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    RESISTIVE MEMORY CELLS AND DEVICES HAVING ASYMMETRICAL CONTACTS
    3.
    发明申请
    RESISTIVE MEMORY CELLS AND DEVICES HAVING ASYMMETRICAL CONTACTS 有权
    电阻记忆体和具有不对称接触的装置

    公开(公告)号：US20100044666A1

    公开(公告)日：2010-02-25

    申请号：US12612187

    申请日：2009-11-04

    申请人： In-Gyu Baek ,  Moon-Sook Lee ,  Dong-Chul Kim

    发明人： In-Gyu Baek ,  Moon-Sook Lee ,  Dong-Chul Kim

    IPC分类号： H01L47/00

    CPC分类号： H01L45/04 ,  G11C11/161 ,  G11C11/1659 ,  G11C13/0007 ,  G11C2213/52 ,  H01L27/2409 ,  H01L27/2436 ,  H01L27/2472 ,  H01L27/2481 ,  H01L45/1233 ,  H01L45/146 ,  H01L45/147

    摘要： A memory cell includes a plug-type first electrode in a substrate, a magneto-resistive memory element disposed on the first electrode, and a second electrode disposed on the magneto-resistive memory element opposite the first electrode. The second electrode has an area of overlap with the magneto-resistive memory element that is greater than an area of overlap of the first electrode and the magneto-resistive memory element. The first surface may, for example, be substantially circular and have a diameter less than a minimum planar dimension (e.g., width) of the second surface. The magneto-resistive memory element may include a colossal magneto-resistive material, such as an insulating material with a perovskite phase and/or a transition metal oxide.

    摘要翻译： 存储单元包括衬底中的插塞式第一电极，设置在第一电极上的磁阻存储元件，以及设置在与第一电极相对的磁阻存储元件上的第二电极。 第二电极具有与磁阻存储元件重叠的区域，其大于第一电极和磁阻存储元件的重叠区域。 例如，第一表面可以是基本上圆形的并且具有小于第二表面的最小平面尺寸（例如，宽度）的直径。 磁阻存储元件可以包括巨磁阻材料，例如具有钙钛矿相和/或过渡金属氧化物的绝缘材料。

    Resistive memory cells and devices having asymmetrical contacts
    4.
    发明授权
    Resistive memory cells and devices having asymmetrical contacts 有权
    具有不对称触点的电阻式存储单元和器件

    公开(公告)号：US07639521B2

    公开(公告)日：2009-12-29

    申请号：US11378945

    申请日：2006-03-17

    申请人： In-Gyu Baek ,  Moon-Sook Lee ,  Dong-Chul Kim

    发明人： In-Gyu Baek ,  Moon-Sook Lee ,  Dong-Chul Kim

    IPC分类号： G11C11/00

    CPC分类号： H01L45/04 ,  G11C11/161 ,  G11C11/1659 ,  G11C13/0007 ,  G11C2213/52 ,  H01L27/2409 ,  H01L27/2436 ,  H01L27/2472 ,  H01L27/2481 ,  H01L45/1233 ,  H01L45/146 ,  H01L45/147

    摘要： A memory cell includes a plug-type first electrode in a substrate, a magneto-resistive memory element disposed on the first electrode, and a second electrode disposed on the magneto-resistive memory element opposite the first electrode. The second electrode has an area of overlap with the magneto-resistive memory element that is greater than an area of overlap of the first electrode and the magneto-resistive memory element. The first surface may, for example, be substantially circular and have a diameter less than a minimum planar dimension (e.g., width) of the second surface. The magneto-resistive memory element may include a colossal magneto-resistive material, such as an insulating material with a perovskite phase and/or a transition metal oxide.

    摘要翻译： 存储单元包括衬底中的插塞式第一电极，设置在第一电极上的磁阻存储元件，以及设置在与第一电极相对的磁阻存储元件上的第二电极。 第二电极具有与磁阻存储元件重叠的区域，其大于第一电极和磁阻存储元件的重叠区域。 例如，第一表面可以是基本上圆形的并且具有小于第二表面的最小平面尺寸（例如，宽度）的直径。 磁阻存储元件可以包括巨磁阻材料，例如具有钙钛矿相和/或过渡金属氧化物的绝缘材料。

    Magneto-resistive memory cells and devices having asymmetrical contacts and methods of fabrication therefor
    5.
    发明申请
    Magneto-resistive memory cells and devices having asymmetrical contacts and methods of fabrication therefor 有权
    具有不对称接触的磁阻存储器单元和器件及其制造方法

    公开(公告)号：US20060215445A1

    公开(公告)日：2006-09-28

    申请号：US11378945

    申请日：2006-03-17

    申请人： In-Gyu Baek ,  Moon-Sook Lee ,  Dong-Chul Kim

    发明人： In-Gyu Baek ,  Moon-Sook Lee ,  Dong-Chul Kim

    IPC分类号： G11C11/00

    CPC分类号： H01L45/04 ,  G11C11/161 ,  G11C11/1659 ,  G11C13/0007 ,  G11C2213/52 ,  H01L27/2409 ,  H01L27/2436 ,  H01L27/2472 ,  H01L27/2481 ,  H01L45/1233 ,  H01L45/146 ,  H01L45/147

    摘要： A memory cell includes a plug-type first electrode in a substrate, a magneto-resistive memory element disposed on the first electrode, and a second electrode disposed on the magneto-resistive memory element opposite the first electrode. The second electrode has an area of overlap with the magneto-resistive memory element that is greater than an area of overlap of the first electrode and the magneto-resistive memory element. The first surface may, for example, be substantially circular and have a diameter less than a minimum planar dimension (e.g., width) of the second surface. The magneto-resistive memory element may include a colossal magneto-resistive material, such as an insulating material with a perovskite phase and/or a transition metal oxide.

    摘要翻译： 存储单元包括衬底中的插塞式第一电极，设置在第一电极上的磁阻存储元件，以及设置在与第一电极相对的磁阻存储元件上的第二电极。 第二电极具有与磁阻存储元件重叠的区域，其大于第一电极和磁阻存储元件的重叠区域。 例如，第一表面可以是基本上圆形的并且具有小于第二表面的最小平面尺寸（例如，宽度）的直径。 磁阻存储元件可以包括巨磁阻材料，例如具有钙钛矿相和/或过渡金属氧化物的绝缘材料。

    Resistive memory cells and devices having asymmetrical contacts
    6.
    发明授权
    Resistive memory cells and devices having asymmetrical contacts 有权
    具有不对称触点的电阻式存储单元和器件

    公开(公告)号：US08873274B2

    公开(公告)日：2014-10-28

    申请号：US13862918

    申请日：2013-04-15

    申请人： In-Gyu Baek ,  Moon-Sook Lee ,  Dong-Chul Kim

    发明人： In-Gyu Baek ,  Moon-Sook Lee ,  Dong-Chul Kim

    IPC分类号： G11C11/00

    CPC分类号： H01L45/04 ,  G11C11/161 ,  G11C11/1659 ,  G11C13/0007 ,  G11C2213/52 ,  H01L27/2409 ,  H01L27/2436 ,  H01L27/2472 ,  H01L27/2481 ,  H01L45/1233 ,  H01L45/146 ,  H01L45/147

    摘要： A memory cell includes a plug-type first electrode in a substrate, a magneto-resistive memory element disposed on the first electrode, and a second electrode disposed on the magneto-resistive memory element opposite the first electrode. The second electrode has an area of overlap with the magneto-resistive memory element that is greater than an area of overlap of the first electrode and the magneto-resistive memory element. The first surface may, for example, be substantially circular and have a diameter less than a minimum planar dimension (e.g., width) of the second surface. The magneto-resistive memory element may include a colossal magneto-resistive material, such as an insulating material with a perovskite phase and/or a transition metal oxide.

    摘要翻译： 存储单元包括衬底中的插塞式第一电极，设置在第一电极上的磁阻存储元件，以及设置在与第一电极相对的磁阻存储元件上的第二电极。 第二电极具有与磁阻存储元件重叠的区域，其大于第一电极和磁阻存储元件的重叠区域。 例如，第一表面可以是基本上圆形的并且具有小于第二表面的最小平面尺寸（例如，宽度）的直径。 磁阻存储元件可以包括巨磁阻材料，例如具有钙钛矿相和/或过渡金属氧化物的绝缘材料。

    Resistive Memory Cells and Devices Having Asymmetrical Contacts
    7.
    发明申请
    Resistive Memory Cells and Devices Having Asymmetrical Contacts 有权
    具有不对称触点的电阻式存储单元和器件

    公开(公告)号：US20130240826A1

    公开(公告)日：2013-09-19

    申请号：US13862918

    申请日：2013-04-15

    申请人： In-Gyu Baek ,  Moon-Sook Lee ,  Dong-Chul Kim

    发明人： In-Gyu Baek ,  Moon-Sook Lee ,  Dong-Chul Kim

    IPC分类号： H01L45/00

    CPC分类号： H01L45/04 ,  G11C11/161 ,  G11C11/1659 ,  G11C13/0007 ,  G11C2213/52 ,  H01L27/2409 ,  H01L27/2436 ,  H01L27/2472 ,  H01L27/2481 ,  H01L45/1233 ,  H01L45/146 ,  H01L45/147

    摘要： A memory cell includes a plug-type first electrode in a substrate, a magneto-resistive memory element disposed on the first electrode, and a second electrode disposed on the magneto-resistive memory element opposite the first electrode. The second electrode has an area of overlap with the magneto-resistive memory element that is greater than an area of overlap of the first electrode and the magneto-resistive memory element. The first surface may, for example, be substantially circular and have a diameter less than a minimum planar dimension (e.g., width) of the second surface. The magneto-resistive memory element may include a colossal magneto-resistive material, such as an insulating material with a perovskite phase and/or a transition metal oxide.

    摘要翻译： 存储单元包括衬底中的插塞式第一电极，设置在第一电极上的磁阻存储元件，以及设置在与第一电极相对的磁阻存储元件上的第二电极。 第二电极具有与磁阻存储元件重叠的区域，其大于第一电极和磁阻存储元件的重叠区域。 例如，第一表面可以是基本上圆形的并且具有小于第二表面的最小平面尺寸（例如，宽度）的直径。 磁阻存储元件可以包括巨磁阻材料，例如具有钙钛矿相和/或过渡金属氧化物的绝缘材料。

    RESISTIVE MEMORY CELLS AND DEVICES HAVING ASYMMETRICAL CONTACTS
    8.
    发明申请
    RESISTIVE MEMORY CELLS AND DEVICES HAVING ASYMMETRICAL CONTACTS 审中-公开
    电阻记忆体和具有不对称接触的装置

    公开(公告)号：US20110204314A1

    公开(公告)日：2011-08-25

    申请号：US13100702

    申请日：2011-05-04

    申请人： In-Gyu Baek ,  Moon-Sook Lee ,  Dong-Chul Kim

    发明人： In-Gyu Baek ,  Moon-Sook Lee ,  Dong-Chul Kim

    IPC分类号： H01L45/00

    CPC分类号： H01L45/04 ,  G11C11/161 ,  G11C11/1659 ,  G11C13/0007 ,  G11C2213/52 ,  H01L27/2409 ,  H01L27/2436 ,  H01L27/2472 ,  H01L27/2481 ,  H01L45/1233 ,  H01L45/146 ,  H01L45/147

    摘要： A memory cell includes a plug-type first electrode in a substrate, a magneto-resistive memory element disposed on the first electrode, and a second electrode disposed on the magneto-resistive memory element opposite the first electrode. The second electrode has an area of overlap with the magneto-resistive memory element that is greater than an area of overlap of the first electrode and the magneto-resistive memory element. The first surface may, for example, be substantially circular and have a diameter less than a minimum planar dimension (e.g., width) of the second surface. The magneto-resistive memory element may include a colossal magneto-resistive material, such as an insulating material with a perovskite phase and/or a transition metal oxide.

    摘要翻译： 存储单元包括衬底中的插塞式第一电极，设置在第一电极上的磁阻存储元件，以及设置在与第一电极相对的磁阻存储元件上的第二电极。 第二电极具有与磁阻存储元件重叠的区域，其大于第一电极和磁阻存储元件的重叠区域。 例如，第一表面可以是基本上圆形的并且具有小于第二表面的最小平面尺寸（例如，宽度）的直径。 磁阻存储元件可以包括巨磁阻材料，例如具有钙钛矿相和/或过渡金属氧化物的绝缘材料。

    Resistive memory cells and devices having asymmetrical contacts
    9.
    发明授权
    Resistive memory cells and devices having asymmetrical contacts 有权
    具有不对称触点的电阻式存储单元和器件

    公开(公告)号：US07961496B2

    公开(公告)日：2011-06-14

    申请号：US12612187

    申请日：2009-11-04

    申请人： In-Gyu Baek ,  Moon-Sook Lee ,  Dong-Chul Kim

    发明人： In-Gyu Baek ,  Moon-Sook Lee ,  Dong-Chul Kim

    IPC分类号： G11C11/00

    CPC分类号： H01L45/04 ,  G11C11/161 ,  G11C11/1659 ,  G11C13/0007 ,  G11C2213/52 ,  H01L27/2409 ,  H01L27/2436 ,  H01L27/2472 ,  H01L27/2481 ,  H01L45/1233 ,  H01L45/146 ,  H01L45/147

    摘要： A memory cell includes a plug-type first electrode in a substrate, a magneto-resistive memory element disposed on the first electrode, and a second electrode disposed on the magneto-resistive memory element opposite the first electrode. The second electrode has an area of overlap with the magneto-resistive memory element that is greater than an area of overlap of the first electrode and the magneto-resistive memory element. The first surface may, for example, be substantially circular and have a diameter less than a minimum planar dimension (e.g., width) of the second surface. The magneto-resistive memory element may include a colossal magneto-resistive material, such as an insulating material with a perovskite phase and/or a transition metal oxide.

    摘要翻译： 存储单元包括衬底中的插塞式第一电极，设置在第一电极上的磁阻存储元件，以及设置在与第一电极相对的磁阻存储元件上的第二电极。 第二电极具有与磁阻存储元件重叠的区域，其大于第一电极和磁阻存储元件的重叠区域。 例如，第一表面可以是基本上圆形的并且具有小于第二表面的最小平面尺寸（例如，宽度）的直径。 磁阻存储元件可以包括巨磁阻材料，例如具有钙钛矿相和/或过渡金属氧化物的绝缘材料。