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公开(公告)号：US5318915A
公开(公告)日：1994-06-07
申请号：US8203
申请日：1993-01-25
申请人： Bantval J. Baliga , Dev Alok , Mohit Bhatnagar
发明人： Bantval J. Baliga , Dev Alok , Mohit Bhatnagar
CPC分类号： H01L21/046 , Y10S438/931
摘要： A method for forming a p-n junction in silicon carbide includes the steps of amorphizing a portion of a monocrystalline silicon carbide substrate, implanting dopant ions into the amorphous portion of the substrate and then recrystallizing the amorphous portion to thereby form a substantially monocrystalline region including the dopant ions. In particular, the amorphizing step includes the steps of masking an area on the face of the monocrystalline silicon carbide substrate and then directing electrically inactive ions to the masked area so that an amorphous region in the substrate is formed. Accordingly, the amorphous region has sidewalls extending to the face that are substantially orthogonal to the bottom edge of the amorphous region. Once the amorphized region is defined, electrically active dopant ions are implanted into the amorphous region. The dopant ions are then diffused into the amorphous region and become uniformly distributed. Next, the doped amorphized region is recrystallized to obtain a substantially monocrystalline doped region. If the region surrounding the recrystallized region are of opposite conductivity type, a vertically walled p-n junction is formed.
摘要翻译： 用于在碳化硅中形成pn结的方法包括以下步骤：将单晶碳化硅衬底的一部分非晶化，将掺杂剂离子注入到衬底的非晶部分中，然后使非晶部分重结晶，从而形成包括掺杂剂的基本单晶区域 离子。 特别地，非晶化步骤包括以下步骤：掩蔽单晶碳化硅衬底的表面上的区域，然后将非活性离子引导到掩蔽区域，从而形成衬底中的非晶区域。 因此，非晶区域具有延伸到基本上正交于非晶区域的底部边缘的面的侧壁。 一旦定义了非晶化区域，则将电活性掺杂剂离子注入非晶区域。 然后掺杂剂离子扩散到非晶区域并变得均匀分布。 接下来，掺杂的非晶化区域被重结晶以获得基本单晶掺杂区域。 如果再结晶区域周围的区域具有相反的导电型，则形成垂直壁的p-n结。
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公开(公告)号：US5338945A
公开(公告)日：1994-08-16
申请号：US196717
申请日：1994-02-15
申请人： Bantval J. Baliga , Mohit Bhatnagar
发明人： Bantval J. Baliga , Mohit Bhatnagar
IPC分类号： H01L21/04 , H01L29/24 , H01L29/78 , H01L29/10 , H01L29/161 , H01L29/167
CPC分类号： H01L29/1608 , H01L21/046 , H01L29/66068 , H01L29/7802 , Y10S148/148 , Y10S438/931
摘要： A silicon carbide field effect transistor of the present invention includes a base and source region each formed by a series of amorphizing, implanting and recrystallizing steps. Moreover, the drain, base and source regions extend to a face of a monocrystalline silicon carbide substrate and the source and base regions comprise substantially monocrystalline silicon carbide formed from recrystallized amorphous silicon carbide, The source and base regions also have vertical sidewalls defining the p-n junction between the source/base and base/drain regions, respectively. The vertical orientation of the sidewalls arises from the respective implantation of electrically inactive ions into the substrate during the amorphizing steps for forming the base region in the drain and for forming the source region in the base region. The electrically inactive ions are selected from the group consisting of silicon, hydrogen, neon, helium, carbon and argon. A gate and gate insulating region are also provided on the face of the substrate above the base region. By applying an appropriate turn-on base signal to the gate, a channel is created in the base region. The channel region electrically connects the source to the drain. The source and base are also electrically connected by a source contact on the face, opposite the portion of the base region wherein the channel is formed.
摘要翻译： 本发明的碳化硅场效应晶体管包括通过一系列非晶化，注入和重结晶步骤形成的基极和源极区域。 此外，漏极，基极和源极区域延伸到单晶碳化硅衬底的表面，并且源极和基极区域包括由重结晶的非晶碳化硅形成的基本单晶碳化硅。源极和基极区域还具有限定pn结的垂直侧壁 分别在源极/基极和基极/漏极区之间。 侧壁的垂直取向是在非晶化步骤期间相应地将非活性离子注入到衬底中，用于在漏极中形成基极区域并形成基极区域中的源极区域。 电惰性离子选自硅，氢，氖，氦，碳和氩。 栅极和栅极绝缘区域也设置在基极区域上方的基板的表面上。 通过对栅极施加适当的开启基极信号，在基极区域中产生通道。 沟道区域将源极与漏极电连接。 源极和基极也通过在与形成沟道的基极区域的部分相对的面上的源极接触电连接。
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公开(公告)号：US5322802A
公开(公告)日：1994-06-21
申请号：US8747
申请日：1993-01-25
申请人： Bantval J. Baliga , Mohit Bhatnagar
发明人： Bantval J. Baliga , Mohit Bhatnagar
IPC分类号： H01L21/04 , H01L29/24 , H01L29/78 , H01L21/265
CPC分类号： H01L29/1608 , H01L21/046 , H01L29/66068 , H01L29/7802 , Y10S148/148 , Y10S438/931
摘要： A silicon carbide field effect transfer of the present invention includes a base and source region each formed by a series of amorphizing, implanting and recrystallizing steps. Moreover, the drain, base and source regions extend to a face of a monocrystalline silicon carbide substrate and the source and base regions comprise substantially monocrystalline silicon carbide formed from recrystallized amorphous silicon carbide. The source and base regions also have vertical sidewalls defining the p-n junction between the source/base and base/drain regions, respectively. The vertical orientation of the sidewalls arises from the respective implantation of electrically inactive ions into the substrate during the amorphizing steps for forming the base region in the drain and for forming the source region in the base region. The electrically inactive ions are selected from the group consisting of silicon, hydrogen, neon, helium, carbon and argon. A gate and gate insulating region are also provided on the face of the substrate above the base region. By applying an appropriate turn-on bias signal to the gate, a channel is created in the base region. The channel region electrically connects the source to the drain. The source and base are also electrically connected by a source contact on the face, opposite the portion of the base region wherein the channel is formed.
摘要翻译： 本发明的碳化硅场效应转移包括通过一系列非晶化，注入和重结晶步骤形成的基极和源极区域。 此外，漏极，基极和源极区域延伸到单晶碳化硅衬底的表面，并且源极和基极区域包括由重结晶的非晶碳化硅形成的基本上单晶碳化硅。 源极和基极区域还分别具有限定源极/基极和基极/漏极区域之间的p-n结的垂直侧壁。 侧壁的垂直取向是在非晶化步骤期间相应地将非活性离子注入到衬底中，用于在漏极中形成基极区域并形成基极区域中的源极区域。 电惰性离子选自硅，氢，氖，氦，碳和氩。 栅极和栅极绝缘区域也设置在基极区域上方的基板的表面上。 通过向栅极施加适当的接通偏置信号，在基极区域中产生通道。 沟道区域将源极与漏极电连接。 源极和基极也通过在与形成沟道的基极区域的部分相对的面上的源极接触电连接。
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公开(公告)号：US06887246B2
公开(公告)日：2005-05-03
申请号：US10152017
申请日：2002-05-22
申请人： Mohit Bhatnagar , Eric Major
发明人： Mohit Bhatnagar , Eric Major
CPC分类号： A61B17/8819 , A61B17/00234 , A61B17/3472 , A61B17/8816 , A61B17/8822 , A61B17/8827 , A61B17/8833 , A61F2/441 , A61F2/4601 , A61F2/4611 , A61F2002/4623 , A61F2002/4627 , A61F2002/4635 , A61F2002/4677 , A61F2310/00353
摘要： A Novel surgical apparatus and method of use in osteoplasty and other methods of injecting materials into a subject for medical purposes. The present invention particularly relates to the surgical treatment of traumatic, pathogenic, or osteoporotic bone conditions of the human and other animal body systems and more particularly, to a novel apparatus and method for injection of a material into a lesion of a vertebral body or other bony structure.
摘要翻译： 一种用于骨科成形术的新型外科手术装置和方法以及用于医疗目的将材料注射到受试者中的其它方法。 本发明特别涉及人和其他动物体系的创伤性，致病性或骨质疏松性骨条件的手术治疗，更具体地，涉及用于将材料注射到椎体或其它部位的损伤中的新型装置和方法 骨结构。
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公开(公告)号：US6146926A
公开(公告)日：2000-11-14
申请号：US136492
申请日：1998-08-19
IPC分类号： H01L21/04 , H01L21/336 , H01L29/10 , H01L29/12 , H01L29/20 , H01L29/24 , H01L29/78 , H01L21/332
CPC分类号： H01L29/7828 , H01L29/1095 , H01L29/66068 , H01L29/66666 , H01L29/66712 , H01L29/7802 , H01L29/1608 , H01L29/20 , H01L29/2003
摘要： A lateral gate, vertical drift region transistor including a drain positioned on one surface of a substrate and a doped structure having a buried region therein positioned on the other surface of the substrate. The buried region defining a drift region in the doped structure extending vertically from the substrate and further defining a doped region in communication with the drift region and adjacent the surface of the doped structure. A source positioned on the doped structure in communication with the doped region and an implant region positioned in the doped region adjacent the surface and in communication with the source and buried region. An insulating layer positioned on the doped structure with a metal gate positioned on the insulating layer so as to define an inversion region in the implant region extending laterally adjacent the control terminal and communicating with the drift region and the source.
摘要翻译： 横向栅极，垂直漂移区晶体管，其包括位于衬底的一个表面上的漏极和其中位于衬底的另一表面上的埋入区的掺杂结构。 所述掩埋区域限定在所述掺杂结构中的漂移区域，所述漂移区域从所述衬底垂直延伸，并进一步限定与所述漂移区域相邻并且与所述掺杂结构的表面相邻的掺杂区域。 位于与掺杂区域连通的掺杂结构上的源极和位于邻近表面并与源极和掩埋区域连通的掺杂区域中的注入区域。 绝缘层，其位于所述掺杂结构上，金属栅极位于所述绝缘层上，以便在所述注入区域中限定反向区域，所述反转区域横向延伸延伸到所述控制端子并且与所述漂移区域和所述源极连通。
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公开(公告)号：US5917203A
公开(公告)日：1999-06-29
申请号：US829072
申请日：1997-03-31
IPC分类号： H01L21/04 , H01L21/336 , H01L29/10 , H01L29/12 , H01L29/20 , H01L29/24 , H01L29/78 , H01L29/76
CPC分类号： H01L29/7828 , H01L29/1095 , H01L29/66068 , H01L29/66666 , H01L29/66712 , H01L29/7802 , H01L29/1608 , H01L29/20 , H01L29/2003
摘要： A lateral gate, vertical drift region transistor including a drain positioned on one surface of a substrate and a doped structure having a buried region therein positioned on the other surface of the substrate. The buried region defining a drift region in the doped structure extending vertically from the substrate and further defining a doped region in communication with the drift region and adjacent the surface of the doped structure. A source positioned on the doped structure in communication with the doped region and an implant region positioned in the doped region adjacent the surface and in communication with the source and buried region. An insulating layer positioned on the doped structure with a metal gate positioned on the insulating layer so as to define an inversion region in the implant region extending laterally adjacent the control terminal and communicating with the drift region and the source.
摘要翻译： 横向栅极，垂直漂移区晶体管，其包括位于衬底的一个表面上的漏极和其中位于衬底的另一表面上的埋入区的掺杂结构。 所述掩埋区域限定在所述掺杂结构中的漂移区域，所述漂移区域从所述衬底垂直延伸，并进一步限定与所述漂移区域相邻并且与所述掺杂结构的表面相邻的掺杂区域。 位于与掺杂区域连通的掺杂结构上的源极和位于邻近表面并与源极和掩埋区域连通的掺杂区域中的注入区域。 绝缘层，其位于所述掺杂结构上，金属栅极位于所述绝缘层上，以便在所述注入区域中限定反向区域，所述反转区域横向延伸延伸到所述控制端子并且与所述漂移区域和所述源极连通。
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公开(公告)号：US20060247644A1
公开(公告)日：2006-11-02
申请号：US11324765
申请日：2006-01-03
申请人： Mohit Bhatnagar , Jack Yeh , James Sack , Richard Woods
发明人： Mohit Bhatnagar , Jack Yeh , James Sack , Richard Woods
CPC分类号： A61B17/0642 , A61B17/0682 , A61B17/10 , A61B2017/0409 , A61B2017/0419 , A61F2/4611 , A61F2002/30131 , A61F2002/30841 , A61F2002/4435 , A61F2002/4627 , A61F2230/0013
摘要： A repair system including a closure prosthesis and deployment device, and associated methods for repairing any imperfection including a flaw, hole, tear, bulge, or, in some cases, a deliberate cut or incision in any tissue including an intervertebral disc. The prosthesis has first and second side portions with a connecting central portion, and is designed to span an imperfection with opposite ends positioned on opposite sides of the imperfection. The prosthesis may include anchoring features including barbs and/or members that extend transversely. The deployment device can include a canula for positioning the prosthesis near the imperfection, and, in some cases, a mechanism that may cause the two sides of the prosthesis to be deployed in a specific order.
摘要翻译： 包括闭合假体和展开装置的修复系统以及用于修复任何缺陷的相关方法，所述缺陷包括缺陷，孔，撕裂，凸起，或在某些情况下，在包括椎间盘的任何组织中的有意切割或切口。 假体具有连接中心部分的第一和第二侧部，并且被设计成跨越位于不完美的相对侧上的相对端的缺陷。 假体可以包括锚固特征，包括横向延伸的倒钩和/或构件。 展开装置可以包括用于在假体附近定位假体的套管，并且在一些情况下可以包括可以使假体的两侧以特定顺序部署的机构。
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公开(公告)号：US20050080425A1
公开(公告)日：2005-04-14
申请号：US10861865
申请日：2004-06-07
申请人： Mohit Bhatnagar , Eric Major , Richard Woods , Scott Jones , Robert Cripe , Sanjog Mathur
发明人： Mohit Bhatnagar , Eric Major , Richard Woods , Scott Jones , Robert Cripe , Sanjog Mathur
CPC分类号： A61B17/8858 , A61B17/00234 , A61B17/02 , A61B17/0206 , A61B17/0218 , A61B17/025 , A61B2017/0256
摘要： A novel surgical apparatus for use in orthopedic surgery procedures and a method for use is provided. The present invention includes a protective sheath which prevents fouling of the moving parts of the device by unwanted contact with surround tissue and bone. The device relates primarily to the treatment of traumatic, pathogenic, or osteoporotic bone conditions of human and other animal body systems and, more particularly, to a novel apparatus and method for manipulating the vertebral body through a less invasive, percutaneous, surgical approach.
摘要翻译： 提供了一种用于整形外科手术的新型手术装置和使用方法。 本发明包括一种保护性护套，其通过与周围组织和骨骼的不期望的接触来防止装置的运动部件的结垢。 该装置主要涉及人和其他动物体系的外伤，致病或骨质疏松的骨条件的治疗，更具体地涉及通过较少侵入性的经皮手术方法来操纵椎体的新型装置和方法。
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公开(公告)号：US6100549A
公开(公告)日：2000-08-08
申请号：US133041
申请日：1998-08-12
IPC分类号： H01L21/337 , H01L29/20 , H01L29/80 , H01L31/109
CPC分类号： H01L29/66924 , H01L29/802 , H01L29/2003
摘要： A high breakdown voltage HFET includes a reduced surface field (RESURF) layer of p-type conductivity GaN positioned on a substrate with a channel layer of n-type conductivity GaN positioned thereon. A barrier layer of n-type conductivity Al.sub.x Ga.sub.1-x N is positioned on the channel layer to form a lateral channel adjacent to and parallel with the interface. A gate electrode is positioned on the barrier layer overlying the lateral channel and a drain electrode is positioned on the channel layer in contact with the lateral channel and spaced to one side of the gate electrode a distance which determines the breakdown voltage. A source electrode is positioned on the channel layer to the opposite side of the gate electrode, in contact with the lateral channel and also in contact with the RESURF layer.
摘要翻译： 高击穿电压HFET包括位于衬底上的p型导电GaN的还原表面场（RESURF）层，其上定位有n型电导率GaN的沟道层。 n型导电性Al x Ga 1-x N的阻挡层位于沟道层上，以形成与界面相邻并平行的横向沟道。 栅极电极位于覆盖在横向沟道上的势垒层上，漏电极位于沟道层上，与沟道层相接触，并与栅电极的一侧隔开一定距离，确定击穿电压。 源极电极位于通道层上，与栅电极的相对侧，与侧向通道接触并且还与RESURF层接触。
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公开(公告)号：US5627385A
公开(公告)日：1997-05-06
申请号：US520123
申请日：1995-08-28
CPC分类号： H01L29/405 , H01L29/1087 , H01L29/1608 , H01L29/7835 , H01L29/7838
摘要： A lateral silicon carbide transistor (10) utilizes a modulated channel region (18) to form an accumulation region that facilitates a low on-resistance. A doped region of the channel layer forms a channel insert (14) that also lowers the on-resistance of the transistor (10). Field plates (23,24) are utilized to facilitate providing a high breakdown voltage. A high resistance layer (29)between the field plates (23,24) also assists in increasing the breakdown voltage and decreasing on-resistance of the transistor (10).
摘要翻译： 横向碳化硅晶体管（10）利用调制的沟道区（18）形成促进低导通电阻的积聚区。 沟道层的掺杂区域形成还降低晶体管（10）的导通电阻的沟道插入件（14）。 场板（23,24）用于提供高击穿电压。 场板（23,24）之间的高电阻层（29）也有助于提高击穿电压并降低晶体管（10）的导通电阻。
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