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    Method for cleaning an EUV lithography device, method for measuring the residual gas atmosphere and the contamination and EUV lithography device
    2.
    发明授权
    Method for cleaning an EUV lithography device, method for measuring the residual gas atmosphere and the contamination and EUV lithography device 有权
    用于清洁EUV光刻设备的方法，用于测量残余气体气氛的方法以及污染物和EUV光刻设备

    公开(公告)号：US07911598B2

    公开(公告)日：2011-03-22

    申请号：US12555620

    申请日：2009-09-08

    申请人： Dieter Kraus ,  Dirk Heinrich Ehm ,  Thomas Stein ,  Harald Woelfle ,  Stefan-Wolfgang Schmidt

    发明人： Dieter Kraus ,  Dirk Heinrich Ehm ,  Thomas Stein ,  Harald Woelfle ,  Stefan-Wolfgang Schmidt

    IPC分类号： G01N21/73

    CPC分类号： G01N21/67 ,  G01N21/94 ,  G03F7/7085 ,  G03F7/70916 ,  G03F7/70925

    摘要： Components (30) in the interior of an EUV lithography device for extreme ultraviolet and soft X-ray wavelength range are cleaned by igniting a plasma, adjacent to the component (30) to be cleaned, using electrodes (29), wherein the electrodes (29) are adapted to the form of the component (30) to be cleaned. The residual gas atmosphere is measured spectroscopically on the basis of the plasma. An emission spectrum is preferably recorded in order to monitor the degree of cleaning. An optical fiber cable (31) with a coupling-in optical unit (32) is advantageously used for this purpose. Moreover, in order to monitor the contamination in the gas phase within the vacuum chambers during the operation of an EUV lithography device, it is proposed to provide modules configured to initiate a gas discharge and to detect radiation emitted on account of the gas discharge. The contamination in the gas phase can be deduced from the analysis of the measured spectrum.

    摘要翻译： 用于极紫外和软X射线波长范围的EUV光刻设备内部的部件（30）通过使用电极（29）点燃邻近被清洁部件（30）的等离子体来清洁，其中电极 29）适于被清洁的部件（30）的形式。 在等离子体的基础上光谱测量残留气体气氛。 优选记录发射光谱以监测清洁程度。 具有耦合入光学单元（32）的光纤电缆（31）有利地用于此目的。 此外，为了在EUV光刻设备的操作期间监测真空室内的气相中的污染，建议提供被配置为启动气体放电并且检测由于气体放电而发射的辐射的模块。 气相中的污染可以从测量光谱的分析推导出来。

    Detection of contaminating substances in an EUV lithography apparatus
    3.
    发明授权
    Detection of contaminating substances in an EUV lithography apparatus 有权
    在EUV光刻设备中检测污染物质

    公开(公告)号：US08953145B2

    公开(公告)日：2015-02-10

    申请号：US13035056

    申请日：2011-02-25

    申请人： Dieter Kraus ,  Dirk Heinrich Ehm ,  Stefan-Wolfgang Schmidt

    发明人： Dieter Kraus ,  Dirk Heinrich Ehm ,  Stefan-Wolfgang Schmidt

    IPC分类号： G03B27/42 ,  G03F7/20

    CPC分类号： G03F7/70916 ,  G03F7/7085 ,  G03F7/70983

    摘要： An EUV (extreme ultraviolet) lithography apparatus (1) including: a housing (1a) enclosing an interior (15), at least one reflective optical element (5, 6, 8, 9, 10, 14.1 to 14.6) arranged in the interior (15), a vacuum generating unit (1b) generating a residual gas atmosphere in the interior (15), and a residual gas analyzer (18a, 18b) detecting at least one contaminating substance (17a) in the residual gas atmosphere. The residual gas analyzer (18a) has a storage device (21) having an ion trap for storing the contaminating substance (17a). Additionally, a method for detecting at least one contaminating substance by residual gas analysis of a residual gas atmosphere of an EUV lithography apparatus (1) having a housing (1a) having an interior (15), in which at least one reflective optical element (5, 6, 8, 9, 10, 14.1 to 14.6), is arranged, wherein the contaminating substance (17a) is stored in a storage device (21) in order to carry out the residual gas analysis.

    摘要翻译： 一种EUV（极紫外）光刻设备（1），包括：包围内部的壳体（1a），布置在内部的至少一个反射光学元件（5,6,8,9,10,11.1至14.6） （15），在内部（15）中产生残留气体气氛的真空发生单元（1b）和在残留气体气氛中检测至少一种污染物质（17a）的残留气体分析器（18a，18b）。 残留气体分析器（18a）具有具有用于存储污染物质（17a）的离子阱的存储装置（21）。 另外，通过对具有内部（15）的壳体（1a）的EUV光刻设备（1）的残留气体气体的残留气体分析来检测至少一种污染物质的方法，其中至少一个反射光学元件 5，6，8，9，10，14.1至14.6），其中污染物质（17a）储存在存储装置（21）中以便进行残留气体分析。

    EUV lithography apparatus and method for determining the contamination status of an EUV-reflective optical surface
    4.
    发明授权
    EUV lithography apparatus and method for determining the contamination status of an EUV-reflective optical surface 有权
    EUV光刻设备和用于确定EUV反射光学表面的污染状态的方法

    公开(公告)号：US08054446B2

    公开(公告)日：2011-11-08

    申请号：US12196075

    申请日：2008-08-21

    申请人： Dieter Kraus ,  Dirk Heinrich Ehm ,  Stefan-Wolfgang Schmidt

    发明人： Dieter Kraus ,  Dirk Heinrich Ehm ,  Stefan-Wolfgang Schmidt

    IPC分类号： G03B27/52 ,  G03B27/42

    CPC分类号： G01N21/94 ,  G01N21/55 ,  G01N2021/945 ,  G03B27/70 ,  G03F7/7085 ,  G03F7/70883 ,  G03F7/70916

    摘要： The invention relates to an EUV lithography apparatus with at least one EUV-reflective optical surface and a cavity ringdown reflectometer adapted to determine the contamination status of the EUV-reflective optical surface for at least one contaminating substance by determining the reflectivity of the EUV-reflective optical surface for radiation at a measuring wavelength (λm). The invention further relates to a method for determining the contamination status of at least one EUV-reflective optical surface arranged in an EUV lithography apparatus for at least one contaminating substance comprising determining the reflectivity of the EUV-reflective optical surface for radiation at a measuring wavelength (λm) using a cavity ringdown reflectometer.

    摘要翻译： 本发明涉及一种EUV光刻设备，其具有至少一个EUV反射光学表面和空腔响铃反射计，其适于通过确定EUV反射的反射率来确定至少一种污染物质的EUV反射光学表面的污染状态 用于测量波长（λm）的辐射的光学表面。 本发明还涉及一种用于确定在至少一种污染物质的EUV光刻设备中布置的至少一个EUV反射光学表面的污染状态的方法，包括确定EUV反射光学表面在测量波长处的辐射的反射率 （λm）使用空腔振铃反射计。

    EUV LITHOGRAPHY APPARATUS AND METHOD FOR DETERMINING THE CONTAMINATION STATUS OF AN EUV-REFLECTIVE OPTICAL SURFACE
    5.
    发明申请
    EUV LITHOGRAPHY APPARATUS AND METHOD FOR DETERMINING THE CONTAMINATION STATUS OF AN EUV-REFLECTIVE OPTICAL SURFACE 有权
    EUV光刻设备和确定反射光学表面污染状态的方法

    公开(公告)号：US20100045948A1

    公开(公告)日：2010-02-25

    申请号：US12196075

    申请日：2008-08-21

    申请人： Dieter KRAUS ,  Dirk Heinrich Ehm ,  Stefan-Wolfgang Schmidt

    发明人： Dieter KRAUS ,  Dirk Heinrich Ehm ,  Stefan-Wolfgang Schmidt

    IPC分类号： G03B27/70 ,  G01N21/94

    CPC分类号： G01N21/94 ,  G01N21/55 ,  G01N2021/945 ,  G03B27/70 ,  G03F7/7085 ,  G03F7/70883 ,  G03F7/70916

    摘要： The invention relates to an EUV lithography apparatus with at least one EUV-reflective optical surface and a cavity ringdown reflectometer adapted to determine the contamination status of the EUV-reflective optical surface for at least one contaminating substance by determining the reflectivity of the EUV-reflective optical surface for radiation at a measuring wavelength (λm). The invention further relates to a method for determining the contamination status of at least one EUV-reflective optical surface arranged in an EUV lithography apparatus for at least one contaminating substance comprising determining the reflectivity of the EUV-reflective optical surface for radiation at a measuring wavelength (λm) using a cavity ringdown reflectometer.

    摘要翻译： 本发明涉及一种EUV光刻设备，其具有至少一个EUV反射光学表面和空腔响铃反射计，其适于通过确定EUV反射的反射率来确定至少一种污染物质的EUV反射光学表面的污染状态 用于测量波长（λm）的辐射的光学表面。 本发明还涉及一种用于确定在至少一种污染物质的EUV光刻设备中布置的至少一个EUV反射光学表面的污染状态的方法，包括确定EUV反射光学表面在测量波长处的辐射的反射率 （λm）使用空腔振铃反射计。

    METHOD FOR CLEANING AN EUV LITHOGRAPHY DEVICE, METHOD FOR MEASURING THE RESIDUAL GAS ATMOSPHERE AND THE CONTAMINATION AND EUV LITHOGRAPHY DEVICE
    6.
    发明申请
    METHOD FOR CLEANING AN EUV LITHOGRAPHY DEVICE, METHOD FOR MEASURING THE RESIDUAL GAS ATMOSPHERE AND THE CONTAMINATION AND EUV LITHOGRAPHY DEVICE 有权
    用于清洁EUV光刻设备的方法，用于测量残余气体大气和污染物和EUV光刻设备的方法

    公开(公告)号：US20100034349A1

    公开(公告)日：2010-02-11

    申请号：US12555620

    申请日：2009-09-08

    申请人： Dieter KRAUS ,  Dirk Heinrich Ehm ,  Thomas Stein ,  Harald Woelfle ,  Stefan-Wolfgang Schmidt

    发明人： Dieter KRAUS ,  Dirk Heinrich Ehm ,  Thomas Stein ,  Harald Woelfle ,  Stefan-Wolfgang Schmidt

    IPC分类号： A61B6/02

    CPC分类号： G01N21/67 ,  G01N21/94 ,  G03F7/7085 ,  G03F7/70916 ,  G03F7/70925

    摘要： Components (30) in the interior of an EUV lithography device for extreme ultraviolet and soft X-ray wavelength range are cleaned by igniting a plasma, adjacent to the component (30) to be cleaned, using electrodes (29), wherein the electrodes (29) are adapted to the form of the component (30) to be cleaned. The residual gas atmosphere is measured spectroscopically on the basis of the plasma. An emission spectrum is preferably recorded in order to monitor the degree of cleaning. An optical fiber cable (31) with a coupling-in optical unit (32) is advantageously used for this purpose. Moreover, in order to monitor the contamination in the gas phase within the vacuum chambers during the operation of an EUV lithography device, it is proposed to provide modules configured to initiate a gas discharge and to detect radiation emitted on account of the gas discharge. The contamination in the gas phase can be deduced from the analysis of the measured spectrum.

    摘要翻译： 用于极紫外和软X射线波长范围的EUV光刻设备内部的部件（30）通过使用电极（29）点燃邻近被清洁部件（30）的等离子体来清洁，其中电极 29）适于被清洁的部件（30）的形式。 在等离子体的基础上光谱测量残留气体气氛。 优选记录发射光谱以监测清洁程度。 具有耦合入光学单元（32）的光纤电缆（31）有利地用于此目的。 此外，为了在EUV光刻设备的操作期间监测真空室内的气相中的污染，建议提供被配置为启动气体放电并且检测由于气体放电而发射的辐射的模块。 气相中的污染可以从测量光谱的分析推导出来。

    Optical arrangement, in particular in a projection exposure apparatus for EUV lithography
    10.
    发明授权
    Optical arrangement, in particular in a projection exposure apparatus for EUV lithography 有权
    光学布置，特别是在用于EUV光刻的投影曝光装置中

    公开(公告)号：US09041905B2

    公开(公告)日：2015-05-26

    申请号：US13414367

    申请日：2012-03-07

    申请人： Dirk Heinrich Ehm ,  Stefan-Wolfgang Schmidt ,  Guenther Dengel

    发明人： Dirk Heinrich Ehm ,  Stefan-Wolfgang Schmidt ,  Guenther Dengel

    IPC分类号： G03B27/52 ,  G03F7/20

    CPC分类号： G03F7/70933 ,  G03F7/70808 ,  G03F7/70825 ,  G03F7/70916 ,  G03F7/70983

    摘要： An optical arrangement, in particular in a projection exposure apparatus for EUV lithography. In an aspect an optical arrangement has a housing (100, 200, 550, 780) in which at least one optical element is arranged, and at least one subhousing (140, 240, 560, 790, 811, 823, 824, 831, 841) which is arranged within the housing and which surrounds at least one beam incident on the optical element in operation of the optical system, wherein the internal space of the subhousing is in communication with the external space of the subhousing by way of at least one opening, wherein provided in the region of the opening is at least one flow guide portion which deflects a flushing gas flow passing through the opening from the internal space to the external space of the subhousing, at least once in its direction.

    摘要翻译： 一种光学装置，特别是在用于EUV光刻的投影曝光装置中。 在一个方面中，光学装置具有其中布置有至少一个光学元件的壳体（100,200,550,780），以及至少一个子壳体（140,240,560,790,811,823,824,831,823,823,824,831） 841），其布置在壳体内并且围绕在光学系统的操作中入射到光学元件上的至少一个光束，其中，所述子壳体的内部空间通过至少一个与所述子壳体的外部空间连通 开口，其中设置在所述开口的区域中的至少一个流动引导部分使得从所述内部空间通过所述开口的冲洗气体流将所述冲击气流从所述内部空间偏转至所述方向上至少一次。