠被最小化，这降低了器件的电容。 当电容降低时，性能得到改善。