公开(公告)号：US20070045692A1

公开(公告)日：2007-03-01

申请号：US11511469

申请日：2006-08-29

申请人： Dong-Chul Kim ,  In-Gyu Baek ,  Young-Kwan Cha ,  Moon-Sook Lee ,  Sang-Jin Park

发明人： Dong-Chul Kim ,  In-Gyu Baek ,  Young-Kwan Cha ,  Moon-Sook Lee ,  Sang-Jin Park

IPC分类号： H01L29/94

CPC分类号： H01L45/04 ,  H01L27/2436 ,  H01L45/1233 ,  H01L45/1246 ,  H01L45/146 ,  H01L45/1633

摘要： Nonvolatile memory devices and methods of manufacturing the same are provided. The nonvolatile memory devices may include an oxide layer formed of a resistance conversion material, a lower electrode, a nano-wire layer formed of a transition metal on the lower electrode, and an upper electrode formed on the oxide layer. According to example embodiments, a reset current may be stabilized by unifying a current path on the oxide layer.

摘要翻译： 提供了非易失性存储器件及其制造方法。 非易失性存储器件可以包括由电阻转换材料，下电极，由下电极上的过渡金属形成的纳米线层和形成在氧化物层上的上电极形成的氧化物层。 根据示例性实施例，可以通过统一氧化物层上的电流路径来稳定复位电流。

公开(公告)号：US07446333B2

公开(公告)日：2008-11-04

申请号：US11511469

申请日：2006-08-29

申请人： Dong-Chul Kim ,  In-Gyu Baek ,  Young-Kwan Cha ,  Moon-Sook Lee ,  Sang-Jin Park

发明人： Dong-Chul Kim ,  In-Gyu Baek ,  Young-Kwan Cha ,  Moon-Sook Lee ,  Sang-Jin Park

IPC分类号： H01L29/04

CPC分类号： H01L45/04 ,  H01L27/2436 ,  H01L45/1233 ,  H01L45/1246 ,  H01L45/146 ,  H01L45/1633

摘要： Nonvolatile memory devices and methods of manufacturing the same are provided. The nonvolatile memory devices may include an oxide layer formed of a resistance conversion material, a lower electrode, a nano-wire layer formed of a transition metal on the lower electrode, and an upper electrode formed on the oxide layer. According to example embodiments, a reset current may be stabilized by unifying a current path on the oxide layer.

摘要翻译： 提供了非易失性存储器件及其制造方法。 非易失性存储器件可以包括由电阻转换材料，下电极，由下电极上的过渡金属形成的纳米线层和形成在氧化物层上的上电极形成的氧化物层。 根据示例性实施例，可以通过统一氧化物层上的电流路径来稳定复位电流。

公开(公告)号：US07639521B2

公开(公告)日：2009-12-29

申请号：US11378945

申请日：2006-03-17

申请人： In-Gyu Baek ,  Moon-Sook Lee ,  Dong-Chul Kim

发明人： In-Gyu Baek ,  Moon-Sook Lee ,  Dong-Chul Kim

IPC分类号： G11C11/00

CPC分类号： H01L45/04 ,  G11C11/161 ,  G11C11/1659 ,  G11C13/0007 ,  G11C2213/52 ,  H01L27/2409 ,  H01L27/2436 ,  H01L27/2472 ,  H01L27/2481 ,  H01L45/1233 ,  H01L45/146 ,  H01L45/147

摘要： A memory cell includes a plug-type first electrode in a substrate, a magneto-resistive memory element disposed on the first electrode, and a second electrode disposed on the magneto-resistive memory element opposite the first electrode. The second electrode has an area of overlap with the magneto-resistive memory element that is greater than an area of overlap of the first electrode and the magneto-resistive memory element. The first surface may, for example, be substantially circular and have a diameter less than a minimum planar dimension (e.g., width) of the second surface. The magneto-resistive memory element may include a colossal magneto-resistive material, such as an insulating material with a perovskite phase and/or a transition metal oxide.

摘要翻译： 存储单元包括衬底中的插塞式第一电极，设置在第一电极上的磁阻存储元件，以及设置在与第一电极相对的磁阻存储元件上的第二电极。 第二电极具有与磁阻存储元件重叠的区域，其大于第一电极和磁阻存储元件的重叠区域。 例如，第一表面可以是基本上圆形的并且具有小于第二表面的最小平面尺寸（例如，宽度）的直径。 磁阻存储元件可以包括巨磁阻材料，例如具有钙钛矿相和/或过渡金属氧化物的绝缘材料。

公开(公告)号：US20060215445A1

公开(公告)日：2006-09-28

申请号：US11378945

申请日：2006-03-17

申请人： In-Gyu Baek ,  Moon-Sook Lee ,  Dong-Chul Kim

发明人： In-Gyu Baek ,  Moon-Sook Lee ,  Dong-Chul Kim

IPC分类号： G11C11/00

CPC分类号： H01L45/04 ,  G11C11/161 ,  G11C11/1659 ,  G11C13/0007 ,  G11C2213/52 ,  H01L27/2409 ,  H01L27/2436 ,  H01L27/2472 ,  H01L27/2481 ,  H01L45/1233 ,  H01L45/146 ,  H01L45/147

摘要： A memory cell includes a plug-type first electrode in a substrate, a magneto-resistive memory element disposed on the first electrode, and a second electrode disposed on the magneto-resistive memory element opposite the first electrode. The second electrode has an area of overlap with the magneto-resistive memory element that is greater than an area of overlap of the first electrode and the magneto-resistive memory element. The first surface may, for example, be substantially circular and have a diameter less than a minimum planar dimension (e.g., width) of the second surface. The magneto-resistive memory element may include a colossal magneto-resistive material, such as an insulating material with a perovskite phase and/or a transition metal oxide.

摘要翻译： 存储单元包括衬底中的插塞式第一电极，设置在第一电极上的磁阻存储元件，以及设置在与第一电极相对的磁阻存储元件上的第二电极。 第二电极具有与磁阻存储元件重叠的区域，其大于第一电极和磁阻存储元件的重叠区域。 例如，第一表面可以是基本上圆形的并且具有小于第二表面的最小平面尺寸（例如，宽度）的直径。 磁阻存储元件可以包括巨磁阻材料，例如具有钙钛矿相和/或过渡金属氧化物的绝缘材料。

公开(公告)号：US20100044666A1

公开(公告)日：2010-02-25

申请号：US12612187

申请日：2009-11-04

申请人： In-Gyu Baek ,  Moon-Sook Lee ,  Dong-Chul Kim

发明人： In-Gyu Baek ,  Moon-Sook Lee ,  Dong-Chul Kim

IPC分类号： H01L47/00

CPC分类号： H01L45/04 ,  G11C11/161 ,  G11C11/1659 ,  G11C13/0007 ,  G11C2213/52 ,  H01L27/2409 ,  H01L27/2436 ,  H01L27/2472 ,  H01L27/2481 ,  H01L45/1233 ,  H01L45/146 ,  H01L45/147

摘要： A memory cell includes a plug-type first electrode in a substrate, a magneto-resistive memory element disposed on the first electrode, and a second electrode disposed on the magneto-resistive memory element opposite the first electrode. The second electrode has an area of overlap with the magneto-resistive memory element that is greater than an area of overlap of the first electrode and the magneto-resistive memory element. The first surface may, for example, be substantially circular and have a diameter less than a minimum planar dimension (e.g., width) of the second surface. The magneto-resistive memory element may include a colossal magneto-resistive material, such as an insulating material with a perovskite phase and/or a transition metal oxide.

摘要翻译： 存储单元包括衬底中的插塞式第一电极，设置在第一电极上的磁阻存储元件，以及设置在与第一电极相对的磁阻存储元件上的第二电极。 第二电极具有与磁阻存储元件重叠的区域，其大于第一电极和磁阻存储元件的重叠区域。 例如，第一表面可以是基本上圆形的并且具有小于第二表面的最小平面尺寸（例如，宽度）的直径。 磁阻存储元件可以包括巨磁阻材料，例如具有钙钛矿相和/或过渡金属氧化物的绝缘材料。

公开(公告)号：US08873274B2

公开(公告)日：2014-10-28

申请号：US13862918

申请日：2013-04-15

申请人： In-Gyu Baek ,  Moon-Sook Lee ,  Dong-Chul Kim

发明人： In-Gyu Baek ,  Moon-Sook Lee ,  Dong-Chul Kim

IPC分类号： G11C11/00

CPC分类号： H01L45/04 ,  G11C11/161 ,  G11C11/1659 ,  G11C13/0007 ,  G11C2213/52 ,  H01L27/2409 ,  H01L27/2436 ,  H01L27/2472 ,  H01L27/2481 ,  H01L45/1233 ,  H01L45/146 ,  H01L45/147

摘要： A memory cell includes a plug-type first electrode in a substrate, a magneto-resistive memory element disposed on the first electrode, and a second electrode disposed on the magneto-resistive memory element opposite the first electrode. The second electrode has an area of overlap with the magneto-resistive memory element that is greater than an area of overlap of the first electrode and the magneto-resistive memory element. The first surface may, for example, be substantially circular and have a diameter less than a minimum planar dimension (e.g., width) of the second surface. The magneto-resistive memory element may include a colossal magneto-resistive material, such as an insulating material with a perovskite phase and/or a transition metal oxide.

摘要翻译： 存储单元包括衬底中的插塞式第一电极，设置在第一电极上的磁阻存储元件，以及设置在与第一电极相对的磁阻存储元件上的第二电极。 第二电极具有与磁阻存储元件重叠的区域，其大于第一电极和磁阻存储元件的重叠区域。 例如，第一表面可以是基本上圆形的并且具有小于第二表面的最小平面尺寸（例如，宽度）的直径。 磁阻存储元件可以包括巨磁阻材料，例如具有钙钛矿相和/或过渡金属氧化物的绝缘材料。

公开(公告)号：US20130240826A1

公开(公告)日：2013-09-19

申请号：US13862918

申请日：2013-04-15

申请人： In-Gyu Baek ,  Moon-Sook Lee ,  Dong-Chul Kim

发明人： In-Gyu Baek ,  Moon-Sook Lee ,  Dong-Chul Kim

IPC分类号： H01L45/00

CPC分类号： H01L45/04 ,  G11C11/161 ,  G11C11/1659 ,  G11C13/0007 ,  G11C2213/52 ,  H01L27/2409 ,  H01L27/2436 ,  H01L27/2472 ,  H01L27/2481 ,  H01L45/1233 ,  H01L45/146 ,  H01L45/147

摘要： A memory cell includes a plug-type first electrode in a substrate, a magneto-resistive memory element disposed on the first electrode, and a second electrode disposed on the magneto-resistive memory element opposite the first electrode. The second electrode has an area of overlap with the magneto-resistive memory element that is greater than an area of overlap of the first electrode and the magneto-resistive memory element. The first surface may, for example, be substantially circular and have a diameter less than a minimum planar dimension (e.g., width) of the second surface. The magneto-resistive memory element may include a colossal magneto-resistive material, such as an insulating material with a perovskite phase and/or a transition metal oxide.

摘要翻译： 存储单元包括衬底中的插塞式第一电极，设置在第一电极上的磁阻存储元件，以及设置在与第一电极相对的磁阻存储元件上的第二电极。 第二电极具有与磁阻存储元件重叠的区域，其大于第一电极和磁阻存储元件的重叠区域。 例如，第一表面可以是基本上圆形的并且具有小于第二表面的最小平面尺寸（例如，宽度）的直径。 磁阻存储元件可以包括巨磁阻材料，例如具有钙钛矿相和/或过渡金属氧化物的绝缘材料。

公开(公告)号：US20110204314A1

公开(公告)日：2011-08-25

申请号：US13100702

申请日：2011-05-04

申请人： In-Gyu Baek ,  Moon-Sook Lee ,  Dong-Chul Kim

发明人： In-Gyu Baek ,  Moon-Sook Lee ,  Dong-Chul Kim

IPC分类号： H01L45/00

CPC分类号： H01L45/04 ,  G11C11/161 ,  G11C11/1659 ,  G11C13/0007 ,  G11C2213/52 ,  H01L27/2409 ,  H01L27/2436 ,  H01L27/2472 ,  H01L27/2481 ,  H01L45/1233 ,  H01L45/146 ,  H01L45/147

摘要： A memory cell includes a plug-type first electrode in a substrate, a magneto-resistive memory element disposed on the first electrode, and a second electrode disposed on the magneto-resistive memory element opposite the first electrode. The second electrode has an area of overlap with the magneto-resistive memory element that is greater than an area of overlap of the first electrode and the magneto-resistive memory element. The first surface may, for example, be substantially circular and have a diameter less than a minimum planar dimension (e.g., width) of the second surface. The magneto-resistive memory element may include a colossal magneto-resistive material, such as an insulating material with a perovskite phase and/or a transition metal oxide.

摘要翻译： 存储单元包括衬底中的插塞式第一电极，设置在第一电极上的磁阻存储元件，以及设置在与第一电极相对的磁阻存储元件上的第二电极。 第二电极具有与磁阻存储元件重叠的区域，其大于第一电极和磁阻存储元件的重叠区域。 例如，第一表面可以是基本上圆形的并且具有小于第二表面的最小平面尺寸（例如，宽度）的直径。 磁阻存储元件可以包括巨磁阻材料，例如具有钙钛矿相和/或过渡金属氧化物的绝缘材料。

公开(公告)号：US07961496B2

公开(公告)日：2011-06-14

申请号：US12612187

申请日：2009-11-04

申请人： In-Gyu Baek ,  Moon-Sook Lee ,  Dong-Chul Kim

发明人： In-Gyu Baek ,  Moon-Sook Lee ,  Dong-Chul Kim

IPC分类号： G11C11/00

CPC分类号： H01L45/04 ,  G11C11/161 ,  G11C11/1659 ,  G11C13/0007 ,  G11C2213/52 ,  H01L27/2409 ,  H01L27/2436 ,  H01L27/2472 ,  H01L27/2481 ,  H01L45/1233 ,  H01L45/146 ,  H01L45/147

摘要： A memory cell includes a plug-type first electrode in a substrate, a magneto-resistive memory element disposed on the first electrode, and a second electrode disposed on the magneto-resistive memory element opposite the first electrode. The second electrode has an area of overlap with the magneto-resistive memory element that is greater than an area of overlap of the first electrode and the magneto-resistive memory element. The first surface may, for example, be substantially circular and have a diameter less than a minimum planar dimension (e.g., width) of the second surface. The magneto-resistive memory element may include a colossal magneto-resistive material, such as an insulating material with a perovskite phase and/or a transition metal oxide.

摘要翻译： 存储单元包括衬底中的插塞式第一电极，设置在第一电极上的磁阻存储元件，以及设置在与第一电极相对的磁阻存储元件上的第二电极。 第二电极具有与磁阻存储元件重叠的区域，其大于第一电极和磁阻存储元件的重叠区域。 例如，第一表面可以是基本上圆形的并且具有小于第二表面的最小平面尺寸（例如，宽度）的直径。 磁阻存储元件可以包括巨磁阻材料，例如具有钙钛矿相和/或过渡金属氧化物的绝缘材料。

公开(公告)号：US07480174B2

公开(公告)日：2009-01-20

申请号：US11762483

申请日：2007-06-13

申请人： Moon-Sook Lee ,  In-Gyu Baek

发明人： Moon-Sook Lee ,  In-Gyu Baek

IPC分类号： G11C11/00

CPC分类号： G11C13/00 ,  H01L27/2436 ,  H01L45/04 ,  H01L45/1233 ,  H01L45/146 ,  H01L45/1625

摘要： A method of programming a non-volatile memory device including a transition metal oxide layer includes applying a first electric pulse to the transition metal oxide layer for a first period to establish a resistance of the transition metal oxide layer and applying a second electric pulse to the transition metal oxide layer for a second period, longer than the first period, to increase the resistance of the transition metal oxide layer. Related devices are also disclosed.

摘要翻译： 一种对包括过渡金属氧化物层的非易失性存储器件进行编程的方法包括：将第一电脉冲施加到过渡金属氧化物层第一周期以建立过渡金属氧化物层的电阻并向第二电脉冲施加第二电脉冲 过渡金属氧化物层，延长第一周期，以增加过渡金属氧化物层的电阻。 还公开了相关设备。