公开(公告)号：US4282542A

公开(公告)日：1981-08-04

申请号：US81805

申请日：1979-12-04

申请人： Dieter Silber ,  Marius Fullmann ,  Wolfgang Winter

发明人： Dieter Silber ,  Marius Fullmann ,  Wolfgang Winter

IPC分类号： H01L29/74 ,  H01L31/111

CPC分类号： H01L31/1113 ,  H01L29/7428

摘要： An interference-potential-compensated thyristor comprising, a common emitter zone of one conductivity type, a common main base zone of an opposite conductivity type in contact with said common emitter zone, a common control base of said one conductivity type in contact with said common main base, first and second outer emitter zones of said opposite conductivity type in contact with said common control base, a common metallized electrode layer in contact with said common emitter zone, a first opposite metallized electrode layer in contact with a portion of said common control base and said first outer emitter zone at a junction between said common control base and said first outer emitter zone, and a second opposite metallized electrode layer in contact with a portion of said common control base and said second outer emitter zone at a junction between said common control base and said second outer emitter zone, said first outer emitter zone defining a pilot thyristor part thereabout and said second outer emitter zone defining a sequential thyristor thereabout, a geometry of said first and second outer emitter zones and said first and second opposite metallized electrode layers being chosen so that a capacitance resulting from a forward blocking p-n junction and the surface resistance of said common control base result in a potential which compensates and which approximately corresponds to a maximum interference potential occurring in said common control base beneath said first outer emitter zone, and with an optical or electrical triggering, a potential develops in said common control base adjacent said portion of said first outer emitter zone in contact with said first opposite metallized electrode layer which is substantially lower than the maximum turn-on potential produced in the common control base beneath said first outer emitter zone.

摘要翻译： 一种干涉电位补偿晶闸管，包括：一个导电类型的公共发射极区，与所述共发射极区接触的相反导电类型的公共主基区，与所述公共接触的所述一导电类型的公共控制基极 主基座，与所述公共控制基座接触的所述相反导电类型的第一和第二外部发射极区域，与所述公共发射极区域接触的公共金属化电极层，与所述公共控制部分的一部分接触的第一相对的金属化电极层 在所述公共控制基极和所述第一外部发射极区域之间的接合处的所述第一外部发射极区域和与所述公共控制基极和所述第一外部发射极区域之间的接合处的所述公共控制基极和所述第二外部发射极区域的一部分接触的第二相对的金属化电极层 公共控制基极和所述第二外部发射极区域，所述第一外部发射极区域在其周围限定引导可控硅部件 d所述第二外部发射极区限定在其周围的顺序晶闸管，所述第一和第二外部发射极区的几何形状以及所述第一和第二相对的金属化电极层被选择为使得由正向阻挡pn结产生的电容和所述第一和第二外部发射极的表面电阻 公共控制基底导致补偿的电位，并且其大致对应于在所述第一外部发射极区域下方的所述公共控制基底中出现的最大干扰电位，并且随着光学或电气触发，在所述公共控制基座中邻近所述部分产生电位 所述第一外部发射极区域与所述第一相对的金属化电极层接触，所述第一相对的金属化电极层基本上低于在所述第一外部发射极区域下面的公共控制基底中产生的最大导通电位。

公开(公告)号：US4122480A

公开(公告)日：1978-10-24

申请号：US738363

申请日：1976-11-03

申请人： Dieter Silber ,  Karl-Julius Finck ,  Marius Fullmann ,  Wolfgang Winter

发明人： Dieter Silber ,  Karl-Julius Finck ,  Marius Fullmann ,  Wolfgang Winter

IPC分类号： H01L31/111 ,  H01L29/74

CPC分类号： H01L31/1113

摘要： A light fired thyristor including a semiconductor body having four zones of alternatingly opposite conductivity types constituting a first or cathode emitter zone, a control base zone adjacent thereto, a main base zone and a second or anode emitter zone with the cathode emitter zone being formed within the control base zone at one major surface of the semiconductor body and being divided into a plurality of separate regions of which one serves as the firing region of the first emitter zone to fire the thyristor in response to impinging radiation energy. The firing region of the first emitter zone is provided in part with a first ohmic contact which is ohmically connected to a further ohmic contact connected to the control base region adjacent the edge of the semiconductor body. The remaining regions of the first emitter zone are provided with a cathode contact which simultaneously contacts the portions of the control base zone between these regions and forms short circuits with the control base zone. Consequently with interfering currents which are approximately uniformly distributed over the thyristor area, an increase in potential is produced in the firing region of the first emitter zone which increase is in the same direction as the increase in potential in the firing region of the control base zone and the likelihood of a faulty firing of the thyristor is reduced.

摘要翻译： 一种点燃晶闸管，包括具有构成第一或阴极发射区的交替相反导电类型的四个区域的半导体本体，与其相邻的控制基区，主基极区和具有阴极发射区的第二或阳极发射区， 所述控制基区在所述半导体主体的一个主表面处，并且被分成多个分开的区域，其中一个区域用作所述第一发射区的点火区域，以响应于入射辐射能而触发所述晶闸管。 第一发射区的发射区域部分地设置有第一欧姆接触，欧姆接触与连接到与半导体本体的边缘相邻的控制基极区域的另一欧姆接触欧姆连接。 第一发射区的剩余区域设置有阴极接触件，其同时接触这些区域之间的控制基区的部分并且与控制基区形成短路。 因此，由于大致均匀地分布在晶闸管区域上的干扰电流，在第一发射区的点火区域产生增加的电位，该增加与控制基区的烧制区域中的电位增加方向相同 并且晶闸管发生故障的可能性降低。

公开(公告)号：US4217504A

公开(公告)日：1980-08-12

申请号：US885072

申请日：1978-03-09

申请人： Marius Fullmann ,  Friedhelm Sawitzki ,  Dieter Silber

发明人： Marius Fullmann ,  Friedhelm Sawitzki ,  Dieter Silber

IPC分类号： H03K17/73 ,  H03K17/72

CPC分类号： H03K17/73

摘要： A semiconductor switch including a main thyristor and an auxiliary thyristor which can both be switched on and off by a control current. The anodes of the two thyristors are connected together and lead to a first load current terminal for the switch, the cathode of the main thyristor leads to a second load current terminal for the switch, the control electrode of the main thyristor is connected with the cathode of the auxiliary thyristor, and the control current for the switch is fed in via the control electrode of the auxiliary thyristor. The turn-off gain of the main thyristor is greater than the turn-off gain of the auxiliary thyristor and the holding current of the auxiliary thyristor is lower than the holding current of the main thyristor.

摘要翻译： 一种包括主晶闸管和辅助晶闸管的半导体开关，其可以通过控制电流接通和断开。 两个晶闸管的阳极连接在一起并导通到开关的第一个负载电流端子，主晶闸管的阴极通向开关的第二个负载电流端子，主晶闸管的控制电极与阴极相连 的辅助晶闸管，并且开关的控制电流通过辅助晶闸管的控制电极馈入。 主晶闸管的关断增益大于辅助晶闸管的关断增益，辅助晶闸管的保持电流低于主晶闸管的保持电流。

公开(公告)号：US4195306A

公开(公告)日：1980-03-25

申请号：US711690

申请日：1976-08-04

申请人： Marius Fullmann ,  Friedhelm Sawitzki ,  Dieter Silber

发明人： Marius Fullmann ,  Friedhelm Sawitzki ,  Dieter Silber

IPC分类号： H02H7/12 ,  H01L29/74 ,  H01L29/744 ,  H02M1/06 ,  H01L29/747

CPC分类号： H01L29/744 ,  H02M1/06

摘要： A gate turn-off thyristor device including a gate turn-off main thyristor and a gate turn-off auxiliary thyristor, each having an emitter, a control base, a main base and a counter-emitter, integrated in a semiconductor body including three zones of alternatingly opposite conductivity type. The three zones of the semiconductor body are each divided into two regions to provide the counter-emitter, main base and control base zones of the two thyristors, while the emitter zones of the main thyristor and of the auxiliary thyristor are separate zones formed in the respective associated regions constituting the control base zones of the respective thyristors. The two counter-emitter zones of the two thyristors are commonly contacted, and the two regions of at least one of the zones of the semiconductor body are doped differently so that the turn-off gain of the main thyristor is greater than the turn-off gain of the auxiliary thyristor and the holding current of the auxiliary thyristor is smaller than the holding current of the main thyristor.

摘要翻译： 一种栅极截止晶闸管器件，包括栅极截止主晶闸管和栅极截止辅助晶闸管，每个具有发射极，控制基极，主基极和反向发射极，集成在包括三个区域的半导体主体中 交替相反的导电类型。 半导体主体的三个区域分为两个区域，以提供两个晶闸管的反向发射极，主基极和控制基区，而主晶闸管和辅助晶闸管的发射极区是形成在 各个相关联的区域构成各个晶闸管的控制基区。 两个晶闸管的两个反向发射极区域通常被接触，并且半导体主体的至少一个区域的两个区域被不同地掺杂，使得主晶闸管的关断增益大于关断 辅助晶闸管的增益和辅助晶闸管的保持电流小于主晶闸管的保持电流。

公开(公告)号：US4208669A

公开(公告)日：1980-06-17

申请号：US937975

申请日：1978-08-30

申请人： Dieter Silber ,  Marius Fullman ,  Karl-Julius Finck ,  Wolfgang Winter

发明人： Dieter Silber ,  Marius Fullman ,  Karl-Julius Finck ,  Wolfgang Winter

IPC分类号： H01L29/74

CPC分类号： H01L29/7412

摘要： A controllable semiconductor rectifier which is subject to an interference potential and controllable by a control power comprises a first emitter layer, a first main electrode connected to the first emitter layer, a control base layer connected to the first emitter layer, a main base layer connected to the control base layer and a second emitter layer connected to the main base layer. A connection is established between a portion of the control base layer and the first emitter layer for applying a compensating potential to the first emitter layer for compensating the interference potential and a limiting non-linear component is connected between a portion of the control base layer and the first emitter layer for limiting the interference potential.

摘要翻译： 经受干扰电位并由控制功率控制的可控半导体整流器包括第一发射极层，连接到第一发射极层的第一主电极，连接到第一发射极层的控制基极层，连接到第一发射极层的主基极层 到控制基层和连接到主基层的第二发射极层。 在控制基层的一部分和第一发射极层之间建立连接，用于向第一发射极层施加补偿电位以补偿干扰电位，并且限制非线性分量连接在控制基极层的一部分和 用于限制干扰电位的第一发射极层。

公开(公告)号：US20050054147A1

公开(公告)日：2005-03-10

申请号：US10497380

申请日：2002-11-20

申请人： Bernd Gustmann ,  Paul-Christian Mourick ,  Gerhard Miller ,  Dieter Silber

发明人： Bernd Gustmann ,  Paul-Christian Mourick ,  Gerhard Miller ,  Dieter Silber

IPC分类号： H01L23/48 ,  H01L23/66 ,  H01L25/07 ,  H02M7/00 ,  H01L21/8238

CPC分类号： H02M7/003 ,  H01L23/66 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L25/072 ,  H01L2223/6611 ,  H01L2224/45124 ,  H01L2224/48091 ,  H01L2224/48137 ,  H01L2224/49111 ,  H01L2224/49113 ,  H01L2224/49175 ,  H01L2924/01005 ,  H01L2924/0101 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01019 ,  H01L2924/01029 ,  H01L2924/01039 ,  H01L2924/01047 ,  H01L2924/01052 ,  H01L2924/01061 ,  H01L2924/01068 ,  H01L2924/01082 ,  H01L2924/01084 ,  H01L2924/01088 ,  H01L2924/1301 ,  H01L2924/13055 ,  H01L2924/15787 ,  H01L2924/19043 ,  H01L2924/30105 ,  H01L2924/30107 ,  H01L2924/3011 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2224/48227 ,  H01L2924/00012

摘要： The present invention relates to a circuit assembly with at least two semiconductor components, each having terminals, whereby at least one terminal of the first semiconductor component is connected to a terminal of the other semiconductor component in an electrically conductive manner. The circuit assembly damps high-frequency oscillations that occur during switching operations. An eddy-current damping structure is provided above said assembly at a distance from the semiconductor components or said semiconductor components are directly connected to each other by means of a high-resistance wire connection in addition to the existent electroconductive connection.

摘要翻译： 本发明涉及具有至少两个半导体部件的电路组件，每个半导体部件均具有端子，由此第一半导体部件的至少一个端子以导电方式连接到另一个半导体部件的端子。 电路组件会阻止在开关操作期间发生的高频振荡。 除了存在的导电连接之外，在距离半导体部件一定距离处的上述组件上设有涡流阻尼结构，或者所述半导体部件通过高电阻线连接彼此直接连接。

公开(公告)号：US4618781A

公开(公告)日：1986-10-21

申请号：US246019

申请日：1981-03-20

申请人： Dieter Silber ,  Friedhelm Sawitzki ,  Kurt Roy

发明人： Dieter Silber ,  Friedhelm Sawitzki ,  Kurt Roy

IPC分类号： H01L29/74 ,  H01L29/744 ,  H03K17/60

CPC分类号： H01L29/744 ,  H01L29/7408 ,  H01L29/7412

摘要： A gate turn-off thyristor comprising, a first emitter layer of one conductivity type, a main base layer of another conductivity type connected to said first emitter layer and a control base layer of the first conductivity type connected to the main base layer. A second emitter of the other conductivity type is connected to the control base layer at a junction which surrounds a portion of the second emitter layer. An emitter contact is connected to the second emitter layer and a control base contact is connected to the control base layer. The gate turn-off thyristor is turned off by a short circuiting of the control base contact with the emitter contact. The surface resistance of the control base layer between the second emitter layer and the control base contact is selected so that, with a control base turn-off current applied which is sufficient for turning off the thyristor, a potential appears on a lateral resistance in the control base layer which is less than a potential appearing at the junction. This difference in potential is used as an additional driving potential for the hole or electron current flowing over the lateral resistance and the control base layer.

摘要翻译： 一种栅极截止晶闸管，包括：一个导电类型的第一发射极层，连接到所述第一发射极层的另一导电类型的主基极层和连接到主基极层的第一导电类型的控制基极层。 另一导电类型的第二发射极在围绕第二发射极层的一部分的结处连接到控制基极层。 发射极触点连接到第二发射极层，并且控制基极触点连接到控制基极层。 栅极关断晶闸管由于与发射极触点的控制基极接触短路而被关断。 选择第二发射极层和控制基极触点之间的控制基极层的表面电阻，使得施加足以关断晶闸管的控制基极截止电流，在侧向电阻中出现电位 控制基层小于出现在接合处的电位。 这种电位差被用作流过横向电阻和控制基极层的空穴或电子电流的附加驱动电位。

公开(公告)号：US06734520B2

公开(公告)日：2004-05-11

申请号：US09861427

申请日：2001-05-18

申请人： Holger Kapels ,  Dieter Silber ,  Robert Plikat

发明人： Holger Kapels ,  Dieter Silber ,  Robert Plikat

IPC分类号： H01L27095

CPC分类号： H01L29/7811 ,  H01L29/0649 ,  H01L29/0653 ,  H01L29/408 ,  H01L29/7802

摘要： A semiconductor component includes a first layer and at least one adjacent semiconductor layer or metallic layer, which forms a rectifying junction with the first layer. Further semiconductor layers and metallic layers are provided for contacting the component. Insulating or semi-insulating structures are introduced into the first layer in a plane parallel to the rectifying junction. These structures are shaped like dishes with their edges bent up towards the rectifying junction. A method of producing such a semiconductor component is also provided.

摘要翻译： 半导体部件包括第一层和与第一层形成整流结的至少一个相邻的半导体层或金属层。 提供了进一步的半导体层和金属层用于使部件接触。 绝缘或半绝缘结构在平行于整流结的平面中引入第一层。 这些结构的形状像碟子一样弯曲，朝向整流结。 还提供了一种制造这种半导体部件的方法。

公开(公告)号：US07023086B2

公开(公告)日：2006-04-04

申请号：US10497380

申请日：2002-11-20

申请人： Bernd Gutsmann ,  Paul-Christian Mourick ,  Gerhard Miller ,  Dieter Silber

发明人： Bernd Gutsmann ,  Paul-Christian Mourick ,  Gerhard Miller ,  Dieter Silber

IPC分类号： H01L23/34

CPC分类号： H02M7/003 ,  H01L23/66 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L25/072 ,  H01L2223/6611 ,  H01L2224/45124 ,  H01L2224/48091 ,  H01L2224/48137 ,  H01L2224/49111 ,  H01L2224/49113 ,  H01L2224/49175 ,  H01L2924/01005 ,  H01L2924/0101 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01019 ,  H01L2924/01029 ,  H01L2924/01039 ,  H01L2924/01047 ,  H01L2924/01052 ,  H01L2924/01061 ,  H01L2924/01068 ,  H01L2924/01082 ,  H01L2924/01084 ,  H01L2924/01088 ,  H01L2924/1301 ,  H01L2924/13055 ,  H01L2924/15787 ,  H01L2924/19043 ,  H01L2924/30105 ,  H01L2924/30107 ,  H01L2924/3011 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2224/48227 ,  H01L2924/00012

摘要： The present invention relates to a circuit assembly with at least two semiconductor components, each having terminals, whereby at least one terminal of the first semiconductor component is connected to a terminal of the other semiconductor component in an electrically conductive manner. The circuit assembly damps high-frequency oscillations that occur during switching operations. An eddy-current damping structure is provided above said assembly at a distance from the semiconductor components or said semiconductor components are directly connected to each other by means of a high-resistance wire connection in addition to the existent electroconductive connection.

摘要翻译： 本发明涉及具有至少两个半导体部件的电路组件，每个半导体部件均具有端子，由此第一半导体部件的至少一个端子以导电方式连接到另一个半导体部件的端子。 电路组件会阻止在开关操作期间发生的高频振荡。 除了存在的导电连接之外，在距离半导体部件一定距离处的上述组件上设有涡流阻尼结构，或者所述半导体部件通过高电阻线连接彼此直接连接。

公开(公告)号：US06495864B1

公开(公告)日：2002-12-17

申请号：US09700357

申请日：2001-01-11

申请人： Dieter Silber ,  Wolfgang Wondrak ,  Robert Plikat

发明人： Dieter Silber ,  Wolfgang Wondrak ,  Robert Plikat

IPC分类号： H01L2974

CPC分类号： H01L29/408 ,  H01L21/7624 ,  H01L29/7394 ,  H01L29/7436 ,  H01L29/861 ,  H01L29/868

摘要： The invention concerns a semiconductor component with at east one lateral region which is provided to accommodate a lateral electric field strength, whereby the semiconductor body within the body and/or in regions proximal to the surface of the semiconductor body at least over regions thereof has a lateral three-dimensional structure which has vertical recesses in the semiconductor body within which there are electrical conductors which are smaller than in the intervening spaces of the semiconductor body between the recesses, as well as a method for making and of using the semiconductor component.

摘要翻译： 本发明涉及一种在东侧横向区域的半导体部件，其被提供以适应横向电场强度，由此半导体本体内和/或接近半导体本体表面的区域至少在其上的区域具有 横向三维结构在半导体主体中具有垂直凹槽，其中存在比半导体本体在凹部之间的间隔小的电导体，以及制造和使用半导体部件的方法。