公开(公告)号：US07382035B2

公开(公告)日：2008-06-03

申请号：US11356125

申请日：2006-02-17

申请人： Dong-sik Shim ,  Young-hoon Min ,  Il-jong Song ,  Ja-nam Ku ,  Hyung Choi

发明人： Dong-sik Shim ,  Young-hoon Min ,  Il-jong Song ,  Ja-nam Ku ,  Hyung Choi

IPC分类号： H01L29/47

CPC分类号： H01L29/872

摘要： A low leakage Schottky diode and fabrication method thereof. The Schottky diode includes a n-type semiconductor; an anode having a circular periphery formed in a region above the n-type semiconductor; and a cathode formed in a region above the n-type semiconductor and having a pattern surrounding and set apart from the outer periphery of the anode. Because there are no edges at the anode and cathode interface, leakage current is minimized.

摘要翻译： 一种低泄漏肖特基二极管及其制造方法。 肖特基二极管包括n型半导体; 具有形成在n型半导体上方的区域的圆形周边的阳极; 以及阴极，形成在n型半导体上方的区域中，并且具有围绕并与阳极的外周隔开的图案。 因为在阳极和阴极界面处没有边缘，所以泄漏电流被最小化。

公开(公告)号：US20060186421A1

公开(公告)日：2006-08-24

申请号：US11356125

申请日：2006-02-17

申请人： Dong-sik Shim ,  Young-hoon Min ,  Il-jong Song ,  Ja-nam Ku ,  Hyung Choi

发明人： Dong-sik Shim ,  Young-hoon Min ,  Il-jong Song ,  Ja-nam Ku ,  Hyung Choi

IPC分类号： H01L33/00

CPC分类号： H01L29/872

摘要： A low leakage Schottky diode and fabrication method thereof. The Schottky diode includes a n-type semiconductor; an anode having a circular periphery formed in a region above the n-type semiconductor; and a cathode formed in a region above the n-type semiconductor and having a pattern surrounding and set apart from the outer periphery of the anode. Because there are no edges at the anode and cathode interface, leakage current is minimized.

摘要翻译： 一种低泄漏肖特基二极管及其制造方法。 肖特基二极管包括n型半导体; 具有形成在n型半导体上方的区域的圆形周边的阳极; 以及阴极，形成在n型半导体上方的区域中，并且具有围绕并与阳极的外周隔开的图案。 因为在阳极和阴极界面处没有边缘，所以泄漏电流被最小化。

公开(公告)号：US20060181824A1

公开(公告)日：2006-08-17

申请号：US11337572

申请日：2006-01-24

申请人： Dong-sik Shim ,  Ja-nam Ku ,  Young-hoon Min ,  Il-jong Song ,  Hyung Choi

发明人： Dong-sik Shim ,  Ja-nam Ku ,  Young-hoon Min ,  Il-jong Song ,  Hyung Choi

IPC分类号： H02H9/00

CPC分类号： H01L27/0814 ,  H01L27/095 ,  H01L29/872

摘要： A semiconductor device using schottky diodes for removing noise, a fabrication method, and an electrostatic discharge prevention device are provided. The semiconductor device includes a P-well substrate; insulation layers deposited on etched regions of the substrate; an N-well layer deposited on an etched region of the P-well substrate between the insulation layers; P+ type implants injected to a first region and a second region of the N-well layer; and first and second metals formed in schottky contact on the first and second regions, respectively. The method includes etching away regions of a P-well substrate and depositing an insulation substance; etching away the P-well substrate and depositing the insulation substance between the insulation layers to create an N-well layer; injecting P+ type implants to a first region and a second region of the N-well layer; and forming first and second metals in schottky contact on the first and second regions, respectively.

摘要翻译： 提供了一种使用用于去除噪声的肖特基二极管的半导体器件，制造方法和静电放电防止装置。 半导体器件包括P阱衬底; 沉积在衬底的蚀刻区域上的绝缘层; 在所述绝缘层之间沉积在所述P阱衬底的蚀刻区域上的N阱层; 注射到N阱层的第一区域和第二区域的P + 以及分别在第一和第二区域上以肖特基接触形成的第一和第二金属。 该方法包括蚀刻掉P阱衬底的区域并沉积绝缘物质; 蚀刻P阱衬底并将绝缘物质沉积在绝缘层之间以产生N阱层; 将P + SUP +型植入物注入N阱层的第一区域和第二区域; 以及分别在所述第一和第二区域上形成肖特基接触的第一和第二金属。

公开(公告)号：US20070139198A1

公开(公告)日：2007-06-21

申请号：US11487564

申请日：2006-07-17

申请人： Dong-sik Shim ,  Ja-nam Ku ,  Young-hoon Min ,  Il-jong Song

发明人： Dong-sik Shim ,  Ja-nam Ku ,  Young-hoon Min ,  Il-jong Song

IPC分类号： G08B13/14 ,  H04Q5/22 ,  G08B23/00

CPC分类号： G06K19/0723 ,  G06K19/0701

摘要： Provided are an RFID tag capable of limiting an over-voltage and a method for controlling an over-voltage thereof. The RFID tag includes: an antenna unit receiving external electromagnetic waves to induce an input voltage; a voltage generator rectifying the input voltage to generate a driving voltage; a voltage limiter adaptively turned on and/or off depending on whether the input voltage is high or low to limit an intensity of the input voltage input into the voltage generator; and a logic controller controlling the antenna unit to generate authentication information based on the driving voltage and transmit the authentication information.

摘要翻译： 提供能够限制过电压的RFID标签和用于控制其过电压的方法。 RFID标签包括：天线单元，接收外部电磁波以感应输入电压; 整流输入电压的电压发生器产生驱动电压; 电压限制器根据输入电压是高还是低自适应地导通和/或截止以限制输入到电压发生器的输入电压的强度; 以及逻辑控制器，其控制所述天线单元，以基于所述驱动电压生成认证信息，并发送所述认证信息。

公开(公告)号：US20060198197A1

公开(公告)日：2006-09-07

申请号：US11360615

申请日：2006-02-24

申请人： Ja-nam Ku ,  Chung-woul Kim ,  Young-hoon Min ,  Il-jong Song ,  Dong-hyun Lee

发明人： Ja-nam Ku ,  Chung-woul Kim ,  Young-hoon Min ,  Il-jong Song ,  Dong-hyun Lee

IPC分类号： G11C11/34 ,  G11C16/06

CPC分类号： H03K19/00315 ,  H03K17/08128

摘要： An over-voltage protection circuit (i.e., a limiter), includes: a first switching block having a plurality of semiconductor elements, serially connected to each other and turned on in sequence according to the magnitude of an input voltage; and a plurality of second switching blocks, in which each of the second switching blocks includes a pair of serially connected semiconductor elements having different current properties. The second switching blocks are connected in parallel to the first switching block. By minimizing a leakage current when an input voltage is below a reference voltage and by maximizing a leakage current when the input voltage is above the reference voltage, the limiter prevents excessive current from flowing into the RF tag circuit when the input voltage is below the reference voltage, and ensures that a sufficient amount of current is supplied to a regulator when the input voltage is below the reference voltage.

摘要翻译： 过电压保护电路（即限幅器）包括：具有多个半导体元件的第一开关块，它们彼此串联连接并根据输入电压的大小依次导通; 以及多个第二切换块，其中每个第二切换块包括具有不同电流特性的一对串联连接的半导体元件。 第二切换块与第一切换块并联连接。 当输入电压低于参考电压时，通过使漏电流最小化，并且当输入电压高于参考电压时使漏电流最大化，当输入电压低于参考电压时，限幅器可防止过大的电流流入RF标签电路 电压，并且确保当输入电压低于参考电压时，足够量的电流被提供给调节器。

公开(公告)号：US20050269658A1

公开(公告)日：2005-12-08

申请号：US11147164

申请日：2005-06-08

申请人： Ja-nam Ku ,  Seong-hearn Lee ,  Il-jong Song ,  Young-hoon Min ,  Sang-wook Kwon

发明人： Ja-nam Ku ,  Seong-hearn Lee ,  Il-jong Song ,  Young-hoon Min ,  Sang-wook Kwon

IPC分类号： H01L29/872 ,  G06K19/07 ,  G06K19/077 ,  H01L21/28 ,  H01L21/822 ,  H01L27/04 ,  H01L27/07 ,  H01L29/47 ,  H01L29/732

CPC分类号： H01L29/872 ,  H01L27/0788

摘要： An integrated circuit structure in which a plurality of Schottky diodes and a capacitor are integrally formed. The integrated circuit structure includes a substrate including an N-type semiconductor doped with N-type impurities and a P-type semiconductor doped with P-type impurities; a first conductive layer laminated on the substrate so that the first conductive layer is electrically connected to the N-type semiconductor and the P-type semiconductor; a dielectric layer laminated on an upper surface of the first conductive layer; and a second conductive layer laminated on an upper surface of the dielectric layer so that the second conductive layer forms a capacitor together with the first conductive layer and the dielectric layer. Accordingly, when the integrated circuit structure is used in a rectification circuit, the size of an entire circuit can be reduced.

摘要翻译： 一体形成多个肖特基二极管和电容器的集成电路结构。 集成电路结构包括：衬底，其包括掺杂有N型杂质的N型半导体和掺杂有P型杂质的P型半导体; 层叠在所述基板上的第一导电层，使得所述第一导电层与所述N型半导体和所述P型半导体电连接; 层压在所述第一导电层的上表面上的电介质层; 以及层叠在电介质层的上表面上的第二导电层，使得第二导电层与第一导电层和电介质层一起形成电容器。 因此，当在整流电路中使用集成电路结构时，可以减小整个电路的尺寸。

公开(公告)号：US07688561B2

公开(公告)日：2010-03-30

申请号：US11360615

申请日：2006-02-24

申请人： Ja-nam Ku ,  Chung-woul Kim ,  Young-hoon Min ,  Il-jong Song ,  Dong-hyun Lee

发明人： Ja-nam Ku ,  Chung-woul Kim ,  Young-hoon Min ,  Il-jong Song ,  Dong-hyun Lee

IPC分类号： H02H3/20 ,  H02H9/04

CPC分类号： H03K19/00315 ,  H03K17/08128

摘要： An over-voltage protection circuit (i.e., a limiter), includes: a first switching block having a plurality of semiconductor elements, serially connected to each other and turned on in sequence according to the magnitude of an input voltage; and a plurality of second switching blocks, in which each of the second switching blocks includes a pair of serially connected semiconductor elements having different current properties. The second switching blocks are connected in parallel to the first switching block. By minimizing a leakage current when an input voltage is below a reference voltage and by maximizing a leakage current when the input voltage is above the reference voltage, the limiter prevents excessive current from flowing into the RF tag circuit when the input voltage is below the reference voltage, and ensures that a sufficient amount of current is supplied to a regulator when the input voltage is below the reference voltage.

摘要翻译： 过压保护电路（即限幅器）包括：具有多个半导体元件的第一开关块，它们相互串联并根据输入电压的大小依次导通; 以及多个第二切换块，其中每个第二切换块包括具有不同电流特性的一对串联连接的半导体元件。 第二切换块与第一切换块并联连接。 当输入电压低于参考电压时，通过使漏电流最小化，并且当输入电压高于参考电压时使泄漏电流达到最大值，当输入电压低于参考电压时，限幅器可防止过大的电流流入RF标签电路 电压，并且确保当输入电压低于参考电压时，足够量的电流被提供给调节器。

公开(公告)号：US07625804B2

公开(公告)日：2009-12-01

申请号：US11963354

申请日：2007-12-21

申请人： Ja-nam Ku ,  Seong-hearn Lee ,  Il-jong Song ,  Young-hoon Min ,  Sang-wook Kwon

发明人： Ja-nam Ku ,  Seong-hearn Lee ,  Il-jong Song ,  Young-hoon Min ,  Sang-wook Kwon

IPC分类号： H01L21/20

CPC分类号： H01L29/872 ,  H01L27/0788

摘要： An integrated circuit structure in which a plurality of Schottky diodes and a capacitor are integrally formed. The integrated circuit structure includes a substrate including an N-type semiconductor doped with N-type impurities and a P-type semiconductor doped with P-type impurities; a first conductive layer laminated on the substrate so that the first conductive layer is electrically connected to the N-type semiconductor and the P-type semiconductor; a dielectric layer laminated on an upper surface of the first conductive layer; and a second conductive layer laminated on an upper surface of the dielectric layer so that the second conductive layer forms a capacitor together with the first conductive layer and the dielectric layer. Accordingly, when the integrated circuit structure is used in a rectification circuit, the size of an entire circuit can be reduced.

摘要翻译： 一体形成多个肖特基二极管和电容器的集成电路结构。 集成电路结构包括：衬底，其包括掺杂有N型杂质的N型半导体和掺杂有P型杂质的P型半导体; 层叠在所述基板上的第一导电层，使得所述第一导电层与所述N型半导体和所述P型半导体电连接; 层压在所述第一导电层的上表面上的电介质层; 以及层叠在电介质层的上表面上的第二导电层，使得第二导电层与第一导电层和电介质层一起形成电容器。 因此，当在整流电路中使用集成电路结构时，可以减小整个电路的尺寸。

公开(公告)号：US07339485B2

公开(公告)日：2008-03-04

申请号：US11356023

申请日：2006-02-17

申请人： Ja-nam Ku ,  Young-hoon Min ,  Il-jong Song ,  Dong-hyun Lee

发明人： Ja-nam Ku ,  Young-hoon Min ,  Il-jong Song ,  Dong-hyun Lee

IPC分类号： G08B21/00 ,  H04Q13/14 ,  H04Q7/00

CPC分类号： G06K19/0723 ,  G06K19/0713

摘要： Disclosed is a rectifier for supplying double voltage and an RFID tag thereof. The rectifier includes a charging part for charging an input voltage induced to input ends by a received radio frequency (RF) signal; a power provider for charging a sum voltage corresponding to the sum of the input voltage induced to the input end and the voltage charged in the charging part as a power voltage, and discharging the charged power voltage to provide a direct current (DC) power; and a switching part for switching to supply the input voltage induced at the input ends to the charging part during a first interval and switching to supply the sum voltage to the power provider during a second interval. Accordingly, double voltage can be supplied to other electric elements formed in the RFID tag and overcurrent caused by overvoltage can be prevented from flowing into the elements.

摘要翻译： 公开了一种用于提供双电压的整流器及其RFID标签。 整流器包括用于通过接收的射频（RF）信号对感应到输入端的输入电压进行充电的充电部分; 电源提供器，用于对与所述输入端感应的输入电压和所述充电部中充电的电压的和相对应的和电压作为电源电压进行充电，并且对所述充电电力电压进行放电以提供直流（DC）电力; 以及切换部，用于切换以在第一间隔期间将在输入端感应的输入电压提供给充电部分，并且在第二间隔期间切换以将和电压提供给电力供应商。 因此，可以向形成在RFID标签中的其他电气元件提供双电压，并且可以防止由过电压引起的过电流流入元件。

公开(公告)号：US20050276307A1

公开(公告)日：2005-12-15

申请号：US11148304

申请日：2005-06-09

申请人： Il-jong Song ,  Ja-nam Ku ,  Young-hoon Min ,  Sang-wook Kwon

发明人： Il-jong Song ,  Ja-nam Ku ,  Young-hoon Min ,  Sang-wook Kwon

IPC分类号： G01K1/02 ,  G01J5/00 ,  G01K7/01 ,  G01K13/00 ,  G06K17/00 ,  G06K19/00 ,  G06K19/07

CPC分类号： G01K13/00 ,  G01K1/024 ,  G01K7/01

摘要： Disclosed are a temperature measurement apparatus and method for measuring temperature by using RF signals having different frequencies. The temperature measurement apparatus includes a parameter generation unit for generating a first parameter based on a radio frequency (RF) signal having a first frequency and a second parameter based on an RF signal having a second frequency; a parameter detection unit for detecting the generated first and second parameters; and a control unit for calculating a temperature value based on the detected first and second parameters. Accordingly, the temperature measurement apparatus can measure temperature by use of existing components and received RF signals without any addition of a temperature sensor, as well as measure temperature precisely without having any influence on the intensities of RF signals that can vary due to the changes of transmission distances and signal-receiving environments.

摘要翻译： 公开了通过使用具有不同频率的RF信号来测量温度的温度测量装置和方法。 温度测量装置包括参数产生单元，用于基于具有第二频率的RF信号的具有第一频率和第二参数的射频（RF）信号产生第一参数; 参数检测单元，用于检测所生成的第一和第二参数; 以及控制单元，用于基于检测到的第一和第二参数来计算温度值。 因此，温度测量装置可以通过使用现有部件和接收的RF信号而不加温度传感器来测量温度，并且可以精确地测量温度，而不会对RF信号的强度产生任何影响，RF信号的强度可能由于 传输距离和信号接收环境。