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1.发明授权公开(公告)号：US07787101B2
公开(公告)日：2010-08-31
申请号：US11307669
申请日：2006-02-16
IPC分类号： G03B27/52
CPC分类号： G03F7/70341 , G03F7/707
摘要： An apparatus for reducing contamination in immersion lithography includes a wafer chuck assembly including a wafer chuck configured to hold a semiconductor wafer on a support surface thereof. An O-ring assembly has a deformable O-ring attached to movable support sections arranged in a generally circular configuration so as to surround the wafer.
摘要翻译： 一种用于减少浸没式光刻中的污染的装置包括晶片卡盘组件，其包括构造成将半导体晶片保持在其支撑表面上的晶片卡盘。 O形环组件具有可变形的O形环，其可连接到以大致圆形构造布置的可移动支撑部分，以便围绕晶片。
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2.发明授权公开(公告)号：US07446859B2
公开(公告)日：2008-11-04
申请号：US11307230
申请日：2006-01-27
CPC分类号： G03D3/02 , G03F7/70341 , G03F7/70716 , G03F7/70916 , H01L21/68735
摘要： An apparatus for reducing contamination in immersion lithography includes a wafer chuck assembly having a wafer chuck configured to hold a semiconductor wafer on a support surface thereof. The wafer chuck has a gap therein, the gap located adjacent an outer edge of the wafer, and the gap containing a volume of immersion lithography fluid therein. A fluid circulation path is configured within the wafer chuck so as to facilitate the radial outward movement of the immersion lithography fluid in the gap, thereby maintaining a meniscus of the immersion lithography fluid at a selected height with respect to a top surface of the semiconductor wafer.
摘要翻译： 一种用于减少浸没式光刻中的污染的装置包括晶片卡盘组件，其具有构造成将半导体晶片保持在其支撑表面上的晶片卡盘。 晶片卡盘在其中具有间隙，间隙位于晶片的外边缘附近，并且该间隙包含一定量的浸没光刻流体。 流体循环路径被配置在晶片卡盘内，以便于浸没式光刻流体在间隙中的径向向外移动，从而将浸没式光刻流体的弯月面相对于半导体晶片的顶表面保持在选定的高度 。
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公开(公告)号：US07869002B2
公开(公告)日：2011-01-11
申请号：US12182282
申请日：2008-07-30
IPC分类号： G03B27/58
CPC分类号： G03D3/02 , G03F7/70341 , G03F7/70716 , G03F7/70916 , H01L21/68735
摘要： A method for reducing contamination in immersion lithography includes retaining a semiconductor wafer on a support surface of a wafer chuck, the wafer chuck having a gap therein, the gap located adjacent an outer edge of the wafer, and the gap containing a volume of immersion lithography fluid therein; and providing a fluid circulation path within the wafer chuck so as to facilitate the radial outward movement of the immersion lithography fluid in the gap, thereby maintaining a meniscus of the immersion lithography fluid at a selected height with respect to a top surface of the semiconductor wafer.
摘要翻译： 一种用于减少浸没式光刻中的污染的方法，包括将半导体晶片保持在晶片卡盘的支撑表面上，晶片卡盘在其中具有间隙，位于晶片的外边缘附近的间隙，以及包含一定量的浸没光刻 流体; 并且在晶片卡盘内提供流体循环路径，以便于浸没式光刻流体在间隙中的径向向外移动，从而将浸没式光刻流体的弯月面相对于半导体晶片的顶表面保持在选定的高度 。
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公开(公告)号：US07782445B2
公开(公告)日：2010-08-24
申请号：US12182278
申请日：2008-07-30
IPC分类号： G03B27/58
CPC分类号： G03D3/02 , G03F7/70341 , G03F7/70716 , G03F7/70916 , H01L21/68735
摘要： A wafer chuck assembly includes a first chuck section configured to hold a semiconductor wafer on a support surface thereof, and a second chuck section removably attached to the first chuck section. The first chuck section has a gap therein, the gap located adjacent an outer edge of the wafer, and the gap containing a volume of immersion lithography fluid therein. A fluid circulation path is configured within the first chuck section so as to facilitate the radial outward movement of the immersion lithography fluid in the gap, thereby maintaining a meniscus of the immersion lithography fluid at a selected height with respect to a top surface of the semiconductor wafer.
摘要翻译： 晶片卡盘组件包括配置成将半导体晶片保持在其支撑表面上的第一卡盘部分和可移除地附接到第一卡盘部分的第二卡盘部分。 第一卡盘部分在其中具有间隙，间隙位于晶片的外边缘附近，并且间隙包含一定量的浸没光刻流体。 流体循环路径被构造在第一卡盘部分内，以便于浸没式光刻流体在间隙中的径向向外移动，从而将浸没式光刻流体的弯液面保持在相对于半导体的顶表面的选定高度 晶圆。
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公开(公告)号：US20080284994A1
公开(公告)日：2008-11-20
申请号：US12182282
申请日：2008-07-30
IPC分类号： G03B27/52
CPC分类号： G03D3/02 , G03F7/70341 , G03F7/70716 , G03F7/70916 , H01L21/68735
摘要： A method for reducing contamination in immersion lithography includes retaining a semiconductor wafer on a support surface of a wafer chuck, the wafer chuck having a gap therein, the gap located adjacent an outer edge of the wafer, and the gap containing a volume of immersion lithography fluid therein; and providing a fluid circulation path within the wafer chuck so as to facilitate the radial outward movement of the immersion lithography fluid in the gap, thereby maintaining a meniscus of the immersion lithography fluid at a selected height with respect to a top surface of the semiconductor wafer.
摘要翻译： 一种用于减少浸没式光刻中的污染的方法，包括将半导体晶片保持在晶片卡盘的支撑表面上，晶片卡盘在其中具有间隙，位于晶片的外边缘附近的间隙，以及包含一定量的浸没光刻 流体; 并且在晶片卡盘内提供流体循环路径，以便于浸没式光刻流体在间隙中的径向向外移动，从而将浸没式光刻流体的弯月面相对于半导体晶片的顶表面保持在选定的高度 。
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公开(公告)号：US20080284993A1
公开(公告)日：2008-11-20
申请号：US12182278
申请日：2008-07-30
IPC分类号： G03B27/52
CPC分类号： G03D3/02 , G03F7/70341 , G03F7/70716 , G03F7/70916 , H01L21/68735
摘要： A wafer chuck assembly includes a first chuck section configured to hold a semiconductor wafer on a support surface thereof, and a second chuck section removably attached to the first chuck section. The first chuck section has a gap therein, the gap located adjacent an outer edge of the wafer, and the gap containing a volume of immersion lithography fluid therein. A fluid circulation path is configured within the first chuck section so as to facilitate the radial outward movement of the immersion lithography fluid in the gap, thereby maintaining a meniscus of the immersion lithography fluid at a selected height with respect to a top surface of the semiconductor wafer.
摘要翻译： 晶片卡盘组件包括配置成将半导体晶片保持在其支撑表面上的第一卡盘部分和可移除地附接到第一卡盘部分的第二卡盘部分。 第一卡盘部分在其中具有间隙，间隙位于晶片的外边缘附近，并且间隙包含一定量的浸没光刻流体。 流体循环路径被构造在第一卡盘部分内，以便于浸没式光刻流体在间隙中的径向向外移动，从而将浸没式光刻流体的弯液面保持在相对于半导体的顶表面的选定高度 晶圆。
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7.发明申请公开(公告)号：US20070177124A1
公开(公告)日：2007-08-02
申请号：US11307230
申请日：2006-01-27
申请人： Dmitriy Shneyder , Raschid Bezama , Dario Goldfarb , Kafai Lai
发明人： Dmitriy Shneyder , Raschid Bezama , Dario Goldfarb , Kafai Lai
IPC分类号： G03B27/62
CPC分类号： G03D3/02 , G03F7/70341 , G03F7/70716 , G03F7/70916 , H01L21/68735
摘要： An apparatus for reducing contamination in immersion lithography includes a wafer chuck assembly having a wafer chuck configured to hold a semiconductor wafer on a support surface thereof. The wafer chuck has a gap therein, the gap located adjacent an outer edge of the wafer, and the gap containing a volume of immersion lithography fluid therein. A fluid circulation path is configured within the wafer chuck so as to facilitate the radial outward movement of the immersion lithography fluid in the gap, thereby maintaining a meniscus of the immersion lithography fluid at a selected height with respect to a top surface of the semiconductor wafer.
摘要翻译： 一种用于减少浸没式光刻中的污染的装置包括晶片卡盘组件，其具有构造成将半导体晶片保持在其支撑表面上的晶片卡盘。 晶片卡盘在其中具有间隙，间隙位于晶片的外边缘附近，并且该间隙包含一定量的浸没光刻流体。 流体循环路径被配置在晶片卡盘内，以便于浸没式光刻流体在间隙中的径向向外移动，从而将浸没式光刻流体的弯月面相对于半导体晶片的顶表面保持在选定的高度 。
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8.发明申请公开(公告)号：US20070188731A1
公开(公告)日：2007-08-16
申请号：US11307669
申请日：2006-02-16
申请人： Raschid Bezama , Dario Goldfarb , Kafai Lai , Xiao Liu , Dmitriy Shneyder
发明人： Raschid Bezama , Dario Goldfarb , Kafai Lai , Xiao Liu , Dmitriy Shneyder
IPC分类号： G03B27/58
CPC分类号： G03F7/70341 , G03F7/707
摘要： An apparatus for reducing contamination in immersion lithography includes a wafer chuck assembly including a wafer chuck configured to hold a semiconductor wafer on a support surface thereof. An O-ring assembly has a deformable O-ring attached to movable support sections arranged in a generally circular configuration so as to surround the wafer.
摘要翻译： 一种用于减少浸没式光刻中的污染的装置包括晶片卡盘组件，其包括构造成将半导体晶片保持在其支撑表面上的晶片卡盘。 O形环组件具有可变形的O形环，其可连接到以大致圆形构造布置的可移动支撑部分，以便围绕晶片。
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公开(公告)号：US20110166683A1
公开(公告)日：2011-07-07
申请号：US12683454
申请日：2010-01-07
IPC分类号： G06F17/00
CPC分类号： G05B19/41865 , G05B2219/32293 , Y02P90/20 , Y02P90/86
摘要： A method identifies a real time downstream to processing capability within a production environment using a computerized device. The processing sequences perform operations utilizing one or more tools. The method also determines if an upstream tool capacity is greater than a downstream tool capacity. When the upstream tool capacity is greater than the downstream tool capacity the method calculates an overlap value. The method then adjusts the run rate for the upstream tool to by dividing the run rate of the upstream tool by the overlap value. The method is a centralized system that references tool processing parameters to determine processing capability. In the cases where the upstream tool has a significantly shorter processing time than the downstream tool, the system is used to determine if value should be added at the upstream tool to avoid WIP build up at the downstream tool.
摘要翻译： 一种方法使用计算机化设备在生产环境中识别处理能力的下游实时。 处理顺序使用一个或多个工具执行操作。 该方法还确定上游工具容量是否大于下游工具容量。 当上游工具容量大于下游工具容量时，该方法计算重叠值。 然后，该方法通过将上游工具的运行速率除以重叠值来调整上游工具的运行速率。 该方法是一个集中系统，它引用工具处理参数来确定处理能力。 在上游工具比下游工具具有明显缩短的处理时间的情况下，系统用于确定是否应在上游工具添加值以避免在下游工具上生成WIP。
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公开(公告)号：US07807335B2
公开(公告)日：2010-10-05
申请号：US11144857
申请日：2005-06-03
申请人： Daniel A. Corliss , Dario Gil , Dario Leonardo Goldfarb , Steven John Holmes , David Vaclav Horak , Kurt Rudolf Kimmel , Karen Elizabeth Petrillo , Dmitriy Shneyder
发明人： Daniel A. Corliss , Dario Gil , Dario Leonardo Goldfarb , Steven John Holmes , David Vaclav Horak , Kurt Rudolf Kimmel , Karen Elizabeth Petrillo , Dmitriy Shneyder
IPC分类号： G03F7/26
CPC分类号： G03F7/2041 , G03F7/11 , Y10S430/162
摘要： A method of forming an image in a photoresist layer. The method includes, providing a substrate; forming the photoresist layer over the substrate; forming a contamination gettering topcoat layer over the photoresist layer, the contamination gettering topcoat layer including one or more polymers and one or more cation complexing agents; exposing the photoresist layer to actinic radiation through a photomask having opaque and clear regions, the opaque regions blocking the actinic radiation and the clear regions being transparent to the actinic radiation, the actinic radiation changing the chemical composition of regions of the photoresist layer exposed to the radiation forming exposed and unexposed regions in the photoresist layer; and removing either the exposed regions of the photoresist layer or the unexposed regions of the photoresist layer. The contamination gettering topcoat layer includes one or more polymers, one or more cation complexing agents and a casting solvent.
摘要翻译： 在光致抗蚀剂层中形成图像的方法。 该方法包括提供基板; 在衬底上形成光致抗蚀剂层; 在光致抗蚀剂层上形成污染吸气顶涂层，吸收顶涂层的污染物包括一种或多种聚合物和一种或多种阳离子络合剂; 将光致抗蚀剂层暴露于通过具有不透明和透明区域的光掩模的光化辐射，不透明区域阻挡光化辐射，透明区域对于光化辐射是透明的，光化辐射改变曝光于光致抗蚀剂层的光致抗蚀剂层的区域的化学组成 在光致抗蚀剂层中形成曝光和未曝光区域的辐射; 以及去除光致抗蚀剂层的曝光区域或光致抗蚀剂层的未曝光区域。 污染吸附顶涂层包括一种或多种聚合物，一种或多种阳离子络合剂和流延溶剂。
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