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    Isolation in micromachined single crystal silicon using deep trench insulation
    1.
    发明授权
    Isolation in micromachined single crystal silicon using deep trench insulation 有权
    使用深沟槽绝缘的微加工单晶硅中的隔离

    公开(公告)号：US06472290B2

    公开(公告)日：2002-10-29

    申请号：US09756981

    申请日：2001-01-09

    申请人： Dong-il Cho ,  Sangwoo Lee ,  Sangjun Park ,  Sangchul Lee

    发明人： Dong-il Cho ,  Sangwoo Lee ,  Sangjun Park ,  Sangchul Lee

    IPC分类号： H01L2176

    CPC分类号： B81B3/0086 ,  B81B2203/0136 ,  B81B2203/0307 ,  B81B2203/04

    摘要： An electrical isolation method for silicon microelectromechanical systems provides trenches filled with insulation layers that support released silicon structures. The insulation layer that fills the trenches passes through the middle portion of the electrodes, anchors the electrodes to the silicon substrate and supports the electrode. The insulation layers do not attach the electrode to the sidewalls of the substrate, thereby forming an electrode having an “island” shape. Such an electrode is spaced far apart from the adjacent walls of the silicon substrate providing a small parasitic capacitance for the resulting structure. The isolation method is consistent with fabricating a complex structure or a structure with a complicated electrode arrangement. Furthermore, the structure and the electrode are separated from the silicon substrate in a single release step. Additionally, a metal layer is deposited on the surfaces of the structure and electrodes without using separate photolithography and etching steps.

    摘要翻译： 用于硅微机电系统的电隔离方法提供填充有支撑释放的硅结构的绝缘层的沟槽。 填充沟槽的绝缘层通过电极的中间部分，将电极固定到硅衬底并支撑电极。 绝缘层不将电极附着到基板的侧壁，从而形成具有“岛”形状的电极。 这样的电极与硅衬底的相邻壁间隔得很远，为所得到的结构提供了小的寄生电容。 隔离方法与制造具有复杂电极布置的复杂结构或结构一致。 此外，在单个释放步骤中，结构和电极与硅衬底分离。 此外，金属层沉积在结构和电极的表面上，而不使用单独的光刻和蚀刻步骤。

    Indium tin oxide target, method of manufacturing the same and transparent electrode manufactured by using the same
    6.
    发明申请
    Indium tin oxide target, method of manufacturing the same and transparent electrode manufactured by using the same 审中-公开
    铟锡氧化物靶，其制造方法和通过使用它们制造的透明电极

    公开(公告)号：US20080173962A1

    公开(公告)日：2008-07-24

    申请号：US11725310

    申请日：2007-03-19

    申请人： Joon-Hee Jeong ,  Jun Ho Choi ,  Sangchul Lee ,  Shinhyuk Kang

    发明人： Joon-Hee Jeong ,  Jun Ho Choi ,  Sangchul Lee ,  Shinhyuk Kang

    IPC分类号： H01L31/0224 ,  C01G19/00

    CPC分类号： H01J9/02 ,  C23C14/086 ,  C23C14/3414 ,  H01J29/085 ,  H01J2211/225 ,  H01L51/5206

    摘要： An indium tin oxide (ITO) target including calcium of about 0.001% to about 10% by atom, compared with an indium atom, and an ITO transparent electrode for a display apparatus manufactured from an ITO target are provided. A method of manufacturing the ITO target, the method including: preparing a slurry by mixing an indium oxide powder, a tin oxide powder, and a calcium-containing compound powder; granulating the slurry by milling and drying the slurry to prepare a granulated powder; shaping the granulated powder to form a shaped body; and sintering the shaped body. The ITO target including calcium manufactured by the method can reduce a number of times nodules and arcs are generated during sputtering, thereby growing a film which is able to be used for a long period of time.

    摘要翻译： 提供了与铟原子相比含有约0.001％至约10原子％的钙的铟锡氧化物（ITO）靶，以及由ITO靶制造的用于显示装置的ITO透明电极。 一种制造ITO靶的方法，该方法包括：通过混合氧化铟粉末，氧化锡粉末和含钙化合物粉末来制备浆料; 通过研磨和干燥浆料来制备浆料以制备造粒粉末; 造粒粉末形成成形体; 并烧结成形体。 包括通过该方法制造的钙的ITO靶可以减少在溅射期间产生结节和弧的次数，从而生长能够长时间使用的膜。