摘要:
A method of manufacturing a contact plug in a semiconductor device is disclosed. In-situ thermal doping of an impurity such as phosphorous (P) during the process by which polysilicon for a contact plug is formed by selective growth method and after in-situ doping after the growth process is employed in order to increase the concentration of the impurity in the contact plug. As a result, the disclosed method can reduce the interfacial resistance at the plug to improve the electrical characteristics of a device of more than 1 G bits.
摘要:
A method of controlling a power control circuit includes enabling a power cutoff signal when a delay locking operation of a Delay Locked Loop (DLL) circuit is completed, disabling the power cutoff signal for a predetermined time, and detecting a phase difference between a reference clock and a feedback clock to re-determine, on the basis of the detection result, whether or not to enable the power cutoff signal.
摘要:
A duty cycle correction circuit includes a duty correction block configured to generate a first pre-corrected signal and a second pre-corrected signal in response to a duty code and an input signal; a duty-corrected signal generation block configured to generate a duty-corrected signal in response to a first select signal, a second select signal, the first pre-corrected signal and the second pre-corrected signal; and a control block configured to generate the duty code, the first select signal and the second select signal in response to the duty-corrected signal and the input signal.
摘要:
A power control circuit includes a check unit that receives a reference clock and generates a check signal for cyclically activating a feedback loop of a DLL circuit, a phase detecting unit that detects a phase difference between the reference clock and a feedback clock, and generates a phase difference detection signal, and a signal combining unit that generates a power cutoff signal in response to a locking completion signal, the check signal, and the phase difference detection signal.
摘要:
A circuit configured to correct a duty cycle includes a clock dividing unit configured to delay an input clock signal by a specified delay amount and to generate a plurality of delayed clock signals, a clock selection unit configured to output any one among the plurality of delayed clock signals as a selected delayed clock signal in response to duty ratio information of the input clock signal, an edge control unit configured to generate a falling clock signal by controlling a falling edge of the selected delayed clock signal and to generate a rising clock signal by controlling a falling edge of the input clock signal based on information regarding a difference between lengths of a high duration and a low duration of the input clock signal, and a phase mixing unit for mixing phases of the falling clock signal and the rising clock signal and generating an output clock signal.
摘要:
A circuit for correcting a duty cycle includes a duty ratio digital conversion block configured to output duty ratio information of an input clock signal as plural-bit digital signals, a duty ratio information analyzing block configured to analyze the duty ratio information of the input clock signal, generate edge control signals, and select any one of a plurality of delayed clock signals, and a duty ratio control block configured to control duty ratios of a selected delayed clock signal and the input clock signal in response to the edge control signals.
摘要:
A duty cycle correcting circuit includes a duty ratio control signal generating block that detects a duty ratio of input clock signals and generates a duty ratio control signal comprising a plurality of bits, a power supply block that supplies a voltage to output nodes, and a signal processing block that controls voltage levels of the output nodes to correspond to voltage levels of the input clock signals in response to the plurality of bits of duty ratio control signals.
摘要:
A method of fabricating a semiconductor device having the steps of forming an insulating layer on a silicon substrate; forming a contact hole in the insulating layer so that a portion of the silicon substrate is exposed in the contact hole; performing an interface treatment process to the exposed portion of the silicon substrate, wherein the interface treatment process includes at least a dry cleaning and a hydrogen heat treatment; and forming a selective silicon plug including single crystalline and polycrystalline silicon structures on the exposed portion of the silicon substrate.
摘要:
A clock generation circuit of a semiconductor apparatus includes a first phase detection block configured to compare initial phases of a reference clock signal and an output clock signal in response to an operation start signal, and output an initial phase difference detection signal corresponding to a comparison result; a second phase detection block configured to compare phases of the reference clock signal and the output clock signal, and output a phase detection signal corresponding to a comparison result; a variable unit delay block determined in a control range of the delay amount thereof in response to the initial phase difference detection signal, and configured to delay the reference clock signal by a delay amount corresponding to a voltage level of a control voltage and output the output clock signal; and a delay control block configured to generate the control voltage which has the voltage level corresponding to the phase detection signal.
摘要:
A synchronization circuit includes a first loop circuit configured to set an initial delay time by using first initial delay information and generate a first delay signal by changing a delay time of a first input signal, a second loop circuit configured to set the initial delay time by using second initial delay information and generate a second delay signal by changing a delay time of a second input signal, a duty cycle correction unit configured to correct a duty cycle of the first delay signal by using the second delay signal, and an initial delay monitoring circuit configured to generate the first initial delay information and the second initial delay information in response to an internal delay signal of the first loop circuit and the first input signal.