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公开(公告)号：US08885141B2
公开(公告)日：2014-11-11
申请号：US13088299
申请日：2011-04-15
申请人： Wolfgang Singer , Yim-Bun-Patrick Kwan , Stefan-Wolfgang Schmidt , Dirk Heinrich Ehm , Dieter Kraus , Stefan Wiesner , Stefan Koehler , Almut Czap , Hin Yiu Anthony Chung
发明人： Wolfgang Singer , Yim-Bun-Patrick Kwan , Stefan-Wolfgang Schmidt , Dirk Heinrich Ehm , Dieter Kraus , Stefan Wiesner , Stefan Koehler , Almut Czap , Hin Yiu Anthony Chung
CPC分类号： G03F7/70925 , G03F1/82 , G03F1/86 , G03F7/70733 , G03F7/7085 , G03F7/70866
摘要： An EUV lithography device including an illumination device for illuminating a mask at an illumination position in the EUV lithography device and a projection device for imaging a structure provided on the mask onto a light-sensitive substrate. The EUV lithography device has a processing device (15) for processing an optical element (6a), in particular the mask, preferably in a locally resolved manner, at a processing position in the EUV lithography device. For activating at least one gas component of the gas stream (27), the processing device (15) includes a particle generator (30) for generating a particle beam, in particular an electron beam (30a), and/or a high-frequency generator.
摘要翻译： 一种EUV光刻设备，包括用于在EUV光刻设备中的照明位置处照射掩模的照明设备和用于将设置在掩模上的结构成像到感光基板上的投影设备。 EUV光刻设备具有处理装置（15），用于在EUV光刻设备中的处理位置优选地以局部分辨的方式处理光学元件（6a），特别是掩模。 为了激活气体流（27）的至少一种气体成分，处理装置（15）包括用于产生粒子束（特别是电子束（30a））和/或高频的粒子发生器（30） 发电机。
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2.发明授权Method for cleaning an EUV lithography device, method for measuring the residual gas atmosphere and the contamination and EUV lithography device 有权用于清洁EUV光刻设备的方法，用于测量残余气体气氛的方法以及污染物和EUV光刻设备公开(公告)号：US07911598B2
公开(公告)日：2011-03-22
申请号：US12555620
申请日：2009-09-08
IPC分类号： G01N21/73
CPC分类号： G01N21/67 , G01N21/94 , G03F7/7085 , G03F7/70916 , G03F7/70925
摘要： Components (30) in the interior of an EUV lithography device for extreme ultraviolet and soft X-ray wavelength range are cleaned by igniting a plasma, adjacent to the component (30) to be cleaned, using electrodes (29), wherein the electrodes (29) are adapted to the form of the component (30) to be cleaned. The residual gas atmosphere is measured spectroscopically on the basis of the plasma. An emission spectrum is preferably recorded in order to monitor the degree of cleaning. An optical fiber cable (31) with a coupling-in optical unit (32) is advantageously used for this purpose. Moreover, in order to monitor the contamination in the gas phase within the vacuum chambers during the operation of an EUV lithography device, it is proposed to provide modules configured to initiate a gas discharge and to detect radiation emitted on account of the gas discharge. The contamination in the gas phase can be deduced from the analysis of the measured spectrum.
摘要翻译： 用于极紫外和软X射线波长范围的EUV光刻设备内部的部件（30）通过使用电极（29）点燃邻近被清洁部件（30）的等离子体来清洁，其中电极 29）适于被清洁的部件（30）的形式。 在等离子体的基础上光谱测量残留气体气氛。 优选记录发射光谱以监测清洁程度。 具有耦合入光学单元（32）的光纤电缆（31）有利地用于此目的。 此外，为了在EUV光刻设备的操作期间监测真空室内的气相中的污染，建议提供被配置为启动气体放电并且检测由于气体放电而发射的辐射的模块。 气相中的污染可以从测量光谱的分析推导出来。
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3.发明授权EUV lithography apparatus and method for determining the contamination status of an EUV-reflective optical surface 有权EUV光刻设备和用于确定EUV反射光学表面的污染状态的方法公开(公告)号：US08054446B2
公开(公告)日：2011-11-08
申请号：US12196075
申请日：2008-08-21
CPC分类号： G01N21/94 , G01N21/55 , G01N2021/945 , G03B27/70 , G03F7/7085 , G03F7/70883 , G03F7/70916
摘要： The invention relates to an EUV lithography apparatus with at least one EUV-reflective optical surface and a cavity ringdown reflectometer adapted to determine the contamination status of the EUV-reflective optical surface for at least one contaminating substance by determining the reflectivity of the EUV-reflective optical surface for radiation at a measuring wavelength (λm). The invention further relates to a method for determining the contamination status of at least one EUV-reflective optical surface arranged in an EUV lithography apparatus for at least one contaminating substance comprising determining the reflectivity of the EUV-reflective optical surface for radiation at a measuring wavelength (λm) using a cavity ringdown reflectometer.
摘要翻译： 本发明涉及一种EUV光刻设备，其具有至少一个EUV反射光学表面和空腔响铃反射计，其适于通过确定EUV反射的反射率来确定至少一种污染物质的EUV反射光学表面的污染状态 用于测量波长（λm）的辐射的光学表面。 本发明还涉及一种用于确定在至少一种污染物质的EUV光刻设备中布置的至少一个EUV反射光学表面的污染状态的方法，包括确定EUV反射光学表面在测量波长处的辐射的反射率 （λm）使用空腔振铃反射计。
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4.发明申请公开(公告)号：US20100045948A1
公开(公告)日：2010-02-25
申请号：US12196075
申请日：2008-08-21
CPC分类号： G01N21/94 , G01N21/55 , G01N2021/945 , G03B27/70 , G03F7/7085 , G03F7/70883 , G03F7/70916
摘要： The invention relates to an EUV lithography apparatus with at least one EUV-reflective optical surface and a cavity ringdown reflectometer adapted to determine the contamination status of the EUV-reflective optical surface for at least one contaminating substance by determining the reflectivity of the EUV-reflective optical surface for radiation at a measuring wavelength (λm). The invention further relates to a method for determining the contamination status of at least one EUV-reflective optical surface arranged in an EUV lithography apparatus for at least one contaminating substance comprising determining the reflectivity of the EUV-reflective optical surface for radiation at a measuring wavelength (λm) using a cavity ringdown reflectometer.
摘要翻译： 本发明涉及一种EUV光刻设备，其具有至少一个EUV反射光学表面和空腔响铃反射计，其适于通过确定EUV反射的反射率来确定至少一种污染物质的EUV反射光学表面的污染状态 用于测量波长（λm）的辐射的光学表面。 本发明还涉及一种用于确定在至少一种污染物质的EUV光刻设备中布置的至少一个EUV反射光学表面的污染状态的方法，包括确定EUV反射光学表面在测量波长处的辐射的反射率 （λm）使用空腔振铃反射计。
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5.发明授权公开(公告)号：US09046794B2
公开(公告)日：2015-06-02
申请号：US12883247
申请日：2010-09-16
申请人： Stefan Hembacher , Dieter Kraus , Dirk Heinrich Ehm , Stefan-Wolfgang Schmidt , Stefan Koehler , Almut Czap , Stefan Wiesner , Hin Yiu Anthony Chung
发明人： Stefan Hembacher , Dieter Kraus , Dirk Heinrich Ehm , Stefan-Wolfgang Schmidt , Stefan Koehler , Almut Czap , Stefan Wiesner , Hin Yiu Anthony Chung
IPC分类号： G03F7/20
CPC分类号： G03F7/70925
摘要： In order to clean optical components (35) inside an EUV lithography device in a gentle manner, a cleaning module for an EUV lithography device includes a supply line for molecular hydrogen and a heating filament for producing atomic hydrogen and hydrogen ions for cleaning purposes. The cleaning module also has an element, (33) arranged to apply an electric and/or magnetic field, downstream of the heating filament (29) in the direction of flow of the hydrogen (31, 32). The element can be designed as a deflection unit, as a filter unit and/or as an acceleration unit for the ion beam (32).
摘要翻译： 为了以平缓的方式清洗EUV光刻设备内的光学元件（35），用于EUV光刻设备的清洁模块包括用于分子氢的供应管线和用于产生原子氢和氢离子用于清洁目的的加热丝。 清洁模块还具有一个元件（33），其布置成沿着氢气（31,32）的流动方向在加热丝（29）的下游施加电场和/或磁场。 元件可以设计为偏转单元，作为过滤器单元和/或用作离子束（32）的加速单元。
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公开(公告)号：US20110279799A1
公开(公告)日：2011-11-17
申请号：US13088299
申请日：2011-04-15
申请人： Wolfgang Singer , Yim-Bun-Patrick Kwan , Stefan-Wolfgang Schmidt , Dirk Heinrich Ehm , Dieter Kraus , Stefan Wiesner , Stefan Koehler , Almut Czap , Hin Yiu Anthony Chung
发明人： Wolfgang Singer , Yim-Bun-Patrick Kwan , Stefan-Wolfgang Schmidt , Dirk Heinrich Ehm , Dieter Kraus , Stefan Wiesner , Stefan Koehler , Almut Czap , Hin Yiu Anthony Chung
IPC分类号： G03B27/42
CPC分类号： G03F7/70925 , G03F1/82 , G03F1/86 , G03F7/70733 , G03F7/7085 , G03F7/70866
摘要： An EUV lithography device including an illumination device for illuminating a mask at an illumination position in the EUV lithography device and a projection device for imaging a structure provided on the mask onto a light-sensitive substrate. The EUV lithography device has a processing device (15) for processing an optical element (6a), in particular the mask, preferably in a locally resolved manner, at a processing position in the EUV lithography device. For activating at least one gas component of the gas stream (27), the processing device (15) comprises a particle generator (30) for generating a particle beam, in particular an electron beam (30a), and/or a high-frequency generator.
摘要翻译： 一种EUV光刻设备，包括用于在EUV光刻设备中的照明位置处照射掩模的照明设备和用于将设置在掩模上的结构成像到感光基板上的投影设备。 EUV光刻设备具有处理装置（15），用于在EUV光刻设备中的处理位置优选地以局部分辨的方式处理光学元件（6a），特别是掩模。 为了激活气流（27）的至少一种气体成分，处理装置（15）包括用于产生粒子束，特别是电子束（30a）和/或高频的粒子发生器（30） 发电机。
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7.发明申请METHOD FOR CLEANING AN EUV LITHOGRAPHY DEVICE, METHOD FOR MEASURING THE RESIDUAL GAS ATMOSPHERE AND THE CONTAMINATION AND EUV LITHOGRAPHY DEVICE 有权用于清洁EUV光刻设备的方法，用于测量残余气体大气和污染物和EUV光刻设备的方法公开(公告)号：US20100034349A1
公开(公告)日：2010-02-11
申请号：US12555620
申请日：2009-09-08
IPC分类号： A61B6/02
CPC分类号： G01N21/67 , G01N21/94 , G03F7/7085 , G03F7/70916 , G03F7/70925
摘要： Components (30) in the interior of an EUV lithography device for extreme ultraviolet and soft X-ray wavelength range are cleaned by igniting a plasma, adjacent to the component (30) to be cleaned, using electrodes (29), wherein the electrodes (29) are adapted to the form of the component (30) to be cleaned. The residual gas atmosphere is measured spectroscopically on the basis of the plasma. An emission spectrum is preferably recorded in order to monitor the degree of cleaning. An optical fiber cable (31) with a coupling-in optical unit (32) is advantageously used for this purpose. Moreover, in order to monitor the contamination in the gas phase within the vacuum chambers during the operation of an EUV lithography device, it is proposed to provide modules configured to initiate a gas discharge and to detect radiation emitted on account of the gas discharge. The contamination in the gas phase can be deduced from the analysis of the measured spectrum.
摘要翻译： 用于极紫外和软X射线波长范围的EUV光刻设备内部的部件（30）通过使用电极（29）点燃邻近被清洁部件（30）的等离子体来清洁，其中电极 29）适于被清洁的部件（30）的形式。 在等离子体的基础上光谱测量残留气体气氛。 优选记录发射光谱以监测清洁程度。 具有耦合入光学单元（32）的光纤电缆（31）有利地用于此目的。 此外，为了在EUV光刻设备的操作期间监测真空室内的气相中的污染，建议提供被配置为启动气体放电并且检测由于气体放电而发射的辐射的模块。 气相中的污染可以从测量光谱的分析推导出来。
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公开(公告)号：US08953145B2
公开(公告)日：2015-02-10
申请号：US13035056
申请日：2011-02-25
CPC分类号： G03F7/70916 , G03F7/7085 , G03F7/70983
摘要： An EUV (extreme ultraviolet) lithography apparatus (1) including: a housing (1a) enclosing an interior (15), at least one reflective optical element (5, 6, 8, 9, 10, 14.1 to 14.6) arranged in the interior (15), a vacuum generating unit (1b) generating a residual gas atmosphere in the interior (15), and a residual gas analyzer (18a, 18b) detecting at least one contaminating substance (17a) in the residual gas atmosphere. The residual gas analyzer (18a) has a storage device (21) having an ion trap for storing the contaminating substance (17a). Additionally, a method for detecting at least one contaminating substance by residual gas analysis of a residual gas atmosphere of an EUV lithography apparatus (1) having a housing (1a) having an interior (15), in which at least one reflective optical element (5, 6, 8, 9, 10, 14.1 to 14.6), is arranged, wherein the contaminating substance (17a) is stored in a storage device (21) in order to carry out the residual gas analysis.
摘要翻译： 一种EUV（极紫外）光刻设备（1），包括：包围内部的壳体（1a），布置在内部的至少一个反射光学元件（5,6,8,9,10,11.1至14.6） （15），在内部（15）中产生残留气体气氛的真空发生单元（1b）和在残留气体气氛中检测至少一种污染物质（17a）的残留气体分析器（18a，18b）。 残留气体分析器（18a）具有具有用于存储污染物质（17a）的离子阱的存储装置（21）。 另外，通过对具有内部（15）的壳体（1a）的EUV光刻设备（1）的残留气体气体的残留气体分析来检测至少一种污染物质的方法，其中至少一个反射光学元件 5，6，8，9，10，14.1至14.6），其中污染物质（17a）储存在存储装置（21）中以便进行残留气体分析。
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9.发明授权Arrangement for use in a projection exposure tool for microlithography having a reflective optical element 有权用于具有反射光学元件的微光刻的投影曝光工具中的布置公开(公告)号：US09354529B2
公开(公告)日：2016-05-31
申请号：US13561502
申请日：2012-07-30
申请人： Dirk Heinrich Ehm , Maarten van Kampen , Stefan-Wolfgang Schmidt , Vadim Yevgenyevich Banine , Erik Loopstra
发明人： Dirk Heinrich Ehm , Maarten van Kampen , Stefan-Wolfgang Schmidt , Vadim Yevgenyevich Banine , Erik Loopstra
CPC分类号： G03F7/70891 , G01J1/58 , G02B5/0891 , G03F7/70316 , G03F7/70558 , G03F7/7085 , G03F7/70958
摘要： An arrangement for use in a projection exposure tool (100) for microlithography comprises a reflective optical element (10; 110) and a radiation detector (30; 32; 130). The reflective optical element (10; 110) comprises a carrier element (12) guaranteeing the mechanical strength of the optical element (10; 110) and a reflective coating (18) disposed on the carrier element (12) for reflecting a use radiation (20a). The carrier element (12) is made of a material which upon interaction with the use radiation (20a) emits a secondary radiation (24) the wavelength of which differs from the wavelength of the use radiation (20a), and the radiation detector (30; 32; 130) is configured to detect the secondary radiation (24).
摘要翻译： 用于微光刻的投影曝光工具（100）中的布置包括反射光学元件（10; 110）和辐射检测器（30; 32; 130）。 反射光学元件（10; 110）包括保证光学元件（10; 110）的机械强度的载体元件（12）和设置在载体元件（12）上的反射涂层（18），用于反射使用辐射 20a）。 载体元件（12）由与使用辐射（20a）相互作用发射其波长与使用辐射（20a）的波长不同的次级辐射（24）和辐射检测器（30）的材料制成 ; 32; 130）被配置为检测所述次级辐射（24）。
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公开(公告)号：US20120281196A1
公开(公告)日：2012-11-08
申请号：US13460973
申请日：2012-05-01
申请人： Ulrich Loering , Vladimir Kamenov , Dirk Heinrich Ehm , Stefan-Wolfgang Schmidt , Moritz Becker , Andreas Wurmbrand
发明人： Ulrich Loering , Vladimir Kamenov , Dirk Heinrich Ehm , Stefan-Wolfgang Schmidt , Moritz Becker , Andreas Wurmbrand
CPC分类号： G02B1/113 , G02B5/005 , G02B17/0663 , G02B27/0006 , G02B27/0018 , G03F7/70808 , G03F7/70941
摘要： A projection lens of a projection exposure apparatus, for imaging a mask which can be positioned in an object plane onto a light-sensitive layer which can be positioned in an image plane, includes a housing, in which at least one optical element is arranged, at least one partial housing which is arranged within said housing and which at least regionally surrounds light passing from the object plane as far as the image plane during the operation of the projection lens, and a reflective structure, which reduces a light proportion which reaches the image plane after reflection at the at least one partial housing, by comparison with an analogous arrangement without said reflective structure.
摘要翻译： 投影曝光装置的投影透镜，用于将可位于物平面中的掩模成像到可位于像平面中的感光层上的投影透镜包括其中布置有至少一个光学元件的外壳， 至少一个部分壳体布置在所述壳体内，并且至少在区域上围绕在投影透镜的操作期间从物体平面延伸至图像平面的光，以及反射结构，其减少到达 通过与没有所述反射结构的类似布置进行比较，在至少一个部分壳体上反射之后的图像平面。
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