摘要:
New photoresist compositions are provided that are useful for immersion lithography. Preferred photoresist compositions of the invention comprise one or more block copolymers. Particularly preferred photoresists of the invention can exhibit reduced leaching of resist materials into an immersion fluid contacting the resist layer dining immersion lithography processing.
摘要:
New photoresist compositions are provided that are useful for immersion lithography. Preferred photoresist compositions of the invention comprise one or more block copolymers. Particularly preferred photoresists of the invention can exhibit reduced leaching of resist materials into an immersion fluid contacting the resist layer dining immersion lithography processing.
摘要:
Disclosed are spirocyclic olefin polymers, methods of preparing spirocyclic olefin polymers, photresist compositions including spirocyclic olefin resin binders and methods of forming relief images using such photoresist compositions.
摘要:
Disclosed are spirocyclic olefin ploymers, methods of preparing spirocyclic olefin polymers, photoresist compositions including spirocyclic olefin resin binders and methods of forming relief images using such photoresist compositions.
摘要:
Disclosed are polymers including as polymerized units one or more spirocyclic olefin monomer of the formulae I or Ia wherein A=CH2; G=C(Z′), O, and NR2; R2=H, (C1-C8)alkyl or substituted (C1-C8)alkyl; E and W are independently selected from C(Z′), O and a chemical bond; Z′=O; n=1; m=1; m′=0; 1=0 to 5; and p=0 to 5; provided that when both E and W are C(Z′), G is NR2; wherein T and L are taken together to form a double bond. These polymers are useful in photoresist compositions. Methods of making and using these polymers are also disclosed.
摘要翻译:公开了包括作为聚合单元的一种或多种式I或Iawherein A = CH 2的螺环烯烃单体的聚合物; G = C(Z'),O和NR2; R2 = H,(C1-C8)烷基或取代的(C1-C8)烷基; E和W独立地选自C(Z'),O和化学键; Z'= O; n = 1; m = 1; m'= 0; 1 = 0〜5; 和p = 0至5; 条件是当E和W都为C(Z')时,G为NR2; 其中T和L一起形成双键。 这些聚合物可用于光致抗蚀剂组合物。 还公开了制备和使用这些聚合物的方法。
摘要:
The present invention provides novel polymers and photoresist compositions that comprise the polymers as a resin binder component. The photoresist compositions of the invention can provide highly resolved relief images upon exposure to extremely short wavelengths, including well-resolved 0.25 micron features imaged at 193 nm. Polymers of the invention include those that comprise a photogenerated acid-labile unit that includes a cyano moiety, as well as polymers that contain cyano and itaconic anhydride moieties in combination.
摘要:
Underlying coating compositions are provided for use with an overcoated photoresist composition. In one aspect, the coating composition can be crosslinked and comprise one or more components that contain one or more acid-labile groups and/or one or more base-reactive groups that are reactive following crosslinking. In another aspect, underlying coating composition are provided that can be treated to provide a modulated water contact angle. Preferred coating compositions can enhance lithographic performance of an associated photoresist composition.
摘要:
A composition for the formation of an electric field programmable film, the composition comprising a matrix precursor composition or a dielectric matrix material, wherein the dielectric matrix material comprises an organic polymer and/or a inorganic oxide; and an electron donor and an electron acceptor of a type and in an amount effective to provide electric field programming. The films are of utility in data storage devices.
摘要:
The present invention provides novel polymers and chemically-amplified positive-acting photoresist compositions that contain such polymers as a resin binder component. Preferred polymers of the invention include one or more structural groups that are capable of reducing the temperature required for effective deprotection of acid-labile moieties of the polymer.
摘要:
The invention is for a process of removing anions from an organic solution, especially one having base labile components. The process comprises modifying an anion exchange resin by treatment with a solution of a source of anions less basic than the hydroxyl anion and contacting said modified ion exchange resin with an organic solution containing anions. The process is especially useful for treating photoresist compositions.