Leveler compounds
    1.
    发明申请

    公开(公告)号:US20090139873A1

    公开(公告)日:2009-06-04

    申请号:US12322090

    申请日:2009-01-29

    IPC分类号: C25D3/38 C08L63/10

    摘要: Plating baths containing a mixture of leveling agents, where the mixture includes a first level agent having a first diffusion coefficient and a second leveling agent having a second diffusion coefficient, are provided. Such plating baths deposit a metal layer, particularly a copper layer, that is substantially planar across a range of electrolyte concentrations. Methods of depositing metal layers using such plating baths are also disclosed. These baths and methods are useful for providing a planar layer of copper on a substrate having small apertures, such as an electronic device.

    Leveler compounds
    2.
    发明授权
    Leveler compounds 有权
    矫平剂化合物

    公开(公告)号:US07128822B2

    公开(公告)日:2006-10-31

    申请号:US10453423

    申请日:2003-06-04

    IPC分类号: C25D3/38 C23C16/00

    CPC分类号: C25D3/38

    摘要: Compounds that function to provide level or uniform metal deposits are provided. These compounds are particularly useful in providing level copper deposits. Copper plating baths and methods of copper plating using these compounds are also provided. These baths and methods are useful for providing a planarized layer of copper on a substrate having small apertures. The compositions and methods provide complete fill of small apertures with reduced void formation.

    摘要翻译: 提供了提供高级或均匀金属沉积物的功能的化合物。 这些化合物特别适用于提供含铜沉积物。 还提供了镀铜浴和使用这些化合物的镀铜方法。 这些浴和方法可用于在具有小孔的基底上提供平坦化的铜层。 组合物和方法提供了小孔隙的完全填充,减少了空隙形成。

    Leveler compounds
    3.
    发明授权
    Leveler compounds 有权
    矫平剂化合物

    公开(公告)号:US07662981B2

    公开(公告)日:2010-02-16

    申请号:US12322090

    申请日:2009-01-29

    IPC分类号: C07D303/12

    摘要: Plating baths containing a mixture of leveling agents, where the mixture includes a first level agent having a first diffusion coefficient and a second leveling agent having a second diffusion coefficient, are provided. Such plating baths deposit a metal layer, particularly a copper layer, that is substantially planar across a range of electrolyte concentrations. Methods of depositing metal layers using such plating baths are also disclosed. These baths and methods are useful for providing a planar layer of copper on a substrate having small apertures, such as an electronic device.

    摘要翻译: 提供含有流平剂混合物的电镀浴,其中混合物包括具有第一扩散系数的第一级试剂和具有第二扩散系数的第二流平剂。 这种电镀浴在一定范围的电解质浓度下沉积基本平坦的金属层,特别是铜层。 还公开了使用这种电镀浴沉积金属层的方法。 这些浴和方法对于在具有小孔径的基板(例如电子设备)上提供铜的平面层是有用的。

    Leveler compounds
    4.
    发明授权
    Leveler compounds 有权
    矫平剂化合物

    公开(公告)号:US07510639B2

    公开(公告)日:2009-03-31

    申请号:US11182311

    申请日:2005-07-16

    IPC分类号: C25D3/58 C25D3/38 C23C18/40

    摘要: Plating baths containing a mixture of leveling agents, where the mixture includes a first level agent having a first diffusion coefficient and a second leveling agent having a second diffusion coefficient, are provided. Such plating baths deposit a metal layer, particularly a copper layer, that is substantially planar across a range of electrolyte concentrations. Methods of depositing metal layers using such plating baths are also disclosed. These baths and methods are useful for providing a planar layer of copper on a substrate having small apertures, such as an electronic device.

    摘要翻译: 提供含有流平剂混合物的电镀浴,其中混合物包括具有第一扩散系数的第一级试剂和具有第二扩散系数的第二流平剂。 这种电镀浴在一定范围的电解质浓度下沉积基本平坦的金属层,特别是铜层。 还公开了使用这种电镀浴沉积金属层的方法。 这些浴和方法对于在具有小孔径的基板(例如电子设备)上提供铜的平面层是有用的。

    Leveler compounds
    8.
    发明授权
    Leveler compounds 有权
    矫平剂化合物

    公开(公告)号:US08506788B2

    公开(公告)日:2013-08-13

    申请号:US13609267

    申请日:2012-09-11

    IPC分类号: C25D3/38

    摘要: Leveling agents for metal plating baths are provided. Plating baths containing such leveling agents provide metal deposits having substantially level surfaces. Such leveling agents may be selected to selectively incorporate desired levels of impurities into the metal deposit.

    摘要翻译: 提供金属电镀浴的流平剂。 含有这种流平剂的镀浴提供具有基本水平表面的金属沉积物。 可以选择这种流平剂以选择性地将期望水平的杂质掺入到金属沉积物中。