Immersion lithography contamination gettering layer
    3.
    发明申请
    Immersion lithography contamination gettering layer 失效
    浸没光刻污染吸气层

    公开(公告)号:US20060275706A1

    公开(公告)日:2006-12-07

    申请号:US11144857

    申请日:2005-06-03

    IPC分类号: G03F7/20

    摘要: A method of forming an image in a photoresist layer. The method includes, providing a substrate; forming the photoresist layer over the substrate; forming a contamination gettering topcoat layer over the photoresist layer, the contamination gettering topcoat layer including one or more polymers and one or more cation complexing agents; exposing the photoresist layer to actinic radiation through a photomask having opaque and clear regions, the opaque regions blocking the actinic radiation and the clear regions being transparent to the actinic radiation, the actinic radiation changing the chemical composition of regions of the photoresist layer exposed to the radiation forming exposed and unexposed regions in the photoresist layer; and removing either the exposed regions of the photoresist layer or the unexposed regions of the photoresist layer. The contamination gettering topcoat layer includes one or more polymers, one or more cation complexing agents and a casting solvent.

    摘要翻译: 在光致抗蚀剂层中形成图像的方法。 该方法包括提供基板; 在衬底上形成光致抗蚀剂层; 在光致抗蚀剂层上形成污染吸气顶涂层,吸收顶涂层的污染物包括一种或多种聚合物和一种或多种阳离子络合剂; 将光致抗蚀剂层暴露于通过具有不透明和透明区域的光掩模的光化辐射,不透明区域阻挡光化辐射,透明区域对于光化辐射是透明的,光化辐射改变曝光于光致抗蚀剂层的光致抗蚀剂层的区域的化学组成 在光致抗蚀剂层中形成曝光和未曝光区域的辐射; 以及去除光致抗蚀剂层的曝光区域或光致抗蚀剂层的未曝光区域。 污染吸附顶涂层包括一种或多种聚合物,一种或多种阳离子络合剂和流延溶剂。

    APPARATUS AND METHOD FOR REDUCING CONTAMINATION IN IMMERSION LITHOGRAPHY
    4.
    发明申请
    APPARATUS AND METHOD FOR REDUCING CONTAMINATION IN IMMERSION LITHOGRAPHY 失效
    用于减少渗透层析污染的装置和方法

    公开(公告)号:US20070177124A1

    公开(公告)日:2007-08-02

    申请号:US11307230

    申请日:2006-01-27

    IPC分类号: G03B27/62

    摘要: An apparatus for reducing contamination in immersion lithography includes a wafer chuck assembly having a wafer chuck configured to hold a semiconductor wafer on a support surface thereof. The wafer chuck has a gap therein, the gap located adjacent an outer edge of the wafer, and the gap containing a volume of immersion lithography fluid therein. A fluid circulation path is configured within the wafer chuck so as to facilitate the radial outward movement of the immersion lithography fluid in the gap, thereby maintaining a meniscus of the immersion lithography fluid at a selected height with respect to a top surface of the semiconductor wafer.

    摘要翻译: 一种用于减少浸没式光刻中的污染的装置包括晶片卡盘组件,其具有构造成将半导体晶片保持在其支撑表面上的晶片卡盘。 晶片卡盘在其中具有间隙,间隙位于晶片的外边缘附近,并且该间隙包含一定量的浸没光刻流体。 流体循环路径被配置在晶片卡盘内,以便于浸没式光刻流体在间隙中的径向向外移动,从而将浸没式光刻流体的弯月面相对于半导体晶片的顶表面保持在选定的高度 。

    Method for fabricating dual damascene structures
    5.
    发明申请
    Method for fabricating dual damascene structures 失效
    双镶嵌结构的制作方法

    公开(公告)号:US20070148598A1

    公开(公告)日:2007-06-28

    申请号:US11317089

    申请日:2005-12-24

    IPC分类号: G03F7/20

    CPC分类号: G03F7/094 G03F1/50

    摘要: A method for fabricating a dual damascene structure includes providing a multi-layer photoresist stack comprising a first photoresist layer and a second photoresist layer, wherein each photoresist layer has a distinct dose-to-clear value, exposing said photoresist stack to one or more predetermined patterns of light, and developing said photo-resist layers to form a multi-tiered structure in the photo-resist layers.

    摘要翻译: 一种用于制造双镶嵌结构的方法包括提供包括第一光致抗蚀剂层和第二光致抗蚀剂层的多层光致抗蚀剂层,其中每个光致抗蚀剂层具有不同的剂量至清除值,将所述光致抗蚀剂层暴露于一个或多个预定的 并且显影所述光致抗蚀剂层以在光致抗蚀剂层中形成多层结构。