公开(公告)号：US20130122664A1

公开(公告)日：2013-05-16

申请号：US13739866

申请日：2013-01-11

Applicant: Yun-Mo CHUNG ,  Ki-Yong LEE ,  Jin-Wook SEO ,  Min-Jae JEONG ,  Yong-Duck SON ,  Byung-Soo SO ,  Seung-Kyu PARK ,  Byoung-Keon PARK ,  Dong-Hyun LEE ,  Kil-Won LEE ,  Tak-Young LEE ,  Jong-Ryuk PARK ,  Jae-Wan JUNG

Inventor： Yun-Mo CHUNG ,  Ki-Yong LEE ,  Jin-Wook SEO ,  Min-Jae JEONG ,  Yong-Duck SON ,  Byung-Soo SO ,  Seung-Kyu PARK ,  Byoung-Keon PARK ,  Dong-Hyun LEE ,  Kil-Won LEE ,  Tak-Young LEE ,  Jong-Ryuk PARK ,  Jae-Wan JUNG

IPC: H01L29/66

CPC classification number: H01L29/66742 ,  H01L27/124 ,  H01L27/1248 ,  H01L27/3262 ,  H01L27/3274 ,  H01L29/66757 ,  H01L29/78618 ,  H01L51/0081

Abstract: A substrate including a thin film transistor, the substrate including an active layer disposed on the substrate, the active layer including a channel area and source and drain areas, a gate electrode disposed on the active layer, the channel area corresponding to the gate electrode, a gate insulating layer interposed between the active layer and the gate electrode, an interlayer insulating layer disposed to cover the active layer and the gate electrode, the interlayer insulating layer having first and second contact holes partially exposing the active layer, source and drain electrodes disposed on the interlayer insulating layer, the source and drain areas corresponding to the source and drain electrodes, and ohmic contact layers, the ohmic contact layers being interposed between the interlayer insulating layer and the source and drain electrodes, and contacting the source and drain areas through the first and second contact holes.

Abstract translation: 一种包括薄膜晶体管的基板，所述基板包括设置在所述基板上的有源层，所述有源层包括沟道区域和源极和漏极区域，设置在所述有源层上的栅极电极，对应于所述栅电极的沟道区域， 插入在有源层和栅电极之间的栅极绝缘层，设置成覆盖有源层和栅电极的层间绝缘层，具有部分地暴露有源层的第一和第二接触孔的层间绝缘层，设置的源极和漏极 在层间绝缘层上，对应于源极和漏极以及欧姆接触层的源极和漏极区域，欧姆接触层介于层间绝缘层和源极和漏极之间，并且使源极和漏极区域通过 第一和第二接触孔。

公开(公告)号：US20120268328A1

公开(公告)日：2012-10-25

申请号：US13440283

申请日：2012-04-05

Applicant: Jae-Hee KIM ,  Dong-Hyun LEE ,  Se-Hyun PARK ,  Austin KIM ,  Joon-Ho BYUN

Inventor： Jae-Hee KIM ,  Dong-Hyun LEE ,  Se-Hyun PARK ,  Austin KIM ,  Joon-Ho BYUN

IPC: H01Q1/24 ,  H01Q9/04

CPC classification number: H01Q5/0055 ,  H01Q1/243 ,  H01Q1/48 ,  H01Q5/364 ,  H01Q5/378 ,  H01Q7/00 ,  H01Q9/0421 ,  H01Q9/42 ,  H01Q13/10

Abstract: An antenna device for improving antenna performance of a portable terminal having a metal edge installed on a case frame is disclosed. The antenna device includes a main board equipped with a power supply end for supplying power and a ground surface for grounding the main board, a loop radiator connected with the power supply end of the main board at first end and connected with the ground surface of the main board at a second end, and a metal body disposed along an edge of the portable terminal and electrically connected with the ground surface of the main board.

Abstract translation: 公开了一种用于改善具有安装在壳体框架上的金属边缘的便携式终端的天线性能的天线装置。 天线装置包括配备有用于供电的电源端的主板和用于使主板接地的接地面，与第一端的主板的电源端连接并与主板的接地面连接的环形散热器 在第二端的主板，以及沿着便携式终端的边缘设置并与主板的地面电连接的金属体。

公开(公告)号：US20110114961A1

公开(公告)日：2011-05-19

申请号：US12714154

申请日：2010-02-26

Applicant: Dong-Hyun LEE ,  Ki-Yong Lee ,  Jin-Wook Seo ,  Tae-Hoon Yang ,  Maxim Lisachenko ,  Byoung-Keon Park ,  Kil-Won Lee ,  Jae-Wan Jung

Inventor： Dong-Hyun LEE ,  Ki-Yong Lee ,  Jin-Wook Seo ,  Tae-Hoon Yang ,  Maxim Lisachenko ,  Byoung-Keon Park ,  Kil-Won Lee ,  Jae-Wan Jung

IPC: H01L33/00 ,  H01L21/20 ,  H01L29/786 ,  H01L21/336

CPC classification number: H01L29/78675 ,  H01L21/02532 ,  H01L21/02672 ,  H01L27/1277 ,  H01L27/1281 ,  H01L27/1285 ,  H01L27/1296 ,  H01L29/66757 ,  H01L29/78696

Abstract: A method of forming a polycrystalline silicon layer, a thin film transistor (TFT), an organic light emitting diode (OLED) display device having the same, and methods of fabricating the same. The method of forming a polycrystalline silicon layer includes providing a substrate, forming a buffer layer on the substrate, forming an amorphous silicon layer on the buffer layer, forming a groove in the amorphous silicon layer, forming a capping layer on the amorphous silicon layer, forming a metal catalyst layer on the capping layer, and annealing the substrate and crystallizing the amorphous silicon layer into a polycrystalline silicon layer.

Abstract translation: 一种形成多晶硅层的方法，薄膜晶体管（TFT），具有该多晶硅层的有机发光二极管（OLED）显示器件及其制造方法。 形成多晶硅层的方法包括提供衬底，在衬底上形成缓冲层，在缓冲层上形成非晶硅层，在非晶硅层中形成沟槽，在非晶硅层上形成覆盖层， 在所述覆盖层上形成金属催化剂层，对所述基板退火并将所述非晶硅层析出为多晶硅层。

公开(公告)号：US20120262345A1

公开(公告)日：2012-10-18

申请号：US13440235

申请日：2012-04-05

Applicant: Jae-Hee KIM ,  Joon-Ho BYUN ,  Se-Hyun PARK ,  Dong-Hyun LEE ,  Austin KIM

Inventor： Jae-Hee KIM ,  Joon-Ho BYUN ,  Se-Hyun PARK ,  Dong-Hyun LEE ,  Austin KIM

IPC: H01Q1/24 ,  H01Q1/38

CPC classification number: H01Q1/243 ,  H01Q1/44 ,  H01Q1/48 ,  H01Q1/50 ,  H01Q21/28 ,  H01Q21/29

Abstract: An antenna apparatus for a portable terminal having a main board is provided. The antenna apparatus includes a main antenna that electrically connects to a feed line of the main board. A metal frame is constructed as part of a case frame forming an exterior of the portable terminal The metal frame is divided into first and second parts that are separated. The first part electrically connects to the main antenna or to the main board feed line, and is designed to radiate. The second part electrically connects to a ground surface of the main board. The metal frame enhances overall antenna performance rather than causing degradation through interference.

Abstract translation: 提供一种具有主板的便携式终端的天线装置。 天线装置包括与主板的馈电线电连接的主天线。 金属框架被构造为形成便携式终端的外部的壳体框架的一部分。金属框架被分割成分离的第一和第二部分。 第一部分电连接到主天线或主板馈电线，并被设计为辐射。 第二部分电连接到主板的地表面。 金属框架增强了整体天线性能，而不是通过干扰导致劣化。

公开(公告)号：US20110263107A1

公开(公告)日：2011-10-27

申请号：US13177936

申请日：2011-07-07

Applicant: Yun-Mo CHUNG ,  Ki-Yong LEE ,  Min-Jae JEONG ,  Jin-Wook SEO ,  Jong-Won HONG ,  Heung-Yeol NA ,  Eu-Gene KANG ,  Seok-Rak CHANG ,  Tae-Hoon YANG ,  Ji-Su AHN ,  Young-Dae KIM ,  Byoung-Keon PARK ,  Kil-Won LEE ,  Dong-Hyun LEE ,  Sang-Yon YOON ,  Jong-Ryuk PARK ,  Bo-Kyung CHOI ,  Maxim LISACHENKO

Inventor： Yun-Mo CHUNG ,  Ki-Yong LEE ,  Min-Jae JEONG ,  Jin-Wook SEO ,  Jong-Won HONG ,  Heung-Yeol NA ,  Eu-Gene KANG ,  Seok-Rak CHANG ,  Tae-Hoon YANG ,  Ji-Su AHN ,  Young-Dae KIM ,  Byoung-Keon PARK ,  Kil-Won LEE ,  Dong-Hyun LEE ,  Sang-Yon YOON ,  Jong-Ryuk PARK ,  Bo-Kyung CHOI ,  Maxim LISACHENKO

IPC: H01L21/20 ,  C23C16/48 ,  C23C16/455 ,  C23C16/24 ,  C23C16/04

CPC classification number: H01L21/02532 ,  C23C14/04 ,  H01L21/02422 ,  H01L21/02488 ,  H01L21/02672

Abstract: A method of forming a polycrystalline silicon layer and an atomic layer deposition apparatus used for the same. The method includes forming an amorphous silicon layer on a substrate, exposing the substrate having the amorphous silicon layer to a hydrophilic or hydrophobic gas atmosphere, placing a mask having at least one open and at least one closed portion over the amorphous silicon layer, irradiating UV light toward the amorphous silicon layer and the mask using a UV lamp, depositing a crystallization-inducing metal on the amorphous silicon layer, and annealing the substrate to crystallize the amorphous silicon layer into a polycrystalline silicon layer. This method and apparatus provide for controlling the seed position and grain size in the formation of a polycrystalline silicon layer.

Abstract translation: 一种形成多晶硅层的方法和用于其的原子层沉积装置。 该方法包括在衬底上形成非晶硅层，将具有非晶硅层的衬底暴露于亲水或疏水性气体气氛，在非晶硅层上放置具有至少一个开放和至少一个封闭部分的掩模，照射UV 使用UV灯朝向非晶硅层和掩模发光，在非晶硅层上沉积结晶诱导金属，并退火基板以使非晶硅层结晶成多晶硅层。 该方法和装置提供了在多晶硅层的形成中控制种子位置和晶粒尺寸。

公开(公告)号：US20110248277A1

公开(公告)日：2011-10-13

申请号：US12975809

申请日：2010-12-22

Applicant: Dong-Hyun LEE ,  Ki-Yong LEE ,  Jin-Wook Seo ,  Min-Jae Jeong ,  Yong-Duck Son ,  Byung-Soo So ,  Seung-Kyu Park ,  Kil-Won Lee ,  Yun-Mo Chung ,  Byoung-Keon Park ,  Jong-Ryuk Park ,  Tak-Young Lee ,  Jae-Wan Jung

Inventor： Dong-Hyun LEE ,  Ki-Yong LEE ,  Jin-Wook Seo ,  Min-Jae Jeong ,  Yong-Duck Son ,  Byung-Soo So ,  Seung-Kyu Park ,  Kil-Won Lee ,  Yun-Mo Chung ,  Byoung-Keon Park ,  Jong-Ryuk Park ,  Tak-Young Lee ,  Jae-Wan Jung

IPC: H01L27/12 ,  H01L21/20 ,  H01L21/84

CPC classification number: H01L21/02532 ,  H01L21/02488 ,  H01L21/02672 ,  H01L27/1277 ,  H01L29/66757 ,  H01L29/66765

Abstract: A method of crystallizing an amorphous silicon layer, a method of manufacturing a thin film transistor using the same, and a thin film transistor using the manufacturing method, the crystallizing method including: forming an amorphous silicon layer; positioning crystallization catalyst particles on the amorphous silicon layer to be separated from each other; selectively removing the crystallization catalyst particles from a portion of the amorphous silicon layer; and crystallizing the amorphous silicon layer by a heat treatment.

Abstract translation: 一种使非晶硅层结晶的方法，使用其的薄膜晶体管的制造方法和使用该制造方法的薄膜晶体管，所述结晶方法包括：形成非晶硅层; 将结晶催化剂颗粒定位在待分离的非晶硅层上; 从非晶硅层的一部分选择性地除去结晶催化剂颗粒; 并通过热处理使非晶硅层结晶。

公开(公告)号：US20100163855A1

公开(公告)日：2010-07-01

申请号：US12649980

申请日：2009-12-30

Applicant: Dong-Hyun LEE ,  Ki-Yong Lee ,  Jin-Wook Seo ,  Tae-Hoon Yang ,  Maxim Lisachenko ,  Byoung-Keon Park ,  Kil-Won Lee ,  Jae-Wan Jung

Inventor： Dong-Hyun LEE ,  Ki-Yong Lee ,  Jin-Wook Seo ,  Tae-Hoon Yang ,  Maxim Lisachenko ,  Byoung-Keon Park ,  Kil-Won Lee ,  Jae-Wan Jung

IPC: H01L51/50 ,  H01L29/786 ,  H01L21/336 ,  H01L33/00

CPC classification number: H01L29/66765 ,  H01L21/02488 ,  H01L21/02532 ,  H01L21/02672 ,  H01L29/66757 ,  H01L29/78696

Abstract: A thin film transistor, a method of fabricating the thin film transistor, and an organic light emitting diode (OLED) display device equipped with the thin film transistor of which the thin film transistor includes a substrate, a buffer layer disposed on the substrate, a first semiconductor layer and a second semiconductor layer disposed on the buffer layer, a gate electrode insulated from the first semiconductor layer and the second semiconductor layer, a gate insulating layer insulating the gate electrode from the first semiconductor layer and the second semiconductor layer, and source and drain electrodes insulated from the gate electrode and partially connected to the second semiconductor layer, wherein the second semiconductor layer is disposed on the first semiconductor layer.

Abstract translation: 薄膜晶体管，薄膜晶体管的制造方法以及配备有薄膜晶体管的有机发光二极管（OLED）显示装置，其中薄膜晶体管包括基板，设置在基板上的缓冲层， 第一半导体层和设置在缓冲层上的第二半导体层，与第一半导体层和第二半导体层绝缘的栅电极，将栅电极与第一半导体层和第二半导体层绝缘的栅极绝缘层，以及源极 以及与栅电极绝缘并部分地连接到第二半导体层的漏电极，其中第二半导体层设置在第一半导体层上。

公开(公告)号：US20090270093A1

公开(公告)日：2009-10-29

申请号：US12252002

申请日：2008-10-15

Applicant: Dong-Hyun LEE

Inventor： Dong-Hyun LEE

IPC: H04W24/08 ,  H04M1/00

CPC classification number: H04M1/7253 ,  H04L67/16 ,  H04M1/72544 ,  H04M1/72572 ,  H04W8/005

Abstract: A mobile terminal including a wireless communication unit configured to wirelessly communicate with wireless devices to be connected with the mobile terminal, a display unit configured to display information about the wireless devices, an input unit configured to input search information including at least one of a distance range to search for the wireless devices and a type of the wireless devices, and a controller configured to control the wireless communication unit to search for the wireless devices based on the input search information and to control the display unit to display responding wireless devices that responded to the search by the wireless communication unit according to the input search information.

Abstract translation: 一种移动终端，包括被配置为与要与移动终端连接的无线设备进行无线通信的无线通信单元，被配置为显示关于无线设备的信息的显示单元，被配置为输入搜索信息的输入单元，所述输入单元包括以下中的至少一个： 范围，以搜索无线设备和一种无线设备;以及控制器，被配置为基于输入的搜索信息来控制无线通信单元搜索无线设备，并且控制显示单元显示响应的响应的无线设备 根据输入的搜索信息由无线通信单元进行搜索。

公开(公告)号：US20120088340A1

公开(公告)日：2012-04-12

申请号：US13333587

申请日：2011-12-21

Applicant: Byoung-Keon PARK ,  Jin-Wook SEO ,  Tae-Hoon YANG ,  Kil-Won LEE ,  Dong-Hyun LEE

Inventor： Byoung-Keon PARK ,  Jin-Wook SEO ,  Tae-Hoon YANG ,  Kil-Won LEE ,  Dong-Hyun LEE

IPC: H01L21/336

CPC classification number: H01L29/78615 ,  H01L27/1277 ,  H01L29/66757

Abstract: A thin film transistor, a method of fabricating the same, and an organic light emitting diode display device including the same. The thin film transistor includes: a substrate; a semiconductor layer disposed on the substrate, including a channel region, source/drain regions, and a body contact region; a gate insulating layer disposed on the semiconductor layer so as to expose the body contact region; a gate electrode disposed on the gate insulating layer, so as to contact the body contact region; an interlayer insulating layer disposed on the gate electrode; and source/drain electrodes disposed on the interlayer insulating layer and electrically connected to the source/drain regions. The body contact region is formed in an edge of the semiconductor layer.

Abstract translation: 薄膜晶体管，其制造方法和包括该薄膜晶体管的有机发光二极管显示装置。 薄膜晶体管包括：基板; 设置在所述基板上的半导体层，包括沟道区，源极/漏极区和主体接触区; 栅极绝缘层，设置在所述半导体层上以暴露所述本体接触区域; 栅电极，设置在所述栅极绝缘层上，以与所述主体接触区域接触; 设置在所述栅电极上的层间绝缘层; 以及设置在层间绝缘层上并与源极/漏极区电连接的源极/漏极。 体接触区域形成在半导体层的边缘中。

公开(公告)号：US20120009924A1

公开(公告)日：2012-01-12

申请号：US13241062

申请日：2011-09-22

Applicant: Dong-Hyun LEE

Inventor： Dong-Hyun LEE

IPC: H04W88/02 ,  H04W4/00

CPC classification number: H04M1/7253 ,  H04L67/16 ,  H04M1/72544 ,  H04M1/72572 ,  H04W8/005

Abstract: A mobile terminal including a wireless communication unit configured to wirelessly communicate with wireless devices to be connected with the mobile terminal, a display unit configured to display information about the wireless devices, an input unit configured to input search information including at least one of a distance range to search for the wireless devices and a type of the wireless devices, and a controller configured to control the wireless communication unit to search for the wireless devices based on the input search information and to control the display unit to display responding wireless devices that responded to the search by the wireless communication unit according to the input search information.

Abstract translation: 一种移动终端，包括被配置为与要与移动终端连接的无线设备进行无线通信的无线通信单元，被配置为显示关于无线设备的信息的显示单元，被配置为输入搜索信息的输入单元，所述输入单元包括以下中的至少一个： 范围，以搜索无线设备和一种无线设备;以及控制器，被配置为基于输入的搜索信息来控制无线通信单元搜索无线设备，并且控制显示单元显示响应的响应的无线设备 根据输入的搜索信息由无线通信单元进行搜索。