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13 条记录 (耗时 0.021 秒)

    Gate turn-off thyristor construction
    3.
    发明授权
    Gate turn-off thyristor construction 失效
    门极关断晶闸管结构

    公开(公告)号：US4618781A

    公开(公告)日：1986-10-21

    申请号：US246019

    申请日：1981-03-20

    申请人： Dieter Silber ,  Friedhelm Sawitzki ,  Kurt Roy

    发明人： Dieter Silber ,  Friedhelm Sawitzki ,  Kurt Roy

    IPC分类号： H01L29/74 ,  H01L29/744 ,  H03K17/60

    CPC分类号： H01L29/744 ,  H01L29/7408 ,  H01L29/7412

    摘要： A gate turn-off thyristor comprising, a first emitter layer of one conductivity type, a main base layer of another conductivity type connected to said first emitter layer and a control base layer of the first conductivity type connected to the main base layer. A second emitter of the other conductivity type is connected to the control base layer at a junction which surrounds a portion of the second emitter layer. An emitter contact is connected to the second emitter layer and a control base contact is connected to the control base layer. The gate turn-off thyristor is turned off by a short circuiting of the control base contact with the emitter contact. The surface resistance of the control base layer between the second emitter layer and the control base contact is selected so that, with a control base turn-off current applied which is sufficient for turning off the thyristor, a potential appears on a lateral resistance in the control base layer which is less than a potential appearing at the junction. This difference in potential is used as an additional driving potential for the hole or electron current flowing over the lateral resistance and the control base layer.

    摘要翻译： 一种栅极截止晶闸管，包括：一个导电类型的第一发射极层，连接到所述第一发射极层的另一导电类型的主基极层和连接到主基极层的第一导电类型的控制基极层。 另一导电类型的第二发射极在围绕第二发射极层的一部分的结处连接到控制基极层。 发射极触点连接到第二发射极层，并且控制基极触点连接到控制基极层。 栅极关断晶闸管由于与发射极触点的控制基极接触短路而被关断。 选择第二发射极层和控制基极触点之间的控制基极层的表面电阻，使得施加足以关断晶闸管的控制基极截止电流，在侧向电阻中出现电位 控制基层小于出现在接合处的电位。 这种电位差被用作流过横向电阻和控制基极层的空穴或电子电流的附加驱动电位。

    Semiconductor component and method of producing it
    4.
    发明授权
    Semiconductor component and method of producing it 失效
    半导体元件及其制造方法

    公开(公告)号：US06734520B2

    公开(公告)日：2004-05-11

    申请号：US09861427

    申请日：2001-05-18

    申请人： Holger Kapels ,  Dieter Silber ,  Robert Plikat

    发明人： Holger Kapels ,  Dieter Silber ,  Robert Plikat

    IPC分类号： H01L27095

    CPC分类号： H01L29/7811 ,  H01L29/0649 ,  H01L29/0653 ,  H01L29/408 ,  H01L29/7802

    摘要： A semiconductor component includes a first layer and at least one adjacent semiconductor layer or metallic layer, which forms a rectifying junction with the first layer. Further semiconductor layers and metallic layers are provided for contacting the component. Insulating or semi-insulating structures are introduced into the first layer in a plane parallel to the rectifying junction. These structures are shaped like dishes with their edges bent up towards the rectifying junction. A method of producing such a semiconductor component is also provided.

    摘要翻译： 半导体部件包括第一层和与第一层形成整流结的至少一个相邻的半导体层或金属层。 提供了进一步的半导体层和金属层用于使部件接触。 绝缘或半绝缘结构在平行于整流结的平面中引入第一层。 这些结构的形状像碟子一样弯曲，朝向整流结。 还提供了一种制造这种半导体部件的方法。

    Interference-potential-compensated thyristor comprising at least four zones of different type of conductivity
    5.
    发明授权
    Interference-potential-compensated thyristor comprising at least four zones of different type of conductivity 失效
    干扰电位补偿晶闸管包括至少四个不同导电类型的区域

    公开(公告)号：US4282542A

    公开(公告)日：1981-08-04

    申请号：US81805

    申请日：1979-12-04

    申请人： Dieter Silber ,  Marius Fullmann ,  Wolfgang Winter

    发明人： Dieter Silber ,  Marius Fullmann ,  Wolfgang Winter

    IPC分类号： H01L29/74 ,  H01L31/111

    CPC分类号： H01L31/1113 ,  H01L29/7428

    摘要： An interference-potential-compensated thyristor comprising, a common emitter zone of one conductivity type, a common main base zone of an opposite conductivity type in contact with said common emitter zone, a common control base of said one conductivity type in contact with said common main base, first and second outer emitter zones of said opposite conductivity type in contact with said common control base, a common metallized electrode layer in contact with said common emitter zone, a first opposite metallized electrode layer in contact with a portion of said common control base and said first outer emitter zone at a junction between said common control base and said first outer emitter zone, and a second opposite metallized electrode layer in contact with a portion of said common control base and said second outer emitter zone at a junction between said common control base and said second outer emitter zone, said first outer emitter zone defining a pilot thyristor part thereabout and said second outer emitter zone defining a sequential thyristor thereabout, a geometry of said first and second outer emitter zones and said first and second opposite metallized electrode layers being chosen so that a capacitance resulting from a forward blocking p-n junction and the surface resistance of said common control base result in a potential which compensates and which approximately corresponds to a maximum interference potential occurring in said common control base beneath said first outer emitter zone, and with an optical or electrical triggering, a potential develops in said common control base adjacent said portion of said first outer emitter zone in contact with said first opposite metallized electrode layer which is substantially lower than the maximum turn-on potential produced in the common control base beneath said first outer emitter zone.

    摘要翻译： 一种干涉电位补偿晶闸管，包括：一个导电类型的公共发射极区，与所述共发射极区接触的相反导电类型的公共主基区，与所述公共接触的所述一导电类型的公共控制基极 主基座，与所述公共控制基座接触的所述相反导电类型的第一和第二外部发射极区域，与所述公共发射极区域接触的公共金属化电极层，与所述公共控制部分的一部分接触的第一相对的金属化电极层 在所述公共控制基极和所述第一外部发射极区域之间的接合处的所述第一外部发射极区域和与所述公共控制基极和所述第一外部发射极区域之间的接合处的所述公共控制基极和所述第二外部发射极区域的一部分接触的第二相对的金属化电极层 公共控制基极和所述第二外部发射极区域，所述第一外部发射极区域在其周围限定引导可控硅部件 d所述第二外部发射极区限定在其周围的顺序晶闸管，所述第一和第二外部发射极区的几何形状以及所述第一和第二相对的金属化电极层被选择为使得由正向阻挡pn结产生的电容和所述第一和第二外部发射极的表面电阻 公共控制基底导致补偿的电位，并且其大致对应于在所述第一外部发射极区域下方的所述公共控制基底中出现的最大干扰电位，并且随着光学或电气触发，在所述公共控制基座中邻近所述部分产生电位 所述第一外部发射极区域与所述第一相对的金属化电极层接触，所述第一相对的金属化电极层基本上低于在所述第一外部发射极区域下面的公共控制基底中产生的最大导通电位。

    High-voltage semiconductor component, method for the production and use thereof
    6.
    发明授权
    High-voltage semiconductor component, method for the production and use thereof 有权
    高压半导体元件及其制造方法

    公开(公告)号：US06495864B1

    公开(公告)日：2002-12-17

    申请号：US09700357

    申请日：2001-01-11

    申请人： Dieter Silber ,  Wolfgang Wondrak ,  Robert Plikat

    发明人： Dieter Silber ,  Wolfgang Wondrak ,  Robert Plikat

    IPC分类号： H01L2974

    CPC分类号： H01L29/408 ,  H01L21/7624 ,  H01L29/7394 ,  H01L29/7436 ,  H01L29/861 ,  H01L29/868

    摘要： The invention concerns a semiconductor component with at east one lateral region which is provided to accommodate a lateral electric field strength, whereby the semiconductor body within the body and/or in regions proximal to the surface of the semiconductor body at least over regions thereof has a lateral three-dimensional structure which has vertical recesses in the semiconductor body within which there are electrical conductors which are smaller than in the intervening spaces of the semiconductor body between the recesses, as well as a method for making and of using the semiconductor component.

    摘要翻译： 本发明涉及一种在东侧横向区域的半导体部件，其被提供以适应横向电场强度，由此半导体本体内和/或接近半导体本体表面的区域至少在其上的区域具有 横向三维结构在半导体主体中具有垂直凹槽，其中存在比半导体本体在凹部之间的间隔小的电导体，以及制造和使用半导体部件的方法。

    Light fired thyristor with faulty firing protection
    8.
    发明授权
    Light fired thyristor with faulty firing protection 失效
    闪光晶闸管故障点火保护

    公开(公告)号：US4122480A

    公开(公告)日：1978-10-24

    申请号：US738363

    申请日：1976-11-03

    申请人： Dieter Silber ,  Karl-Julius Finck ,  Marius Fullmann ,  Wolfgang Winter

    发明人： Dieter Silber ,  Karl-Julius Finck ,  Marius Fullmann ,  Wolfgang Winter

    IPC分类号： H01L31/111 ,  H01L29/74

    CPC分类号： H01L31/1113

    摘要： A light fired thyristor including a semiconductor body having four zones of alternatingly opposite conductivity types constituting a first or cathode emitter zone, a control base zone adjacent thereto, a main base zone and a second or anode emitter zone with the cathode emitter zone being formed within the control base zone at one major surface of the semiconductor body and being divided into a plurality of separate regions of which one serves as the firing region of the first emitter zone to fire the thyristor in response to impinging radiation energy. The firing region of the first emitter zone is provided in part with a first ohmic contact which is ohmically connected to a further ohmic contact connected to the control base region adjacent the edge of the semiconductor body. The remaining regions of the first emitter zone are provided with a cathode contact which simultaneously contacts the portions of the control base zone between these regions and forms short circuits with the control base zone. Consequently with interfering currents which are approximately uniformly distributed over the thyristor area, an increase in potential is produced in the firing region of the first emitter zone which increase is in the same direction as the increase in potential in the firing region of the control base zone and the likelihood of a faulty firing of the thyristor is reduced.

    摘要翻译： 一种点燃晶闸管，包括具有构成第一或阴极发射区的交替相反导电类型的四个区域的半导体本体，与其相邻的控制基区，主基极区和具有阴极发射区的第二或阳极发射区， 所述控制基区在所述半导体主体的一个主表面处，并且被分成多个分开的区域，其中一个区域用作所述第一发射区的点火区域，以响应于入射辐射能而触发所述晶闸管。 第一发射区的发射区域部分地设置有第一欧姆接触，欧姆接触与连接到与半导体本体的边缘相邻的控制基极区域的另一欧姆接触欧姆连接。 第一发射区的剩余区域设置有阴极接触件，其同时接触这些区域之间的控制基区的部分并且与控制基区形成短路。 因此，由于大致均匀地分布在晶闸管区域上的干扰电流，在第一发射区的点火区域产生增加的电位，该增加与控制基区的烧制区域中的电位增加方向相同 并且晶闸管发生故障的可能性降低。

    Insulated gate bipolar transistor having a coupling element
    9.
    发明授权
    Insulated gate bipolar transistor having a coupling element 失效
    具有耦合元件的绝缘栅双极晶体管

    公开(公告)号：US5710444A

    公开(公告)日：1998-01-20

    申请号：US448505

    申请日：1995-06-08

    申请人： Horst Neubrand ,  Jacek Korec ,  Dieter Silber

    发明人： Horst Neubrand ,  Jacek Korec ,  Dieter Silber

    IPC分类号： H01L29/78 ,  H01L29/10 ,  H01L29/739 ,  H01L29/786 ,  H01L29/72

    CPC分类号： H01L29/1095 ,  H01L29/7394

    摘要： The invention concerns a field-effect controlled semiconductor component with at least four regions of alternating opposite performance types: an anode-side emitter region, a first and a second base region connected to the emitter region, and a cathode-side emitter region; the cathode-side emitter region and the first base region from the source and drain of an MOS field effect transistor. The component also comprises an anode contact, a contact at the cathode-side emitter region and a control electrode contact of the MOS field effect transistor. The invention lies in the fact that a p+ region (36) which is adjacent to the cathode-side base region, separate, and accomodated in the anode-side n- base region (20), is connected via a separate component as a coupling element (80) with non-linear current/voltage characteristics to the cathode contact, the said region (36) being directly surrounded by the anode-side base region (20). When the field effect transistor is switched off the electrical potential in the area surrounding the supplementary p+ region (36) will exceed the threshold voltage of the coupling element, so that the supplementary p+ region (36) acts as a current sink by which the hole current can drain off against low resistance. A parasitic thyristor function is thus avoided.

    摘要翻译： PCT No.PCT / EP93 / 03688 371日期：1995年6月8日 102（e）日期1995年6月8日PCT 1993年12月24日PCT公布。 公开号WO94 / 15365 日期：1994年7月7日本发明涉及具有交替相反性能类型的至少四个区域的场效应控制半导体部件：阳极侧发射极区域，连接到发射极区域的第一和第二基极区域， 侧发射区; 阴极侧发射极区域和来自MOS场效应晶体管的源极和漏极的第一基极区域。 该部件还包括阳极接触，阴极侧发射区的接触和MOS场效应晶体管的控制电极接触。 本发明的目的在于，与阳极侧基极区域相邻的p +区域（36）分离并容纳在阳极侧正极基极区域（20）中，经由单独的部件作为耦合 元件（80）对阴极接触具有非线性电流/电压特性，所述区域（36）被阳极侧基极区域（20）直接包围。 当场效应晶体管截止时，辅助p +区域（36）周围的区域中的电位将超过耦合元件的阈值电压，使得辅助p +区域（36）用作电流阱，通过该电流阱 电流可以消除低电阻。 因此避免了寄生晶闸管功能。

    Light controlled triac with lateral thyristor firing complementary main thyristor section
    10.
    发明授权
    Light controlled triac with lateral thyristor firing complementary main thyristor section 失效
    具有横向晶闸管的光控三端双向可控硅开关互补主晶闸管部分

    公开(公告)号：US4613884A

    公开(公告)日：1986-09-23

    申请号：US547095

    申请日：1983-10-31

    申请人： Jorg Angerstein ,  Dieter Silber

    发明人： Jorg Angerstein ,  Dieter Silber

    IPC分类号： H01L27/144 ,  H01L29/74 ,  H01L29/747 ,  H01L31/111 ,  H03K17/79

    CPC分类号： H03K17/79 ,  H01L27/1443 ,  H01L29/7428 ,  H01L29/747 ,  H01L31/1113

    摘要： The invention relates to a controllable semiconductor circuit element consisting of a vertical thyristor comprised of four zones of alternating conductivity types and arranged in a semiconductor disk, with the two load current connections located on the top surface and on the bottom surface of the semiconductor disk respectively. According to the invention, the semiconductor disk comprises an additional controllable circuit element with a lateral zone structure on the top surface of the semiconductor disk. Zones of this additional circuit element are linked with zones of the vertical thyristor in such a way as to enable the vertical thyristor to be indirectly ignited by ignition of the lateral circuit element.

    摘要翻译： 本发明涉及一种可控半导体电路元件，它由一个由四个交替导电类型的区域构成的垂直晶闸管组成，并布置在半导体盘中，两个负载电流连接分别位于半导体盘的顶表面和底表面上 。 根据本发明，半导体盘包括在半导体盘的顶表面上具有横向区结构的附加可控电路元件。 该附加电路元件的区域与垂直晶闸管的区域连接，使得垂直晶闸管能够通过侧向电路元件的点火被间接点燃。