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    Method for manufacturing a signal line, thin film transistor panel, and method for manufacturing the thin film transistor panel
    1.
    发明授权
    Method for manufacturing a signal line, thin film transistor panel, and method for manufacturing the thin film transistor panel 有权
    信号线的制造方法，薄膜晶体管面板，以及薄膜晶体管面板的制造方法

    公开(公告)号：US07811868B2

    公开(公告)日：2010-10-12

    申请号：US11932233

    申请日：2007-10-31

    申请人： Do-Hyun Kim ,  Won-Suk Shin ,  Chang-Oh Jeong ,  Hong-Sick Park ,  Eun-Guk Lee ,  Je-Hun Lee

    发明人： Do-Hyun Kim ,  Won-Suk Shin ,  Chang-Oh Jeong ,  Hong-Sick Park ,  Eun-Guk Lee ,  Je-Hun Lee

    IPC分类号： H01L21/768

    CPC分类号： H01L27/12 ,  H01L27/124 ,  H01L27/1288 ,  H01L29/458

    摘要： A method for manufacturing a thin film transistor array panel includes forming a gate line on a substrate; sequentially forming a gate insulating layer, a silicon layer, and a conductor layer including a lower layer and an upper layer on the gate line, forming a photoresist film, on the conductor layer, patterning the photoresist film to form a photoresist pattern including a first portion and a second portion having a greater thickness than the first portion, etching the upper layer and the lower layer by using the photoresist pattern as art etch mask, etching the silicon layer by using the photoresist pattern as an etch mask to form a semiconductor, removing the second portion of the photoresist pattern by using an etch back process, selectively wet-etching the upper layer of the conductor layer by using the photoresist pattern as an etch mask, dry-etching the lower layer of the conductor layer by using the photoresist pattern as an etch mask to form a data line and a drain electrode including remaining upper and lower layers, and forming a pixel electrode connected to the drain electrode.

    摘要翻译： 一种制造薄膜晶体管阵列面板的方法，包括在基板上形成栅极线; 在栅极线上顺序地形成栅极绝缘层，硅层和包括下层和上层的导体层，在导体层上形成光致抗蚀剂膜，图案化光致抗蚀剂膜以形成包括第一 部分和第二部分具有比第一部分更大的厚度，通过使用光致抗蚀剂图案作为蚀刻掩模蚀刻上层和下层，通过使用光致抗蚀剂图案作为蚀刻掩模来蚀刻硅层以形成半导体， 通过使用回蚀工艺去除光致抗蚀剂图案的第二部分，通过使用光致抗蚀剂图案作为蚀刻掩模来选择性地湿法蚀刻导体层的上层，通过使用光致抗蚀剂干蚀刻导体层的下层 图案作为蚀刻掩模以形成包括剩余的上层和下层的数据线和漏极，并且形成连接到漏电极的像素电极 。

    METHOD FOR MANUFACTURING A SIGNAL LINE, THIN FILM TRANSISTOR PANEL, AND METHOD FOR MANUFACTURING THE THIN FILM TRANSISTOR PANEL
    2.
    发明申请
    METHOD FOR MANUFACTURING A SIGNAL LINE, THIN FILM TRANSISTOR PANEL, AND METHOD FOR MANUFACTURING THE THIN FILM TRANSISTOR PANEL 有权
    用于制造信号线，薄膜晶体管板的方法和制造薄膜晶体管板的方法

    公开(公告)号：US20080203390A1

    公开(公告)日：2008-08-28

    申请号：US11932233

    申请日：2007-10-31

    申请人： Do-Hyun Kim ,  Won-Suk Shin ,  Chang-Oh Jeong ,  Hong-Sick Park ,  Eun-Guk Lee ,  Je-Hun Lee

    发明人： Do-Hyun Kim ,  Won-Suk Shin ,  Chang-Oh Jeong ,  Hong-Sick Park ,  Eun-Guk Lee ,  Je-Hun Lee

    IPC分类号： H01L29/49 ,  H01L21/44 ,  H01L21/84

    CPC分类号： H01L27/12 ,  H01L27/124 ,  H01L27/1288 ,  H01L29/458

    摘要： A method for manufacturing a thin film transistor array panel includes forming a gate line on a substrate; sequentially forming a gate insulating layer, a silicon layer, and a conductor layer including a lower layer and an upper layer on the gate line, forming a photoresist film, on the conductor layer, patterning the photoresist film to form a photoresist pattern including a first portion and a second portion having a greater thickness than the first portion, etching the upper layer and the lower layer by using the photoresist pattern as art etch mask, etching the silicon layer by using the photoresist pattern as an etch mask to form a semiconductor, removing the second portion of the photoresist pattern by using an etch back process, selectively wet-etching the upper layer of the conductor layer by using the photoresist pattern as an etch mask, dry-etching the lower layer of the conductor layer by using the photoresist pattern as an etch mask to form a data line and a drain electrode including remaining upper and lower layers, and forming a pixel electrode connected to the drain electrode.

    摘要翻译： 一种制造薄膜晶体管阵列面板的方法，包括在基板上形成栅极线; 在栅极线上顺序地形成栅极绝缘层，硅层和包括下层和上层的导体层，在导体层上形成光致抗蚀剂膜，图案化光致抗蚀剂膜以形成包括第一 部分和第二部分具有比第一部分更大的厚度，通过使用光致抗蚀剂图案作为蚀刻掩模蚀刻上层和下层，通过使用光致抗蚀剂图案作为蚀刻掩模来蚀刻硅层以形成半导体， 通过使用回蚀工艺去除光致抗蚀剂图案的第二部分，通过使用光致抗蚀剂图案作为蚀刻掩模来选择性地湿法蚀刻导体层的上层，通过使用光致抗蚀剂干蚀刻导体层的下层 图案作为蚀刻掩模以形成包括剩余的上层和下层的数据线和漏极，并且形成连接到漏电极的像素电极 。

    Display substrate
    4.
    发明授权
    Display substrate 有权
    显示基板

    公开(公告)号：US08044398B2

    公开(公告)日：2011-10-25

    申请号：US12331138

    申请日：2008-12-09

    申请人： Hong-Long Ning ,  Chang-Oh Jeong ,  Je-Hun Lee ,  Yang-Ho Bae ,  Pil-Sang Yun ,  Hong-Sick Park ,  Joo-Ae Youn ,  Byeong-Beom Kim ,  Byeong-Jin Lee

    发明人： Hong-Long Ning ,  Chang-Oh Jeong ,  Je-Hun Lee ,  Yang-Ho Bae ,  Pil-Sang Yun ,  Hong-Sick Park ,  Joo-Ae Youn ,  Byeong-Beom Kim ,  Byeong-Jin Lee

    IPC分类号： H01L29/04 ,  H01L29/15 ,  H01L27/01 ,  H01L27/12

    CPC分类号： G02F1/136286 ,  G02F2001/136295 ,  H01L27/124 ,  H01L29/41733 ,  H01L29/42384 ,  H01L29/4908

    摘要： A display substrate includes an insulating substrate, a thin-film transistor (TFT), a pixel electrode, a signal line and a pad part. The insulating substrate has a display region and a peripheral region surrounding the display region. The TFT is in the display region of the insulating substrate. The pixel electrode is in the display region of the insulating substrate and electrically connected to the TFT. The signal line is on the insulating substrate and extends from the peripheral region toward the display region. The pad part is in the peripheral region and electrically connects to the signal line. The pad part is formed in a trench of the insulating substrate and includes a region that extends into the insulating substrate. Therefore, the signal line may be securely attached to the insulating substrate.

    摘要翻译： 显示基板包括绝缘基板，薄膜晶体管（TFT），像素电极，信号线和焊盘部分。 绝缘基板具有显示区域和围绕显示区域的周边区域。 TFT位于绝缘基板的显示区域。 像素电极在绝缘基板的显示区域中并与TFT电连接。 信号线位于绝缘基板上，并从周边区域向显示区域延伸。 焊盘部分在外围区域中并且电连接到信号线。 衬垫部分形成在绝缘衬底的沟槽中，并且包括延伸到绝缘衬底中的区域。 因此，信号线可以牢固地附接到绝缘基板。

    DISPLAY SUBSTRATE
    5.
    发明申请
    DISPLAY SUBSTRATE 有权
    显示基板

    公开(公告)号：US20090179203A1

    公开(公告)日：2009-07-16

    申请号：US12331138

    申请日：2008-12-09

    申请人： Hong-Long Ning ,  Chang-Oh Jeong ,  Je-Hun Lee ,  Yang-Ho Bae ,  Pil-Sang Yun ,  Hong-Sick Park ,  Joo-Ae Youn ,  Byeong-Beom Kim ,  Byeong-Jin Lee

    发明人： Hong-Long Ning ,  Chang-Oh Jeong ,  Je-Hun Lee ,  Yang-Ho Bae ,  Pil-Sang Yun ,  Hong-Sick Park ,  Joo-Ae Youn ,  Byeong-Beom Kim ,  Byeong-Jin Lee

    IPC分类号： H01L33/00 ,  H01L21/768 ,  G03F1/00 ,  G03F7/20

    CPC分类号： G02F1/136286 ,  G02F2001/136295 ,  H01L27/124 ,  H01L29/41733 ,  H01L29/42384 ,  H01L29/4908

    摘要： A display substrate includes an insulating substrate, a thin-film transistor (TFT), a pixel electrode, a signal line and a pad part. The insulating substrate has a display region and a peripheral region surrounding the display region. The TFT is in the display region of the insulating substrate. The pixel electrode is in the display region of the insulating substrate and electrically connected to the TFT. The signal line is on the insulating substrate and extends from the peripheral region toward the display region. The pad part is in the peripheral region and electrically connects to the signal line. The pad part is formed in a trench of the insulating substrate and includes a region that extends into the insulating substrate. Therefore, the signal line may be securely attached to the insulating substrate.

    摘要翻译： 显示基板包括绝缘基板，薄膜晶体管（TFT），像素电极，信号线和焊盘部分。 绝缘基板具有显示区域和围绕显示区域的周边区域。 TFT位于绝缘基板的显示区域。 像素电极在绝缘基板的显示区域中并与TFT电连接。 信号线位于绝缘基板上，并从周边区域向显示区域延伸。 焊盘部分在外围区域中并且电连接到信号线。 衬垫部分形成在绝缘衬底的沟槽中，并且包括延伸到绝缘衬底中的区域。 因此，信号线可以牢固地附接到绝缘基板。

    Thin film transistor array panel and method of manufacture
    8.
    发明授权
    Thin film transistor array panel and method of manufacture 有权
    薄膜晶体管阵列面板及其制造方法

    公开(公告)号：US07776633B2

    公开(公告)日：2010-08-17

    申请号：US11696097

    申请日：2007-04-03

    申请人： Jong-Hyun Choung ,  Hong-Sick Park ,  Joo-Ae Yoon ,  Jeong-Min Park ,  Doo-Hee Jung ,  Sun-Young Hong ,  Bong-Kyun Kim ,  Won-Suk Shin ,  Byeong-Jin Lee

    发明人： Jong-Hyun Choung ,  Hong-Sick Park ,  Joo-Ae Yoon ,  Jeong-Min Park ,  Doo-Hee Jung ,  Sun-Young Hong ,  Bong-Kyun Kim ,  Won-Suk Shin ,  Byeong-Jin Lee

    IPC分类号： H01L21/00

    CPC分类号： H01L27/1288 ,  H01L27/1214

    摘要： A method of manufacturing a thin film transistor array panel, including: forming gate lines on a substrate; forming a gate insulating layer on the gate lines; forming semiconductor layers on the gate insulating layer; forming data lines and drain electrodes on the semiconductor layers; depositing a passivation layer on the data lines and the drain electrodes; forming a first photoresist layer including a first portion and a second portion that is thinner than the first portion on the passivation layer; forming a first preliminary contact hole exposing the data lines by etching the passivation layer by using the first photoresist layer as a mask; removing the second portion of the first photoresist; forming a first contact hole by expanding the first preliminary contact hole and opening portions by etching the passivation layer by using the first portion of the first photoresist layer as a mask; depositing a conductor layer; and forming pixel electrodes in the opening portions and a first contact assistant member in the first contact hole by removing the first photoresist layer and the conductor layer located thereon.

    摘要翻译： 一种制造薄膜晶体管阵列面板的方法，包括：在衬底上形成栅极线; 在栅极线上形成栅极绝缘层; 在所述栅极绝缘层上形成半导体层; 在半导体层上形成数据线和漏电极; 在数据线和漏电极上沉积钝化层; 形成第一光致抗蚀剂层，其包括比钝化层上的第一部分更薄的第一部分和第二部分; 通过使用第一光致抗蚀剂层作为掩模，形成通过蚀刻钝化层而暴露数据线的第一预接触孔; 去除第一光致抗蚀剂的第二部分; 通过使用第一光致抗蚀剂层的第一部分作为掩模，通过蚀刻钝化层来扩展第一预接触孔和开口部来形成第一接触孔; 沉积导体层; 以及通过去除位于其上的第一光致抗蚀剂层和导体层，在开口部分中形成像素电极和第一接触孔中的第一接触辅助部件。

    Method of manufacturing display substrate having improved contact with pixel electrode
    9.
    发明授权
    Method of manufacturing display substrate having improved contact with pixel electrode 失效
    具有改善与像素电极接触的显示基板的制造方法

    公开(公告)号：US07563656B2

    公开(公告)日：2009-07-21

    申请号：US11616542

    申请日：2006-12-27

    申请人： Jong-Hyun Choung ,  Hong-Sick Park ,  Joo-Ae Youn ,  Sun-Young Hong ,  Bong-Kyun Kim ,  Won-Suk Shin ,  Doo-Hee Jung ,  Byeong-Jin Lee

    发明人： Jong-Hyun Choung ,  Hong-Sick Park ,  Joo-Ae Youn ,  Sun-Young Hong ,  Bong-Kyun Kim ,  Won-Suk Shin ,  Doo-Hee Jung ,  Byeong-Jin Lee

    IPC分类号： H01L21/00 ,  H01L21/84

    CPC分类号： H01L27/124 ,  G02F1/136286 ,  G02F2001/136231 ,  H01L27/1288

    摘要： A display substrate includes an insulating substrate, a thin film transistor, a contact electrode, and a pixel electrode. The thin film transistor includes a control electrode, a semiconductor pattern, a first electrode, and a second electrode. The control electrode is on the insulating substrate. The semiconductor pattern is on the control electrode. The first electrode is on the semiconductor pattern. The second electrode is spaced apart from the first electrode on the semiconductor pattern. The contact electrode includes a contact portion and an undercut portion. The contact portion is electrically connected to the second electrode to partially expose the semiconductor pattern. The undercut portion is electrically connected to the contact portion to cover the semiconductor pattern. The pixel electrode is electrically connected to the second electrode through the contact portion of the contact electrode.

    摘要翻译： 显示基板包括绝缘基板，薄膜晶体管，接触电极和像素电极。 薄膜晶体管包括控制电极，半导体图案，第一电极和第二电极。 控制电极在绝缘基板上。 半导体图案在控制电极上。 第一电极位于半导体图案上。 第二电极与半导体图案上的第一电极间隔开。 接触电极包括接触部分和底切部分。 接触部分电连接到第二电极以部分地暴露半导体图案。 底切部分电连接到接触部分以覆盖半导体图案。 像素电极通过接触电极的接触部分电连接到第二电极。